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FAIRCHILD FDT86246 N-Channel Power Trench MOSFET handbook

1. 500 Ciss 100 Coss 10 Criss f 21MHz Vas 0V 1 0 1 1 10 100 Vps DRAIN TO SOURCE VOLTAGE V Figure8 Capacitancevs Drain to Source Voltage 5 x 4 L z Vas z 10 V Eg o 5 Ves 6V q 2 tc a a 1 Rojc 12 C W 0 25 50 75 100 125 150 Te CASE TEMPERATURE CC Figure 10 Makimum Continuous Drain Current vs Case Temperature 300 PERETI T T TTTTTIT T T TTTT SINGLE PULSE 100 Roja 118 C W TA 225 C 10 1 03 o 10 10 10 1 10 100 1000 t PULSE WIDTH sec Figure 12 Single Pulse Maximum Power Dissipation www fairchildsemi com LAASOW 494941 J9Mog SUUBYJ N 9v698104 Typical Characteristics 1 25 c unless otherwise noted
2. DUTY CYCLE DESCENDING ORDER 1 2 D 05 S x 02 c 3 0 1 LL N gt E ui 0 05 r ag o1 002 Pom N 0 01 2 u ta t a Oo to gt SINGLE PULSE 5 NOTES Roya 118 C W DUTY FACTOR D t tp 0 01 PEAK Ty Ppy X Zoua X Roja TA 0 005 10 10 10 10 1 10 100 1000 t RECTANGULAR PULSE DURATION sec Figure 13 Junction to Ambient Transient Thermal Response Curve 2010 Fairchild Semiconductor Corporation 5 www fairchildsemi com FDT86246 Rev C LAASOW 494941 J9Mog JSUUEYO N 97c98 L04 SS FAIRCHILD Wi SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks AccuPower F PFS PowerTrench The Power Franchise Auto SPM FRFET PowerxS The Right Technology for Your Success Build it Now Global Power Resource Programmable Active Droop ine CorePLUS Green FPS QFET p wer CorePOWER Green FPS e Series QS EE i CROSSVOLT Gmax Quiet Series ME EO GTLE M GTO RapidConfigure eae Current Transfer Logic IntelliMAX c TM C ic DEUXPEED ISOPLANAR VOS GU Dual Cool MegaBuck Saving our world 1mW W kW at a time TinyPower EcoSPARK M
3. 2010 Fairchild Semiconductor Corporation FDT86246 Rev C Www fairchildsemi com LAASOW 494941 19M0d jJ9uuEUu N 9v 698104 Electrical Characteristics T 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250 uA Ves 20 V 150 V AR em vollage Temperature Ip 250 LA referenced to 25 C 104 mV C Ipss Zero Gate Voltage Drain Current Vps 120 V Veg 2 0V 1 uA less Gate to Source Leakage Current Ves 20 V Vps 0 V 100 nA On Characteristics Vasith Gate to Source Threshold Voltage Ves Vps lp 250 HA 2 0 3 1 4 0 V DES AA hs no Vollage Ip 250 uA referenced to 25 C 9 mV C Vas 10V lp22A 194 236 DS on Static Drain to Source On Resistance Vas 26V lp2 1 7A 231 329 ma Ves 10 V lp22A Ty 125 C 349 425 JFS Forward Transconductance Vps 10V Ip 2A 5 S Dynamic Characteristics Ciss Input Capacitance 161 215 pF one Output Capacitance Mee ie YOST ON 21 30 pF Cias Reverse Transfer Capacitance 1 6 5 pF Rg Gate Resistance 0 9 Q Switching Characteristics ta on Turn On Delay Time 7 8 16 ns tr Rise Time Vpp 275 V Ip 2 2A 2 9 10 ns la off Turn Off Delay Time
4. 25 c unless otherwise noted 10 S p 2A LLI Vpp 50 V 2 8 H O Vpp 75 V gt u 6 O Vpp 100 V O o0 4 O LT lt 2 o YA o gt 0 0 0 0 5 1 0 1 5 2 0 2 5 3 0 Qg GATE CHARGE nC Figure 7 Gate Charge Characteristics 9 LL tc tc 2 O L I o Ei lt gt lt E 1 0 001 0 01 0 1 1 tay TIME IN AVALANCHE ms Figure9 Unclamped Inductive Switching Capability 10 poo UN s ALL Nu NT x T angini n BSA gt S ER 100 us N SS Lu x DN q hy oc NN gt III o bi v h 1ms z THIS AREA IS SUNS TTA p x STN Z o4 LIMITED BY rps on SIDS TSL INi ms q V ON s 100 ms cc SINGLE PULSE CoM e Ty MAX RATED SCUOLA s a H 3 ATTY z Roja 118 C W ar sl 10s 0 01 Ta 25 C Tx DG 0 005 0 1 1 10 100 500 Vps DRAIN to SOURCE VOLTAGE V Figure 11 Forward Bias Safe Operating Area 2010 Fairchild Semiconductor Corporation FDT86246 Rev C P pio PEAK TRANSIENT POWER W CAPACITANCE pF
5. 0 4 75 50 25 0 25 50 75 100 125 150 Tj JUNCTION TEMPERATURE C Figure 3 Normalized On Resistance vs Junction Temperature 8 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX q 6 Vps 5 V Lu E 5 4 O z Tj 2 259C oc a 2 A 0 2 3 4 5 6 7 Ves GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 2010 Fairchild Semiconductor Corporation 3 FDT86246 Rev C NORMALIZED DRAIN TO SOURCE ON RESISTANCE DS on DRAIN TO SOURCE ON RESISTANCE mo iA e e Is REVERSE DRAIN CURRENT A PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 2 Ip DRAIN CURRENT A 4 6 8 Figure2 Normalized On Resistance vs Drain Current and Gate Voltage 800 ID 2A PULSE DURATION 80 us DUTY CYCLE 0 5 MAX Ty 125 9C Ty 25 C 4 6 8 10 Vas GATE TO SOURCE VOLTAGE V Figure 4 On Resistance vs Gate to Source Voltage 10 Ves 0V 1 Tj 150 C 0 1 Ty 25 C 0 01 Ty 55 C 0 001 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Current www fairchildsemi com LAASOW 494941 Jowog SUUBYJ N 9v698104 Typical Characteristics 1
