FAIRCHILD FSQ0265RN handbook
Contents
1. FSQ0365RN Rev 00 Figure 21 Pulse Width Modulation PWM Circuit 3 Synchronization The FSQ series employs a valley switching technique to minimize the switching noise and loss The basic waveforms of the valley switching converter are shown in Figure 22 To minimize the MOSFET s switching loss the MOSFET should be turned on when the drain voltage reaches its minimum value as shown in Figure 22 The minimum drain voltage is indirectly detected by monitoring the Vcc winding voltage as shown in Figure 22 Vv ds 300ns Delay MOSFET Gate FSQ0365RN Rev 00 Figure 22 Valley Resonant Switching Waveforms 4 Protection Circuits The FSQ series has several self protective functions such as Overload Protection OLP Abnormal Over Current protection AOCP Over Voltage Protection OVP and Thermal Shutdown TSD All the protections are implemented as Auto Restart Mode Once the fault condition is detected switching is terminated and the SenseFET remains off This causes Vcc to fall When Vcc falls down to the Under Voltage Lockout UVLO stop voltage of 8V the protection is reset and the startup circuit charges the Vcc capacitor When the Vcc reaches the start voltage of 12V the FSQ series resumes normal operation If the fault condition is not removed the SenseFET remains off and Vcc drops to stop voltage again In this manner www fairchild2. UVLO Threshold Voltage After Turn on Vstop All but With Free Running FSQ321 Frequency With Free Running Frequency ts s1 Internal Soft Start Time 1 ts s2 Internal Soft Start Time 2 FSQ321 Protection Section FSQ0365 Ty 25 C di dt 240mA us FSQ0265 Ty 25 C di dt 200mA us FSQ0165 Tj 25 C di dt 175mA us FSQ321 Ty 25 C di dt 125mA us Vsp Shutdown Feedback Voltage Vec 15V DELAY Shutdown Delay Current Vep 5V 13 luim Peak Current Limit fee Leading Edge Blanking Time Vove Over Voltage Protection Vec 15V Vep 2V Over Voltage Protection Blanking tove Time Tsp Thermal Shutdown Temperature Sync Section Vsu VsL Sync Threshold Voltage 13 14 tsync Sync Delay Time Total Device Section Operating Supply Current lop Control Part Only Vcc 15V Voec Vstart 0 1V IsTART Start Current Before Vcc Reaches Vstarr loh Startup Charging Current Vec 0V Vstp Minimum 40V Vstr Minimum Vstr Supply Voltage Notes 11 Pulse test Pulse Width 300us duty 2 12 Propagation delay in the control IC 13 Though guaranteed it is not 100 tested in production 14 Includes gate turn on time 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 7 19lManuo9 Hulyoms JJLA 10 ni Sd YOUMS 1 MOd P youe4 spo U39019 1LZE S910 S9
3. Figure 27 Valley Switching with Limited Freguency 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 lt Rev 1 0 6 15 When the resonant period is 2us Constant frequency FSQ0365RN Rev 00 Figure 28 Switching Frequency Range www fairchildsemi com 19Manuo9 buas AajjeA 10 wiSds YOUMS 1 MOd PIII BPO U30919 1ZE S91L0 S9Z0 S9E0OSS Typical Application Circuit of FSQ0365RN Application FPS Device Input Voltage Range Rated Output Power Output Voltage Maximum Current DVD Player Power Supply FSQO0365RN 85 265V ac 5 1V 1 0A 3 4V 1 0A 12V 0 4A 16V 0 3A Features m High efficiency gt 77 at universal input Low standby mode power consumption lt 1W at 230Vac input and 0 5W load m Reduce EMI noise through Valley Switching operation Enhanced system reliability through various protection functions Internal soft start 15ms Key Design Notes The delay time for overload protection is designed to be about 30ms with C107 of 47nF If faster slower triggering of OLP is required C107 can be changed to a smaller larger value eg 100nF for 60ms The input voltage of Vsync must be higher than 0 3V By proper voltage sharing by R106 amp R107 resistors the input voltage can be adjusted The SMD type 100nF capacitor must be placed as close as possible to Vcc pin to avoid malfunction by abrupt puls
