FAIRCHILD FDS5690 60V N-Channel PowerTrench MOSFET Manual
Contents
1. 25 C 0 0 2 0 4 0 6 0 8 1 1 2 1 4 Vsp BODY DIODE FORWARD VOLTAGE V Figure 6 Body Diode Forward Voltage Variation with Source Current and Temperature FDS5690 Rev C 069SSC4 Typical Characteristics continued 10 1600 s f 1MHz gt in Vas 2 0 V 2 1200 d ri Cis d gt 6 E ul z re X 800 o O i s lt Lu lt d 400 2 Coss e a Crss 0 0 0 5 10 15 20 25 0 10 20 30 40 50 60 Qs GATE CHARGE nC Vos DRAIN TO SOURCE VOLTAGE V Fi2. ee FAIRCHILD SEMICONDUCTOR w FDS5690 March 2000 60V N Channel PowerTrench MOSFET General Description This N Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on state resistance and yet maintain superior switching performance These devices are well suited for low voltage and battery powered applications where low in line power loss and fast switching are required Applications e C DC converter e Motor drives D D D D G s S SO 8 Absolute Maximum Ratings 7 25c unless otherwise noted Symbol Vpss Drain Source Voltage Vass Gate Source Voltage t Ip Drain Current Continuous Pulsed Pp Power Dissipation for Single Operation Features 7A 60 V P 5s on 0 0282 Vos 10V Rosion 0 033 2 Vos 6 V Low gate charge 23nC typical e Fast switching speed High performance trench technology for extremely low Pasan e High power and current handling capability 5 4 6 3 7 2 Units V 20 V Note 1a A Note 1a W Note 1b Note 1c Co nm o mlol o Ty Tstg Operating and Storage Junction Temperature Range 55 to 150 oC Thermal Characteristics Rgua Thermal Resistance Junction to Ambient Note 1a 50 Rguc Thermal Resistance Junction to Case Note 1 C W Package Outli
3. gure 7 Gate Charge Characteristics Figure 8 Capacitance Characteristics is 50 rmm Tm SINGLE PULSE Z Roson LIMIT 74 100us 40 Rosa 125 C W 10 Le ims Ta 25 C z 10ms z 100ms 39 1 1s ul z 10s O o9 i L Vas 10V DC x 04 SINGLE PULSE L Raia 125 C W 10 LT 25 C s LIILI 0 1 1 10 100 0 001 0 01 0 1 1 10 100 1000 Vos DRAIN SOURCE VOLTAGE V SINGLE PULSE TIME SEC Figure 9 Maximum Safe Operating Area Figure 10 Single Pulse Maximum Power Dissipation LLI ce D20 5 z 0 5 Lu Z0 02 02 Rosa t r t R gjA b o Roja 125 C W Tra u 0 1 0 1 a Wi 005 0 05 oH Oz P pk NE L 0 02 a i 0 02 3 inis ac o i m E 0 01 Single Pulse t2 Oo al Z p 0 005 Ty Ta P RgjJA 3 coe Duty Cycle D t4 b rr 0 002 E K HL A 0 0001 0 001 0 01 0 1 1 10 100 300 t TIME sec Figure 11 Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c Transient themal response will change depending on the circuit board design FDS5690 Rev C 0695s Q0 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx HiseC SuperSOT 8 Bottomless ISOPLANAR SyncFET CoolFET MICROWIRE TinyLogic CROSSVOLT POP UHC E CMOS PowerTrench VCX FACT QFET FACT Qu
4. iet Series QS FAST Quiet Series FASTr SuperSOT 3 GTO SuperSOT 6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which a are intended for surgical implant into support device or system whose failure to perform can the body or b support or sustain life or c whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can be effectiveness reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or This datasheet contains the design specifications for In Design product development Specifications may change in any manner without n
5. nes and Ordering Information Device Markino Device C W Tape Width FDS5690 FDS5690 2500 units 2000 Fairchild Semiconductor Corporation FDS5690 Rev C 069SSC4 DMOS Electrical Characteristics T 25 C unless otherwise noted BVpss Drain Source Breakdown Voltage Ves 0 V lp 250 pA V P ase Nal i AT Coefficient loss Zero Gate Voltage Drain Current Vos 48V Vos OV S pA mm nA E nA On Characteristics Note 2 Static Drain Source Ves 10V lp27A 0 022 0 028 On Resistance Ves 10V lp 7 A Ty 125 C 0 037 0 050 V 6V 0 025 0 033 Dynamic Characteristics Input Capacitance Vos 30 V Ves 0 V Output Capacitance f 1 0 MHz Reverse Transfer Capacitance Switching Characteristics Note 2 laton Turn On Delay Time Voo 30V lp 1 A ns t Turn On Rise Time Vas 10 V Ramn 6 Q ns la ott Turn Off Delay Time ns ti Turn Off Fall Time ns Qy Total Gate Charge Vos 30 V Ip 7 A nC Qgs Gate Source Charge Vos 10 V nC Qga Gate Drain Charge Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current A Vsp Drain Source Diode Forward Voltage Vas 2 0 V lg 2 1 A Note 2 V Notes 1 Roy is the sum of the junction to case and case to ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins Hoc is guaranteed by design while Rosa is determined by the
6. otice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev E
7. user s board design a 50 C W when n b 105 C W when m m c 125 S epa T in O n2 O mounted on a 0 in mounted on a 0 5 in e mounted on a 0 02 in e pad of 2 oz copper pad of 2 oz copper pad of 2 oz copper Scale 1 1 on letter size paper 2 Pulse Test Pulse Width lt 300 us Duty Cycle lt 2 0 FDS5690 Rev C 069SSC4 Typical Characteristics Roson NORMALIZED Ip DRAIN SOURCE CURRENT A DRAIN SOURCE ON RESISTANCE Ip DRAIN CURRENT A 0 1 2 3 4 5 6 Vos DRAIN SOURCE VOLTAGE V Figure 1 On Region Characteristics 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure 3 On Resistance Variation with Temperature 2 3 4 5 6 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics Roson NORMALIZED DRAIN SOURCE ON RESISTANCE iN C1 lt Rpsion ON RESISTANCE OHM Ils REVERSE DRAIN CURRENT A Ip DRAIN CURRENT A Figure 2 On Resistance Variation with Drain Current and Gate Voltage Ta 25 C 3 4 5 6 7 8 9 10 Vas GATE TO SOURCE VOLTAGE V Figure 4 On Resistance Variation with Gate to Source Voltage 100 Ta 125 C
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FAIRCHILD FDS5690 60V N Channel PowerTrench MOSFET Manual