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FAIRCHILD KSC1008 NPN Epitaxial Silicon Transistor handbook

1. Es FAIRCHILD SEMICONDUCTOR KSC1008 NPN Epitacial Silicon Transistor Features Low frequency amplifier medium speed switching High Collector Base Voltage Vcgo 80V Collector Current lo 700mMA Collector Power Dissipation Pp 800mW Suffix C means Center Collector 1 Emitter 2 Collector 3 Base Complement to KSA708 Non suffix C means Side Collector 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings E Ta 25 C unless otherwise noted September 2006 d A TO 92 123 KSC1008 1 Emitter 2 Base 3 Collector KSC1008C 1 Emitter 2 Collector 3 Base Symbol Parameter Value Units VcBo Collector Base Voltage 80 V VcEo Collector Emitter Voltage 60 V VeBo Emitter Base Voltage 8 V lc Collector current 700 mA Pc Collector Power Dissipation 800 mW Ty Junction Temperature 150 C Ttg Storage Temperature 55 150 C 1 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired 2 These are steady state limits The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics i Ta 25 C unless otherwise noted Symbol Parameter Test Condition Min Typ Max Units BVcBo Collector Base Breakdown Voltage Ic 100nA lg 0 80 V BVcgo Collector Emitter
2. COLLECTOR BASE VOLTAGE Figure 5 Collector Output Capacitance hre DC CURRENT GAIN Ic mA COLLECTOR CURRENT 240 220 200 180 160 100 1000 100 Vee 2V 10 100 1000 Ic mA COLLECTOR CURRENT Figure 2 DC current Gain Vce 2V 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vee V BASE EMITTER VOLTAGE Figure 4 Base Emitter On Voltage KSC1008 Rev B www fairchildsemi com 401sisueJ UOJIJIS 219e1d3 NdN 800L9SM Package Dimensions TO 92 Straight Lead Form 4 58 015 4 58 0 20 0 46 0 10 14 47 10 40 H 0 10 1 27TYP 0 38 505 1 27 40 20 1 27TYP 1 27 20 20 1 3 86MAX 0 25 1 02 0 10 o 3 Dimensions in Millimeters TO 92 0 200 In Line Spacing Lead Form 90 060 91 52 0 010 0 254 DEEP Dimensions in Inches Millimeters KSC1008 Rev B www fairchildsemi com 40 sISUEJ UOJIJIS JEI2e Id3 NdN 800L9SM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FACT Quiet Series OCX SILENT SWITCHER UltraFET ActiveArray GlobalOptoisolator OCXPro SMART START U
3. 2 TAPE amp AMMO 2 000 1 Emitter 2 Base 3 Collector KSC1008RBU C1008R TO 92 BULK 1 Emitter 2 Base 3 Collector KSC1008RTA C1008R TO 92 TAPE amp AMMO 2 000 1 Emitter 2 Base 3 Collector KSC1008YBU C1008Y TO 92 BULK 1 Emitter 2 Base 3 Collector KSC1008YTA C1008Y TO 92 TAPE amp AMMO 2 000 1 Emitter 2 Base 3 Collector KSC1008YTF C1008Y TO 92 TAPE amp REEL 2 000 1 Emitter 2 Base 3 Collector Note Affix C center collector pin Affix R O Y G hy classification Suffix BU Bulk packing straight lead form see package dimensions Suffix TF Tape amp Reel packing 0 200 In Line Spacing lead form see package dimensions SUffix TA Tape amp AMMO packing 0 200 In Line Spacing lead form see package dimensions KSC1008 Rev B www fairchildsemi com 101SISUBI UOJIJIS eped NdN 80010S Typical Characteristics ls 1 8mA 180 lg 1 6mA 2 2 40 Ic mA COLLECTOR CURRENT El S 20 Vce V COLLECTOR EMITTER VOLTAGE Figure 1 Static Characteristic 10 lc 10lg Vae sat 0 1 Vce sat Vec sat Voe sat V SATURATION VOLTAGE 1 10 100 1000 Ic mA COLLECTOR CURRENT Figure 3 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage 100 f 1MHz le 0 Ca pF CAPACTIANCE 1 10 100 Vce V
4. Breakdown Voltage Ic 10mA Ip 0 60 V BVeBo Emitter Base Breakdown Voltage le 10uA I 0 8 V lcBo Collector Cut off Current Vcg 60V lg 0 0 1 uA lEBo Emitter Cut off Current Vgg 5V Ic 0 0 1 uA hfg DC Current Gain Vcg 2V lg 50mA 40 400 Vcg sat Collector Emitter Saturation Voltage lc 500mA Ig 50mA 0 2 0 4 V Vege sat Base Emitter Saturation Voltage lc 500mA lg 50mA 0 86 1 1 V fr Current Gain Bandwidth Product Vcg210V Ic 50mA 30 50 MHz Cob Output Capacitance Vop 10V lg 0 f 1MHz 8 pF DC Item are tested by Pulse Test Pulse Width lt 300us Duty Cycle lt 2 hfg Classification Classification R O Y G Nee 40 80 70 140 120 240 200 400 2006 Fairchild Semiconductor Corporation KSC1008 Rev B www fairchildsemi com JO SISUBAL UOJIJIS 21981d3 NdN 800L9SM Package Marking and Ordering Information Device note Device Marking Package Packing Method Qty pcs Pin Definitions KSC1008COBU C10080C TO 92 BULK 1 Emitter 2 Collector 3 Base KSC1008COTA C10080C TO 92 TAPE amp AMMO 2 000 1 Emitter 2 Collector 3 Base KSC1008CYBU C1008YC TO 92 BULK 1 Emitter 2 Collector 3 Base KSC1008CYTA C1008YC TO 92 TAPE amp AMMO 2 000 1 Emitter 2 Collector 3 Base KSC1008GBU C1008G TO 92 BULK s 1 Emitter 2 Base 3 Collector KSC1008GTA C1008G TO 92 TAPE amp AMMO 2 000 1 Emitter 2 Base 3 Collector KSC10080BU C10080 TO 92 BULK B 1 Emitter 2 Base 3 Collector KSC10080TA C10080 TO 9
5. CAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete N
6. niFET Bottomless GTO OPTOLOGIC SPM VCX Build it Now HiSeC OPTOPLANAR Stealth Wire CoolFET I2 G PACMAN SuperFET CROSSVOLT i Lo M POP SuperSOT 3 DOME ImpliedDisconnect Power247 SuperSOT 6 EcoSPARK IntelliMAX PowerEdge SuperSOT 8 E CMOS ISOPLANAR PowerSaver SyncFET EnSigna LittleFET PowerTrench TCM FACT MICROCOUPLER QFET TinyBoost FAST MicroFET Qs TinyBuck FASTr MicroPak QT Optoelectronics TinyPWM FPS MICROWIRE Quiet Series TinyPower FRFET MSX RapidConfigure TinyLogic MSXPro RapidConnect TINYOPTO Across the board Around the world uSerDes TruTranslation The Power Franchise ScalarPump UHC Programmable Active Droop DISCLAIMER 401sisueJ UOJIJIS Jeroe1d3 NdN 800l0S FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPE CIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITI
7. ot In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev 120 5 www fairchildsemi com KSC1008 Rev B

FAIRCHILD KSC1008 NPN Epitaxial Silicon Transistor handbook

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