4. CorePLUS CorePOWER CROSSVOLT cTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK Efficient ax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter FPS F PFS FRFET Global Power Resource Green FPS Green FPS e Series Gmax GTo IntelliM AXT ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionM ax Motion SPM mVWSaver OptoHiT OPTOLOGIC OPTOPLANAR PDP SPM Power SPM PowerTrench PowerxS Programmable Active Droop QFET GSTI Quiet Series RapidConfigure E Saving our world ImVWVWKVV at a time SignalVVise SmartM ax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT 3 SuperSOT 6 SuperSOT 8 Suprem os SyncFET Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER Sync Lock SYSTEM GENERAL The Power Franchise Pp wer Pat TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPVWM TinyVvire Transic TriFault Detect TRUECURRENT uwSerDes e S UHC Ultra FRFET UniFET VCX VisualM ax xs FAIRCHILD SEMICONDUCTOR RESERVES THE RIG
5. Name Description 1 GND SenseFET source terminal on primary side and internal control ground Vcc Positive supply voltage input Although connected to an auxiliary transformer winding current is supplied from pin 5 Vstr via an internal switch during startup see Figure 2 It is not until Vcc reaches the UVLO upper threshold 12V that the internal startup switch opens and device power is supplied via the auxiliary transformer winding The feedback voltage pin is the non inverting input to the PWM comparator It has a 0 9mA current source connected internally while a capacitor and opto coupler are typically connected externally There is a time delay while charging external capacitor C from 3V to 6V using an internal 5uA current source This delay prevents false triggering under transient conditions but still allows the protection mechanism to operate under true overload conditions This pin is internally connected to the sync detect comparator for valley switching Typically the voltage of the auxiliary winding is used as Sync input voltage and external resistors and capacitor are needed to make delay to match valley point The threshold of the internal sync comparator is 0 7V 0 2V This pin is connected to the rectified AC line voltage source At startup the internal switch supplies internal bias and charges an external storage capacitor placed between the Vcc pin and ground Once the Vcc reaches 12V the internal
6. f 1MH utput Capacitance 0V Vps 25V f 1MHz aes FSQ0165 Pe FSQ321 FSQ0365 Reverse Transfer FSQ0265 Capacitance FSQ0165 FSQ321 FSQ0365 FSQ0265 Turn On Delay Vpp 350V Ip 25mA FSQ0165 FSQ321 FSQ0365 f FSQ0265 Rise Time Vpp 350V Ip 25mA FSQ0165 FSQ321 FSQ0365 FSQ0265 Turn Off Delay Vpp 350V Ip 25mA FSQ0165 FSQ321 FSQ0365 l FSQ0265 Fall Time Vpo 350V Ip 25MA FSQ0165 FSQ321 Ves 0V Vps 25V f 1MHz Burst Mode Section VBURH Veur Burst Mode Voltage T 25 C tpp 200ns VBuR HYS Continued on the following page 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 6 19Manuo9 HulyouMs AajjeA 4104 ni Sd YOUMS 1 MOd P youe4 spo U9915H 1LZE S910 S9Z0 S9E0OSS Electrical Characteristics Continued T a 25 C unless otherwise specified Symbol Parameter Conditions Control Section All but ton max1 Maximum On Time FSQ321 T 25 C ton max2 Maximum On Time2 FSQ321 Tj 25 C All but FSQ321 te2 Blanking Time2 FSQ321 Detection Time Window Ty 25 C Vsync 0V Switching Frequency Variation 25 C lt Tj lt 85 C Feedback Source Current Vep OV Duin Minimum Duty Cycle Vep OV tay Blanking Time1 VSTART
7. Vs vs Ta Normalized 25 Temperature C Figure 18 Shutdown Feedback Voltage Vsp vs Ta 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 Normalized 25 Temperature C Sync Low Threshold Voltage Vs vs Ta Normalized 25 Temperature C Figure 19 Over Voltage Protection Vop vs Ta 11 www fairchildsemi com JaWOAUOD buas AajjeA 10 w Sdd YOUMS 1 MOd PIII po U30919 LZE G9L0 S9Z0 G9E00S4 Functional Description 1 Startup At startup an internal high voltage current source supplies the internal bias and charges the external capacitor Ca connected to the Vcc pin as illustrated in Figure 20 When Vcc reaches 12V the FPS begins switching and the internal high voltage current source is disabled The FPS continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless Vcc goes below the stop voltage of 8V Internal Bias Figure 20 Startup Circuit FSQO365RN Rev 00 2 Feedback Control FPS employs Current Mode control as shown in Figure 21 An opto coupler such as FOD817A and shunt regulator such as KA431 are often used to implement the feedback network Comparing the feedback voltage with the voltage across the Rsense resistor makes it possible to control the switching duty cycle When the reference pin voltage of the shunt regulator exceeds the intern