6. Ves 10 V Reen 6 Q 4 6 10 ns lr Fall Time 1 2 10 ns Qg ToT Total Gate Charge 2 9 4 nc Qaror Total Gate Charge Vas 0 Vto5V Mn oe E 1 7 3 Qgs Total Gate Charge oa 0 9 nC Qod Gate to Drain Miller Charge 0 8 nC Drain Source Diode Characteristics Vsp Source to Drain Diode Forward Voltage Vgs 0V Ils 2A Note 2 0 84 1 3 V ly Reverse Recovery Time l 2 A di dt 100 A us 44 71 ns Qu Reverse Recovery Charge 31 49 nC NOTES 1 Roja is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1 5 x 1 5 in board of FR 4 material Rec is guaranteed by design while Rgca is determined by the user s board design a 55 C W when mounted on a LAASOW 494941 19MO0d J9uuEU N 97698104 b 118 C W when mounted on 1 in pad of 20z copper a minimum pad of 2 oz copper o 00000 00000 00000 2 Pulse Test Pulse Width 300 us Duty cycle 2 0 3 Starting Ty 25 C N ch L 1 0 mH las 4 0 A Vpp 135 V Veg 10 V 2010 Fairchild Semiconductor Corporation 2 www fairchildsemi com FDT86246 Rev C Typical Characteristics T 25 c unless otherwise noted Ip DRAIN CURRENT A NORMALIZED DRAIN TO SOURCE ON RESISTANCE 8 6 4 2 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 0 1 2 3 4 5 Vps DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 2 4 Ip 2A Ves z 10 V 2 0 1 6 1 2 0 8
7. AA FAIRCHILD DS SEMICONDUCTOR FDT86246 N Channel Power Trench MOSFET 150 V 2 A 236 mO Features B Max rps on 236 MQ at Veg 10V 1p 2 2A B Max rps on 329 MQ at Vas 6 V lp 1 7 A m High performance trench technology for extremely low rpsyon B High power and current handling capability in a widely used surface mount package WB Fast switching speed B 100 UIL Tested B RoHS Compliant SOT 223 December 2010 General Description This N Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has DS on been optimized for switching performance and ruggedness Applications B Load Switch B Primary Switch MOSFET Maximum Ratings T 25 C unless otherwise noted Thermal Characteristics Thermal Resistance Junction to Case Symbol Parameter Ratings Units Vps Drain to Source Voltage 150 V Vas Gate to Source Voltage 20 V Drain Current Continuous Note 1a 2 A i Pulsed 8 Eas Single Pulse Avalanche Energy Note 3 8 mJ p Power Dissipation Note 1a 2 2 w B Power Dissipation Note 1b 1 0 Ty TsrG Operating and Storage Junction Temperature Range 55 to 4150 C moen 2 C W Roja Thermal Resistance Junction to Ambient Note 1a 55 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 86246 FDT86246 SOT 223 13 12 mm 2500 units
8. ICROCOUPLER SignalWise oie EfficentWax MicroFET SmartMax LAPIS ESBC MicroPak SMART START Tr y MicroPak2 spy riFault Detect M T MillerDrive STEALTH oa Fairchild MotionMax SuperFET 7 m Fairchild Semiconductor Motion SPM SuperSOT 3 MZA FACT Quiet Series OptiHiT SuperSOT 6 mers Sia FACT OPTOLOGIC SuperSOT 8 UHC FAST OPTOPLANAR SupreMOS Ultra FRFET FastvCore j SyncFET eue FETBench Sync Lock ve VisualMax FlashWriter PDP SPM SYSTEM XS FPSIM Power SPM GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems whi
9. ch a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild direc
10. he datasheet is for reference information only 2010 Fairchild Semiconductor Corporation 6 www fairchildsemi com FDT86246 Rev C Rev 151 LAASOW 494941 JoMog JSUUEYO N 9vc98104
11. tly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later Preliminary First Production date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TM Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design i Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Notin Producjion Semiconductor T

FAIRCHILD FDT86246 N-Channel Power Trench MOSFET handbook

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