Home

FAIRCHILD FQP6N40CF 400V N-Channel MOSFET handbook

1. February 2012 FAIRCHILD FRFET FQP6N40CF FQPF6N40CF 400V N Channel MOSFET Features Description 6A 400V Rps on 1 1 2 Veg 10 V These N Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary planar stripe DMOS technology Low Crss typical 15pF This advanced technology has been especially tailored to minimize on state resistance provide superior switching performance and withstand high energy pulse in the avalanche Low gate charge typical 16nC Fast switching 100 avalanche tested and commutation mode These devices are well suited for high B efficiency switched mode power supplies electronic lamp Improved dv dt capability ballasts based on half bridge topology Fast recovery body diode typical 70ns oD o 4 X G GDS Dears GDS a S Absolute Maximum Ratings Symbol Parameter FQP6N40CF FQPF6N40CF Units Vpss Drain Source Voltage 400 V Ip Drain Current Continuous Tc 25 C 6 6 A Continuous Tc 100 C 3 6 3 6 A IDM Drain Current Pulsed Note 1 24 24 A Vess Gate Source Voltage 30 V Eas Single Pulsed Avalanche Energy Note 2 270 mJ lar Avalanche Current Note 1 6 A Ear Repetitive Avalanche Energy Note 1 73 mJ dv dt Peak Diode Recovery dv dt Note 3 20 Vins Pp Power Dissipation Tc 25
2. 4 Pulse Test Pulse width lt 300s Duty cycle lt 2 5 Essentially independent of operating temperature 2 www fairchildsemi com FQP6N40CF FQPF6N40CF Rev CO LAASOW Jeuueu N A00 320 N9ddOd J490rN9dOJH Typical Performance Characteristics Figure 1 On Region Characteristics a 10 0V 10 gov ERE as tee p 70V 1 T nh 65V ox 60V 55V Bottom 50V 10 E l Drain Current A Notes 1 250s Pulse Test 2 T 25 C 10 10 10 Vg Drain Source Voltage V Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 3 5 3 0 H Veg 10V 2 5 j 20r Ro ON el Drain Source On Resistance 15 Vas 20V 10 Note T 25 C 05 i i L 0 5 10 15 Drain Current A Figure 5 Capacitance Characteristics 1200 C shorted MSN Capacitances pF Vps Drain Source Voltage V 20 15 Reverse Drain Current A l Drain Current A Veg Gate Source Voltage V 10 i i i i i Figure 2 Transfer Characteristics 10 10 Notes 1 Vos 40V 2 250us Pulse Test 10 L 2 4 6 8 10 Vg Gate Source Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperatue 10 1 Notes 250 b VREO 2 250us Pulse Test 0 2 0 4 0 6 0 8 1 0 12 14 Vp Source Drain v
3. Gate Threshold Voltage Vos Ves lp 250 uA 2 0 4 0 V Rps on Static Drain Source Ves 10V 1p 2 3A 0 9 1 1 On Resistance 9rs Forward Transconductance Vps 40V 1p 2 3A Note 4 4 7 S Dynamic Characteristics Ciss Input Capacitance Vps 25 V Veg 0 V 480 625 pF Coss Output Capacitance De TE MIN 80 105 pF Criss Reverse Transfer Capacitance 15 20 pF Switching Characteristics ta on Turn On Delay Time Vpp 200 V Ip 6A 13 35 ns Turn On Rise Time Rete a 65 140 ns taioff Turn Off Delay Time 21 55 ns I Turn Off Fall Time Note4 5 38 85 ns Qg Total Gate Charge Vps 320 V Ip 6A 16 20 nC Qgs Gate Source Charge Vos 10V 2 3 nC Qga Gate Drain Charge Note 4 5 82 nC Drain Source Diode Characteristics and Maximum Ratings Is Maximum Continuous Drain Source Diode Forward Current 6 A Ism Maximum Pulsed Drain Source Diode Forward Current 2 24 A Vsp Drain Source Diode Forward Voltage Ves 0V Is 6A 1 4 V trr Reverse Recovery Time Ves OV ls 2 6A 70 ns Qr Reverse Recovery Charge Pipe spe eg os 0 12 uC Notes 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 13 7mH las 6A Vpp 50V Rg 25 Q Starting Ty 25 C 3 Isp lt 6A di dt lt 200A us Vpp lt BVpss Starting Ty 25 C
