FAIRCHILD FDP032N08 handbook
Contents
1. ification Needed Full Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor The datasheet is for reference information only Rev 1352. 7 Breakdown Voltage Variation vs Temperature 1 2 o o S T pi Es o Z m gt gt m g fi Notes a 1 Ves 0V 2 Ip 10mA 0 8 l 100 50 0 50 100 150 200 T Junction Temperature C Figure 9 Maximum Safe Operating Area T T o Operation in This Area _ is Limited by R ps on in a a 2 Ty 175 C 3 Single Pulse 1 10 100 Vps Drain Source Voltage V Ros on Normalized Drain Source On Resistance Ip Drain Current A Figure 8 On Resistance Variation vs Temperature 3 0 2 5 2 0 1 5 1 0 0 5 Notes 1 Vas 10V 2 1b 75A 0 0 l l 100 50 0 50 100 150 200 T Junction Temperature C Figure 10 Maximum Drain Current vs Case Temperature 250 200 150 100 50 0 25 50 Tc cde Temperatu arc 190 Ls Figure 11 Transient Thermal Response Curve 0 5 0 1 0 01 Thermal Response Z cl 0 001 S AA 10 10 10 10 1 Zogc t 0 4 C W Max _ 2 Duty Factor D t4 t2 a 3 Tum Tc Pom Zouc t 10 10 10 Rectangular Pulse Duration sec FDPO32N08 Rev A3 www fairchildsemi com LAASOW 4 U9u94 19MOg ISUUEUS N 80Nc 04q1 Gate Charge Test Circuit amp Waveform Resistive Switching Test Circuit amp Waveforms E Vos Vos qx Unclamped Inductive Switching Test Circuit amp Waveforms HF t Tit
3. SS FAIRCHILD DE SEMICONDUCTOR FDPO32N08 July 2008 N Channel PowerTrench MOSFET 75V 235A 3 2mo Features RDs on 2 5mO Typ Veg 10V Ip 75A Fast switching speed Low gate charge High performance trench technology for extremely low Rps on High power and current handling capability e RoHS compliant Description This N Channel MOSFET is produced using Fairchild Semicon ductor s adcanced PowerTrench process that has been espe cially tailored to minimize the on state resistance and yet maintain superior switching performance Application DC to DC convertors Synchronous Rectification GDS TO 220 G S MOSFET Maximum Ratings T 25 C unless otherwise noted Symbol Parameter FDP032N08 Units Voss Drain to Source Voltage 75 V Vass Gate to Source Voltage 20 V Drain Current Continuous Te 25 C Silicon Limited 235 A Ip Continuous Tc 100 C Silicon Limited 165 A Continuous Tc 25 C Package Limited 120 A loni Drain Current Pulsed Note 1 940 A EAS Single Pulsed Avalanche Energy Note 2 1995 mJ dv dt Peak Diode Recovery dv dt Note 3 5 5 V ns Tc 25 C 375 W P Power Dissipation B P Derate above 25 C 2 5 W C Ty TsTG Operating and Storage Temperature Range 55 to 175 C T Maximum Lead Temperature for Soldering Purpose 300 oc L 1 8 from Case for 5 Secon
4. UPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Farichild s Anti Counterfeiting Policy is also stated on our external website www fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Farichild strongly encourages customers to purchase Farichild p
5. arts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification ProductStatus Status Definition Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design Preliminary First Production TI Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Igen
6. cal Characteristics FDP032NO08 Rev A3 2 www fairchildsemi com Typical Performance Characteristics Figure 1 On 3000 Ves 15 0 V 1000 10 0 V 8 0 V 7 0 V 6 5 V 100 6 0 V 5 5 V Ip Drain Current A 50V Region Characteristics Notes 1 250s Pulse Test 2 Tc 25 C 0 1 1 Vps Drain Source Voltage V Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 0 0030 0 0025 Roson Q Drain Source On Resistance 0 0020 0 Note Tc 25 C 100 200 300 400 Ip Drain Current A Figure 5 Capacitance Characteristics 100000 10000 TCiss Cgs Cgd Cds Shorted Coss Cds Cgd E Crss Cgd H 1000 Capacitances pF FDPO32N08 Rev A3 Figure 2 Transfer Characteristics 500 100 z E D 5 O E S 10 e 8 Notes 1 Vps 20V 2 250ys Pulse Test 1 2 4 6 8 Vgs Gate Source Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature 400 100 10 Is Reverse Drain Current A 2 250us Pulse Test 0 0 0 5 1 0 1 5 Vsp Body Diode Forward Voltage V 1 Figure 6 Gate Charge Characteristics 10 Ves Gate Source Voltage V Note Ip 75A 0 50 100 150 200 Qy Total Gate Charge nC www fairchildsemi com LAASOW 4 U9u94 19MOg ISUUEUS N 80Nc 0d4q1 Typical Performance Characteristics Continued Figure
