ON NTP75N03L09 NTB75N03L09 Power MOSFET 75 Amps 30 Volts N Channel TO 220 D2 PAK handbook
Contents
1. 25 Tj JUNCTION TEMPERATURE C 50 75 100 125 Rps on DRAIN TO SOURCE RESISTANCE NORMALIZED Figure 5 On Resistance Variation Temperature 150 O 0 009 2 5 D 0 008 tc 0 007 z 2 0 006 E 2 amp 0 005 E 9 0 004 ff 0 20 40 60 80 100 120 Ip DRAIN CURRENT AMPS Figure 4 On Resistance vs Drain Current and Gate Voltage 1000 Vas 0 Ty 125 C 100 5 Ty 100 lt 10 N N 1 5 10 15 20 25 30 Vps DRAIN TO SOURCE VOLTAGE VOLTS Figure 6 Drain to Source Leakage Current vs Voltage http onsemi com 4 75 031 09 75 031 09 12000 _ 10 30 gt 10000 g lt H Vas S8000 9 Vos 20 6 gt lt 6000 QT 9 9 4 Q1 Qo 4000 10 n o ee Ip 75A 2000 E 5s 25 0 90 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25 0 10 20 30 40 50 60 GATE2. Time Gate Charge Vas 5 0 Vac Ip 75 Adc Vps 24 Vdc Note 2 SOURCE DRAIN DIODE CHARACTERISTICS Forward On Voltage Is 75 Adc Vas 0 Vdc 15 75 Adc Vas 0 Vdc Ty 125 C Note 2 Reverse Recovery Time Note 4 Ig 75 Adc Vas 0 dlg dt 100 A us Note 2 Reverse Recovery Stored Charge Note 4 2 Pulse Test Pulse Width lt 300 uS Duty Cycle x 2 3 Switching characteristics are independent of operating junction temperatures 4 From characterization test data http onsemi com 3 NTP75N03L09 75 031 09 120 Vas 4V E Vas 4 5V Ves 3 5V 2 90 Vas 5 Vas 6 V 2 Vas 28V 60 Ves 10V 2 Vas 3 z lt c 30 Ty 25 E Vas 2 5 V 0 0 0 2 04 06 08 1 12 1 4 1 6 1 8 2 22 24 26 Vps DRAIN TO SOURCE VOLTAGE VOLTS Figure 1 On Region Characteristics 120 Ip DRAIN CURRENT AMPS 0 5 1 1 5 2 2 5 3 3 5 Vag GATE TO SOURCE VOLTAGE VOLTS 4 Figure 2 Transfer Characteristics Rps on DRAIN TO SOURCE RESISTANCE 2 10 20 30 40 50 60 70 80 90 100 120 Ip DRAIN CURRENT AMPS Figure 3 On Resistance vs Drain Current and Temperature T T Vag 5 0 V Ip 37 5 A
3. 035 0 64 0 88 F 0142 0147 361 313 G 0095 0105 242 266 0 110 0 155 280 393 J 0018 0 025 046 064 K 0500 0562 1270 1427 R L 0045 0460 1 15 1 52 N 0190 0210 483 533 J 0100 0120 254 304 0080 0110 204 279 S 0045 0055 115 139 T 0235 0255 597 647 u 0 000 0050 0 00 127 0045 115 z 0080 204 STYLE 5 PIN1 GATE 2 DRAIN 3 SOURCE 4 DRAIN http onsemi com 6 75 031 09 75 031 09 PACKAGE DIMENSIONS D PAK CASE 418AA 01 ISSUE O NOTES 1 DIMENSIONING AND TOLERANCING E PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH V LEE 5 MILLIMETERS DIM MIN MAX MIN MAX 0 340 0 380 8 64 9 65 0 380 0 405 9 65 10 29 C 0 160 0 190 4 06 4 83 A D 0 020 0 036 0 51 0 92 5 E 0 045 0 055 1 14 1 40 0310 7 87 G 0 100BSC 2 54 BSC J 0 018 0 025 0 46 0 64 T K K 0 090 0 110 229 279 SEATING cms 0 280 7 11 S 0 575 0 625 14 60 15 88 c J v 0 045 0 055 1 14 1 40 STYLE 2 D 3PL PIN 1 GATE 2 DRAIN eo 0 13 0 005 00 T B 10 3 SOURCE 4 DRAIN SOLDERING FOOTPRINT SCALE 3 1 additional information on our Pb Fre
4. 2389 NTB75NO3LOO E hy fS NTP75NO3LO9 NTB75NO3L09 Power MOSFET 75 Amps 30 Volts N Channel TO 220 and D2PAK This Logic Level Vertical Power MOSFET is a general purpose part that provides the best of design available today in a low cost power package Avalanche energy issues make this part an ideal design in The drain to source diode has a ideal fast but soft recovery Features Pb Free Packages are Available Ultra Low Rpsvon Single Base Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits Ipss and