Infineon IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 Manual
Contents
1. IPI80N08S2 07 10 Typ gate threshold voltage V esn f Tj Ves Vos parameter p 4 3 5 1250 pA 250 uA 2 5 V es tn V 1 5 60 20 20 60 100 140 180 Ti C 12 Typical forward diode characteristicis IF f Vsp parameter T 10 10 T 4 175 C 25 C 10 10 0 0 2 04 06 0 8 1 12 1 4 Vsp V 2006 03 03 Cinfineon 13 Typical avalanche energy Ens f T parameter Ip 80A 900 800 700 600 500 E As mJ 400 300 T C 125 15 Typ drain source breakdown voltage Verpss f T p 1 mA 90 85 80 Vsn pss V 75 70 Rev 1 0 IPB80N08S2 07 IPP80N08S2 07 IPI80N08S2 07 14 Typ gate charge Vos f Q gate p 80 A pulsed parameter V pp Ves V 12 0 20 40 60 80 100 120 140 160 Q gate nC 16 Gate charge waveforms page 7 2006 03 03 Infineon IPB80N08S2 07 Gin IPP80N08S2 07 IPI80N08S2 07 Published by Infineon Technologies AG St Martin StraRe 53 D 81541 M nchen Infineon Technologies AG 2004 All Rights Reserved Attention please The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of non infringement regarding circuits descriptions and charts stated herein Inform2. 0N08S2 07 Infineon IPP80N08S2 07 IPIS80N08S2 07 1 Power dissipation 2 Drain current Pio f T c Ves2 6 V Ip f Tc Vesz 10V 350 100 300 80 250 60 200 lt E amp 450 40 100 20 50 0 0 0 50 100 150 200 0 50 100 150 200 Tc C Tc C 3 Safe operating area 4 Max transient thermal impedance Ip f Vps To 25 C D 0 Z thuc tp parameter t parameter D t T 1000 100 z 3 a o N 10 single pulse 1 0 1 1 10 100 Vos V Rev 1 0 page 4 2006 03 03 Cinfineon 5 Typ output characteristics 15 f V ps Tj 25 C parameter V os 300 250 200 150 S 100 50 0 0 2 4 6 8 10 Vos IV 7 Typ transfer characteristics Ip 7 f Vas Vos 6V parameter T 320 280 240 Ip A Rev 1 0 IPB80N08S2 07 IPP80N08S2 07 IPI80NO8S2 07 6 Typ drain source on state resistance R bS on lD T 25 C parameter V as 40 35 30 25 20 Ros on mW 15 10 e N e A e eo e co e N e Ip A 8 Typ Forward transconductance gs 7 f Ip T 25 C parameter g fs 150 125 100 75 9s S 50 25 Ip A page 5 2006 03 03 Cinfineon 9 Typ Drain source on state resistance R ps oN f T parameter p 80 A Ves 10V 12 10 R oS on MQ 11 Typ capacitances C f Vps Veg 0V f 1 MHz L S o 10 10 0 5 10 15 Vos V Rev 1 0 10 Ciss page 6 IPB80N08S2 07 IPP80N08S2 07
3. 238 PB8ON 08S2 07 v Fa oe Cinfineon OptiMOS Power Transistor Features N channel Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package lead free Ultra low Rds on 10096 Avalanche tested IPB80N08S2 07 PG TO263 3 2 SP0002 19048 2N0807 PG TO263 3 2 IPB80N08S2 07 IPP80N08S2 07 IPI80N08S2 07 Product Summary R osion max SMD version foo 99 j PG TO220 3 1 PG TO262 3 1 2 tab gate IPP80N08S2 07 PG TO220 3 1 SP0002 19040 2N0807 pin 1 IPI8B0N08S2 07 PG TO262 3 1 SP0002 19043 2N0807 Maximum ratings at 7 25 C unless otherwise specified Parameter Symbol Value Unit Continuous drain current Ip Tc725 C Ves 10 V Pulsed drain current Gate source voltage Vos Operating and storage temperature T T s m 0 UO Il co gt N e e lt Avalanche energy single pulse eo eo Power dissipation IEC climatic category DIN IEC 68 1 Rev 1 0 gt 3 c page 1 2006 03 03 infi neon IPB80N08S2 07 Infineon IPP80N08S2 07 IPI8B0N08S2 07 Parameter Symbol Conditions mm typ ma Thermal characteristics Thermal resistance junction case K W Thermal resistance junction ambient leaded SMD version device on PCB R ma minimal footprint 8 Berre Electrical characteristics at 7 25 C unless otherwise specified Stat
4. ation For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office www infineon com Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies components may only be used in life support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Rev 1 0 page 8 2006 03 03
5. ic characteristics Drain source breakdown voltage V rpss Ves 0 V p7 1 mA 75 E V Gate threshold voltage Zero gate voltage drain current V ps 75 V V es 0 V T 125 C Gate source leakage current Drain source on state resistance Ves 10 V 15780 A SMD version Rev 1 0 page 2 2006 03 03 infi neon IPB80N08S2 07 Cn IPP80N08S2 07 IPIBONO8S2 07 Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time V 55 40 V Ves 10 V Turn off delay time 15780 A Rc 22 Q Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge V 55760 V 15780 A Gate charge total dz Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Ves 0 V 1 80 A T 25 C Diode forward voltage 2 VR 40 V lls Reverse recovery time di dt 100 A us 2 VR 40 V I E7l s Reverse recovery charge di dt 100 A us Current is limited by bondwire with an R nsc 0 5K W the chip is able to carry 132A at 25 C For detailed information see Application Note ANPSO71E at www infineon com optimos Defined by design Not subject to production test See diagram 13 Qualified at 20V and 20V Device on 40 mm x 40 mm x 1 5 mm epoxy PCB FR4 with 6 cm one layer 70 um thick copper area for drain connection PCB is vertical in still air Rev 1 0 page 3 2006 03 03 SE E IPB8
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