7. ds Calculated continuous current based on maximum allowable junction temperature Package limitation current is 120A Thermal Characteristics Symbol Parameter Ratings Units Rojc Thermal Resistance Junction to Case 0 4 Rocs Thermal Resistance Case to Sink Typ 0 5 C W Roja Thermal Resistance Junction to Ambient 62 5 2008 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDPO32N08 Rev A3 LAASOW Q4IUS1L18MOQd ISUUEUS N 80Nc 04q1 Package Marking and Ordering Information 1 259C unless otherwise noted LAASOW 4 U9u941 19MOg ISUUEUS N 80Nc 04q1 Device Marking Device Package Reel Size Tape Width Quantity FDPO32N08 FDPO32N08 TO 220 50 Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250uA Ves OV Te 25 C 75 V ABVpss Ere aKgown voltage temperate Ib 250uA Referenced to 25 C 0 05 vec AT Coefficient Vps 75V Veg OV 1 Zero Gate Voltage Drain Current A DSS 9 Vps 75V Tc 150 C 500 lass Gate to Body Leakage Current Ves 20V Vps OV 100 nA On Characteristics Vasth Gate Threshold Vol
8. oop franchise CTL Green FPS QFET D eee Current Tian ier Logic Green FPS e Series Qs Tone ic EcoSPARK GTO Quiet Series LE EfficentMax IntelliMAX RapidConfigure TinvPower EZSWITCH ISOPLANAR Saving our world 1mW at a time M T 7 MegaBuck SmartMax Lid MICROCOUPLER SMART START MicroFET SPM d MicroPak STEALTH Des Fairchild MillerDrive SuperFET UHC Fairchild Semiconductor MotionMax SuperSOT 3 Ultra FRFET rr Quiet Series Motion SPM SuperSOT 6 UniFET Ean OPTOLOGIC SuperSOT 8 VCX FAST OPTOPLANAR SupreMOS VisualMax FastvCore 4 SyncFET FlashWriter SYSTEM GENERAL EZSWITCH and FlashWriter are trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE S
9. re FDP032NO08 Rev A3 5 www fairchildsemi com LAASOW 4 U9u941 19MOg ISUUEUS N 80Nc 04q1 FDPO32N08 Rev A3 Vas Driver sp DUT Peak Diode Recovery dv dt Test Circuit amp Waveforms Driver RG Same Type as DUT JUL Ves dv dt controlled by Re e la controlled by pulse period Gate Pulse Width Gate Pulse Period le Body Diode Forward Current di dt IRM Body Diode Reverse Current Body Diode Recovery dv dt Body Diode Forward Voltage Drop Vpp www fairchildsemi com LAASOW Q4HIUS1L18MOQd ISUUEUS N 80Nc 04q1 Mechanical Dimensions TO 220 9 90 0 20 4 50 20 20 0 10 03 60 0 10 1 30 0 05 gt t ya E O CO N rT Oo O N 7 x Be Fi co 1 27 20 10 1 52 0 10 co e 0 80 0 10 2 54TYP 2 54 0 20 0 10 0 50 005 2 40 0 20 2 54TYP 2 54 0 20 10 00 0 20 FDP032N08 Rev A3 7 www fairchildsemi com LAASOW 4 U9u94 19MOg ISUUEUS N 80Nc 0d4q1 SS eel FAIRCHILD B SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidianries and is not intended to be an exhaustive list of all such trademarks Build it Now FPS PDP SPM The Power Franchise CorePLUS F PFS POWE PM CorePOWER FRFET PowerTrench CROSSVOLT Global Power Resource M Programmable Active Dr
10. tage Vas Vps Ip 250uA 2 5 3 5 4 5 V Hps on Static Drain to Source On Resistance Vas 10V lp 75A 2 5 3 2 ma JFS Forward Transconductance Vps 10V lp 75A Note 4 180 S Dynamic Characteristics Ciss Input Capacitance y SEA Y 11400 15160 pF ome Output Capacitance B nc E i 1360 1810 pF Cyss Reverse Transfer Capacitance 2 595 800 pF Qa tot Total Gate Charge at 10V 169 220 nC Qs Gate to Source Gate Charge Vos 60V Ip 75A 60 nC Ves 10V Qga Gate to Drain Miller Charge SS Note 4 5 3 47 z nC Switching Characteristics td on Turn On Delay Time 230 470 ns t Turn On Rise Time Vpp 37 5V lp 75A 191 392 ns talot Turn Off Delay Time REN 250 Vas 10V 335 680 ns t Turn Off Fall Time Note 4 5 121 252 ns Drain Source Diode Characteristics Is Maximum Continuous Drain to Source Diode Forward Current 235 A leM Maximum Pulsed Drain to Source Diode Forward Current 940 A Vsp Drain to Source Diode Forward Voltage Vas OV Isp 75A 1 3 V im Reverse Recovery Time Ves OV lap 75A 53 ns Q Reverse Recovery Charge di dt 100A us Note 4 77 nC Notes 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 2 0 71mH las 75A Vpp 50V Re 250 Starting Ty 25 C 3 Isp lt 75A di dt lt 200A us Vpp lt BVpss Starting Ty 25 C 4 Pulse Test Pulse width x 300us Duty Cycle lt 296 5 Essentially Independent of Operating Temperature Typi
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FAIRCHILD FDP032N08 handbook