Vps on Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC Rated Class 1 MM Class B CDM Class 0 Typical Applications Power Supplies Inductive Loads PWM Motor Controls Replaces MTP75NO3HDL MTB75NO3HDL in Many Applications Semiconductor Components Industries LLC 2004 1 August 2004 Rev 6 ON Semiconductor http onsemi com 75 AMPERES 30 VOLTS Rps on 8 mQ N Channel D MARKING DIAGRAMS TO 220 CASE 221A STYLE 5 D PAK 75N03L09 CASE 418AA PORN 2 STYLE 2 ain Gate Source 75NO3LO9 Device Code A Assembly Location Y Year WW Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet Publication Order Number NTP75N03L09 D 75 031 09 75 031 09 MAXIMUM RATI
5. NGS T 25 C unless otherwise noted Drain to Source Voltage Vdc Drain to Gate Voltage RGS 10 Gate to Source Voltage Continuous Non repetitive tp lt 10 ms Drain Current Continuous Tc 25 Continuous 9 Tc 100 C Single Pulse tp lt 10 us Total Power Dissipation Tc 25 C Derate above 25 C Total Power Dissipation 25 C Note 1 2 5 Operating and Storage Temperature Range 55 to 150 Single Pulse Drain to Source Avalanche Energy Starting Ty 25 C Eas 1500 38 Vdc Vas 10 Vdc L 1 mH lj pk 55 A Vps 40 Vdc Thermal Resistance Junction to Case 1 0 C W Junction to Ambient Rea 62 5 Junction to Ambient Note 1 Rosa 50 Maximum Lead Temperature for Soldering Purposes 1 8 from case for 10 seconds Maximum ratings are those values beyond which device damage can occur Maximum ratings applied to the device are individual stress limit values not normal operating conditions and are not valid simultaneously If these limits are exceeded device functional operation is not implied damage may occur and reliability may be affected 1 When surface mounted to an FR4 board using the minimum recommended pad size ORDERING INFORMATION Pb Free NTB75NO3L09G D PAK 50 Units Rail Pb Free NTB75NO3L09T4 D PAK 800 Tape amp Reel TFor information on tape and reel specifications including part orientation and tape size
6. TO SOURCE OR DRAIN TO SOURCE Qg TOTAL GATE CHARGE nC VOLTAGE VOLTS Figure 7 Capacitance Variation Figure 8 Gate to Source and Drain to Source Voltage vs Total Charge 1000 1 tr 2 x 2 t gt 100 E la otf 2 ld on 4 Ty 25 15 75 Vas 5V 10 D GS 0 1 2 2 4 7 6 2 9 1 10 20 0 0 0 2 0 4 0 6 0 8 1 0 Rg GATE RESISTANCE 9 Vsp SOURCE TO DRAIN VOLTAGE VOLTS Figure 9 Resistive Switching Time Variation Figure 10 Diode Forward Voltage vs Current vs Gate Resistance LLI 1600 ES Q 1400 75 x 1200 1000 Z q 800 ll 509 600 az 400 22 o 200 T 0 25 50 75 100 125 150 Ty STARTING JUNCTION TEMPERATURE Figure 11 Maximum Avalanche Energy vs Starting Junction Temperature http onsemi com 5 75 031 09 75 031 09 PACKAGE DIMENSIONS TO 220 CASE 221 09 ISSUE AA NOTES 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH 1 5 3 DIMENSION 2 DEFINES ZONE WHERE ALL mm BODY AND LEAD IRREGULARITIES ARE ALLOWED Y INCHES MILLIMETERS piM MIN MAX MIN 20570 0 620 1448 1575 u B 0380 0405 9 66 1028 C 0160 0 190 407 482 D 0 025 0