4. C 73 38 W Derate above 25 C 0 58 0 3 wc Ty Tste Operating and Storage Temperature Range 55 to 150 C TL Maximum lead temperature for soldering purposes 300 C 1 8 from case for 5 seconds Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP6N40CF FQPF6N40CF Units Rouc Thermal Resistance Junction to Case 1 71 3 31 C W Rocs Thermal Resistance Case to Sink 0 5 C W Roa Thermal Resistance Junction to Ambient 62 5 62 5 C W 2012 Fairchild Semiconductor Corporation 1 www fairchildsemi com FQP6N40CF FQPF6N40CF Rev CO LAASOW Jeuueu N ADOY ADOVN9AdD4 SDOVN9dDA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQP6N40CF FQP6N40CF TO 220 50 FQPF6N40CF FQPF6N40CF TO 220F 50 Electrical C haracteristics Tc 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V lp 250 pA 400 V ABVpss Breakdown Voltage Temperature Ip 250 pA Referenced to 25 C 0 54 vc AT Coefficient Ipss Zero Gate Voltage Drain Current Vps 400 V Veg 0 V 1 uA Vps 320 V Tc 125 C 10 pA lassrF Gate Body Leakage Current Forward Ves 30 V Vps 0 V 100 nA lessr Gate Body Leakage Current Reverse Ves 30 V Vps 0 V 100 nA On Characteristics Vesith
5. semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Pr
6. D4 SDOVN9dDA Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT e dv dt controlled by Ro Isp controlled by pulse period _ Gate Pulse Width V Mi Gate Pulse Period Driver lg Body Diode Forward Current Isp DUT di dt I Body Diode Reverse Current Vos DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop FQP6N40CF FQPF6N40CF Rev CO www fairchildsemi com LAASOW Jeuueu N ADOY ADOVN9AdO4 SDOVN9dDA Mechanical Dimensions A13 40 12 19 Dimensions in Millimeters FQP6N40CF FQPF6N40CF Rev CO www fairchildsemi com LAAISOW 24uUUeYD N A00 ADOVN9AdOD4s SDOVN9dOA Mechanical Dimensions ontinuea TO 220F 10 16 0 20 93 18 0 10 2 54 0 20 F 7 00 Q 7 00 0 70 m 1l l a F fe S F N S S eo S 1 00x45 i eo co i MAX1 47 amp F Lo 0 80 0 10 O d l 1 0 35 0 10 0 10 4 0 507005 _ 2 76 0 20 2 54TYP 2 54TYP 2 54 0 20 2 54 0 20 N Fi 9 40 0 20 S N EU i Y Dimensions in Millimeters FQP6N40CF FQPF6N40CF Rev CO www fairchildsemi com LAASOW J9euueu N AO00P 320 N9ddOd J90rN9dOJH FAIRCHILD aaa SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by F
7. ER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of
8. F Rev CO www fairchildsemi com LAASOW Jeuueu N ADOY ADOVN9AdD4 SDOVN9dDA Typical Performance Characteristics continuea Figure 11 1 ransient Thermal Response Curve for FQP6N40CF 10 o 7 c o a o L2 Notes g 1 Zsolt 1 71 C W Max 5 10 2 Duty Factor D t t 3 T Te Pom Aath g 3 N 107 i i A a ail i i isiat 10 g 10 10 107 t Square W ave Pulse Duration sec Figure 11 2 Transient Thermal Response Curve for FQPF6N40CF D 20 5 2 10 fe 0 2 a o e 0 1 Notes g 0 057777 1 Z jolt 3 31 C W Max g 453 2 Duty Factor DSt E 0 0277 5 E PEERS 9 Tac Te Pow Zasclt 0 01 f A iat Try n uir ET TS n SCIL