8. tt 2 3 disabled FSQO365RN Rev 00 t4 Figure 26 Waveforms of Burst Operation 7 Switching Frequency Limit To minimize switching loss and Electromagnetic Interference EMI the MOSFET turns on when the drain voltage reaches its minimum value in valley switching operation However this causes switching frequency to increases at light load conditions As the load decreases the peak drain current diminishes and the switching frequency increases This results in severe switching losses at light load condition as well as intermittent switching and audible noise Because of these problems the valley switching converter topology has limitations in a wide range of applications To overcome this problem FSQ series employs a frequency limit function as shown in Figure 27 and Figure 28 Once the SenseFET is turned on the next turn on is prohibited during the blanking time tg After the blanking time the controller finds the valley within the detection time window ty and turns on the MOSFET as shown in Figure 27 and Figure 28 cases A B and C If no valley is found during tw the internal SenseFET is forced to turn on at the end of tw case D Therefore FSQ devices have a minimum switching frequency of 55kHz and a maximum switching frequency of 67kHz as shown in Figure 28 www fairchildsemi com 14 JaWOAUOD buas AajjeA 10 wiSds YOUMS 1 MOd PIII PON U30919 1ZE S91L0 S9Z0 S9E0OSS max 185 FSOO365RN Rev 00
9. 0 050mm 2 Layer Table 2 Electrical Characteristics Pin Specification Remarks Inductance 1 3 1 4mH 10 100kHz 1V Leakage 1 3 25uH Maximum Short All Other Pins Core amp Bobbin m Core EER2828 Ae 86 66mm Bobbin EER2828 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 17 J H AUOJ Hulyoyms AgjjeA 410 ni Sd YOUMS 1 MOd P youe4 spo U9915 1LZE S910 S9Z0 S9E0OSS Table 3 Demo Board Part List Part Value Note Value Resistor 1W 10pH 1 2W 10uH 1 4W 4 9uH 1 4W 4 9uH 1 4W 1 4W IN4007 1W IN4004 1 4W 1N4746A 1 4W 1N4148 1 4W UF4003 1 4W UF4003 1 4W SB360 Capacitor SB360 100NF 275Vac Box Capacitor 100NF 275V ac Box Capacitor IC 33uF 400V Electrolytic Capacitor FSQ0365RN FPS 10nF 630V Film Capacitor KA431 TL431 Voltage reference 47nF 50V Mono Capacitor FOD817A Opto coupler 100nF 50V SMD 1206 Fu 22uF 50V Electrolytic Capacitor 2A 250V 33pF 50V Ceramic Capacitor NTC 470uF 35V Electrolytic Capacitor 5D 9 470uF 35V Electrolytic Capacitor Bridge Diode 470uF 35V Electrolytic Capacitor 2KBPO6M2N257 Bridge Diode 470uF 35V Electrolytic Capacitor Line Filter 100
10. 0yUF 10V Electrolytic Capacitor 40mH 1000yUF 10V Electrolytic Capacitor Transformer 1000uF 10V Electrolytic Capacitor 1000uF 10V Electrolytic Capacitor Varistor 100nF 50V Ceramic Capacitor 10D471K 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 lt Rev 1 0 6 18 www fairchildsemi com 19Manuo9 HulyoMs JJLA 410 ni Sd YOUMS 1 MOd P youe4 spo U39419 1LZE S910 S9Z0 S9E0OSS Package Dimensions 400 10 15 373 9 46 6 a 036 0 9 TYP 092 22 337 PIN 1 f 032 R0 813 250 005 6 35 0 13 PIN 1 1 4 B 1 TOP VIEW TOP VIEW OPTION 1 OPTION 2 070 ie ae 03 E 310 010 7 87 0 25 130 005 3 3 0 13 e wP T 210 MAX 4 5 33 Zo Hi Cc 015 MIN 021 0 53 0 38 015 10 37 140 3 55 300 125 337 7 62 001 025 41 100 430 MAX 2 54 10 92 NOTES 60 MAK A CONFORMS TO JEDEC REGISTRATION MS 001 mace eee VARIATIONS BA 010 00 02246060 B CONTROLING DIMENSIONS ARE IN INCHES REFERENCE DIMENSIONS ARE IN MILLIMETERS C DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 010 INCHES OR 0 25MM D DOES NOT INCLUDE DAMBAR PROTRUSIONS DAMBAR PROTRUSIONS SHALL NOT EXCEE
