FAIRCHILD FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET handbook
Contents
1. 0 4 8 12 Q GATE CHARGE nC Vps DRAIN TO SOURCE VOLTAGE V Figure 7 Gate Charge Characteristics Figure 8 Capacitance Characteristics He HTHIT TTT SINGLE PULSE Resa 135 C W Rosiow LIMIT 100Hs m 40 ES 25 C gT 10 ims E 10ms L 100ms E 30 er 1s 2 1 o 10s Z z DC 20 tc x a lt 601 Ves 10V a SINGLE PULSE c 10 L Roya 135 C W Ta 25 C 0 01 0 0 1 1 10 100 0 001 0 01 0 1 1 10 100 1000 Vps DRAIN SOURCE VOLTAGE V t TIME sec Figure 9 Maximum Safe Operating Area Figure 10 Single Pulse Maximum Power Dissipation um i 9 s lt D 0 5 E o 02 Realt r t Roua Ud gi 2d Roya 135 C W LL cc pum 0 05 ac Co P pk N E HHH oo PK ar Ff ETH 0 01 tet oS 0 01 d t m cre g SINGLE PULSE 29 Ts Ta P Rogalt eZ Duty Cy2. Electrical Characteristics TA 25 C unless otherwise noted s mbo Test Contions mn Typ max un Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current i ie Es A Vsp Ves 0V ls 1 3A Note2 EN i V tr i i lk 7 5 A dr d 100 A us nS Qi nC Notes 1 R is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of 0JA the drain pins R c is guaranteed by design while R a is determined by the user s board design 0JC ay CD ye a 78 C W when b 125 C W when B c 135 C W when mounted on a mounted on a I mounted on a 02 in minimum pad 0 5 in pad of 2 oz BER pad of 2 oz copper Ir copper Jos P Scale 1 1 on letter size paper 2 Pulse Test Pulse Width 300us Duty Cycle 2 0 FDS6911 Rev C1 www fairchildsemi com 134SOIN 4U2U91L19MOd 949 21bo Jaouueu2 N IENA LL69SQJ Typical Characteristics 20 Vas 10 0V 3 5V 16 lt x 4 5V 4 0V Gi W 12 3 0V tc 2 o Z z 8 tc a 4 0 0 0 25 0 5 0 75 1 1 25 1 5 Vps DRAIN SOURCE VOLTAGE V Figure 1 On Region Characteristics 1 6 Lu o Z 1 4 22 Nw a T12 Z Z O uL zo 2a i c2 So ao Zz 0 8 a 0 6 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure 3 On Resistance Variation with Te
3. SPM ZZ IC MicroPak2 STEALTH anes Fairchild MillerDrive SuperFET UHC Fairchild Semiconductor MotionMax SuperSOT 3 ra estes FACT Quiet Series Motion SPM SuperSOT 6 UniFET FACT mWSaver SuperSOT 8 VOX FAST OptoHiT SupreMOS VisualMax FastvCor sili OPTOLOGIC SyncFET VoltagePlus FETBench OPTOPLANAR Sync Lock XS FlashWriter SYSTEM I GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly use
4. and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TEM Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete NOLIN ProgUeHon Semiconductor The datasheet is for reference information only First Production Rev 160 LAASOW U2u91 49MOg 9A9 9100 SOUUEQU N end FL 69SQ3
5. cle D t t i E 0 001 E eI 0 0001 0 001 0 01 0 1 1 10 100 1000 t TIME sec Figure 11 Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design FDS6911 Rev C1 www fairchildsemi com LAASOW U92U91 49MOg 9A9 IDO 9OuUEQU N end FEEL6e9SQa a apne FAIRCHILD DRET SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool FPS The Power Franchise AccuPower F PFS the Auto SPM FRFET PowerTrench p wer AX CAP Global Power Resource M PowerXS sp ranchisa Bitsic GreenBridge Programmable Active Droop T M Build it Now Green FPS QFET TC CorePLUS Green FPS e Series Gs IRIS jc CorePOWER Gmax Quiet Series TINYO TOi CROSSVOLT GTO RapidConfigure l m CTL IntelliMAX eM Uis Current Transfer Logic ISOPLANAR 72 M Lu DEUXPEED Marking Small Speakers Sound Louder Saving our world 1mW W kW at a time Teco Dual Cool and Better SignalWise TriFault Detect EcoSPARK MegaBuck SmartMax SESS HRENT EfficentMax M MICROCOUPLER SMART START SerDes ESBC MicroFET Solutions for Your Success MicroPak
