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FAIRCHILD BSV52 NPN Switching Transistor handbook

1. P p POWER DISSIPATION mW l s1 TURN ON BASE CURRENT mA 10 100 Ic COLLECTOR CURRENT mA 100 125 TEMPERATURE C cSAS NPN Switching Transistor continued Test Circuits 10 Pulse waveform at point A Pulse generator Vp Rise Time lt 1ns Source Impedance 50Q PW gt 300 ns Duty Cycle lt 2 0 0023nF To sampling oscilloscope input impedance 50Q Rise Time lt 1 ns IN Pulse generator Vy Rise Time lt 1ns Source Impedance 509 PW gt 300 ns Duty Cycle lt 2 t _ Measurement Circuit FIGURE 2 tow torf cSAS TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FASTr PowerTrench SyncFET Bottomless GlobalOptoisolator QFET TinyLogic CoolFET GTO Qs UHC CROSSVOLT HiSeC QT Optoelectronics VCX DOME ISOPLANAR Quiet Series E CMOS MICROWIRE SILENT SWITCHER EnSigna OPTOLOGIC SMART START FACT OPTOPLANAR SuperSOT 3 FACT Quiet Series PACMAN SuperSOT 6 FAST POP SuperSOT 8 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAI
2. Io 10lp Ipo 1 5 10 20 ty 50 100 lc COLLECTOR CURRENT mA Storage Time vs Turn On and Turn Off Base Currents N Oo l b1 TURN ON BASE CURRENT mA Storage Time vs Turn On and Turn Off Base Currents I 100 mA Vcc 3 0 V 4 0 ns t s 3 0 ns 5 10 15 20 25 30 1g TURN ON BASE CURRENT mA cSAS4 NPN Switching Transistor continued Typical Characteristics continued Fall Time vs Turn On Fall Time vs Turn On and Turn Off Base Currents and Turn Off Base Currents l go TURN OFF BASE CURRENT mA l s2 TURN OFF BASE CURRENT mA Iz TURN ON BASE CURRENT mA 13 TURN ON BASE CURRENT mA Fall Time vs Turn On Delay Time vs Base Emitter OFF and Turn Off Base Currents Voltage and Turn On Base Current T E z mj oc oc 5 8 a lt m iL re e z i 5 fc oO Veeor BASE EMITTER OFF VOLTAGE V 10 20 Ig TURN ON BASE CURRENT mA 13 TURN ON BASE CURRENT mA Rise Time vs Turn On Base Power Dissipation vs Current and Collector Current Ambient Temperature a oO Vcc 3 0 V 10 t 20
3. No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only
4. i D 0 4 wi He re gt oc E a wi on lt a t f t a gt 1 10 COLLECTOR CURRENT mA 2 1 10 100 300 l c COLLECTOR CURRENT mA V seon BASE EMITTER ON VOLTAGE V Collector Cut off Current vs Ambient Temperature 8 20V oO oO oO lcgo COLLECTOR CURRENT nA 50 75 100 125 T AMBIENT TEMPERATURE C cSAS Typical Characteristics continued CAPACITANCE pF G n wW z z 2 no Output Capacitance vs Reverse Bias Voltage F 1 0MHz l c 10 mA 151 3 0 mA lp2 1 5 MA Veg 3 0 V 0 5 50 75 10 T l s2 TURN OFF BASE CURRENT mA 0 5 1 5 10 REVERSE BIAS VOLTAGE V Switching Times vs Ambient Temperature TEE E a AMBIENT TEMPERATURE C Storage Time vs Turn On and Turn Off Base Currents 0 1g TURN ON BASE CURRENT mA SWITCHING TIMES ns l s2 TURN OFF BASE CURRENT mA s2 TURN OFF BASE CURRENT mA NPN Switching Transistor continued Switching Times vs Collector Current Vec 3 0 V
5. RCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which a are intended for surgical implant into support device or system whose failure to perform can the body or b support or sustain life or c whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can be effectiveness reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or This datasheet contains the design specifications for In Design product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design
6. mA lg 1 0 mA lc 50 mA Ip 5 0 mA lc 50 mA lg 5 0 mA SMALL SIGNAL CHARACTERISTICS Transition Frequency lc 10 MA Vc 10 V f 100 MHz Collector Base Collector Base Capacitance le 0 Vcs 5 0 V f 1 0 MHz 0 Vos 5 0 V f 1 0 MHz le 0 Vca 5 0V f 10MHz 40 E Base Capacitance lo 0 Ves 1 0 V f 1 0 MHz a 4 Storage Time o Time let Igo le 10 MA e i E On Time Vec 3 0 V lc 10 mA 12 Ip 3 0 MA Turn Off Time Vcc 3 0 V lc 10 mA 18 s1 3 0 mA Ibo 1 5mA Spice Model NPN Is 44 14f Xti 3 Eg 1 11 Vaf 100 Bf 78 32 Ne 1 389 Ise 91 95f Ikf 3498 Xtb 1 5 Br 12 69m Nc 2 Isc 0 Ikr 0 Ro 6 Cjc 2 83p Mjc 86 19m Vjc 75 Fo 5 Cje 4 5p Mje 2418 Vje 75 Tr 1 073u Tf 227 6p Itf 3 Vtf 4 Xtf 4 Rb 10 cSAS NPN Switching Transistor continued Typical Characteristics DC Current Gain Collector Emitter Saturation vs Collector Current Voltage vs Collector Current 8 o ia OV 9 h pe DC CURRENT GAIN 0 1 1 10 lc COLLECTOR CURRENT mA V cesar COLLECTOR EMITTER VOLTAGE V I COLLECTOR CURRENT mA Base Emitter Saturation Base Emitter ON Voltage vs Voltage vs Collector Current Collector Current EN 1 pa io 2 o
7. nee FAIRCHILD SEMICONDUCTOR m BSV52 SOT 23 Mark B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA Sourced from Process 21 Abso l ute Maxi mum Rati ng s TA 25 C unless otherwise noted Parameter Value Collector Emitter Voltage pooo o 2 O 12 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C 2 These are steady state limits The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics TA 25 C unless otherwise noted Total Device Dissipation a Device mounted on FR 4 PCB 40 mm X 40 mm X 1 5 mm 1997 Fairchild Semiconductor Corporation cSAS NPN Switching Transistor continued Electrical Characteristics TA 25 C unless otherwise noted OFF CHARACTERISTICS Collector Emitter Breakdown Voltage 10 mA lg Pte foo Collector Base Breakdown Voltage 10pA I 0 r Emitter Base Breakdown Emitter Base Breakdown Voltage le 100 pA Ip 0 50 eee Cutoff Current Vece 10 V IE 0 a Vcs 10 V le 0 Ta 125 C 5 0 ON CHARACTERISTICS DC Current Gain lo 1 0 MA Vo 1 0 V lc 10 mA Vo 1 0 V lco 50 mA Voe 1 0 V Vce sat Collector Emitter Saturation Voltage lc 10 mA Ig 0 3 mA lc 10

FAIRCHILD BSV52 NPN Switching Transistor handbook

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