ADVANCED POWER TECHNOLOGY APT10026L2FLL handbook
Contents
1. C C _ MIN TYP MAX UNIT Junction to Case PT ta Junction to Ambient ee ee Repetitive Rating Pulse width limited by maximum junction See MIL STD 750 Method 3471 temperature Starting Tj 25 C L 4 43mH RG 259 Peak IL 38A Pulse Test Pulse width lt 380 us Duty Cycle lt 2 d t AuMbers reflect the limitations of the test circuit rather than the o device itself 15 lt Ibfcont di 4 lt 700A uS VpS Vpss Ty lt 150 C APT Reserves the right to change TO 264 MAX L2 Package Outline without notice the specifications 4 60 181 g r gt 5 21 205 lt 19 51 768 and information contained herein 1 80 071 20 30 ao gt r 2 01 079 al 7 D A t 5 79 228 2 e e Y rad 6 20 244 c gt T 25 48 1 003 a 26 49 1 04 a yy bd A 2 29 090 tee gt 3 708 2 69 106 2139 842 NIK Gate Drain Y Source slogo 9780 ke gt h 39 198 518 125 gt m 5 45 215 BSC gt lt 2 Ples Dimensions in Millimeters and Inches APT s devices are covered by one or more of the following U S patents 4 895 810 5 045 903 5 089 434 5 182 234 5 019 522 5 262 336 5 256 583 4 748 103 5 283 202 5 231 474 5 434 095 5 528 0582. A PT 10026L2FLL h7 4 ADVANCED APT10026L2FLL POWER TECHNOLOGY 1000V 38A 0 2600 POWER MOS 7 Power MOS 7 is a new generation of low loss high voltage N Channel enhancement mode power MOSFETS Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering Rog on and Q Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT s patented metal gate structure e Lower Input Capacitance Increased Power Dissipation e Lower Miller Capacitance Easier To Drive G e Lower Gate Charge Qg e Popular TO 264 MAX Package s MAXIMUM RATINGS All Ratings Tc 25 C unless otherwise specified Symbol APTIOO26L2FLL UNIT Voss Drain Source Voltage 1000 Continuous Drain Current To 25 C As lt Amps a Gate Source Voltage Continuous 30 Volts Vos Gate Source Voltage Transient Total Power Dissipation To 25 C Operating and Storage Junction Temperature Range 55 to 150 a Lead Temperature 0 063 from Case for 10 Sec oo o ae lan Avalanche Current Repetitive and Non Repetitive ae Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS eymbor charactrsic Test Gondor um P wa Un DP TS Ibon On State Drain Current Vig gt Ipon X Rps on MaX Vas 10V 38 Amps Drain Source On State Resistance 2 Vag 10V 0 5 loicont ae Gate Source L
3. eakage Current Vo 30V Vos 0V fT 100 ona Gate Threshold Voltage V bs Tec lp 5mA 3 J 5 Volts Jia CAUTION These Devices are Sensitive to Electrostatic Discharge Proper Handling Procedures Should Be Followed Zero Gate Voltage Drain Current Vig Vpss 0V PR 9 pss V o J j Zero Gate Voltage Drain Current Vps 0 8 7 as OV To 125 C o i 1000 Y A APT Website http www advancedpower com USA 405 S W Columbia Street Bend Oregon 97702 1035 Phone 541 382 8028 FAX 541 388 0364 EUROPE Chemin de Magret F 33700 Merignac France Phone 33 5 57 92 15 15 FAX 33 5 56 47 97 61 050 7112 Rev 9 2001 050 7112 Rev 9 2001 DYNAMIC CHARACTERISTICS APT10026L2FLL Symbol Characteristic SSCS Test Conditions _MIN_ TYP MAX UNIT Treo pa Qua Gate Drain Miller Charge Ip Ip Cont 25 C o iolon 1e 25 go SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Test Conditions SSCS MN TYP MAX UNIT Continuous Source Current Body Diode oo Ja A Pulsed Source Current Body Diode 152 bias Diode Forward Voltage Veg OV Is Ip Cont PTT 183 vots anen e CC Reverse Recovery Time Ig Ip Cont 4 4 100A ps hie Recovery Charge Ip Cont 9 4 100A us Peak Recovery Current RRM 15 Ip Cont 4 4 100A us THERMAL CHARACTERISTICS Symbol Characteristic C S
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ADVANCED POWER TECHNOLOGY APT10026L2FLL handbook