FAIRCHILD FDMS86250 Manual
Contents
1. p 2011 Fairchild Semiconductor Corporation FDMS86250 Rev C ONAL TIE BARS i Lg ANGLE MA ON FO 7 J 2002 ONS ARE IN MILLIMETERS NOT INCLUDE BURRS MOLD FLASH OF NG FILE NAME PQFNOGSAREVA EXCEED 0 10MM ND TOLERANCING ER www fairchildsemi com LAASOW glues L MOd Jouueu N 0Sc98SIAQJ EE FAIRCHILD EE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool FPS The Power Franchise AccuPower F PFS the B Auto SPM FRFET PowerTrench D wer AX CAP Global Power Resource PowerXS lf ER Bitsic GreenBridge Programmable Active Droop wee Build it Now Green FPS QFET gea CorePLUS Green FPS e Series Osi E W I CorePOWER Gmax Quiet Series TEE CROSSVOLT GTO RapidConfigure dP CTL Intelli MAX eM M do Current Transfer Logic V ISOPLANAR 7 UL DEUXPEED Marking2. EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchil
3. Vps DRAIN to SOURCE VOLTAGE V Figure 11 Forward Bias Safe Operating Area 2011 Fairchild Semiconductor Corporation 4 FDMS86250 Rev C 5000 1000 Ciss T 2 LLI C 2 100 d lt E O lt lt 1 e 9 Css fz1MHz Vas 0V 1 i i 0 1 1 10 100 Vps DRAIN TO SOURCE VOLTAGE V Figure8 Capacitancevs Drain to Source Voltage 50 Rouc 1 3 C W g 4077 E prse ses Ness ON e e WR e 30 a KEE D Vas 6V JS z jS ALT lt 20 s a Limited by Package 10 0 25 50 75 100 125 150 Te CASE TEMPERATURE C Figure 10 Maximum Continuous Drain Current vs Case Temperature 1000 S SINGLE PULSE c RaJa 125 C W Ta 25 C O 100 a m o z amp 10 xX set Lu D Eod 05 10 10 107 1 10 100 1000 t PULSE WIDTH sec Figure 12 Single Pulse Maximum Power Dissipation Www fairchildsemi com LAASOW glues 190g Jouu
4. E FAIRCHILD a l SEMICONDUCTOR FDMS86250 N Channel PowerTrench MOSFET 150 V 20 A 25 mO Features General Description W Max rps on 25 MQ at Vas 10 V Ip 26 7 A This N Channel MOSFET is lee using Fairchild Semiconductors advanced Power Trench process that has M Max rps oy 33 MQ at Vas 6 V Ip 5 8 A been especially tailored to minimize the on state resistance and m Advanced package and silicon combination for low rpso and yet maintain superior switching performance high efficiency December 2011 B MSL1 robust package design B 100 UIL tested B RoHS Compliant l B DC DC Conversion Application Top Bottom D D D D Power 56 MOSFET Maximum Ratings T 25 c unless otherwise noted Symbol Parameter Ratings Units Vps Drain to Source Voltage 150 V Vas Gate to Source Voltage 20 V Drain Current Continuous Package limited Tc 25 C 20 Continuous Silicon limited Tc 225 C 42 A Continuous Ta 25 C Note 1a 6 7 Pulsed 50 EAS Single Pulse Avalanche Energy Note 3 180 mJ p Power Dissipation Tc 225 C 96 W R Power Dissipation Tg 25 C Note 1a 2 5 Ty TsrG Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Rose Thermal Resistance Junction to Case 1 3 C W Roya Thermal Resistance Junction to Ambient Note 1a 50 Package Marking and Ordering Information Device Marking Device Package
