VISHAY BUD742 Manual
Contents
1. 3 12 K W L 12 5 K W e S 10 z E S amp D ZB 5 1 x Ic lt fna lt 0 5 x Ic A 1 oO ka 5 VCcEsat 2V S 25 K W cal g 50 K W E CG 01 o Pei o Y z Rinya 135 K W 0 01 g A 0 001 0 100 200 300 400 500 600 0 25 50 75 100 125 150 13706 Vcg Collector Emitter Voltage V 95 10499 Tease Case Temperature C Figure 4 Vcgw Diagram Figure 7 Ptot vs Tcase 10 00 o SD 8 P o lt z Z 8 S S 1 00 E 5A E 5 3A o E 2A 5 S 0 10 1A E z Ic 0 5A S Z 0 01 0 12 3 45 6 7 8 9 10 I gt 0 01 0 10 1 00 10 00 13708 Vcg Collector Emitter Voltage V 13709 Ig Base Current A Figure 5 Ic vs VCE Figure 8 VcEsat vs IB 100 100 o o C E amp E E E S S E 10V E d 10 d 10 Q Q a 5V a EE ke 5 Vce 2V 5 am jam g p A 1 a 1 0 01 0 10 1 00 10 00 0 01 0 10 1 00 10 00 13710 Ic Collector Current A 13711 Ic Collector Current A Figure 6 hfg vs lc Figure 9 hfg vs le Document Number 86532 www vishay de e FaxBack 1 408 970 5600 Rev 1 20 Jan 99 5 9 BUD742 Vishay Telefunken saturated switching R loa2. 6 6 0 15 5 35 0 15 2 30 1 7 E ER ci x v ux c pa E SS i D Hn dr zi 1 J Ui 0 5 has LTE 0 25 0 8 0 1 u 4 5 nom 3 7 0 13201 1 0 15 Plastic case JEDEC TO 252 E S Collector connected with metallic surface T SUMMA For ordering TO 252 add SMD to the type number i e BUD742 SMD www vishay de e FaxBack 1 408 970 5600 Document Number 86532 Rev 1 20 Jan 99 8 9 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1 Meet all present and future national and international statutory requirements 2 Regularly and continuously improve the performance of our products processes distribution and operating systems with respect to their impact on the health and safety of our employees and the public as well as their impact on the environment It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ODSs The Montreal Protocol 1987 and its London Amendments 1990 intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressing for an earlier ban on these substances Vishay Semiconductor GmbH has been able to use its policy of continuous im
3. 2 0 3 us Turn on time lc 2 5 A Ip 0 5 A ton 0 3 0 4 us Storage time lga 1 3 A Vg 250 V ts 1 1 3 us Fall time lr 0 1 0 15 us Inductive load figure 3 Storage time lc 0 8 A Ip 0 2 A Igo 0 4 A ts 1 5 2 us Fall time Vclamp 300 V L 200 uH ty 0 15 0 2 us Storage time lc 2 5 Alau 0 5 A po 1 3 A ts 1 1 3 us Fall time Vclamp 300 V L 200 uH ty 0 05 0 1 us 94 8863 3 Pulses tp T 0 1 t 10 ms Figure 1 Test circuit for V BR CEO Imeasure V BR CEO Document Number 86532 Rev 1 20 Jan 99 www vishay de e FaxBack 1 408 970 5600 3 9 BUD742 Vishay Telefunken 94 8852 4 Ig Ig 0 _CI _ I Rc B2 Y Ic p T d E CO N Ic Igi K Vcg z Vcc Ig 0 9 Ic V Rg VBB Bb 0 1 Ic lon 1 Fast electronic switch Figure 2 Test circuit for switching characteristics resistive load 94 8853 L Ip Igi 0 t Ip2 1 4 Ic In Ip 0 9 Ic Rg TRR 0 1 Ic t 1 Fast electronic switch e dy tr 2 Fast recovery rectifier Figure 3 Test circuit for switching characteristics inductive load Document Number 86532 www vishay de e FaxBack 1 408 970 5600 Rev 1 20 Jan 99 4 9 BUD742 iy VISHAY Vishay Telefunken Typical Characteristics Tease 25 C unless otherwise specified 100
4. ABU D 742 D7 TS WEN Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features e Simple sWitch Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA e 100 kHz switching rate 6 High reverse voltage Very low switching losses Applications Electronic lamp ballast circuits Switch mode power supplies 2 94 8965 3 94 8964 BUD742 1 Base 2 Collector 3 Emitter BUD742 SMD 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Tease 25 C unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector emitter voltage VcEo 400 V VcEw 550 V VcEs 900 V Emitter base voltage VEBO 11 V Collector current lc 5 A Collector peak current lcM 7 5 A Base current Ip 2 5 A Base peak current IBM 4 A Total power dissipation Tease 25 C Prot 40 W Junction temperature Tj 150 C Storage temperature range Tstg 65 to 4150 C Document Number 86532 www vishay de e FaxBack 1 408 970 5600 Rev 1 20 Jan 99 1 9 BUD742 Vishay Telefunken Maximum Thermal Resistance Tease 25 C unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction case Rihuc 3 12 K W Electrical Characteristics Tease 25 C unless otherwise specified Parameter Test
