FAIRCHILD FDS89161LZ Manual
Contents
1. 1000 tc 100 O ou H Z V c 10 5 Kata SINGLE PULSE lt q T 2 Roya 135 C W x o a 1 T 235 C 0 5 4 3 2 1 2 3 10 10 10 10 1 10 10 10 t PULSE WIDTH sec Figure 13 Single Pulse Maximum Power Dissipation 2 i DUTY CYCLE DESCENDING ORDER l Sc 3 D 0 5 y wN 01 0 2 E ui 01 Pom a z 005 N 5 Na 00 l 0 01 to S SINGLE PULSE NOTES 5 DUTY FACTOR D t t Roya 135 C W PEAK Ty Ppy X Zoua X Rogan TA 0 001 10 10 10 10 1 10 100 1000 t RECTANGULAR PULSE DURATION sec Figure 14 Junction to Ambient Transient Thermal Response Curve 2011 Fairchild Semiconductor Corporation 5 www fairchildsemi com FDS89162. VisualMax ue SYSTEM XST FlashWriter PDP SPM GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of t
3. Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS89161LZ FDS89161LZ SO 8 13 12mm 2500 units 2011 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDS89161LZ Rev C4 LAASOW 4 U9u941 19MOg JBUUBYD N ENG Z1 F9L 68SQ03 Electrical Characteristics 1 25 c unless otherwise noted Symbol Parameter _Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250 HA Veg O V 100 V BENDSSE Pea cow Nollad gt me mpeniile lp 250 pA referenced to 25 C 68 mV C ATy Coefficient loss Zero Gate Voltage Drain Current Vps 80 V Ves 0 V 1 uA less Gate to Source Leakage Current Ves 20 V Vps 2 0 V 10 uA On Characteristics Vasith Gate to Source Threshold Voltage Vas Vps lp 250 uA 1 1 7 2 2 V EBXGSU Oeo ROUES TI e enONG volage Ip 250 uA referenced to 25 C 6 mV C ATJ Temperature Coefficient Vas 10 V Ip 2 7 A 81 105 DS on Static Drain to Source On Resistance Ves 4 5 V Ip 2 1 A 110 160 mt Vas 2 10V Ip 2 7A Tj 125 C 140 182 grs Forward Transconductance Vps 10V Ip 2 7A 7 8 S Dynamic Characteristics Cus Input Capacitance 227 302 pF Caz Output Capacitance o
4. is Vx ge Du 44 58 pF Ghee Reverse Transfer Capacitance 3 4 pF Rg Gate Resistance 0 9 Q Switching Characteristics ta on Turn On Delay Time 3 8 10 ns t Rise Time Vpp 50 V Ip 2 7 A 1 2 10 ns ta off Turn Off Delay Time Vas 10 V Reen 6 2 9 5 17 ns lr Fall Time 1 6 10 ns Qo TOT Total Gate Charge Ves 0 Vto 10V 3 8 5 3 nC QJ TOT Total Gate Charge Vas 0Vto5V Vpp 50 V 2 1 2 9 nC Qgs Gate to Source Charge lp 2 7 A 0 7 nC Quod Gate to Drain Miller Charge 0 7 nC Drain Source Diode Characteristics Mu Vas 0 V ls 22 7 A Note 2 0 8 1 3 Vsp Source to Drain Diode Forward Voltage Ves 0V ls 2A Note 2 0 8 15 V ter Reverse Recovery Time lc 2 7 A di dt 100 A us 0 1 91 956 ms j Qi Reverse Recovery Charge 20 36 nC NOTES 1 RgjA is determined with the device mounted on a 1in pad 2 oz copper pad on a 1 5 x 1 5 in board of FR 4 material RaJc is guaranteed by design while Roca is determined by the user s board design a 78 C W when mounted on a 1 in pad of 2 oz copper b 135 C W when mounted on a minimun pad 2 5888 2 Pulse Test Pulse Width lt 300us Duty cycle lt 2 0 3 Starting TJ 25 C L 0 3 mH IAS 25 A VDD 27 V VGS 10V 4 The diode connected between gate and source serves only as protection against ESD No gate overvoltage rating is implied 2011 Fairchild Semiconductor Corporation 2 www fairchildsemi com FDS89161LZ Rev C4 LAASOW 4 U9u94 19MOg JSUUBYD N ENG Z1 F9L68SQ03
5. 1LZ Rev C4 LAASOW 4 U9u94 19MOg JSUUBYD N ENG Z1 F9L68SQ03 ae FAIRCHILD E SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks AccuPower FPS Power SPM The Power Franchise Auto SPM F PFS PowerTrench The Right Technology for Your Success AX CAP FRFET PowerXS the BitSiC Global Power Resource M Programmable Active Droop wer Build it Now Green FPS QFET vr apthise y CorePLUS Green FPS e Series QS m D CorePOWER Gmax Quiet Series EC CROSSVOLT GTO RapidConfigure ME a CTL IntelliMAX TM M pisce C TINYOPTO Current Transfer Logic ISOPLANAR TinyPower DEUXPEED MegaBuck Saving our world 1mW W kW at a time aa ey ale Dual Cool MICROCOUPLER SignalWise RAUM EcoSPARK MicroFET M SmartMax ka iei EfficentMax MicroPak SMART START TriFault Detect ESBC MicroPak2 SPM TRUECURRENT MillerDrive STEALTH SerDes MotionMax SuperFET ae Fairchild Motion SPM SuperSOT 3 yz Fairchild Semiconductor mWSaver SuperSOT 6 Fives FACT Quiet Series OptiHiT SuperSOT 8 Sue FACT OPTOLOGIC SupreMOS Ultra FRFET FAST OPTOPLANAR SyncFET UniFET E TM VCX FastvCore Sync Lock FETBench
