FAIRCHILD FQP47P06 60V P-Channel MOSFET Manual
Contents
1. 300 Thermal Characteristics Symbol Parameter Rejc Thermal Resistance Junction to Case Recs Thermal Resistance Case to Sink Rosa Thermal Resistance Junction to Ambient 2001 Fairchild Semiconductor Corporation Rev A2 May 2001 90dZtdOJ Elerical Characteristics Tc 25 C unless otherwise noted 3 Isp 47A 4 Pulse Test di dt lt 300A us Vpp lt BVpss Starting Ty 25 C Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 0 43mH las 47A Vpp 25V Re 25 Q Starting Ty 25 C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Vas 0 V Ip 250 uA 60 V ABVpss Breakdown Voltage Temperature lp 250 uA Referenced to 25 C 0 vie AT Coefficient D j 0 06 Be Ipss Vps 60 V Vag 0 V H 4 uA Zero Gate Voltage Drain Current Vos 48 V Tc 150 C A0 uA lassF Gate Body Leakage Current Forward Vas 25 V Vps 0 V 100 nA lassR Gate Body Leakage Current Reverse Vas 25 V Vps 0 V 100 nA On Characteristics Vas th Gate Threshold Voltage Vps Vas2. any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only 2001 Fairchild Semiconductor Corporation Rev H2
3. FAIRCHILD May 2001 Lp c SEMICONDUCTOR QFET FQP47P06 60V P Channel MOSFET General Description Features These P Channel enhancement mode power field effect 47A 60V Rps on 0 0260 9 Vas 10 V transistors are produced using Fairchild s proprietary Low gate charge typical 84 nC planar stripe DMOS technology Low Crss typical 320 pF This advanced technology has been especially tailored to Fast switching minimize on state resistance provide superior switching 100 avalanche tested performance and withstand a high energy pulse in the Improved dv dt capability avalanche and commutation modes These devices are 175 C maximum junction temperature rating well suited for low voltage applications such as automotive DC DC converters and high efficiency switching for power management in portable and battery operated products Ds TO 220 FQP Series Absolute Maxi mum Ratings Tc 25 C unless otherwise noted Symbol Parameter FQP47P06 Voss Drain Source Voltage 60 lp Drain Current Continuous Tc 25 C 47 Continuous Tc 100 C 33 2 IDM Drain Current Pulsed 188 Gate Source Voltage 25 Single Pulsed Avalanche Energy 820 Avalanche Current 47 Repetitive Avalanche Energy 16 Peak Diode Recovery dv dt 7 0 Power Dissipation Tc 25 C 160 Derate above 25 C 1 06 Operating and Storage Temperature Range 55 to 175 Maximum lead temperature for soldering purposes 1 8 from case for 5 seconds
4. lp 250 pA 2 0 4 0 RDs on Static Drain Source Ves 10 V Ip 23 5 A 021 02 Q On Resistance Gs i Oe nate JFS Forward Transconductance Vps 30 V Ip 23 5 A Note 4 21 Dynamic Characteristics Ciss Input Capacitance Vps 25 V Vas 0 V 2800 3600 pF Coss Output Capacitance f 1 0 MHz 1300 1700 pF Cras Reverse Transfer Capacitance 320 420 pF Switching Characteristics ld on Turn On Delay Time Vpp 30 V Ip 23 5 A 50 110 ns t Turn On Rise Time Rg 250 450 910 ns ld oft Turn Off Delay Time 100 210 ns lr Turn Off Fall Time Note 4 5 195 400 ns Qy Total Gate Charge Vps 48 V Ip 47 A 84 110 nC Qgs Gate Source Charge Vas 10 V 18 nC Qga Gate Drain Charge Note 4 5 44 nC Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current 47 A Ism Maximum Pulsed Drain Source Diode Forward Current 188 A Vsp Drain Source Diode Forward Voltage Ves 0 V lg 47 A 4 0 V trr Reverse Recovery Time Ves 0 V la 47 A 130 xs ns Qr Reverse Recovery Charge dle dt 100 A us Note 4 0 55 uC Notes 2001 Fairchild Semiconductor Corporation Rev A2 May 2001 90dZtdOJ Capacitance pF Typical Characteristics Ves gt Top 150V PPS nov gt sevk Todi i 7 0V sov E mec 55V i 5 Pu F i E tT 5 1