11. 8 LSOP Tape amp Reel 8 DIP 8 LSOP 8 LSOP Tape amp Reel 40 to 85 C FSQ321LX FSQ0165RN FSQ0165RL 40 to 85 C FSQ0165RLX FSQ0265RN FSQ0265RL 8 DIP 8 LSOP 40 to 85 C 1 2A 60 14W 8 DIP 8 LSOP FSQ0365RN 40 to 85 C FSQ0365RL 1 5A 4 50 17 5W Notes 1 The junction temperature can limit the maximum output power 2 230Vac or 100 115Vac with voltage doubler The maximum power with CCM operation 3 Typical continuous power in a non ventilated enclosed adapter measured at 50 C ambient temperature 4 Maximum practical continuous power in an open frame design at 50 C ambient temperature 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 Replaces Devices FSDL321 FSDM311 FSDLO165RN FSDM0265RN FSDM0265RNB FSDMO0365RN FSDMO0365RNB www fairchildsemi com 19Manuo9 Hulyo Ms AajjeA 410 ni Sd YOUMS 1 MOd P youe4 spo U39019 1ZE S910 S9Z0 S9E0OSS Application Circuit Figure 1 Internal Block Diagram Vcc Good FSQO365RN Rev 00 Figure 2 Internal Block Diagram 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 lt Rev 1 0 6 3 19Manuo9 buas AajjeA 10 wiSds YOUMS 1 MOd PIII PON U30919 1ZE S910 S9Z0 S9E0OSS Pin Assignments Pin Definitions FSQ0365RN Rev 01 Figure 3 Pin Configuration Top View Pin
12. D 010 INCHES OR 0 25MM E DIMENSIONING AND TOLERANCING PER ASME Y14 5M 1994 NO8EREVG Figure 31 8 Lead Dual Inline Package DIP Package drawings are provided as a service to customers considering Fairchild components Drawings may change in any manner without notice Please note the revision and or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision Package specifications do not expand the terms of Fairchild s worldwide terms and conditions specifically the warranty therein which covers Fairchild products Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings http www fairchildsemi com packaging 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 19 JaWOAUOD buas AajjeA 10 wiSds YOUMS 1 MOd PIII BPO U30919 1ZE S91L0 S9Z0 S9E0OSA Package Dimensions Continu ed LANI TE A THI DIME MOLI D DIMEN ASME DETAIL ALE 2X MKT MLSOPO8ArevA Fi
13. HT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TOIMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABIUTY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDERITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDVVIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION Asused herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user 2 A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Ant Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www fairchildserni com under Sal
14. Z0 S9E0OSS Comparison Between FSDMOx65RNB and FSQ Series Function FSDMO0x65RNB FSQ Series Advantages of FSQ Series Operation Method Constant Frequency PWM Valley Switching Operation Improved efficiency by valley switching Reduced EMI noise EMI Reduction Frequency Modulation Valley Switching amp Inherent Frequency Modulation m Reduce EMI noise in two ways Burst Mode Operation Fixed Burst Peak Advanced Burst Mode Improved standby power by valley switching also in burst mode Because the current peak during burst operation is dependent on Vps it is easier to solve audible noise Protection Improved reliability through precise abnormal over current protection 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 www fairchildsemi com 19Manuo9 HulyoMs AajjeA 10 ni Sd YOUMS 1 MOd P youe4 spo U9915H 1LZE S910 S9Z0 S9E0OSS Typical Performance Characteristics Characteristic graphs are normalized at T 25 C Normalized Normalized 25 25 Temperature C Temperature C Figure 4 Operating Supply Current lop vs Ta Figure 5 UVLO Start Threshold Voltage Vstart vs Ta Normalized Normalized 25 25 Temperature C Temperature C UVLO Stop Threshold Voltage Vstop Figure 7 Startup Charging Current Icy vs Ta vs Ta Norm
