FAIRCHILD FDP12N50/FDPF12N50T handbook
Contents
1. SUULYI N LOSNCILHdGO3 0OSNCL dO3 Typical Performance Characteristics Continued Figure 7 Breakdown Voltage Variation Figure 8 On Resistance Variation vs Temperature vs Temperature 1 2 3 0 S 3 2 5 37 gt 3 S 6 go NS N y 2 0 S 3 TE Es E S 60 1 5 m Z 9 BO 22 gt 3 2 1 0 n o Y Z S Notes S S a a 1 Vas 0V 0 5 2 Ip 2504A 0 8 0 0 100 50 0 50 3100 150 200 100 50 0 50 100 150 200 Ty Junction Temperature C T Junction Temperature C Figure 9 1 Maximum Safe Operating Area Figure 9 2 Maximum Safe Operating Area FDP12N50 FDPF12N50T 100 a acad d IM CUPIS Rer G CUR DUREE M CE s 100 E E ease Hi Non E ipw EE d T 10 NS TEE E O EEA EE EP E a ERO PES T 10 ME DUC AE t eu uM AR imn M Rue MM E PA a poa A cecus 2 AE A ed toos e L ters Ne e uen enit S qeu sri LT 5 E INE ONE LR M o O NX E 1 DUNS NU c 1 ELT Prises BOE A EE S R MUST TS VES ca L Operation in This Area Q Ee MON a _ is Limited by R ps on SON qoc ee eun a ee tte ee A co o De ces 0 1 ri o m 0 1 Hn EE EE P n 2 Ty 150 C me i c 2 7 150 C EOM X up 3 Single Pulse BH eK B 3 Single Pulse XN 1 10 100 800 1 10 100 1000 Vps Drain Source Voltage V Vps Drain Source Voltage V Figure 10 Maximum Drain Current vs Case Temperature 14 Ip Drain Current A 0 l 25 50 75 100 125 150 Tc Case Temperature C 4 www fairchi2. DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to prot
3. Dissipation rias uis S 03 we Ty Tsrc Operating and Storage Temperature Range 55 to 150 C T Maximum Lead Temperature for Soldering Purpose 300 oc 1 8 from Case for 5 Seconds Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP12N50 FDPF12N50T Units Rec Thermal Resistance Junction to Case 0 75 3 0 Recs Thermal Resistance Case to Sink Typ 0 5 C W Resa Thermal Resistance Junction to Ambient 62 5 62 5 2012 Fairchild Semiconductor Corporation 1 www fairchildsemi com 133SOIN J 9euuEu N LOSNCILddO3 0SNCL dO Package Marking and Ordering Information 1 25 C unless otherwise noted LAASOW SUUEYD N LOSNCILdHdGO3 OG9NE LAO Device Marking Device Package Reel Size Tape Width Quantity FDP12N50 FDP12N50 TO 220 50 FDPF12N50T FDPF12N50T TO 220F 50 Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250pA Vas OV Ty 25 C 500 V ABVpss Breakdown Voltage Temperature _ o i o FAT Coefficient Ip 250uA Referenced to 25 C 0 5 VC Zero Gate Voltage Drain Current You IOV Vas E
4. L FAIRCHILD AAA SEMICONDUCTOR FDP12N50 FDPF12N50T N Channel MOSFET 500V 11 5A 0 650 Features Rps on 0 550 Typ Vas 10V Ip 6A Low gate charge Typ 22nC Low Crss Typ 11pF Fast switching 100 avalanche tested Improved dv dt capability RoHS compliant May 2012 UniFET Description These N Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary planar stripe DMOS technology This advanced technology has been especially tailored to minimize on state resistance provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode These devices are well suited for high efficient switched mode power supplies and active power factor correction FDP12N50 FDPF12N50T Rev CO D TO 220F d GDS sr M Gai FDPF Series S MOSFET Maximum Ratings Tc 25 C unless otherwise noted Symbol Parameter FDP12N50 FDPF12N50T Units Voss Drain to Source Voltage 500 V Vess Gate to Source Voltage 30 V l Continuous Tc 25 C 11 5 11 5 Ip Drain Current 5 A Continuous Tc 100 C 6 9 6 9 lom Drain Current Pulsed Note 1 46 46 A EAS Single Pulsed Avalanche Energy Note 2 456 mJ lAR Avalanche Current Note 1 11 5 A EAR Repetitive Avalanche Energy Note 1 16 7 mJ dv dt Peak Diode Recovery dv dt Note 3 4 5 V ns Pp Power
5. PF12N50T Rev CO LAASOW SUULYI N LOSNCILHdGO3 0OSNCL dO3 Ves Driver sp DUT FDP12N50 FDPF12N50T Rev CO Peak Diode Recovery dv dt Test Circuit amp Waveforms Driver Re f Same Type as DUT JUL Ves e dv dt controlled by Re e la5 controlled by pulse period _ Gate Pulse Width Gate Pulse Period lew Body Diode Forward Current di dt lem Body Diode Reverse Current Body Diode Recovery dv dt Body Diode Forward Voltage Drop Vpp www fairchildsemi com LAASOW SUULYI N LOSNCILHdO3 OSNCL dO3 FDP12N50 FDPF12N50T N Channel MOSFET TO 220 Puy DE NSC ese 0 9 40 A 16 14 6 35 MAX 14 12 a 4 09 Piu Mechanical Dimensions 8 40 2 38 1 91 www fairchildsemi com Dimensions in Millimeters FDP12N50 FDPF12N50T Rev CO Package Dimensions TO 220F Potted At Potting y q wi 15 8020 20 9 404020 Front Back Side Isolation Voltage AC 2500V Dimensions in Millimeters FDP12N50 FDPF12N50T Rev CO 3 www fairchildsemi com LAASOW IeuuEu y N LOSNCILHdGO3 OSNCL dO3 SS ee el FAIRCHILD AAN SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool F PFS PowerTrench The Power Franchise AccuPower FRFET Po