5. 0 10 10 10 Vps Drain Source Voltage V Figure 9 Maximum Safe Operating Area Typical Characteristics coe 12 amp 14h gS E 5 1 0 Pr d g 5 z Ema amp d 08 i i i i i 100 50 0 50 100 150 200 Roson Normalized Drain Source On Resistance Ip Drain Current A 25 20r 15r 10r 05r 3 Notes 1 Vs 10V 2 1 285A m i i i i i 100 50 0 50 100 150 200 T Junction Temperature C Figure 8 On Resistance Variation vs Temperature 50 0 i i i i i 25 50 75 100 125 150 175 T Case Temperature C Figure 10 Maximum Drain Current vs Case Temperature Notes Z solt 0 94 C W Max Duty Factor D t t Z oft Thermal Response Tac Te Pou Za solt 10 10 107 10 t Square Wave Pulse Duration sec Figure 11 Transient Thermal Response Curve 92001 Fairchild Semiconductor Corporation Rev A2 May 2001 90dZtdOJ Gate Charge Test Circuit amp Waveform Resistive Switching Test Circuit amp Waveforms Charge Vos t 92001 Fairchild Semiconductor Corporation Rev A2 May 2001 90dZtdOJ Peak Diode Recovery dv dt Test Circuit amp Waveforms Compliment of DUT N Channel e dv dt controlled by Ra Isp controlled by pulse period Gate Pulse Width Vop Body Diode Forward Voltage Drop B
6. 0 s S 5 i 3 Notes o 1 250u s Pulse Test 1 2 T 250 dull 10 10 10 Vps Drain Source Voltage V Figure 1 On Region Characteristics 0 10 0 08 8 P 9 a g 0 06 i I T E ool B to T 0 02 X Note T 25C 0 00 i i i 0 100 200 300 400 lp Drain Current A Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 1 Cys Cy shorted os Yoa Vps Drain Source Voltage V Figure 5 Capacitance Characteristics lor Reverse Drain Current A V cs Gate Source Voltage V 10 E 10 E t E1750 5 F amp F S 25 C o wt E H L X Notes F 1 Vas 30V H 2 2504 s Pulse Test 10 i i i 4 6 8 10 Vos Gate Source Voltage V Figure 2 Transfer Characteristics Vsp Source Drain Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature X Note 47 A 10 2 30 4 5 6 7 8 9 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2001 Fairchild Semiconductor Corporation Rev A2 May 2001 90dZtdOJ T Junction Temperature C Figure 7 Breakdown Voltage Variation vs Temperature 10 z I Operation in This Area is Limited by R ase lp Drain Current A 10 E 3X Notes E 1 T 25 C F 2 T 175 C F 3 Single Pulse 1
7. E UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or In This datasheet contains the design specifications for Design product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at
8. ody Diode Recovery dv dt Vas oo SOR oscar sme ds Gate Pulse Period Driver l Body Diode Reverse Current SD DUT lkm di dt lzm Body Diode Forward Current Vps Vsp DUT 92001 Fairchild Semiconductor Corporation Rev A2 May 2001 90dZtdOJ Mechanical Dimensions ou Rc 13 40 12 19 Dimensions in Millimeters 2001 Fairchild Semiconductor Corporation Rev A2 May 2001 90dZtdOJ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FAST OPTOPLANAR SuperSOT 3 Bottomless FASTr PACMAN SuperSOT 6 CoolFET FRFET POP SuperSOT 8 CROSSVOLT GlobalOptoisolator PowerTrench SyncFET DenseTrench GTO QFET TinyLogic DOME HiSeC Qs UHC EcoSPARK ISOPLANAR QT Optoelectronics UltraFET E CMOS LittleFET Quiet Series VCX EnSigna MicroFET SLIENT SWITCHER FACT MICROWIRE SMART START FACT Quiet Series OPTOLOGIC Stealth DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENS
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FAIRCHILD FQP47P06 60V P Channel MOSFET Manual