15. al reference voltage of 2 5V the opto coupler LED current increases pulling down the feedback voltage and reducing the duty cycle This event typically occurs when input voltage is increased or output load is decreased 2 1 Pulse by Pulse Current Limit Because Current Mode control is employed the peak current through the SenseFET is limited by the inverting input of PWM comparator Vfg as shown in Figure 21 Assuming that the 0 9mA current source flows only through the internal resistor 3R R 2 8kQ the cathode voltage of diode D2 is about 2 5V Since D1 is blocked when the feedback voltage Veg exceeds 2 5V the maximum voltage of the cathode of D2 is clamped at this voltage clamping Vfg Therefore the peak value of the current through the SenseFET is limited 2 2 Leading Edge Blanking LEB At the instant the internal SenseFET is turned on a high current spike usually occurs through the SenseFET caused by primary side capacitance and secondary side rectifier reverse recovery Excessive voltage across the Rsense resistor would lead to incorrect feedback operation in the Current Mode PWM control To counter this effect the FPS employs a leading edge blanking LEB circuit This circuit inhibits the PWM comparator for a short time tLes after the SenseFET is turned on 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 Vo i Ves FOD817A SenseFET
16. alized Normalized 25 i 25 Temperature C Temperature C Figure 8 Initial Switching Frequency fs vs Ta Figure 9 Maximum On Time ton max VS Ta 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 9 JaWOAUOD buas AajjeA 10 w Sdd YOUMS 1 MOd PIII BPO U30919 LZE G9L0 S9Z0 G9E00S4 Typical Performance Characteristics Continued Characteristic graphs are normalized at T j 25 C Normalized Normalized 25 25 Temperature C Temperature C Figure 10 Blanking Time tg vs Ta Figure 11 Feedback Source Current Irs vs Ta Normalized Normalized 25 25 Temperature C Temperature C Figure 13 Burst Mode High Threshold Voltage Vpurn Figure 12 Shutdown Delay Current Ipe_ay vs Ta vs T IA Normalized Normalized 25 25 Temperature C Temperature C Figure 14 Burst Mode Low Threshold Voltage Vpur Figure 15 Peak Current Limit lm vs vs Ta 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 10 19Manuo9 buas AajjeA 10 wiSds YOUMS 1 MOd PIII PON U30919 LZE G9L0 S9Z0 GS9E00S4 Typical Performance Characteristics Continued Characteristic graphs are normalized at T j 25 C Normalized Temperature C Figure 16 Sync High Threshold
17. ating noises and to improved surge immunity Schematic 100nF 275V 4 10D471K AC IN 1C101 FSQ0365RN R103 5Q 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 D102 AN 4004 R104 12k LOL 9019 Any 1C202 FOD817A Figure 29 Demo Circuit of FSQ0365RN 16 FSQ0365RN Rev 00 www fairchildsemi com 19Manuo9 buas AajjeA 10 wiSds YOUMS 1 MOd PIII PON U391H 1ZE S910 S9Z0 S9E0OS4 Transformer EER2828 FSQO365RN Rev 00 Figure 30 Transformer Schematic Diagram of FSQ0365RN Table 1 Winding Specification No Pin sf Wire Turns Winding Method N 2 32 0 25 x 1 50 Center Solenoid Winding Insulation Polyester Tape t 0 050mm 2 Layer Ngav 958 0 332 x 2 Center Solenoid Winding Insulation Polyester Tape t 0 050mm 2 Layer Ney 639 0 33 x 1 Center Solenoid Winding Insulation Polyester Tape t 0 050mm 2 Layer Na 455 0 25 x 1 Center Solenoid Winding Insulation Polyester Tape t 0 050mm 2 Layer Nay 1012 0 33 x 3 Center Solenoid Winding Insulation Polyester Tape t 0 050mm 3 Layer Nueyv 11312 0 33 x 3 Center Solenoid Winding Insulation Polyester Tape t 0 050mm 2 Layer N 2 2 gt 1 0 25 Center Solenoid Winding Insulation Polyester Tape t
18. e PWM controller includes an integrated fixed frequency oscillator under voltage lockout Leading Edge Blanking LEB optimized gate driver internal soft start temperature compensated precise current sources for loop compensation and self protection circuitry Compared with discrete MOSFET and PWM controller solutions the FSQ series reduces total cost component count size and weight while simultaneously increasing efficiency productivity and system reliability This device provides a basic platform for cost effective designs of valley switching fly back converters Related Application Notes AN 4137 Design Guidelines for Offline Flyback Converters Using Fairchild Power Switch FPS AN 4141 Troubleshooting and Design Tips for Fairchild Power Switch FPS Flyback Applications AN 4147 Design Guidelines for RCD Snubber of Flyback Converters AN 4150 Design Guidelines for Flyback Converters Using FSQ series Fairchild Power Switch FPS AN 4134 Design Guidelines for Off line Forward Converters Using Fairchild Power Switch FPS www fairchildsemi com 19Manuo9 Hulyoms AayjeA 10 ni Sd YOUMS 1 MOd PI Yyd11e4 BPO U39019 LZE S9L0 G9Z0 S9E00S4 Ordering Information Part Number Package Temperature Operating Current Rps on Maximum Output Table 230Vac 15 85 265V ac Basti Adapter Open Limit Max Adapter Frame FSQ321 FSQ321L 8 DIP 8 LSOP
