FAIRCHILD MTD3055V Manual
Contents
1. August 1999 i 8 FAIRCHILD eS a eal SEMICONDUCTOR m MTD3055V N Channel Enhancement Mode Field Effect Transistor General Description Features This N Channel MOSFET has been designed specifically 12 A 60 V Roson 0 15 2 Veg 10 V to improve the overall efficiency of DC DC converters using either synchronous or conventional switching e Low gate charge PWM controllers e Fast switching speed These MOSFETs feature faster switching and lower e High performance technology for low Rog on gate charge than other MOSFETs with comparable Ro gon SPeCifications The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC DC power supply designs with higher overall efficiency TO 252 Absolute Maximum Ratings 1 lt 25 c uness otherwise noted Parameter Drain Source Voltage Gate Source Voltage Maximum Drain Current Continuous Note 1 Tc 100 C Note 1 Maximum Power Dissipation Tc 25 C Ta 25 C Ta 25 C Thermal Resistance Junction to Ambient Note 1a Package Marking and Ordering Information Device Marking Device ReelSize Tape width Quantity MTD3055V MTD3055V Die and manufacturing source subject to change without prior notification 1999 Fairchild Semiconductor Corporation MTD3055V Rev A ASSOCQLIN Electrical Characteristics To 26 C unless otherwise noted sn rome Tecor one DRAIN SOURCE AVALANCHE RATINGS2. body or b support or sustain life or c whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can be effectiveness reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or This datasheet contains the design specifications for In Design product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only
3. note 2 Single Pulse Drain Source Voo 25 V Ip 12A Avalanche Energ Maximum Drain Source Avalanche Current Drain Source Breakdown Voltage Ves 0 V Ip 250 pA Breakdown Voltage Temperature Ip 250 yA Referenced to 25 C Coefficient Zero Gate Voltage Drain Current Vos 60 V Ves O V Vos 60 V Ves 0 V Ty 150 C Gate Body Leakage Current Ves 20 V Vos 0 V Forward Gate Body Leakage Current Ves 20 V Vos 0 V Reverse On Characteristics Note 2 Vasih Gate Threshold Voltage Vos Ves Ip 250 pA AVestth Gate Threshold Voltage Ip 250 yA Referenced to 25 C ATs Temperature Coefficient Rosen Static Drain Source Ves 10 V Ib 6A On Resistance Vosvon Drain Source On Voltage Ves 10 V 12 A On Resistance Ves 10 ViIp 6 A Ty 150 C Forward Transconductance Vos 7 V Ip 6A 40 Input Capacitance Vos 25 V Ves 0 V Output Capacitance f 1 0 MHz Reverse Transfer Capacitance Characteristics Note 2 Turn On Delay Time Voo 30 V Ip 12 A Voltage Time Notes 1 Rg JA is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the drain tab Rosc is guaranteed by design while Roca is determined by the user s board design a Ro Ta 38 C W when mounted ona b Ray a7 96 C W when mounted ona L 1in2 pad of 20z copper minimuim pad Scale 1 1 on letter size paper 2 Pulse Test Pulse Width lt 300
4. us Duty C MTD3055V Rev A ASSOCQLIN TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FASTr PowerTrench SyncFET Bottomless GlobalOptoisolator QFET TinyLogic CoolFET GTO Qs UHC CROSSVOLT HiSeC QT Optoelectronics VCX DOME ISOPLANAR Quiet Series E CMOS MICROWIRE SILENT SWITCHER EnSigna OPTOLOGIC SMART START FACT OPTOPLANAR SuperSOT 3 FACT Quiet Series PACMAN SuperSOT 6 FAST POP SuperSOT 8 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which a are intended for surgical implant into support device or system whose failure to perform can the
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FAIRCHILD MTD3055V Manual