5. LSE DURATION 80 us NORMALIZED DRAIN TO SOURCE ON RESISTANCE Vas 4 5V DUTY CYCLE 0 5 MAX 0 0 0 1 2 3 4 5 0 10 20 30 40 50 Vps DRAIN TO SOURCE VOLTAGE V Ip DRAIN CURRENT A Figure 1 On Region Characteristics Figure2 Normalized On Resistance vs Drain Current and Gate Voltage 2 4 80 6 22 767A gt 67a PULSE DURATION 80 ps em Vas 10V ore DUTY CYCLE 0 5 MAX D l u 60 Y 1 8 o 2 QF 16 z N GO du 14 E d 40 r a E e412 c O O o O H 1 0 T S S 20 z H S Ty 259C E 0 6 0 4 0 75 50 25 0 25 50 75 100 125 150 4 5 6 7 8 9 10 Ty JUNCTION TEMPERATURE C Vas GATE TO SOURCE VOLTAGE V Figure3 Normalized On Resistance Figure4 On Resistance vs Gate to vs Junction Temperature Source Voltage 50 T T 100 T PULSE DURATION 80 us z Ves 0V DUTY CYCLE 0 5 MAX n 40 ui 10 Vue zs BN oc O e 30 S 1 T 180 C E Ty 25 C m a O z 20 u o D a ep Ty 55 C 4 10 t 0 01 d Ty 55 C 0 0 001 2 3 4 5 6 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vas GATE TO SOURCE VOLTAGE V Vsp BODY DIODE FORWARD VOLTAGE V Figure 5 Transfer Character
6. Reel Size Tape Width Quantity FDMS86250 FDMS86250 Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDMS86250 Rev C LAASOW 4 U9u91L19Mog SUUBYD N 0Sc98SIAQH Electrical Characteristics r7 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250 uA Veg 20 V 150 V A es ca wiwollage temperatus Ip 250 uA referenced to 25 C 106 mV C Al Coefficient Ire Zero Gate Voltage Drain Current Vps 120 V Vgs 0 V 1 uA less Gate to Source Leakage Current Ves 20 V Vps 0 V 100 nA On Characteristics Noen Gate to Source Threshold Voltage Vas Vps lp 250 pA 2 0 2 9 4 0 V BS EE Ip 250 uA referenced to 25 C 11 mV C AT j Temperature Coefficient i Vas 10 V Ip 26 7 A 19 25 DS on otatic Drain to Source On Resistance Ves 6 V Ip 58A 23 33 mQ Ves 10 V Ip 6 7 A Ty 125 C 35 46 JFS Forward Transconductance Vps 10 V Ip 6 7 A 24 S Dynamic Characteristics Ciss Input Capacitance 7 TET Y 1750 2330 pF E Output Capacitance i SE MHz di 165 220 pF Lues Reverse Transfer Capacitance 8 8 15 pF Hg Gate Resistance 0 5 Q Switching Characteristic
7. Small Speakers Sound Louder Saving our world 1mW W KkW at a time Tce Dual Cool and Better SignalWise TriFault Detect EcoSPARK MegaBuck SmartMax TR EGURRENT EfficentMax M MICROCOUPLER SMART START SerDes ESBOIM MicroFET Solutions for Your Success n MicroPak SPM ZZ D eg MicroPak2 STEALTH Se Fairchild MillerDrive SuperFET UHC Fairchild Semiconductor MotionMax SuperSOT 3 Ek FACT Quiet Series Motion SPM SuperSOT 6 UniFET FACT mWSaver SuperSOT 8 VOX FAST OptoHiT SupreMOS9 VisualMax FastvCorBii OPTOLOGIC SyncFET VoltagePlus FETBench OPTOPLANAR Sync Lock XS FlashWriter SYSTEM GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
8. asheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor The datasheet is for reference information only Rev 160 www fairchildsemi com First Production 2011 Fairchild Semiconductor Corporation 7 FDMS86250 Rev C LAASOW 4U9u91 119 Mod SUUBYD N OSc98SINdS