19. ee FAIRCHILD seh ee ee SEMICONDUCTOR August 2011 FSQ0365 FSQ0265 FSQ0165 FSQ321 Green Mode Fairchild Power Switch FPS for Valley Switching Converter Low EMI and High Efficiency Features Optimized for Valley Switching Converter VSC Low EMI through Variable Frequency Control and Inherent Frequency Modulation High Efficiency through Minimum Voltage Switching Narrow Frequency Variation Range Over Wide Load and Input Voltage Variation Advanced Burst Mode Operation for Low Standby Power Consumption Pulse by Pulse Current Limit Protection Functions Overload Protection OLP Over Voltage Protection OVP Abnormal Over Current Protection AOCP Internal Thermal Shutdown TSD Under Voltage Lockout UVLO with Hysteresis Internal Startup Circuit Internal High Voltage SenseFET 650V Built in Soft Start 15ms Applications Power Supplies for DVP Player DVD Recorder Set Top Box Adapter m Auxiliary Power Supply for PC LCD TV and PDP TV 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 lt Rev 1 0 6 Description A Valley Switching Converter generally shows lower EMI and higher power conversion efficiency than a conventional hard switched converter with a fixed switching frequency The FSQ series is an integrated Pulse Width Modulation PWM controller and SenseFET specifically designed for valley switching operation with minimal external components Th
20. es Support Counterfeiting of serriconductor partsis a growing problem in the industry All manufacturers of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts expenence many problems such as loss of brand reputation substandard performance failed applications and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers fromthe proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authonzed Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handling and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Da
21. g Ambient Temperature 85 Tstc Storage Temperature 150 Human Body Model JESD22 A114 CLASS 1C Machine Model JESD22 A115 CLASS B ESD Notes 5 Repetitive rating Pulse width limited by maximum junction temperature 6 L 51mH starting Tj 25 C Thermal Impedance Symbol Parameter 8 DIP Bsn Junction to Ambient Thermal Resistance Bic Junction to Case Thermal Resistance 10 OJT Junction to Top Thermal Resistance Notes 7 All items are tested with the standards JESD 51 2 and 51 10 DIP 8 Free standing with no heat sink under natural convection 9 Infinite cooling condition refer to the SEMI G30 88 10 Measured on the package top surface 2007 Fairchild Semiconductor Corporation www fairchildsemi com FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 5 19Manuo9 Hulyoyms AgjjeA 410 ni Sd YOUMS 1 MOd PI youe4 apo U9915H 1LZE S910 S9Z0 S9E0OSS Electrical Characteristics T 25 C unless otherwise specified Symbol Parameter Condition SenseFET Section BVpss Drain Source Breakdown Voltage Vec 0V Ip 100uUA loss Zero Gate Voltage Drain Current Vps 650V FSQ0365 Drain Source On FSQ0265 State Resistance FSQo165 Rpscon Ty 25 C Ip 0 5A FSQ321 FSQ0365 l tC it FSA Ves 0V Vps 25V f 1MH nput Capacitance 0V Vps 25V f 1MHz SIA FSQ0165 ie FSQ321 FSQ0365 Output C it je kai Ves 0V Vps 25V
