FAIRCHILD FDMS86500DC Manual
Contents
1. 10000 Ciss T amp 1000 E Coss Z lt lt oa 100 S L Criss f 1MHz Vas 0V 10 0 1 1 10 60 Vps DRAIN TO SOURCE VOLTAGE V Figure8 Capacitancevs Drain to Source Voltage 180 A 150 ka G 120 a tc 2 O 90 c lt G 60 a 30 Limited by Package 0 25 50 75 100 125 150 Te CASE TEMPERATURE C Figure 10 Maximum Continuous Drain Current vs Case Temperature 2000 TTT S 1000 SINGLE PULSE x Huus 81 C W T 225 C O D E 100 LLI o Ka st D x 10 st LLI D B ud 10 10 10 1 10 100 1000 t PULSE WIDTH sec Figure 12 Single Pulse Maximum Power Dissipation www fairchildsemi com LAASOW 4 U9U91I J9MOd W909 IENq JSUUeYO N OCOOS98SINds Typical Characteristics 1 25 c unless otherwise noted 2 DUTY CYCLE DESCENDING ORDER l m D 0 5 2 0 2 T i 012. 100 Ty 25 C T 100 C 10 Ty 125 C 1 0 01 0 1 1 10 100 500 tay TIME IN AVALANCHE ms Figure9 Unclamped Inductive Switching Capability 300 x 100 gos NE Bes T yrs Md S i TA 1 ms Ae K 10 e gt Lim RES lt X a cra Ze NUI ST TS SS 10 ms 4 THIS AREA IS Re Tal IDN PN LIMITED BY reizt SC SEHR 100 ms s SINGLE PULSE S Nu 0 1 T MAX RATED he Cal S Raja 81 C W o 10s Ta 25 C DC 0 01 NN L LLILLIL Mii 0 01 0 1 1 10 100 400 Vps DRAIN to SOURCE VOLTAGE V Figure 11 Forward Bias Safe Operating Area 02011 Fairchild Semiconductor Corporation FDMS86500DC Rev C Typical Characteristics 1 25 c unless otherwise noted
3. DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TM Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed PUL Proguction make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete NOL TE TOGUCHOR Semiconductor The datasheet is for reference information only 2011 Fairchild Semiconductor Corporation 8 FDMS86500DC Rev C First Production Rev l60 Www fairchildsemi com LAASOW glues J9MOd W909 ENG JSUUeYO N 9OI00S98SIAQJ
4. lt x Ty 25 C tc A 50 A Ty 2 559C 0 2 3 4 5 6 7 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 02011 Fairchild Semiconductor Corporation FDMS86500DC Rev C NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION 80 us Vgs 7 10 V DUTY CYCLE 0 5 MAX 0 0 50 100 150 200 Ip DRAIN CURRENT A Figure2 Normalized On Resistance vs Drain Current and Gate Voltage 10 rae In 29 A PULSE DURATION 80 us E D DUTY CYCLE 0 5 MAX 8 O St z a 9 t o O ui ar 4 c z z fw T D 2 9 Ty 25 C 0 5 6 7 8 9 10 Vas GATE TO SOURCE VOLTAGE V Figure4 On Resistance vs Gate to Source Voltage 200 100 Ves 0 V Tj 150 C 0 1 0 01 Is REVERSE DRAIN CURRENT A 0 001 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Current 4 www fairchildsemi com LAASOW 4 U9U91 J9MOd W909 eng J guueu N 9OI00S98SIAQJ las AVALANCHE CURRENT A Ip DRAIN CURRENT A 10 Vas GATE TO SOURCE VOLTAGE V 0 20 40 60 80 Qy GATE CHARGE nC Figure 7 Gate Charge Characteristics
5. 01 o O 0 05 GE 002 4 Tr pem 0 01 a 2 S S 00 SINGLE PULSE DUTY FACTOR D tt x Roya 81 C W PEAK T Pom X Zoua X Rosa TA H 0 001 10 10 10 1 10 100 t RECTANGULAR PULSE DURATION sec Figure 13 Junction to Ambient Transient Thermal Response Curve 02011 Fairchild Semiconductor Corporation FDMS86500DC Rev C 1000 Www fairchildsemi com LAASOW 4 U9U91I J9MOd W909 IENq J guueu N 9OI00S98SIAQJ Dimensional Outline and Pad Layout 4 40 PIH 1 IDENT MAY APPEAR AS ME OPTIONAL TOP VIEW e SEE DETAIL A Lee FRONT VIEW LAND PATTERN RECOMMENDATION OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE 7 CHAMFER CORNER AS FIN si IDENT MAY APPEAR AS OPTIONAL 4 D1zD 3 SIDE VIEW NOTES UNLESS OTHERWISE SPECIFIED e A PACKAGE STANDARD REFERENCE BOTTOM VIEW JEDET MO 240 ISSUE A VAR AA DATED OCTOBER 2002 B ALL DIMENZIONS ARE IN MILLIMETERS Cj DIMENSIONS DO WOT INCLUDE BURRS OR MOLD FLASH MOLD FLASH OF BURRS DOES NOT EXCEED 10MM D DIMENSIONING AND TOLERANCIMG FER ASJNMETTY12 zM 1332 E DRAWING FILE NAME PZFIOSDREVT 0 20 noo 1 05 SEATING Uu DETAIL A PLANE SCALE A 2011 Fairchild Semiconductor Corporation 7 www fairchildsemi com FDMS86500DC Rev C LAASOW 4 U9U91I J9MOd W909 eng j guueu N 2GI00S98SIAQH Bees FAIRCHILD EE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and ser
