FAIRCHILD NDP6030PL/NDB6030PL Manual
Contents
1. 10 5000 p 30A y Vps 6V 3000 T 2000 24N s Cisse o 2 1000 Coss lt 5 a 2 500 e Css 300 f21MHz S Vas 20V 150 0 1 0 3 2 5 10 20 30 0 10 20 30 40 50 Vps DRAIN TO SOURCE VOLTAGE V Qy GATE CHARGE nC Figure 7 Gate Charge Characteristics Figure 8 Capacitance Characteristics 150 zi 7000 WT T TT T TTTTIT 100 S Ous ON et JO ias SINGLE PULSE 50 oe t S Roc 2 C W em is 5000 SE 30 S s c 25 C 4000 70m u 10 SSCS 700 3 5 3000 L Ves 4 5V Occ 3 gt 5 SINGLE PULSE 2000 I Rc 2 0 C W eJC 2 T 25 C 1990 0 m l L F i EE 8b 0 001 0 01 0 1 1 10 100 1 000 SINGLE PULSE TIME mS Vpg DRAIN SOURCE VOLTAGE V Figure 9 Maximum Safe Operating Area Figure 10 Single Pulse Maximum Power Dissipation i o Zz D 0 5 amp 05 En A 0 3 5 ReJc t r t Rouc T o2 Rouc 2 0 C W EN T amp 01 i T 0 05 P pk F y z M 0 02 2 US 3 0 03 22. a ae GERE FAIRCHILD Ae dene es Sa eee SEMICONDUCTOR m NDP6030PL NDB6030PL P Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P Channel logic level enhancement mode power field 30A 30 V Roson 0 042 0 Ves 4 5 V effect transistors are produced using Fairchild s proprietary Roson 0 025 O 9 Vgc 10 V high cell density DMOS technology This very high density S A d Critical DC electrical parameters specified at elevated process is especially tailored to minimize on state resistance temperature These devices are particularly suited for low voltage P applications such as DC DC converters and high efficiency Rugged internal source drain diode can eliminate the need Switching circuits where fast switching low in line power loss for an external Zener diode transient suppressor and resistance to transients are needed High density cell design for extremely low Rs m 175 C maximum junction temperature rating S G S5 TO 220 5 TO 263AB S NDP Series NDB Series 5 D Absolute Maximum Ratings T 25 C unless otherwise noted Symbol Parameter NDP6030PL NDB6030PL Units Voss Drain Source Voltage 30 V Voss Gate Source Voltage Continuous 16 V lp Drain Current Continuous 30 A Pulsed 90 P Total Power Dissipation T 25 C 75 Ww Derate above 25 C 0 5 Fs Operating and Storage Temperatur
3. 0 01 Ty To P Roye 0 X 0 02 C o E DAA T Sin e Pulse Duty Cycle D t t2 0 01 I es Vs SNAN L 1 L l I 0 01 005 04 0 5 1 5 10 50 100 500 1000 t4 TIME ms Figure 11 Transient Thermal Response Curve NDP6030PL Rev B1
4. ature 150 1 2 3 4 V S GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 175 Rps on NORMALIZED R bs oN ON RESISTANCE DRAIN SOURCE ON RESISTANCE 0 8 70 0 6 103 0 4 0 10 20 30 40 50 60 Ip DRAIN CURRENT A Figure 2 On Resistance Variation with Drain Current and Gate Voltage 0 12 0 1 0 08 0 06 0 04 0 02 0 2 4 6 8 10 Vos GATE TO SOURCE VOLTAGE V Figure 4 On Resistance Variation with Gate To Source Voltage 6 lt Vas OV 10 im EL cEIJ 125 C S 4 8 25 C z lt L g 10 1 55 C Lu amp 00 Lu 2 tu 0 0001 0 2 0 4 0 6 0 8 1 1 2 1 4 op BODY DIODE FORWARD VOLTAGE V Figure 6 Body Diode Forward Voltage Variation with Source Current and Temperature NDP6030PL Rev B1 Typical Electrical Characteristics continued Vas GATE SOURCE VOLTAGE V Ip DRAIN CURRENT A r t NORMALIZED EFFECTIVE
5. e Range 65 to 175 C Ty Maximum lead temperature for soldering purposes 275 C 1 8 from case for 5 seconds Taleg Operating and Storage Temperature Range 65 to 175 C THERMAL CHARACTERISTICS Ryc Thermal Resistance Junction to Case 2 C W Rya Thermal Resistance Junction to Ambient 62 5 C W 1997 Fairchild Semiconductor Corporation NDP6030PL Rev B1 Electrical Characteristics T 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVpss Drain Source Breakdown Voltage Ves 0 V lj 2 250 pA 30 V ABVps AT _ Breakdown Voltage Temp Coefficient 250 pA Referenced to 25 C 36 mV C loss Zero Gate Voltage Drain Current Vos 24 V Va 0 V 250 pA T 125 C 1 mA laser Gate Body Leakage Forward Veg 16 V V 0 V 100 nA laesa Gate Body Leakage Reverse Veg 16 V Vj 20V 100 nA ON CHARACTERISTICS note AV osn JAT Gate Threshold Voltage Temp Coefficient lj 250 pA Referenced to 25 C 2 2 mV C Vasi Gate Threshold Voltage Vos Veg Ip 250 pA 1 1 4 2 V T 125 C 0 8 1 08 1 6 Roson Static Drain Source On Resistance Veg 4 5 V 1 15A 0 037 0 042 Q T 125 C 0 053 0 075 Vas 7 10 V 2 19A 0 021 0 025 bien On State Drain Current Veg 4 5 V V 5 V 20 A Ors Forward Transc
6. onductance Vos 4 5 V lp 19A 20 S DYNAMIC CHARACTERISTICS C Input Capacitance Vos 7 15 V Vg 20V 1570 pF C Output Capacitance t O Mhz 975 pF Cs Reverse Transfer Capacitance 360 pF SWITCHING CHARACTERISTICS note toron Turn On Delay Time Voo 15 V Ip 5A 12 5 25 ns t Turn On Rise Time Vos 7 5 V Ren 6 Q 60 120 nS m Turn Off Delay Time 50 100 nS t Turn Off Fall Time 52 100 nS Q Total Gate Charge Vps 12 V 26 36 nC Q Gate Source Charge peed Ry ad 65 nc Qua Gate Drain Charge 11 5 nC DRAIN SOURCE DIODE CHARACTERISTICS ls Maximum Continuos Drain Source Diode Forward Current 30 A los Maximum Pulsed Drain Source Diode Forward Current 100 A Vaso Drain Source Diode Forward Voltage Veg 20V l 2 15 A Note 0 92 1 3 V t Reverse Recovery Time Veg 20V lp 30A 58 ns lr Reverse Recovery Current di at 100 Ais 1 5 A Note Pulse Test Pulse Width lt 300 us Duty Cycle lt 2 0 NDP6030PL Rev B1 Typical Electrical Characteristics R DS ON NORMALIZED Ip DRAIN SOURCE CURRENT A DRAIN SOURCE ON RESISTANCE OHMS D DRAIN CURRENT A 0 2 3 4 Vpg DRAIN SOURCE VOLTAGE V Figure 1 On Region Characteristics to lp 15A o Vas 4 5V hi o co o Lo a o m a 0 25 50 75 100 125 Tj JUNCTION TEMPERATURE C Figure 3 On Resistance Variation with Temper
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FAIRCHILD NDP6030PL/NDB6030PL Manual