22. gure 32 8 Lead MLSOP PATTERI NLE PACKAGE RRENT PACKAGE B ALL DIMENSION IO RECOMMENDATIO THERWISE SPECIFIEL ESNOT NFORM TO A TANDARI ARE IN MILLIMETEF ARE EXCLUSIVE OF BURI FLASH AND TIE BAR EXTI lO IONS AND TOLERANCES PEI oM 1994 Package drawings are provided as a service to customers considering Fairchild components Drawings may change in any manner without notice Please note the revision and or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision Package specifications do not expand the terms of Fairchild s worldwide terms and conditions specifically the warranty therein which covers Fairchild products Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings http www fairchildsemi com packaging 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 20 www fairchildsemi com 19Manuo9 buas AajjeA 10 wiSds YOUMS 1 MOd PIII BPO U30919 1ZE S91L0 S9Z0 S9E0OSA ga FAIRCHILD aana SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered tradernarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool AccuPower Auto SPM AX CAPT Bitsic Build it Now
23. pplied to the latch resulting in the shutdown of the SMPS Figure 25 Abnormal Over Current Protection www fairchildsemi com 13 19Manuo9 buas AajjeA 10 wiSds YOUMS 1 MOd PIII BPO U30919 LZE G9L0 S9Z0 GS9E00S4 4 3 Over Voltage Protection OVP If the secondary side feedback circuit malfunctions or a solder defect causes an opening in the feedback path the current through the opto coupler transistor becomes almost zero Then Vrg climbs up in a similar manner to the overload situation forcing the preset maximum current to be supplied to the SMPS until the overload protection triggers Because more energy than required is provided to the output the output voltage may exceed the rated voltage before the overload protection triggers resulting in the breakdown of the devices in the secondary side To prevent this situation an OVP circuit is employed In general the peak voltage of the sync signal is proportional to the output voltage and the FSQ series uses a sync signal instead of directly monitoring the output voltage If the sync signal exceeds 6V an OVP is triggered shutting down the SMPS To avoid undesired triggering of OVP during normal operation the peak voltage of the sync signal should be designed below 6V 4 4 Thermal Shutdown TSD The SenseFET and the control IC are built in one package This makes it easy for the control IC to detect the abnormal over temperature of the SenseFET If the temperature exceed
24. s 150 C the thermal shutdown triggers 5 Soft Start An internal soft start circuit increases PWM comparator inverting input voltage with the SenseFET current slowly after it starts up The typical soft start time is 15ms The pulsewidth to the power switching device is progressively increased to establish the correct working conditions for transformers inductors and capacitors The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage This helps prevent transformer saturation and reduces stress on the secondary diode during startup 6 Burst Operation To minimize power dissipation in Standby Mode the FPS enters Burst Mode operation As the load decreases the feedback voltage decreases As shown in Figure 26 the device automatically enters Burst Mode when the feedback voltage drops below Veur 350mV At this point switching stops and the output voltages start to drop at a rate dependent on standby current load This causes the feedback voltage to rise Once it passes Vpury 550mV switching resumes The feedback voltage then falls and the process repeats Burst Mode alternately enables and disables switching of the power SenseFET reducing switching loss in Standby Mode 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 Rev 1 0 6 Switching H BN i Switching i isable Be ad i
25. semi com 12 JaWOAUOD buas AajeA 10 ni Sd YOUMS 1 MOd PIII BPO U391H 1ZE S910 S9Z0 S9E0OSA the auto restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated Because these protection circuits are fully integrated into the IC without external components the reliability is improved without increasing cost Fault occurs Fault removed D an Normal operation lt ee Normal Fault FSQ0365RN Rev 00 operation situation Figure 23 Auto Restart Protection Waveforms 4 1 Overload Protection OLP Overload is defined as the load current exceeding its normal level due to an unexpected abnormal event In this situation the protection