6. 7 4 5 V AVGs th Gate to Source Threshold Voltage B DAT ees Temperature Caetiicent Ip 250 uA referenced to 25 C 12 mV C Vas 10 V lp 229 A 1 9 2 3 DS on otatic Drain to Source On Resistance Vas 28V lp224A 2 4 3 3 mQ Vas 10 V lp 229A Tj 125 C 3 0 3 7 JFS Forward Transconductance Vps 10V lp 229A 98 S Dynamic Characteristics Ciss Input Capacitance y Ge gei 5775 7680 pF Oo Output Capacitance E n i NO 1605 2680 pF Cres Reverse Transfer Capacitance 48 95 pF Rg Gate Resistance 1 0 Q Switching Characteristics ta on Turn On Delay Time 35 56 ns i Rise Time Vpp 30 V lp 29 A 25 40 ns Loop Turn Off Delay Time Vas 10 V Reen 6 Q 34 54 ns lr Fall Time 8 2 17 ns Q Total Gate Charge Vas 20 Vto 10V 76 107 nC gon Total Gate Charge Vas 0Vto8V 62 87 nC Qgs Total Gate Charge 31 nC Lag Gate to Drain Miller Charge 15 nC Drain Source Diode Characteristics f Vas 0 V Is 2 7 A Note 2 0 71 1 2 V Source to Drain Diode Forward Voltage V SD i 9 Veg 0V lg 29A Note 2 0 79 13 l5 Reverse Recovery Time 59 95 ns lE 29 A di dt 100 A us Uu Reverse Recovery Charge F 46 74 nC 2011 Fairchild Semiconductor Corporation FDMS86500DC Rev C www fairchildsemi com LAASOW 4 U9U91I J9MOd W909 eng J guueu N 2OI00S98SIAQJ Thermal Characteristics RaJc Thermal Resistance Junction to Case Top Source 2 8 Da Thermal Resistance Junct
7. E FAIRCHILD ree SEMICONDUCTOR December 2011 FDMS86500DC N Channel Dual Cool Power Trench MOSFET 60 V 60 A 2 3 mO Features General Description m Dual Cool M Top Side Cooling PQFN package This N Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process BEE Advancements in both silicon and Dual Cool M package W Max rps on 3 3 MQ at Ves 8 V lp 24 A technologies have been combined to offer the lowest rps on while maintaining excellent switching performance by extremely BREET NIXUS TI IOV Masia low Junction to Ambient thermal resistance B 100 UIL Tested Applications B RoHS Compliant B Synchronous Rectifier for DC DC Converters B Telecom Secondary Side Rectification B High End Server Workstation Vcore Low Side S D S D S D G D Top Power 56 Bottom MOSFET Maximum Ratings Ta 25 C unless otherwise noted Symbol Parameter Ratings Units Vos Drain to Source Voltage 60 V Ves Gate to Source Voltage 20 V Drain Current Continuous Package limited Tc 25 C 60 Continuous Silicon limited Te 225 C 177 A Continuous Ta 25 C Note 1a 29 Pulsed 200 Eas Single Pulse Avalanche Energy Note 3 317 mJ p Power Dissipation Tc 225 C 125 W V Power Dissipation Ta 25 C Note 1a 3 2 Ty Ter Operating and Storage Junction Temperature Range 55 to 150 C The
8. EMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external websi
9. f 2 oz copper i 200FPM Airflow 20 9x10 4x12 7mm Aluminum Heat Sink 1 in pad of 2 oz copper j 200FPM Airflow 20 9x10 4x12 7mm Aluminum Heat Sink minimum pad of 2 oz copper b 81 C W when mounted on k 200FPM Airflow 45 2x41 4x11 7mm Aavid Thermalloy Part 10 L41B 11 Heat Sink 1 in pad of 2 oz copper 200FPM Airflow 45 2x41 4x11 7mm Aavid Thermalloy Part 10 L41B 11 Heat Sink minimum pad of 2 oz copper 2 Pulse Test Pulse Width 300 us Duty cycle 2 096 3 Starting Ty 25 C N ch L 0 3 mH las 46 A Vpp 54 V Veg 10 V 2011 Fairchild Semiconductor Corporation FDMS86500DC Rev C a minimum pad of 2 oz copper www fairchildsemi com LAASOW 4 U9U91I J9MOd W909 eng j guueu N 9OI00S98SIAQH Typical Characteristics T 25 c unless otherwise noted 200 T 150 LL tc tc O 100 Z tc m oe 50 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 0 1 2 3 4 Vps DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 1 8 1 6 1 4 1 2 1 0 0 8 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 0 6 75 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure3 Normalized On Resistance vs Junction Temperature 200 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX T 150 Lu tc CC 100 o Ty 150 C