6. Test Pulse width lt 300us Duty Cycle lt 2 5 Essentially Independent of Operating Temperature Typical Characteristics 2 www fairchildsemi com FDP12N50 FDPF12N50T Rev CO Typical Performance Characteristics Figure 1 On Region Characteristics Figure 2 Transfer Characteristics 30 EIS 40 Ves 10 0 V T ine Notes 8 0V 1 Vos 20V 10 7 0V 2 250us Pulse Test 6 5 V EN 6 0 V xs 5 5 V T 10 o g 5 5 O 4 O c c E E a a 5 0 1 Li 1 250us Pulse Test 2 Tc 25 C 0 05 1 0 1 1 10 20 5 6 7 8 Vps Drain Source Voltage V Ves Gate Source Voltage V Figure 3 On Resistance Variation vs Figure 4 Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs Source Current and Temperature Rps on Q Drain Source On Resistance Is Reverse Drain Current A 2 250us Pulse Test 12 18 0 0 0 5 1 0 1 5 2 0 Ip Drain Current A Van Body Diode Forward Voltage V Figure 5 Capacitance Characteristics Figure 6 Gate Charge Characteristics 2000 10 Er Ciss Cgs Cgd Cds shorted EN Vps z 100V Coss Cds Cgd x E I Crss 7 Cgd e Pr 1500 S T G G gt P o Y o d pun 1000 o z o o g Ss S S O 500 2 gt Note Ip 11 5A 0 1 1 10 30 8 12 16 20 24 Vos Drain Source Voltage V Q Total Gate Charge nC 3 www fairchildsemi com FDP12N50 FDPF12N50T Rev CO LAASOW
7. ect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner withou
8. l 1 A DSS S Vos 400V To 125 C io T less Gate to Body Leakage Current Vas 30V Vps OV 100 nA On Characteristics VGs th Gate Threshold Voltage Ves Vos lp 250uA 3 0 5 0 V Rps on Static Drain to Source On Resistance Ves 10V lp 6A 0 55 0 65 Q Ors Forward Transconductance Vos 40V lp 6A Note 4 11 5 S Dynamic Characteristics iss Input Capacitance GAE Ge 985 1315 pF Coss Output Capacitance Ey TE cg 140 190 pF Cae Reverse Transfer Capacitance 11 17 pF Qg Total Gate Charge at 10V 22 30 nC Qgs Gate to Source Gate Charge VDS 2 Ip 11 5A 6 nC Quad Gate to Drain Miller Charge ua Note 4 5 9 nC Switching Characteristics ta on Turn On Delay Time 24 60 ns L Turn On Rise Time Vpp 250V Ip 11 5A 50 110 ns Lion Turn Off Delay Time Rg 259 45 100 ns L Turn Off Fall Time Note 4 5 30 70 ns Drain Source Diode Characteristics Is Maximum Continuous Drain to Source Diode Forward Current 11 5 A Isom Maximum Pulsed Drain to Source Diode Forward Current 46 A Vsp Drain to Source Diode Forward Voltage Ves OV Isp 11 5A 1 4 V Ir Reverse Recovery Time Ves OV Isp 11 5A 375 ns Qy Reverse Recovery Charge dlg dt 100A us Note 4 3 5 E uC Notes 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 6 9mH las 11 5A Vpp 50V Rg 250 Starting Tj 25 C 3 Isp lt 11 5A di dt lt 200A us V nn lt BVpss Starting Ty 25 C 4 Pulse
9. ldsemi com FDP12N50 FDPF12N50T Rev CO LAASOW SUULYI N LOSNCILHdGO3 0OSNCL dO3 Typical Performance Characteristics Continued Figure 11 1 Transient Thermal Response Curve FDP12N50 3 En T i r1 t a Thermal Response Z Jc Sa po me ie e t 0 01 L A _ Notes 2 n A 1 Zosc t 0 75 C W Max Decr 4 2 Duty Factor D t4 t pes JUDICIS bT To Pra Zac 7 1E 3 MESSER i EE ae He pres PILIS j p St te OES it LUE QOIS 107 10 107 10 107 10 10 Rectangular Pulse Duration sec Figure 11 2 Transient Thermal Response Curve FDPF12N50T ve eo t X Notes A D Pra cit A O 2 N 1 ES AS al EN pi vie o Sr o uui Due c o 10 Uo LN c HORE o IW ro ome ls rs emm Q a sr ME M EU M SI E t P e Boii ip 0 1 L gt i Qo C E ie O 1 Zoyc t 3 C W Max 2 Duty Factor D t4 t2 i 3 Tum Tc Pom Zosc t 10 10 10 10 10 10 10 10 Rectangular Pulse Duration sec FDP12N50 FDPF12N50T Rev CO www fairchildsemi com LAASOW SUULYI N LOSNCILHdO3 OSNCL dO3 Gate Charge Test Circuit 8 Waveform Resistive Switching Test Circuit 8 Waveforms V CAS c Unclamped Inductive Switching Test Circuit amp Waveforms L Vos d En Lilas BY pss p Von oy 10 DUT Von V ps U A 5 H Tire 6 www fairchildsemi com FDP12N50 FD
10. t notice Datasheet contains preliminary data supplementary data will be published at a later Preliminary First Production date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TI s Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed SOIE EUR make changes at any time without notice to improve the design l Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor The datasheet is for reference information only www fairchildsemi com Rev 161 FDP12N50 FDPF12N50T Rev CO 10 LAASOW JPUUEYD N LOSNCILddO3 0OSNCL dO
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FAIRCHILD FDP12N50/FDPF12N50T handbook