FAIRCHILD FDMS8570S Manual
Contents
1. L 5 10 a 4 90 ri 5 10 PKG 391 iar 8 5 i 8 7 6 5 o7 pL i uM KEEP OUT AREA Bd ees el 6 25 3 75 Eod 5 90 SRT 6 81 7 p PINI D 127 KSI vibes K IDENT MAY 1 4 r c3 BN EE dd APPEAR AS TOP VIEW 4 2 3 4 OPTIONAL 127 0 61 SEE DETAILA m 3 81 eee LAND PATTERN ae ae RECOMMENDATION SIDE VIEW OPTIONAL DRAFT L 5 10 _ ANGLE MAY APPEAR 881 4 90 ON FOUR SIDES OF THE PACKAGE 1272 e 0 46 6 0 39 b pe gp RET INA Hes 0 36 9 Hd Lh n vm 1 2 3 4 01002 C A B L J 7 l i p 0 52 on Es Nd Bc 0 44 in NR v1 IV 625 5 85 E 7 0 50 d 5 90 5 65 CHAMFER Ez X L i 3 40 CORNER uM 181 Hs i AS PIN 1 i PEE IDENT MAY KA 28 ae uid APPEAR AS i 1 19 Pod OPTIONAL lild YA 1 0 15 MAX 2X ER P 4 OPTION B PUNCHED TYPE 3 86 7 364 044 NOTES UNLESS OTHERWISE SPECIFIED A PACKAGE STANDARD REFERENCE BOTTOM VIEW JEDEC MO 240 ISSUE A VAR AA DATED OCTOBER 20022. B ALL DIMENSIONS ARE IN MILLIMETERS 0 10 C 4 C DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH MOLD FLASH OR BURRS DOES NOT EXCEED 0 10MM D DIMENSIONING AND TOLERANCING PER xz wins ASME Y14 5M 1994 eee i C E IT IS RECOMMENDED TO HAVE NO TRACES 0 20 0 00 OR VIAS WITHIN THE KEEP OUT AREA d SEATING F DRAWING FILE NAME DETAIL A PLANE SCALE 2 1 OPTION A SAWN TYPE 2012 Fairchild Semiconductor Corporation 7 www fairchildsemi com FDMS8570S Rev D1 i 1339u s guoue1 19Mog Jeuueu N S0Z7S8SIAQJ Sa ae FAIRCHILD E SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool F PFS PowerTrench The Power Franchise AccuPower FRFET Powerxs the e AX CAP Global Power Resource Programmable Active Droop wer Bitsic Green Bridge QFET franchise sy Build it Now Green FPS QS TinyBuck CorePLUS Green FPS e Series Quiet Series TinyCalc CorePOWER Gmax RapidConfia ire TM TinyLogic CROSS VOL TM GTO c TM TINYOPTO CTL IntelliMAX TinyPower Current Transfer Logic ISOPLANAR Saving our world 1mW W kW at a time TinvPWM DEUXPEED Marking Small Speakers Sound Louder SignalWise Euh ere Dual Cool and Better SmartMax Tice E
3. gt 04 10 10 10 10 10 10 100 1000 t PULSE WIDTH s Figure 12 Single Pulse Maximum Power Dissipation www fairchildsemi com wi L339u sS guoue1 16Mog Jeuueu N SOZS8SINGS Typical Characteristics T 25 c unless otherwise noted 2 1 DUTY CYCLE DESCENDING ORDER D 0 5 d 0 2 s 01 0 1 m E 005 Y I ui 0 02 S 9 om Pom W 50 01 3 IA t 1j s 1 G to O 1E 3 SINGLE PULSE NOTES l R ya 125 C W DUTY FACTOR D t4 t PEAK Ty Pow X Zoya X Roja TA 1E 4 HL CU LN 10 10 10 10 10 10 100 t RECTANGULAR PULSE DURATION s Figure 13 Junction to Ambient Transient Thermal Response Curve 2012 Fairchild Semiconductor Corporation FDMS8570S Rev D1 1000 www fairchildsemi c
4. Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Product Status Definition i Datasheet contains the design specifications for product development Specifications Formative InDesign may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design Euli Production Datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design Natin Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor The datasheet is for reference information only 2012 Fairchild Semiconductor Corpora
5. Resistance Junction to Case Tc 25 C 2 6 Roja Thermal Resistance Junction to Ambient Note 1a 50 C W Package Marking and Ordering Information Device Marking Tape Width Quantity 1000 FDMS85705 3000 units 2012 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDMS8570S Rev D1 wi L339u S guoue1L1eMog jeouueu2 N S0ZS8SIAQA Electrical Characteristics 1 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage lp 1 mA Veg OV 25 V Wa AR Ip 10 mA referenced to 25 C 23 mV C ATy Coefficient Ipss Zero Gate Voltage Drain Current Vps 20V Ves 0V 500 LA loss Gate to Source Leakage Current Ves 12 V 8 V Vps 0 V 100 nA On Characteristics VGs th Gate to Source Threshold Voltage Ves Vps lp 1 mA 1 1 1 5 2 2 V AV csith Soe oe TH NO RGAE Ib 10 mA referenced to 25 C 3 mV C ATy Temperature Coefficient Ves 10 V lp 24 A 2 1 2 8 DS on Static Drain to Source On Resistance Ves 4 5 V Ip 22A 2 4 3 3 ma Ves 10 V Ip 24 A Ty 125 C 2 9 3 9 Ors Forward Transconductance Vps 5V Ip 24A 215 S Dynamic Characteristic
