Microsemi LAWRENCE 2N7368 handbook
Contents
1. 5 182N 7368A N v B3 oy Microsemi P UEGMCWECKR ISO GEHE TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL PRF 19500 622 Devices Qualified Level JAN 2N7368 JANTX JANTXV MAXIMUM RATINGS otal Power Dissipation Tc 25 C Operating amp Storage Junction Temperature Range 65 to 200 THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction to Case 1 Derate linearly 0 657 W C for Tc gt 25 C See appendix A for package outline ELECTRICAL CHARACTERISTICS T 25 C unless otherwise noted OFF CHARACTERISTICS emen om E vee Ic 0 2 Adc VcEO sus Vdc Collector Emitter Cutoff Current L l1 lu Las Vcg 70 Vdc Icgs 1 0 mAdc Collector Emitter Cutoff Current 1L douane Vcg 80 Vdc VBE 1 5 Vdc Icgx 1 0 mAdc Emitter Base Cutoff Current ae ee VEB 7 0 Vdc IgBo 1 0 mAdc 6 Lake Street Lawrence MA 01841 120101 1 800 446 1158 978 794 1666 Fax 978 689 0803 Page 1 of 2 2N7368 JAN SERIES ELECTRICAL CHARACTERISTICS con t Characteristics ON CHARACTERISTICS Forward Current Transfer Ratio Ic 1 0 Adc Vcg 2 0 Vdc hfg 50 175 Ic 3 0 Adc Vcg 2 0 Vdc 30 140 Collector Emitter Saturation Voltage I eee ee Ic 5 0 Adc Ig 0 5 Adc VCE sat 1 0 Vdc Base Emitter Saturation Voltage cl lel Ic 5 0 Adc Ip 0 5 Adc VBE sat 1 5 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small Signal Short Circuit2. Forward Current Transfer Ratio Ic 0 5 Adc Vcg 10 Vdc f 1 0 MHz Output Capacitance Vcp 10 Vdc Ig 0 100 kHz f 1 0 MHz C abo SAFE OPERATING AREA DC Tests Tc 25 C 1 Cycle t 2 1 0 s Test 1 VCE els Vdc Ic 10 Adc Test 2 VCE 45 Vdc Ic 2 5 Adc Test 3 VCE 60 Vdc Ic 0 9 Adc 2 Pulse Test Pulse Width 300us Duty Cycle lt 2 0 6 Lake Street Lawrence MA 01841 120101 1 800 446 1158 978 794 1666 Fax 978 689 0803 Page 2 of 2
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Microsemi LAWRENCE 2N7368 handbook