6. d in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing
7. dsemi com LAASOWN U92U91 49MOdg 9A9 91D07 9UUEQU N eENd FEE6e9SQ3 Electrical Characteristics T4 25 C unless otherwise noted S mbo Test Contions min Typ max Unt Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0V Ip 250 uA 20 V ABVpss Breakdown Voltage Temperature lp 250 uA Referenced to 25 C 28 mV C AT Coefficient loss Zero Gate Voltage Drain Current Vos 20V Ves O0V 1 uA Vos 20 V Ves 0 V Ty 55 C 10 lass Gate Source Leakage Ves 20 V Vps 0V 200 nA On Characteristics Note 2 Gate Threshold Voltage Vos Ves lb 250 pA AV sith Gate Threshold Voltage lb 250 uA Referenced to 25 C 4 7 AT Temperature Coefficient Static Drain Source Ves 210V Ip 7 5A 10 6 13 On Resistance Vas 4 5 V 1p 26 5A 13 17 Ves 10 V lp 7 5 A Ty 125 C 14 5 20 On State Drain Current Ves 10V Vos 5V 20 f Forward Transconductance Vos 5V p27 5A Dynamic Characteristics Input Capacitance Vos 15V Vaes 0 V Output Capacitance f 1 0 MHz Switching Characteristics Note 2 talon Turn On Delay Time Vpp 15V p 14A ns t Turn On Rise Time Ves 10V Roeen 60 ns la ott Turn Off Delay Time ns t Turn Off Fall Time ns QgtoT Total Gate Charge at Vgs 10V nC Qy Total Gate Charge at Vgs 5V Vbo 15V lb 7 5A nC Qs Gate Source Charge nC Qaa Gate Drain Charge nC FDS6911 Rev C1 www fairchildsemi com LIASON 42u31 L19MOd 949 21bo jouUeYD N IENA LL69SQJ
8. mperature T Z Lu tc tc 2 O Z tc a 1 5 2 2 5 3 3 5 4 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics FDS6911 Rev C1 2 6 Lu O 2 2 a ul amp 5 Ww a 1 8 Z gu za 1 4 52 a O oD Z tc a 0 6 0 4 8 12 16 20 Ip DRAIN CURRENT A Figure 2 On Resistance Variation with Drain Current and Gate Voltage 0 04 o o Co 0 02 rps on ON RESISTANCE OHM e o TA 25 C 2 4 6 8 10 Ves GATE TO SOURCE VOLTAGE V Figure 4 On Resistance Variation with Gate to Source Voltage Vas OV ls REVERSE DRAIN CURRENT A o 0 0 2 0 4 0 6 0 8 1 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure 6 Body Diode Forward Voltage Variation with Source Current and Temperature www fairchildsemi com LAASOW U92U91 49MOg 9 9 91ID07 9UUEQU N Jen Q ELEL6e9SQ3 Typical Characteristics 1400 f 1MHz 1200 p ELTE en F Ciss 1000 CAPACITANCE pF Vas GATE SOURCE VOLTAGE V 16 20 0 5 10 15 20 25 30
9. si FAIRCHICD I SEMICONDUCTOR FDS6911 December 2011 Dual N Channel Logic Level PowerTrench MOSFET 20V 7 5A 13mO General Description These N Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance These devices are well suited for low voltage and battery powered applications where low in line power loss and fast switching are required SO 8 D i Es Pin 1 dd Features B ps on 18 MQ 9 Vas 10 V Ds on 17 mQ Vas 45V B Fast switching speed B Low gate charge B High performance trench technology for extremely low Hps oN B High power and current handling capability Absolute Maximu m Ratings TA 25 C unless otherwise noted Symbol ho lt Voss Drain Source Voltage Vass Gate Source Voltage 20 V Ip Drain Current Continuous Note 1a Pulsed 20 Pp Power Dissipation for Single Operation Note 1a W Note 1b l N ojo Ci e gt Note 1c Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Rosa Thermal Resistance Junction to Ambient Note 1a C W Rouc Thermal Resistance Junction to Case Note 1 C W Package Marking and Ordering Information Ty Tere 2011 Fairchild Semiconductor Corporation FDS6911 Rev C1 www fairchil
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FAIRCHILD FDS6911 Dual N Channel Logic Level PowerTrench MOSFET handbook