ALL INE N td single pulse eH eCPPHM com LU 10 UERHI issil idaiul 1 ii caaal i a 10 10 10 10 107 10 10 ts Square W ave Pulse Duration sec FQP6N40CF FQPF6N40CF Rev CO www fairchildsemi com LAASOW Jeuueu N AO00P ADOVN9AdO4 SDOVN9dDA Gate Charge Test Circuit amp Waveform Same Type as DUT Charge Resistive Switching Test Circuit amp Waveforms Vos 10 Vos Ec EIS Unclamped Inductive Switching Test Circuit amp Waveforms 1 BV pss E Lk 4414 44 44 9 2 7 BVps Yoo BV pss las lp b Yoo Vos D a t Tire 6 www fairchildsemi com FQP6N40CF FQPF6N40CF Rev CO LAASOW 24uUeYD N ADOY ADOVN9AdO
9. airchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool F PFS PowerTrench The Power Franchise AccuPower FRFET PowerxXS the AX CAP Global Power Resource M Programmable Active Droop p we BitSic Green Bridge QFET v iapthise mu Build it Now Green FPS as SUCI CorePLUS Green FPS e Series Quiet Series In CIC CorePOWER Gmax RapidConfigure TinyLogic M TM TM RA IneliMAX C TINYOPTO Current Transfer Logic ISOPLANAR Saving our world 1mW W kW at a time ea DEUXPEED Marking Small Speakers Sound Louder SignalWise TIME Dual Cool and Better SmartMax ce EcoSPARK MegaBuck SMART START TriFault Detect EfficentMax MICROCOUPLER Solutions for Your Success x ESBC MicroFET SPMS an z MicroPak STEALTH uy MicroPak2 SuperFET Fairchild MillerDrive SuperSOT 3 a Fairchild Semiconductor MotionMax SuperSOT 6 toe FACT Quiet Series Motion SPM SuperSOT 8 Ultra FRFET FACT mWSaver SupreMOS UniFET FAST OptoHiT SyncFET VOXN FastvCore OPTOLOGIC Sync Lock VisualMax FETBench OPTOPLANAR system dle gorii FlashWriter GENERAL or FPS Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTH
10. oduct Status Definition Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later Preliminary First Production date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor The datasheet is for reference information only Rev 161 10 www fairchildsemi com FQP6N40CF FQPF6N40CF Rev CO LAASOW I9euueu N ADDY ADOVN94d04 SDOVN9dDA
11. oltage V Figure 6 Gate Charge Characteristics Note 6A 0 i i i 0 5 10 15 20 Q Total Gate Charge nC FQP6N40CF FQPF6N40CF Rev CO www fairchildsemi com LAASOW Jeuueu N A00 ADOVN9AdOD4 SDOVN9dDA Typical Performance Characteristics continuea Figure 7 Breakdown Voltage Variation BV 5g Normalized Drain Source Breakdown Voltage Drain Current A Ib 0 9 vs Temperature 50 0 50 T Junction Temperature C Maximum Safe Operating Area for FQP6N40CF Operation in This Area 1 i is Limited by R DS on i Notes 1 T 25 C 2 T 450 C 3 SingePuse 10 Vps Drain Source Voltage V 10 Figure 10 Maximum Drain Current Drain Current A vs Case Temperature 25 50 75 T Case Temperature C 125 150 Rosony Normalized Drain Source On Resistance a T 1j Drain Current A Figure 8 On Resistance Variation 30 vs Temperature 2 5 j 2 0 H 0 5 H Notes 1 Vg 10V 2 4 73A T Junction Temperature C 200 Figure 9 2 Maximum Safe Operating Area for FQPF6N40CF Operation in This Area is Limited by R poe EE 1 7 25 C 2 T 150 C 3 Single Pulse 10 10 Vg Drain Source Voltage V FQP6N40CF FQPF6N40C

FAIRCHILD FQP6N40CF 400V N-Channel MOSFET handbook

Contents

Download Pdf Manuals

Related Search

Related Contents