9. d or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TM Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed FU Proaction make changes at any time without notice to improve the design Dat
10. eu N 0Sc98SIAQJ Typical Characteristics 1 25 c unless otherwise noted 2 DUTY CYCLE DESCENDING ORDER a D 0 5 c d 0 2 T a 0 1 0 1 E O E 0 05 GE 002 zm 0 01 XA z 0 01 O l NOTES SINGLE dires DUTY FACTOR D t4 t Roya 125 C W PEAK Ty Ppy X Zoya X Roya TA 0 001 10 10 10 1 10 100 t RECTANGULAR PULSE DURATION sec Figure 13 Junction to Ambient Transient Thermal Response Curve 2011 Fairchild Semiconductor Corporation FDMS86250 Rev C 1000 Www fairchildsemi com LAASOW 4U9U91 19 Mod SUUBYD N 0Sc98SIAQJ Dimensional Outline and Pad Layout CH ETAIL A
11. istics Figure6 Sourceto Drain Diode Forward Voltage vs Source Current 2011 Fairchild Semiconductor Corporation 3 WWW fairchildsemi com FDMS86250 Rev C LAASOW 4 U9U91 19 Mod SUUBYD N OSc98SINdS Typical Characteristics 1 25 c unless otherwise noted sch e Vas GATE TO SOURCE VOLTAGE V 0 4 8 12 16 20 24 28 Qy GATE CHARGE nC Figure 7 Gate Charge Characteristics 30 lt i c 10 Ty 25 C tc D o D Tj 100 C O Z lt lt Ty 125 C a d E 1 0 01 0 1 1 10 100 tav TIME IN AVALANCHE ms Figure9 Unclamped Inductive Switching Capability 100 oo ere S T We CDL ELI o T SES e iN W I Ti W e x Lu J ME NS sl oc 1 ss Ss t MEE T 1 ms o THIS AREA IS tec ae Dia 10 ms Z 0 1 LIMITED BY roson iiss 100 ms A SINGLE PULSE Ssp s di Ty MAX RATED e 10s Roya 125 C W ipc Ta 25 C 0 001 E 0 1 1 10 100 500
12. s Joan Turn On Delay Time 14 25 ns Rise Time Vpp 75 V Ip 6 7 A 4 3 10 ns Loop Turn Off Delay Time Vas 10 V RHagu 6 Q 22 35 ns lr Fall Time 4 2 10 ns Qg Total Gate Charge Ves 0 Vto10 V 25 36 nC Qg Total Gate Charge Ves 0 Vto5 V Vpp 75 V 14 20 nC Qgs Gate to Source Charge Ip 6 7 A 74 nc Lag Gate to Drain Miller Charge 5 5 nC Drain Source Diode Characteristics Ves 0 V Is 2A Note 2 0 72 1 2 V Source Drain Diode Forward Voltage V SD 9 Vas 0 V ls 67 A Note2 0 8 13 t Reverse Recovery Time 73 117 ns y lr 6 7 A di dt 100 A us Qr Reverse Recovery Charge 112 180 nC Notes 1 Roya is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1 5 x 1 5 in board of FR 4 material Ro jc is guaranteed by design while Roca is determined by the user s board design 2 Pulse Test Pulse Width 300 us Duty cycle 2 096 a 50 C W when mounted on a 1 in pad of 2 oz copper eo o Fano b 125 C W when mounted on a minimum pad of 2 oz copper LAASOW glues 190g Jouueu N 0Sc98SIAQJ 3 Starting Ty 25 C L2 1 mH las 19 A Vpp 135 V Veg 10 V 2011 Fairchild Semiconductor Corporation 2 FDMS86250 Rev C www fairchildsemi com Typical Characteristics T 25 c unless otherwise noted 50 Ves 75 5 V 40 V e 6y PULSE DURATION 80 ps GS DUTY CYCLE 0 5 MAX 30 20 Ip DRAIN CURRENT A 10 PU
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FAIRCHILD FDMS86250 Manual