6. A FAIRCHILD DS SEMICONDUCTOR FDS89161LZ June 2011 Dual N Channel PowerTrench MOSFET 100 V 2 7 A 105 mo Features B Max DS on 105 mQ at Vas 10 V Ip 2 7A B Max DS on 160 mQ at Vas 4 5 V Ip 2 1A m High performance trench technology for extremely low rps on B High power and current handling capability in a widely used surface mount package B CDM ESD protection level 2KV typical Note 4 B 100 UIL Tested B RoHS Compliant SO 8 General Description This N Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process that has been special tailored to minimize the on state resisitance and yet maintain superior switching performance G S zener has been added to enhance ESD voltage level Application B DC DC conversion MOSFET Maximum Ratings T 25 c unless otherwise noted Symbol Parameter Ratings Units Vos Drain to Source Voltage 100 V Ves Gate to Source Voltage 20 V Drain Current Continuous 2 7 A a Pulsed 15 EAS Single Pulse Avalanche Energy Note 3 13 mJ p Power Dissipation Te 225 C 31 W 9 Power Dissipation TA 25 C Note1a 1 6 Ty TsrG Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Royce Thermal Resistance Junction to Case Note 1 4 0 CAN Roa Thermal Resistance Junction to Ambient Note 1a 78
7. LTAGE V Figure4 On Resistance vs Gate to Source Voltage 20 10 Ves 20V 0 1 0 01 Ty 55 C 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Current www fairchildsemi com LAASOW 4 U9u94 19MOg JSUUBYD N ENG Z1 F9L68SQ03 Typical Characteristics N Channel 1 25 c unless otherwise noted Ves GATE TO SOURCE VOLTAGE V 0 1 2 3 5 Qg GATE CHARGE nC Figure 7 Gate Charge Characteristics 3 0 T LLI tc tc 2 O LLI I o lt lt gt lt 7 E 0 01 0 1 1 2 tay TIME IN AVALANCHE ms Figure9 UnclampediInductive Switching Capability 10 19 _ Yos 0V gt 10 tc tc 2 10 u Ty 1259C Z 10 T uj 10 Tj2259C E 10 S z 10 10 0 5 10 15 2 235 3 35 Figure 11 Gate Leakage Current vs Vas GATE TO SOURCE VOLTAGE V Gate to So
8. Typical Characteristics N Channel T 25 C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON RESISTANCE Ip DRAIN CURRENT A lj DRAIN CURRENT A 15 12 9 6 3 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 0 1 2 3 4 5 Vic DRAIN TO SOURCE VOLTAGE V DS Figure 1 On Region Characteristics 2 0 1 8 1 6 1 4 1 2 1 0 0 8 0 6 75 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure3 Normalized On Resistance vs Junction Temperature 15 12 Vps 50 V PULSE DURATION 80 us 6 DUTY CYCLE 0 5 MAX 3 55 C 0 0 2 4 6 8 10 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 2011 Fairchild Semiconductor Corporation FDS89161LZ Rev C4 NORMALIZED DRAIN TO SOURCE ON RESISTANCE Is REVERSE DRAIN CURRENT A DS on DRAIN TO SOURCE ON RESISTANCE mo 0 001 4 3 2 1 E a Ve 38V Ves 10V PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 0 3 6 9 12 15 Ip DRAIN CURRENT A Figure2 Normalized On Resistance vs Drain Current and Gate Voltage 500 i 274 PULSE DURATION 80 us EDT DUTY CYCLE 0 5 MAX 400 300 Ty 125 C 200 100 Ty 25 C 0 2 4 6 8 10 Vas GATE TO SOURCE VO
9. he user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild
10. is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later Preliminary First Production date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TM Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed Ful ereduetion make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor The datasheet is for reference information only 2011 Fairchild Semiconductor Corporation 6 www fairchildsemi com FDS89161LZ Rev C4 LAASOW 4 U9u94 19MOg 9UUEQU2 N ENG Z1 F9L68SQ03
11. urce Voltage 2011 Fairchild Semiconductor Corporation FDS89161LZ Rev C4 400 N Ciss 100 T 2 Lu 9 Coss lt Q 10 ou lt O f 1MHz Ves 0V Crss 1 biu al 0 1 1 10 100 Vps DRAIN TO SOURCE VOLTAGE V Figure8 Capacitancevs Drain to Source Voltage 4 T E 3 m Vas 10 V tc 2 O 2 zZ q Ves 6V a B 1 Roya 78 C W 0 25 50 75 100 125 150 T Ambient TEMPERATURE C Figure 10 Maximum Continuous Drain Current vs Ambient Temperature T H LL tc THIS AREA IS INUS NS T 10 ms LIMITED BY rps on ss Isl TN 041 RIEN 100 ms A SINGLE PULSE Seer 6 Ty MAX RATED ISCN s Roya 135 C W gos 0 01 Ta 25 C DC 0 005 E pos ep li e S 0 1 1 10 100 400 Vps DRAIN to SOURCE VOLTAGE V Figure 12 Forward Bias Safe Operating Area www fairchildsemi com LAASOW 4 U9u94 19MOg UULEYI N lengd Z1L9L68SqA Typical Characteristics N Channel T 25 c unless otherwise noted
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FAIRCHILD FDS89161LZ Manual