10. ion to Case Bottom Drain 1 0 Daa Thermal Resistance Junction to Ambient Note 1a 38 Roya Thermal Resistance Junction to Ambient Note 1b 81 Roa Thermal Resistance Junction to Ambient Note 1c 27 Roa Thermal Resistance Junction to Ambient Note 1d 34 Roa Thermal Resistance Junction to Ambient Note 16 16 CN Dau Thermal Resistance Junction to Ambient Note 1f 19 Daa Thermal Resistance Junction to Ambient Note 1g 26 Roya Thermal Resistance Junction to Ambient Note 1h 61 Roa Thermal Resistance Junction to Ambient Note 1i 16 Roa Thermal Resistance Junction to Ambient Note 1j 23 Roya Thermal Resistance Junction to Ambient Note 1k 11 Dau Thermal Resistance Junction to Ambient Note 11 13 NOTES 1 Roya is determined with the device mounted on a FR 4 board using a specified pad of 2 oz copper as shown below Rgjc is guaranteed by design while Rgca is determined by the user s board design d Still air 20 9x10 4x12 7mm Aluminum Heat Sink minimum pad of 2 oz copper e Still air 45 2x41 4x11 7mm Aavid Thermalloy Part 10 L41B 11 Heat Sink 1 in pad of 2 oz copper f Still air 45 2x41 4x11 7mm Aavid Thermalloy Part 10 L41B 11 Heat Sink minimum pad of 2 oz copper OOOOO OD o omo c Still air 20 9x10 4x12 7mm Aluminum Heat Sink 1 in pad of 2 oz copper a 38 C W when mounted on a 1 in pad of 2 0z copper g 200FPM Airflow No Heat Sink 1 in pad of 2 oz copper h 200FPM Airflow No Heat Sink minimum pad o
11. rmal Characteristics Rouc Thermal Resistance Junction to Case Top Source 2 8 Da Thermal Resistance Junction to Case Bottom Drain 1 0 Dau Thermal Resistance Junction to Ambient Note 1a 38 Roya Thermal Resistance Junction to Ambient Note 1b 81 C W Roya Thermal Resistance Junction to Ambient Note 1i 16 Rosa Thermal Resistance Junction to Ambient Note 1j 23 Reya Thermal Resistance Junction to Ambient Note 1k 11 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 86500 FDMS86500DC Dual Cool M Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDMS86500DC Rev C LAASOW olli J9MOdg W009 Jengq jouueuD N 2300S98SINQ3 Electrical Characteristics r7 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250 uA Ves 20 V 60 V BEMDSS EE Ip 250 uA referenced to 25 C 30 mV C ATI Coefficient lpss Zero Gate Voltage Drain Current Vps 48 V Ves 0 V 1 uA less Gate to Source Leakage Current Ves 20 V Vps 0 V 100 nA On Characteristics VGS th Gate to Source Threshold Voltage Vas Vps lp 250 uA 2 5 3
12. te www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS
13. vice marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool FPSIM The Power Franchise AccuPower F PFS the Auto SPM FRFET PowerTrench p wer AX CAP Global Power Resource PowerXS el E Bitsic GreenBridge Programmable Active Droop D Build it Now Green FPS QFET eegen CorePLUS Green FPS e Series Qs ie ic CorePOWER Gmax Quiet Series EE CROSSVOLT GTO RapidConfigure e T CTL IntelliMAX AU P ONE Current Transfer Logic ISOPLANAR 72 Ae DEUXPEED Marking Small Speakers Sound Louder Saving our world 1mW W kW at a time B Dual Cool and Better SignalWise TriFault Detect EcoSPARK MegaBuck SmartMax Tee eMRRENTS EfficentMax M MICROCOUPLER SMART START SerDes ESBC MicroFET Solutions for Your Success MicroPak SPM yz LC MicroPak2 STEALTH apes Fairchild MillerDrive SuperFET UHC Fairchild Semiconductor MotionMax SuperSOT 3 Mure npe ns FACT Quiet Series Motion SPM SuperSOT 6 UniFET FACT mWSaver SuperSOT 8 VOX FAST OptoHiT SupreMOS VisualMax FastvCore OPTOLOGIC SyncFET VoltagePlus FETBench OPTOPLANAR Sync Lock XS FlashWriter SYSTEM GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD S
Download Pdf Manuals
Related Search
FAIRCHILD FDMS86500DC Manual