FAIRCHILD FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET handbook
Contents
1. FAIRCHILD i SEMICONDUCTOR m December 2006 FDS6576 P Channel 2 5V Specified PowerTrench MOSFET General Description Features This P Channel 2 5V specified MOSFET is in a rugged 11 A 20 V Rogion 0 014 Q Veg 4 5 V gate version of Fairchild Semiconductor s advanced 2 _ PowerTrench process It has been optimized for power Roson 0 020 2 Veg 2 5 V management applications with a wide range of gate Extended Vass range 12V for battery applications drive voltage 2 5V 12V GSS 5 e Low gate charge 43nC typical Applications a ge ela e Load switch e Fast switching speed Battery protection High performance trench technology for extremely e Power management low Roscon e High power and current handling capability e RoHS Compliant SO 8 Absol ute Maxim um Rati ngs T 25 C unless otherwise noted Gate Source Voltage 11 Pulsed 50 Power Dissipation for Single Operation Note 1a Note 1b Package Marking and Ordering Information 13 FDS6576 FDS6576 2500 units 2006 Fairchild Semiconductor Corporation FDS6576 Rev E3 LAASOW 42u31 L1 MmOd payiseds AG Z jauueYyd d 9 S9SCG4 Electrical Characteristics T 25 C unless otherwise noted Off Characteristics Drain Source Breakdown Voltage Ves 0 V Ip 250 uA 2 On Characteristics note 2 Gate Threshold Voltage Vos Ves lb 250 uA AVesithy Gate Threshold Voltage lb 250 pA Re2. 2 On Resistance Variation with Drain Current and Gate Voltage Ta 125 C LAAISOW 49Us1L1EMod payloads AG Z jauueYyd d 92G9SG4 wW z lt ab uw 2 N 0 at gc sz oOo O w Zo z gt Te Ga Sz lt z pA a Rosion ON RESISTANCE OHM 6 8 Ves GATE TO SOURCE VOLTAGE V 0 25 50 75 100 125 150 T JUNCTION TEMPERATURE C Figure 3 On Resistance Variation with Figure 4 On Resistance Variation with Temperature Gate to Source Voltage E Ves OV Ta 125 C Ip DRAIN CURRENT A Is REVERSE DRAIN CURRENT A 0 2 0 4 0 6 0 8 1 Vso BODY DIODE FORWARD VOLTAGE V 2 2 5 3 Ves GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics Figure 6 Body Diode Forward Voltage Variation with Source Current and Temperature FDS6576 Rev E3 Typical Characteristics Ves GATE SOURCE VOLTAGE V lt E z fri v4 4 5 oO z a 4 r t NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9 Maximum Safe Operating Area 15 20 Q GATE CHARGE nC Figure 7 Gate Charge Characteristics C Roson LIMIT L Ve
3. devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness Datasheet Identification Product Status Definition Formative or In Design Advance Information This datasheet contains the design specifications for product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet i
4. ferenced to 25 C ome 3 5 AT Temperature Coefficient Roson Static Drain Source Ves 4 5 V IDp 11A 8 2 14 On Resistance Ves 2 5 V IDp 8 8A 11 5 20 Ves 4 5 V Ip 11 A T 125 C 11 1 23 On State Drain Current Ves 4 5V Vos 5V CaA Forward Transconductance Vps 4 5 V Ib 11A Input Capacitance Vos 10 V Ves 0V Output Capacitance f 1 0 MHz Reverse Transfer Capacitance Pa 198 Gate Drain Charge Maximum Continuous Drain Source Diode Forward Current Drain Source Diode Forward _ Voltage Ves OV Is 2 1A Note 2 Notes 1 RaJa is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins Rosco is guaranteed by design while Roca is determined by the user s board design Qe VP a 50 C W when b 105 C W when Sj fe c 125 C W when mounted mounted on a in mounted on a 04 in on a minimum pad pad of 2 oz copper A ae pad of 2 oz copper A ie Scale 1 1 on letter size paper 2 Pulse Test Pulse Width lt 300us Duty Cycle lt 2 0 FDS6576 Rev E3 LAAISOW 49Ue1LIEMod payloads AG z jauueyd d 92G9SG4 Typical Characteristics Ip DRAIN CURRENT A Roson NORMALIZED DRAIN SOURCE ON RESISTANCE 1 5 Vps DRAIN SOURCE VOLTAGE V Ip DRAIN CURRENT A Figure 1 On Region Characteristics Figure
5. h CoolFET o PACMAN SuperFET CROSSVOLT i Lo POP SuperSOT 3 DOME ImpliedDisconnect Power247 SuperSOT 6 EcoSPARK IntelliMAX PowerEdge SuperSOT 8 E CMOS ISOPLANAR PowerSaver SyncFET EnSigna LittleFET PowerTrench TCM FACT MICROCOUPLER QFET TinyBoost FAST MicroFET qs TinyBuck FASTr MicroPak QT Optoelectronics TinyPWM FPS MICROWIRE Quiet Series TinyPower FRFET MSX RapidConfigure TinyLogic MSXPro RapidConnect TINYOPTO Across the board Around the world uSerDes TruTranslation The Power Franchise ScalarPump UHC Programmable Active Droop DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support
6. s 10V SINGLE PULSE E Rosa 125 C W Ta 25 C 0 1 Vps DRAIN SOURCE VOLTAGE V CAPACITANCE pF Vps DRAIN TO SOURCE VOLTAGE V Figure 8 Capacitance Characteristics a o gt w e SINGLE PULSE Rosa 1257 W T 25 N 3 P pk PEAK TRANSIENT POWER W 3 0 0 001 0 01 0 1 1 t TIME sec 10 Figure 10 Single Pulse Maximum Power Dissipation 100 Roya 125 EW P pk v Rosa t r t Rosa SINGLE PULSE Ty Ta P Rosa t Duty Cycle D t4 t2 0 01 0 1 Figure 11 Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design FDS6576 Rev E3 LAASOW 49u31 LI MOd P AS AG Z UULYI d 9 G9SG4 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FACT Quiet Series OCX SILENT SWITCHER UniFET ActiveArray GlobalOptoisolator OCXPro SMART START vcox Bottomless GTO OPTOLOGIC SPM Wire Build it Now HiSeC OPTOPLANAR Stealt
7. s printed for reference information only Rev 122 FDS6576 Rev E3
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FAIRCHILD FDS6576 P Channel 2.5V Specified PowerTrench MOSFET handbook