6. 0 Vas GATE TO SOURCE VOLTAGE V Figure4 On Resistance vs Gate to Source Voltage 100 10 0 1 0 01 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Current www fairchildsemi com wi 1339u sS guoue1 16Mog Jeuueu N S0Z7S8SIAQJ Typical Characteristics T 25 c unless otherwise noted 10 Ip 28A Vp Vas GATE TO SOURCE VOLTAGE V 0 10 20 30 40 50 Qg GATE CHARGE nC Figure 7 Gate Charge Characteristics 100 T LLI a 5 Tj 25 C O Ts u 10 5 z Ty 100 C lt q gt lt Tj 125 C o E 1 0 001 0 01 0 1 1 10 100 1000 tay TIME IN AVALANCHE ms Figure9 Unclamped Inductive Switching Capability 200 100 zs ETSL TNTS ON 100 u
7. SS FAIRCHILD eer a El SEMICONDUCTOR FDMS85705 N Channel PowerTrench SyncFE 25 V 60 A 2 8 mO Features General Description B Max rps on 2 8 MQ at Vas 10 V lp 24 A This N Channel SyncFET M is produced using Fairchild Semiconductor s advanced PowerTrench process Advancements in both silicon and package technologies have M High performance technology for extremely low rps on been combined to offer the lowest rps oy while maintaining TM excellent switching performance by extremely low Junction to EEE E Ambient thermal resistance This device has the added benefit B RoHS Compliant of an efficient monolithic Schottky body diode April 2012 T M B Max DS on 3 3 mO at Ves 4 5 V Ip 22A Applications B Synchronous Rectifier for DC DC Converters B Telecom Secondary Side Rectification B High End Server Workstation Vcore Low Side Top Power 56 MOSFET Maximum Ratings TA 25 C unless otherwise noted Symbol Parameter Ratings Units Vos Drain to Source Voltage 25 V Ves Gate to Source Voltage 12 V Drain Current Continuous Package limited Tc 25 C 60 Ip Continuous Ta 25 C Note 1a 24 A Pulsed 100 Eas Single Pulse Avalanche Energy Note 3 45 mJ P Power Dissipation Tc 225 C 48 W E Power Dissipation Ta 25 C Note 1a 2 5 Ty TsTG Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Rojc Thermal
8. coSPARK MegaBuck SMART START TriFault Detect EfficentWax MICROCOUPLER Solutions for Your Success Ba ESBC MicroFET SPM ee cc ME MicroPak STEALTH r P MicroPak2 Super FETO WA Fairchild MillerDrive SuperSOT 3 aem Fairchild Semiconductor MotionMax SuperSOT 6 med FACT Quiet Series Motion SPM SuperSOT 8 Ultra FREET FACT mWSaver SupreMOS UniFET FAST OptoHiT SyncFET VOX FastvCore OPTOLOGIC Sync Lock VisualMax FETBench OPTOPLANAR svsre VoltagePlus FlashWriter GENERAL SS FPSM Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are device
9. nless otherwise noted NORMALIZED DRAIN TO SOURCE ON RESISTANCE 100 co e o e n e Ip DRAIN CURRENT A N PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 0 3 0 6 0 9 1 2 1 5 Vg DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 1 6 Ip 28 A 1 5 yas 10V 1 4 1 3 1 2 1 1 1 0 0 9 0 8 0 7 75 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure3 Normalized On Resistance vs Junction Temperature 100 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 80 T Vps 5V z lt 60 tc Ty 25 C O Ty 150 z 40 lt 5 a 20 55 C 0 1 0 1 5 2 0 2 5 3 0 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 2012 Fairchild Semiconductor Corporation FDMS8570S Rev D1 NORMALIZED DRAIN TO SOURCE ON RESISTANCE DS on DRAIN TO SOURCE ON RESISTANCE mo Is REVERSE DRAIN CURRENT A 4 5 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 3 6 Ves 2 5 V 1 8 Ves 45V Vos 35V 0 20 40 60 80 100 Ip DRAIN CURRENT A Figure2 Normalized On Resistance vs Drain Current and Gate Voltage PULSE DURATION 80 us DUTY CYCLE 0 5 MAX ID 28A N C A ao N O CO 2 3 4 5 6 7 8 9 1
