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DIODES MMST2222A handbook

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1. 0 001 0 01 0 1 1 10 100 REVERSE VOLTS V Fig 1 Typical Capacitance 6 BASE CURRENT mA Fig 2 Typical Collector Saturation Region DS30080 Rev 1 2 3 of 3 MMST2222A www diodes com
2. Current Gain Bandwidth Product 300 MHz f 100 gt Vce 10V Ic 100nA Noise Figure NF 4 0 dB Rs 1 0kQ f 1 0kHz SWITCHING CHARACTERISTICS Delay Time ta 10 ns Vcc 30V Ic 150mA Rise Time tr 25 ns VBE off 0 5V IB1 15 Storage Time ts 225 ns Vcc 30V Ic 150mA Fall Time ty 60 ns lB1 Ia 15 Ordering Information Note 3 Device Packaging Shipping MMST2222A 7 SOT 323 3000 Tape amp Reel Notes 2 Short duration test pulse used to minimize self heating effect 3 For Packaging Details go to our website at http www diodes com datasheets ap02007 pdf Marking Information Product Type Marking Code YM Date Code Marking K3P Y Year ex N 2002 gt M Month ex 9 September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N R S alt U WwW Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 T 8 9 D DS30080 Rev 1 2 2of3 MMST2222A www diodes com INCORPORATED CAPACITANCE pF Vce COLLECTOR EMITTER VOLTAGE V
3. MMST2222A INCORPORATED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features e Epitaxial Planar Die Construction SOT 323 mplementary PNP T Availabl ype Available Dim Min Max e Ultra Small Surface Mount Package 9 23 1040 B 1 15 1 35 c 2 00 2 20 D 0 65 Nominal Mechanical Data E 0 30 0 40 e Case SOT 323 Molded Plastic e Case Material UL Flammability Rating 94V 0 H 180 2 20 e Moisture sensitivity Level 1 per J STD 020A J 0 0 0 10 e Terminals Solderable per MIL STD 202 K 0 90 1 00 Method 208 L 0 25 0 40 e Terminal Connections See Diagram M 0 18 e Marking See Page 2 K3P a 0 8 e Ordering amp Date Code Information See Page 2 Fn ee e Weight 0 006 grams approx Maximum Ratings Ta 25 C unless otherwise specified Characteristic Symbol MMST2222A Unit Collector Base Voltage VcBo 75 V Collector Emitter Voltage VcEO 40 V Emitter Base Voltage VEBO 6 0 V Collector Current Continuous Note 1 Ic 600 mA Power Dissipation Note 1 Pg 200 mW Thermal Resistance Junction to Ambient Note 1 Rosa 625 C W Operating and Storage and Temperature Range Tj TsTG 55 to 150 Note 1 Device mounted on FR 4 PCB 1 inch x 0 85 inch x 0 062 inch pad layout as shown on Diodes Inc suggested pad layout document AP02001 whi
4. ch can be found on our website at http www diodes com datasheets ap02001 pdf DS30080 Rev 1 2 1of3 MMST2222A www diodes com INCORPORATED Electrical Characteristics 25 unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS Note 2 Collector Base Breakdown Voltage V BR CBO 75 V Ic 104A le 0 Collector Emitter Breakdown Voltage V BR CEO 40 V 10 0 Emitter Base Breakdown Voltage V BR EBO 6 0 V le 10A Ic 0 nA Vcs 60V le 0 Collector Cutoff Current IcBo 10 uA Ves 60V le 0 Ta 150 C Collector Cutoff Current ICEX 10 nA Vce 60V VEB OFF 3 0V Emitter Cutoff Current lEBO 10 nA 3 0V Ic 0 Base Cutoff Current IBL 20 nA Vce 60V 3 0V ON CHARACTERISTICS Note 2 35 100uA Vce 10V 50 1 0 Vce 10V 75 10mA Vce 10V DC Current Gain hFE 100 300 150mA Vce 10V 40 500mA Vce 10V 50 10 Vce 10V Ta 55 C 35 150 Vce 1 0V Collector Emitter Saturation Voltage VCE SAT Pomi aa DMA Base Emitter Saturation Voltage VBE SAT 26 V 2 oe Tam SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8 pF 10V f 1 0MFz le 0 Input Capacitance Cibo 25 pF Ves 0 5V f 1 0MHz Ic 0 Vce 20 20

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