7. ase or use SCILLC products for any such unintended or unauthorized application Buyer shall indemnify and hold SCILLC and its officers employees subsidiaries affiliates and distributors harmless against all claims costs damages and expenses and reasonable attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized use even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part SCILLC is an Equal Opportunity Affirmative Action Employer This literature is subject to all applicable copyright laws and is not for resale in any manner PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT N American Technical Support 800 282 9855 Toll Free ON Semiconductor Website http onsemi com Literature Distribution Center for ON Semiconductor USA Canada P O Box 61312 Phoenix Arizona 85082 1312 USA Order Literature http www onsemi com litorder Phone 480 829 7710 or 800 344 3860 Toll Free USA Canada Japan ON Semiconductor Japan Customer Focus Center TE Fax 480 829 7709 or 800 344 3867 Toll Free USA Canada 2 9 1 Kamimeguro Meguro ku Tokyo Japan 153 0051 For additional information please contact your Email orderlit onsemi com Phone 81 3 5773 3850 local Sales Representative NTP75N03L09 D
8. e strategy and soldering details please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual SOLDERRM D http onsemi com 7 75 031 09 75 031 09 ON Semiconductor and im are registered trademarks of Semiconductor Components Industries LLC SCILLC reserves the right to make changes without further notice to any products herein SCILLC makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does SCILLC assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation special consequential or incidental damages Typical parameters which may be provided in SCILLC data sheets and or specifications can and do vary in different applications and actual performance may vary over time All operating parameters including Typicals must be validated for each customer application by customer s technical experts SCILLC does not convey any license under its patent rights nor the rights of others SCILLC products are not designed intended or authorized for use as components in systems intended for surgical implant into the body or other applications intended to support or sustain life or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur Should Buyer purch
9. s please refer to our Tape and Reel Packaging Specifications Brochure BRD8011 D http onsemi com 2 75 031 09 75 031 09 ELECTRICAL CHARACTERISTICS T4 25 unless otherwise noted Soe we ww OFF CHARACTERISTICS Drain Source Breakdown Voltage Note 2 V BR DsS Ves 0 Vac Ip 250 uAdc 30 34 Vde Temperature Coefficient Negative 57 mv C Zero Gate Voltage Drain Current Ipss uAdc Vps 30 Vas 0 Vdc 1 0 30 Ves 0 Ty 150 C 10 ON CHARACTERISTICS Note 2 Gate Threshold Voltage Note 2 Vas h Vps Vas Ip 250 uAdc 1 0 1 6 2 0 Vdc DS VGS ID Hu s Threshold Temperature Coefficient Negative 6 mv C Static Drain to Source On Resistance Note 2 Rps on Vas 5 0 Ip 37 5 6 5 Static Drain to Source Resistance Note 2 VDs on Vdc Vas 10 Ip 75 Adc 0 52 0 68 Vas 10 Vdc Ip 37 5 Adc Ty 125 C 0 35 0 50 Forward Transconductance Notes 2 amp 4 Vps 3 Vac Ip 20 Adc as 5 DYNAMIC CHARACTERISTICS Note 4 Input Capacitance Cs 4398 5656 pF Output Capacitance Vos nx Cos 1160 1894 Transfer Capacitance 57 SWITCHING CHARACTERISTICS Notes 3 amp 4 Turn On Delay Time Vas 5 0 Vac Rise Time Vpp 20 lp 75 Adc Turn Off Delay Time Re 4 7 Note 2 Fall
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ON NTP75N03L09 NTB75N03L09 Power MOSFET 75 Amps 30 Volts N Channel TO 220 D2 PAK handbook