10. om wi L339u sS guoue1 16Mog Jeuueu N SOZS8SINGS Typical Characteristics continued SyncFET Schottky body diode Characteristics Fairchild s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high tem parallel with PowerTrench MOSFET This diode exhibits similar perature and high reverse voltage This will increase the power characteristics to a discrete external Schottky diode in parallel in the device with a MOSFET Figure 14 shows the reverse recovery characteristic of the FDMS8570S 30 10 lt 25 Ty 125 C Z Lu 3 lends AI 20 t 10 lt O 45 di dt 300 A us T T 100 9C E S 10 c 10 lt 3 uj 5 wo 410 oc Ty 25 C 5 2 10 0 50 100 150 200 250 0 5 10 15 20 25 ee Vps REVERSE VOLTAGE V Figure 14 FDMS8570S SyncFET body Figure 15 SyncFET body diode reverse diode reverse recovery characteristic leakage versus drain source voltage 2012 Fairchild Semiconductor Corporation 6 www fairchildsemi com FDMS8570S Rev D1 i 1339u s guoue1 16Mog Jeuueu N SOZS8SINGS Dimensional Outline and Pad Layout
11. s Tv x in N NN r 10 I es v s r za are e S Lu lt N tc SiN nal m MN ai Ni MN 1 ms 4 THIS AREAIS Med si DSL SL 10 ms z LIMITED BY tpgion IE Tao 100 ms e SINGLE PULSE LEN EE amp 0 1 T 2 MAX RATED e th ay 5 Roja 125 C W s Moja pc Ta 25 C 0 01 Ecc and 0 01 0 1 1 10 100 Vps DRAIN to SOURCE VOLTAGE V Figure 11 Forward Bias Safe Operating Area 2012 Fairchild Semiconductor Corporation FDMS8570S Rev D1 10000 ee Ciss LL amp 1000 LLI 9 lt Coss E lt a 100 O Crss f 1MHz Vas 20 V 10 0 1 1 10 30 Vps DRAIN TO SOURCE VOLTAGE V Figure8 Capacitancevs Drain to Source Voltage 120 100 pee dias a oe Ves 10V 80 gt tc tc 2 O Z lt tc a zA Limited by Package 20 R jc 2 6 C W 25 50 75 100 125 150 To CASE TEMPERATURE C Figure 10 Maximum Continuous Drain Current vs Ambient Temperature 10000 SINGLE PULSE i 1000 Roja 125 C W O Ta 25 C ou E 100 Lu o 10 pas x ui a 1 E
12. s Ciss Input Capacitance 2825 pF Cose Output Capacitance ide Veg UM 662 pF Giss Reverse Transfer Capacitance 94 pF Rg Gate Resistance 0 8 Q Switching Characteristics ta on Turn On Delay Time 11 ns t Rise Time Vpp 13 V lp 24 A 4 ns fd off Turn Off Delay Time Ves 10 V Reen 6 Q 33 ns lr Fall Time 3 ns Qg Total Gate Charge Ves 0 V to 10V 42 nC Qg Total Gate Charge Vpp 13 V 22 nC Qgs Gate to Source Gate Charge lp 24 A 6 4 nC Qoa Gate to Drain Miller Charge 4 4 nC Drain Source Diode Characteristics M Ves 0V l5s 2A Note 2 0 6 0 8 Vsp Source to Drain Diode Forward Voltage V Ves 0 V ls 24 A Note 2 0 8 1 2 bi Reverse Recovery Time 22 ns lE 24 A di dt 300 A us Qir Reverse Recovery Charge 19 nC NOTES 1 Roja is determined with the device mounted on a FR 4 board using a specified pad of 2 oz copper as shown below Rojc is guaranteed by design while Roca is determined by the user s board design 2 Pulse Test Pulse Width lt 300 us Duty cycle lt 2 0 3 Eas of 45 mJ is based on starting Tj 25 C L 0 4 mH las 15 A Vpp 23 V Veg 10 V 100 test at L 0 1 mH Ing 23 8 A 2012 Fairchild Semiconductor Corporation FDMS8570S Rev D1 a 50 C W when mounted on a 1 in pad of 2 oz copper eo o Fano 2 b 125 C W when mounted on a minimum pad of 2 oz copper www fairchildsemi com wi 1339u sS 49u31 L1 MOd Jeuueu N S0Z7S8SIAQJ Typical Characteristics T 25 c u
13. s or systems which a are 2 intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from
14. tion 8 FDMS8570S Rev D1 Datasheet Identification Advance Information Preliminary First Production No Identification Needed Obsolete Rev 161 www fairchildSemi com w LL339UAS UUJ II MOJ PBUUBYD N SOZS8SINGS
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FAIRCHILD FDMS8570S Manual