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FAIRCHILD FQP7N80C/FQPF7N80C 800V N-Channel MOSFET handbook

1. p Drain Current A 10 10 10 Vig Drain Source Voltage V Figure 1 On Region Characteristics 40 Drain Current A Figure 3 On Resistance Variation vs Drain Current and Gate Voltage Vig Drain Source Voltage V Figure 5 Capacitance Characteristics 10 lt 2 9 e E 10 E 10 2 Veg Cate Source Voltage V Figure 2 Transfer Characteristics 10 E 3 S 8 10 i E AEN 2 2504 s Pulse Test 10 L I L 1 L 0 2 0 4 0 6 0 8 1 0 1 2 1 4 V Source Drain voltage V Figure 4 Body Diode Forward Voltage Variation with Source Current and Temperature 12 Vps 160V 19 Vos 400V Vps 640V Fa Vi a 3X Note 66A 0 L i L i 0 5 10 15 20 25 30 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4dO04 208NZdOH BV ps Normal Drain arc icona o 200 8 Typical Characteristics Continued Nomalized Source On Resistance R Drain Sou 0 50 100 T Junction Temperature C Figure 7 Breakdown Voltage Variation vs Temperature 10 Operation in This Area is Limited by Ru 10 T 3 10 6 10 Notes 1T 25 C 2T 150 C 3 Single Pulse 107 10 10 10 Ve Drain Source Volt
2. r FAIRCHILD SEMICONDUCTOR FQP7N80C FQPF7N80C 800V N Channel MOSFET General Description Features These N Channel enhancement mode power field effect minimize on state resistance provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode These devices are well suited for high efficiency switch mode power supplies transistors are produced using Fairchild s proprietary planar stripe DMOS technology This advanced technology has been especially tailored to e Fast switching Low Crss typical 10 pF 100 avalanche tested Improved dv dt capability QFET 6 6A 800V Rps on 1 90 Q Vas 10 V Low gate charge typical 27 nC D 1 e v 4 G TO 220 TO 220F os FQP Series eps FQPF Series e Absolute Maximum Ratings Tc 25 C unless otherwise noted Symbol Parameter FQP7N80C FQPF7N80C Units Vpss Drain Source Voltage 800 V Ip Drain Current Continuous Tc 25 C 6 6 6 6 A Continuous Tc 100 C 4 2 4 2 A IDM Drain Current Pulsed Note 1 26 4 26 4 A Vass Gate Source Voltage 30 V Eas Single Pulsed Avalanche Energy Note 2 580 mJ lar Avalanche Current Note 1 6 6 A Ear Repetitive Avalanche Energy Note 1 16 7 mJ dv dt Peak Diode Recovery dv dt Note 3 4 5 V ns Pp Power Dissipation Tc 25 C 167 56 W Derate above 25 C 1 33 0 44 WC Ty Tera Operati
3. Same Type as DUT 12V gt Charge Resistive Switching Test Circuit amp Waveforms 90 10 HA cm t on aa t off Unclamped Inductive Switching Test Circuit amp Waveforms F BVpss AS 2 79 BVsss Vi BVpss las lp t Vpp Vps t 2003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4d04 908NZd04 Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT Vpop e dv dt controlled by R Isp controlled by pulse period Gate Pulse Width Ves erect og ea ee aie regres E Gate Pulse Period Driver lem Body Diode Forward Current Isp DUT di dt la Body Diode Reverse Current Vos DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop 2003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4d04 D08NZd04 Package Dimensions TO 220 9 90 0 20 8 70 o e 3 s lt amp 93 60 0 10 Q v I i i i m i X 8 S amp eo ol 3 8 o O O N w T D lt O r gt o it 2 i A 3 J d Z i i N F 2 8 eo 1 27 0 10 2 1 52 0 10 co S Lu di 0 80 0 10 2 54TYP 2 54TYP 2 54 0 20 2 54 0 20 p 10 00 0 20 0 10 0 50 505 4 50 0 20 1 30 De 908NZdd0J4 908NZd04 2 40 0 20 Dimen
4. Transconductance Vps 50 V lp 3 3 A Note 4 5 5 Dynamic Characteristics Ciss Input Capacitance Vps 25 V Veg 0 V 1290 1680 pF Coss Output Capacitance f 1 0 MHz 120 155 pF Crss Reverse Transfer Capacitance 10 13 pF Switching Characteristics ta on Turn On Delay Time Vpp 400 V Ip 6 6 A 35 80 ns t Turn On Rise Time Rg 252 100 210 ns ld oft Turn Off Delay Time 50 110 ns t Turn Off Fall Time Note 4 5 T 60 130 ns Qg Total Gate Charge Vps 640 V Ip 6 6 A 2 27 35 nC Qgs Gate Source Charge Veg 10 V 8 2 nC Qga Gate Drain Charge Note 4 5 11 nC Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current 6 6 A Ism Maximum Pulsed Drain Source Diode Forward Current 26 4 A Vsp Drain Source Diode Forward Voltage Vas 0 V ls 6 6 A 1 4 V trr Reverse Recovery Time Ves 0 V ls 6 6 A 650 ns Qr Reverse Recovery Charge dle dt 100 A us Note 4 7 0 E uC Notes 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 25mH lag 6 6A Vpp 50V Rg 25 O Starting Tj 25 C 3 Isp lt 8A di dt lt 200A us Vpp lt BVpss Starting Ty 25 C 4 Pulse Test Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 2003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4d04 908NZd04 Typical Characteristics
5. notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only 2003 Fairchild Semiconductor Corporation Rev 12
6. PTOLOGIC SILENT SWITCHER VCX Programmable Active Droop OPTOPLANAR SMART START DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems 2 A critical component is any component of a life support which a are intended for surgical implant into the body device or system whose failure to perform can be or b support or sustain life or c whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system or to affect its safety or effectiveness provided in the labeling can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or In This datasheet contains the design specifications for Design product development Specifications may change in any manner without
7. age V Figure 9 1 Maximum Safe Operating Area for FQP7N80C D Ip Drain Current A N 75 100 T Case Temperature C Figure 10 Maximum Drain Current vs Case Temperature Figure 9 2 Maximum Safe Operating Area 3 0 25r 20r 15r 10r 05r d H H i H H 100 50 0 50 100 150 T Junction Temperature C Figure 8 On Resistance Variation vs Temperature 10 Operation in This Area is Limited by Rosy 10 A omm 2 E 10 E lt i DG a zi amp 10 X Notes 1T 25 C 2 T 150 C 3 Single Puse 10 10 10 10 Vig Drain Source Voltage V for FQPF7N80C 2003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4d04 908NZd04 Typical Characteristics continued t 0 75 T W Max 2 Duty Factor D t t 3 Tm To Pow Ze solt JM I LPL E Z A9 Thermal Response single pulse 10 107 10 10 107 10 10 t Square Wave Pulse Duration sec Figure 11 1 Transient Thermal Response Curve for FQP7N80C Z AD Thermal Response single pulse 10 10 10 10 107 10 10 t Square Wave Pulse Duration sec Figure 11 2 Transient Thermal Response Curve for FQPF7N80C 2003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4d04 D08NZd04 Gate Charge Test Circuit amp Waveform
8. ng and Storage Temperature Range 55 to 150 C T Maximum lead temperature for soldering purposes L 1 8 from case for 5 seconds 300 c Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP7N80C FQPF7N80C Units Roc Thermal Resistance Junction to Case 0 75 2 25 C W Ross Thermal Resistance Case to Sink Typ 0 5 C W RoJA Thermal Resistance Junction to Ambient 62 5 62 5 C W 2003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4d04 908NZd04 Electrical Characteristics 71 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V lp 250 uA 800 V ABVpss Breakdown Voltage Temperature 7 Ip 250 uA Referenced to 25 C i vie 1 AT Coefficient p a 0 93 dis Ipss Vps 800 V Vas 0 V 10 LA Zero Gate Voltage Drain Current Vos 640 V Te 125 C 7 100 WA lassrF Gate Body Leakage Current Forward Vas 30 V Vps 0 V 100 nA lassR Gate Body Leakage Current Reverse Vas 30 V Vps 0 V m 100 nA On Characteristics VGs th Gate Threshold Voltage Vps Ves lp 250 uA 3 0 m 5 0 Rps on Static Drain Source Ves 10 V Ip 3 3 A 1 Q On Resistance GS D 1 57 9 ges Forward
9. sions in Millimeters 2003 Fairchild Semiconductor Corporation Rev A April 2003 Package Dimensions Continued 10 16 0 20 93 18 0 10 2 54 0 20 S em 7 00 S 7 00 0 70 eo i Ex E o x eo H N Ed o Ex 3 1 00x45 5 eo LO MAX1 47 a F LO 0 80 0 10 o Q O zj 1 0 35 0 10 0 10 JL 0 50 505 2 76 0 20 2 54TYP 2 54TYP 2 54 0 20 2 54 0 20 a F 9 40 0 20 e N _ Y EI Dimensions in Millimeters 92003 Fairchild Semiconductor Corporation Rev A April 2003 908NZ4d04 908NZd04 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FACT ImpliedDisconnect PACMAN SPM ActiveArray FACT Quiet series ISOPLANAR POP Stealth Bottomless FAST LittleFET Power247 SuperSOT 3 CoolFET FASTr MicroFET PowerTrench SuperSOT 6 CROSSVOLT FRFET MicroPak QFET SuperSOT 8 DOME GlobalOptoisolator MICROWIRE Qs SyncFET EcoSPARK GTO MSX QT Optoelectronics TinyLogic E CMOS HiSeC MSXPro Quiet Series TruTranslation EnSigna JC TM OCX RapidConfigure UHC Across the board Around the world OCXPro RapidConnect UltraFET The Power Franchise ry O

FAIRCHILD FQP7N80C/FQPF7N80C 800V N-Channel MOSFET handbook

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