5. Conditions Symbol Min Typ Max Unit Collector cut off current Vcg 900 V ICES 10 uA Vce 900 V Tease 150 C ICES 200 uA Collector emitter lc 500 mA L 125 mH V BR cEo 400 V breakdown voltage figure 1 Imeasure 100 mA Emitter base lg 2 1 mA V BR EBO 11 V breakdown voltage Collector emitter lc 0 8 A Ig 0 2 A VCEsat 0 2 V saturation voltage lc 2 5 A Ig 0 8 A VCEsat 0 4 V Base emitter saturation voltage lc 0 8 A Ig 0 2 A VBEsat 1 V lc 2 5 A lg 0 8 A VBEsat 1 2 V DC forward current Vce 2 V Ic 10 mA hFE 15 transfer ratio Vce 2 V Ic 0 8 A hee 15 Vce 2 V Ic 225A hFE 7 Vcg22Vilc 25A hFE 4 Collector emitter Vs 50 V L 1 mH l 2 5 A Vcew 500 V working voltage lg1 0 5 A lg2 0 5 A VBkE ott 5 V Dynamic saturation voltage lc 2 5A lp 0 5A t 1 us VCEsatdyn 7 12 V lc 2 5 A Ig 0 5 A t 3 us VCEsatdyn 1 5 3 V Gain bandwidth product Ic 200 mA Veg 10 V fr 4 MHz f21MHz www vishay de e FaxBack 1 408 970 5600 2 9 Document Number 86532 Rev 1 20 Jan 99 BUD742 iy VISHAY Switching Characteristics Tease 25 C unless otherwise specified Vishay Telefunken Parameter Test Conditions Symbol Min Typ Max Unit Resistive load figure 2 Turn on time lc 0 8 A Ip 0 2 A ton 0 1 0 2 US Storage time lg2 0 4 A Vg 250 V ts 1 5 2 us Fall time t 0
6. d m Ic 0 8A Ig 2 0 1A o E E o0 En bei S a l Tease 25 C 13712 Ip Ipi Figure 10 ts vs Ip2 lp4 saturated switching R load Es lc 0 8A Igi 0 2A o E E o En bei S a 13714 Ip Ig Figure 11 ts vs Ipo lp1 0 5 0 4 saturated switching R load Ic 0 8A Ip 0 1A 0 3 0 2 Le Fall Time us 0 1 13713 Ip y Ig Figure 12 t vs lg2 lg1 saturated switching R load Ic 0 8A Ip 0 2A 0 4 Tease 125 C t Fall Time us 13715 Ip lgi Figure 13 t vs lg2 lg1 www vishay de e FaxBack 1 408 970 5600 6 9 Document Number 86532 Rev 1 20 Jan 99 Vishay Telefunken Dimensions in mm 6 6 0 15 5 354015 EI 3 0 1 a 0 5 0 05 Y A E L CX oo C Di E i L 40 4 0 8 0 1 0 5 0 05 2 28 nom 1 0 15 technical drawings Plastic case JEDEC TO 251 Seeche DIN Collector connected with metallic surface 14202 Specifications Document Number 86532 www vishay de e FaxBack 1 408 970 5600 Rev 1 20 Jan 99 7 9 BUD742 Vishay Telefunken
7. provements to eliminate the use of ODSs listed in the following documents 1 Annex A B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 Class and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency EPA in the USA 3 Council Decision 88 540 EEC and 91 690 EEC Annex A B and C transitional substances respectively Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances We reserve the right to make changes to improve technical design and may do so without further notice Parameters can vary in different applications All operating parameters must be validated for each customer application by the customer Should the buyer use Vishay Telefunken products for any unintended or unauthorized application the buyer shall indemnify Vishay Telefunken against all claims costs damages and expenses arising out of directly or indirectly any claim of personal damage injury or death associated with such unintended or unauthorized use Vishay Semiconductor GmbH P O B 3535 D 74025 Heilbronn Germany Telephone 49 0 7131 67 2831 Fax number 49 0 7131 67 2423 Document Number 86532 www vishay de e FaxBack 1 408 970 5600 Rev 1 20 Jan 99 9 9
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VISHAY BUD742 Manual