circuit should trigger to protect the SMPS However even when the SMPS is in the normal operation the overload protection circuit can be triggered during load transition To avoid this undesired operation the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation Because of the pulse by pulse current limit capability the maximum peak current through the SenseFET is limited and therefore the maximum input power is restricted with a given input voltage If the output consumes more than this maximum power the output voltage Vo decreases below the set voltage This reduces the current through the opto coupler LED which also red
26. switch is opened The drain pins are designed to connect directly to the primary lead of the transformer and are capable of switching a maximum of 650V Minimizing the length of the trace connecting these pins to the transformer decreases leakage inductance 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 lt Rev 1 0 6 4 www fairchildsemi com 19lManuo9 Hulyo Ms JJLA 410 ni Sd YOUMS 1 MOd P youe4 spo U9915 1ZE S910 S9Z0 S9E0OSS Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended In addition extended exposure to stresses above the recommended operating conditions may affect device reliability The absolute maximum ratings are stress ratings only Ta 25 C unless otherwise specified Symbol Parameter Min Max Unit Vstr Vstr Pin Voltage 500 V Vos Drain Pin Voltage 650 Vec Supply Voltage 20 VEB Feedback Voltage Range 0 3 9 0 Vsync Sync Pin Voltage 0 3 9 0 FSQ0365 FSQ0265 8 0 FSQ0165 4 0 FSQ321 1 5 FSQ0365 230 FSQ0265 140 FSQ0165 50 FSQ321 10 Pp Total Power Dissipation 1 5 V V V V lom Drain Current Pulsed Single Pulsed Avalanche Energy Ty Recommended Operating Junction Temperature Internally Limited Ta Operatin
27. tasheet Identification PN na A aaa a Formative In Design Datasheet contains the design specifications for product development Specificatians may change in any manner without notice Preliminary a A NANG Gara Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design No Identification Needed Full Production Datasheet contains final specifications Fairchild Semiconductor reserves the right ta make changes at any time without notice to improve the design Obsolete Not In Produetion Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor The datasheet is for reference information only 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 lt Rev 1 0 6 21 JaWOAUOD buas AajjeA 10 wiSds YOUMS 1 MOd PIII BPO U30919 1ZE S91L0 S9Z0 S9E0OSA www fairchildsemi com
28. uces the opto coupler transistor current thus increasing the feedback voltage Vrs If Ves exceeds 2 8V D1 is blocked and the 5pA current source starts to charge CB slowly up to Vcc In this condition Veep continues increasing until it reaches 6V when the switching operation is terminated as shown in Figure 24 The delay for shutdown is the time required to charge CB from 2 8V to 6V with 5A A 20 50ms delay is typical for most applications 2007 Fairchild Semiconductor Corporation FSQ0365 FSQ0265 FSQ0165 FSQ321 lt Rev 1 0 6 FSQ0365RN Rev 00 Overload protection tio Cra 6 0 2 8 elay t Figure 24 Overload Protection 4 2 Abnormal Over Current Protection AOCP When the secondary rectifier diodes or the transformer pins are shorted a steep current with extremely high di dt can flow through the SenseFET during the LEB time Even though the FSQ series has Overload Protection OLP it is not enough to protect the FSQ series in that abnormal case since severe current stress is imposed on the SenseFET until OLP triggers The FSQ series has an internal Abnormal Over Current Protection AOCP circuit as shown in Figure 25 When the gate turn on signal is applied to the power SenseFET the AOCP block is enabled and monitors the current through the sensing resistor The voltage across the resistor is compared with a preset AOCP level If the sensing resistor voltage is greater than the AOCP level the set signal is a
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FAIRCHILD FSQ0265RN handbook