ROHM SSTA28 MMSTA28 handbook
Contents
1. f 1MHz ES Ta 25 C Ta 25 C E Vce 10V 500 e a 9 amp 200 F4 5 100 a S 50 Cib z L e Cob E Z 2 tc E 10 1 2 5 10 20 50 1 10 100 1000 REVERSE BIAS VOLTAGE V Ic COLLECTOR CURRENT mA n bandwdth product vs collector current 2 2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO LTD The contents described herein are subject to change without notice The specifications for the product described in this document are for reference only Upon actual use therefore please request that specifications to be separately delivered Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set Any data including but not limited to application circuit diagrams information described herein are intended only as illustrations of such devices and not as the specifications for such devices ROHM CO LTD disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights and further assumes no liability of whatsoever nature in the event of any such infringement or arising from or connected with or related to t2. VOLTAGE V Vceisat COLLECTOR EMITTER SATURATION 1 2 5 10 20 50 100200 5001000 Ic COLLECTOR CURRENT mA Fig 4 DC current gain vs collector current 2 2 Voe 5V 2 0 o 1 8 Ta 40 C aii d 16 gt T 14 PN B E 12 a w 10 125 C 2 m 08 8 g 0 6 0 4 1 2 5 10 20 50 100 200 5001000 Ic COLLECTOR CURRENT mA Fig 7 Base emitter ON voltage vs collector current 5 10 20 50 100 200 5001000 Ic COLLECTOR CURRENT mA Fig 5 Collecor emitter saturation voltage vs collector current NM o o Ta 40 C o Dy 25 C o VOLTAGE V 125 Vcesat COLLECTOR EMITTER SATURATION o o o eo P 1 2 5 10 20 50 100 200 5001000 Ic COLLECTOR CURRENT mA Fig 6 Base emitter saturation voltage vs collector current 1000 CAPACITANCE pF ig 8 Capacitance vs reverse bias voltage Fig 9 Current gai
3. IBEO 0 1 uA Ves 10V Ices 0 5 uA Vce 10V Collector emitter saturation voltage SHE L2 M IREA OAOA 9 VcE sat 2 0 8 1 5 V Ic IB 100mA 0 1mA Base emitter saturation voltage VBE on 1 4 2 0 V Vce ls 5V 100mA DC current transfer ratio hFE 19900 Merc dec 10MA 10000 Vce 5V lc 100mA Transition frequency fr 125 200 MHz Vce 5V le 10mA f 100MHz Output Capecitance Cob 5 0 8 0 pF Vcs 10V le 0 f 1MHz 1 2 Transistors Electrical characteristic curves MIO AO O oc OO OO 00 0 0 20 4 0 6 0 8 1 0 1 2 1 4 1 6 1 8 2 0 Vce COLLECTOR EMITTER VOLTAGE V Fig 1 Grounded emitter output characteristics Ta 25 C 200k 100k 0 8 0 6 04 Ic COLLECTOR CURRENT mA 02 o le OuA 0 0 5 10 L5 20 2 5 3 0 35 40 45 5 0 Vce COLLECTOR EMITTER VOLTAGE V Fig 2 Typical output characteristics 1c ls 1000 SSTA28 MMSTA28 Ta 25 C 50k VCE 5V 20k 10k hre DC CURRENT GAIN 5k 2k 1 2 5 10 20 50 100 200 5001000 Ic COLLECTOR CURRENT mA Fig 3 DC current gain vs collector current II N to Ic ls 1000
4. AJAM MSTA 28 Ay RS SSTA28 MMSTA28 Transistors NPN general purpose transistor SSTA28 MMSTA28 eFeatures 1 BVces lt 80V Ic 1 00uA eExternal dimensions Unit E mm SSTA28 2 9 0 2 n m 1 9 0 2 ePackage marking and packaging specifications mem Part No SSTA28 MMSTA28 i aL Packaging type SST3 SMT3 Marking RAT RAT Code T116 T146 Basic ordering unit pieces 3000 3000 1 Emitter ROHM SST3 i 0 05 B 2 Base JEDEC SOT 23 All terminals have same dimensions 3 Collector MMSTA28 eAbsolute maximum ratings Ta 25 C ne Parameter Symbol Limits Unit d eE Collector base voltage Vcao 80 V Collector emitter voltage Vceo 80 V Emitter base voltage VEBO 12 V 1o Collector current lc 0 3 A 015293 amp Collector power dissipation Pc 0 2 W E er 11942005 _ sti a Bg Junction temperature Tj 1 50 C All terminals have same dimensions ase Storage temperature Tstg 55 to 150 C HEDEG SOT 328 18 Pollector eElectrical characteristics Ta 25 C Parameter Symbol Min Typ Max Unit Conditions Collector base breakdown voltage BVcBo 80 V Ic 100HA Collector emitter breakdown voltage BVces 80 V Ic 1004A Emitter base breakdown voltage BVeEBo 12 V le 10nA IcBo 0 1 uA Vcs 60V Collector cutoff current
5. he use of such devices Upon the sale of any such devices other than for buyer s right to use such devices itself resell or otherwise dispose of the same no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO LTD is granted to any such buyer Products listed in this document use silicon as a basic material Products listed in this document are no antiradiation design The products listed in this document are designed to be used with ordinary electronic equipment or devices such as audio visual equipment office automation equipment communications devices electrical appliances and electronic toys Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life such as medical instruments transportation equipment aerospace machinery nuclear reactor controllers fuel controllers and other safety devices please be sure to consult with our sales representative in advance About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 Item 16 of Export Trade Control Order in Japan In case of export from Japan please confirm if it applies to objective criteria or an informed by MITI clause on the basis of catch all controls for Non Proliferat
6. ion of Weapons of Mass Destruction Appendix1 Rev1 0
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ROHM SSTA28 MMSTA28 handbook