FAIRCHILD FDMC8884 Manual
Contents
1. 1000 t PULSE WIDTH s Figure 12 Single Pulse Maximum Power Dissipation www fairchildsemi com 13JSON 429911 J9MOd J9UUEU N 79888DIAQJ Typical Characteristics 25 unless otherwise noted 2 1 DUTY CYCLE DESCENDING ORDER D 0 5 ws z N 0 1 0 05 Y E ui 002 Pom aS 001 4 F i tc z 0 01 to NOTES SINGLE PULSE DUTY FACTOR D t4 t 125 X X Rosa TA 0 001 LL 1 10 10 10 10 1 10 100 1000 t RECTANGULAR PULSE DURATION sec Figure 13 Transient Thermal Response Curve 02012 Fairchild Semiconductor Corporation 5 www fairchildsemi com FDMC8884 Rev E3 134S0MW 429911 J9MOd 9UUEU N 79888DIAQJ Dimensional Outline and Pad Layout 3 30 0 10 30 10 C 2X PIN 1 QUADRANT SEATING PLANE PIN 1 IDENT OPTIONAL RO02. Input Capacitance V ET Py 513 685 pF Output Capacitance i a uu 2 110 150 Reverse Transfer Capacitance 76 115 pF Rg Gate Resistance 1 4 2 1 Q Switching Characteristics ta on Turn On Delay Time 6 12 ns i Rise Time Vpp 15 V Ip 9 0 A 2 10 ns ta off Turn Off Delay Time Vas 10 V Reen 6 Q 15 27 ns lr Fall Time 2 10 ns Q Total Gate Charge Vas 20Vto 10V 10 14 nC Vas 0 V to 4 5 V 5 0 7 0 nC Qs Total Gate Charge 1 8 nC Gate to Drain Miller Charge 2 2 nC Drain Source Diode Characteristics Ves 0 15 9 0 Note 2 0 86 1 2 V Source to Drain Diode Forward Voltage V SD 9 Vas 0V lg 1 6A Note 2 076 12 ly Reverse Recovery Time 13 18 ns Ip 9 0 A di dt 100 A us Reverse Recovery Charge i 3 10 nC NOTES 1 Rgja is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1 5 x 1 5 in board of FR 4 material is guaranteed by design while Roca is determined by the user s board design 2 Pulse Test Pulse Width 300 us Duty cycle 2 0 96 3 Eas Of 24 mJ is based on starting Tj 25 L 1 mH las 7 A Vpp 30 V Vas 10 V 100 test at 3 mH las 4 2012 Fairchild Semiconductor Corporation FDMC8884 Rev E3 53 C W when mounted on a 1 in pad of 2 oz copper b 125 C W w
3. N 4 6 8 0 Vas GATE TO SOURCE VOLTAGE V Figure4 On Resistance vs Gate to Source Voltage 100 lt Ves 0V 5 amp 10 150 2 2 z Tj 25 0 tc n 84 a 0 1 tc LLI T 0 01 55 0 001 0 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Current www fairchildsemi com 134S0MW 429911 J9MOd 9UUEU N 79888DIAQJ Typical Characteristics 25 unless otherwise noted Ip DRAIN CURRENT A 10 gt 8 1 S u 6 o tc 2 D 4 LE 2 gt 0 0 3 6 9 12 Qg GATE CHARGE nC Figure 7 Gate Charge Characteristics 20 lt 10 Z tc tc gt O T O 25 2 a T 100 oC
4. gt 4 Tj 125 C 1 0 01 0 1 1 10 tay TIME IN AVALANCHE ms Figure9 Unclamped Inductive Switching Capability 100 10 t 100 E INS B Es 1ms 1 gt THIS AREA IS Zo LIMITED BY roson Ss DOS 100 ms SINGLE PULSE NURSE 0 1 RATED MOS 2 S 125 C W jJ 0JA DC 25 0 01 0 01 0 1 1 10 100 Vps DRAIN to SOURCE VOLTAGE V Figure 11 Forward Bias Safe Operating Area 2012 Fairchild Semiconductor Corporation FDMC8884 Hev E3 PEAK TRANSIENT POWER W Ij DRAIN CURRENT 30 20 10 0 1000 Ciss T g Coss z t m O t t 9 100 Cis fz1MHz Ves z0V 50 0 1 1 10 30 Vps DRAIN TO SOURCE VOLTAGE V Figure8 Capacitance vs Drain to Source Voltage Limited by Package Rouc 6 6 C W 25 50 75 100 125 150 Te CASE TEMPERATURE Figure 10 Maximum Continuous Drain 1000 100 10 10 10 10 10 1 10 100 Current vs Case Temperature SINGLE PULSE R jA 125 C W TA 25
5. 15 BOTTOM VIEW OPTION A 2 37 MIN SYMM 2 15 MIN 0 65 __ e 4 um MIN RECOMMENDED LAND PATTERN 2012 Fairchild Semiconductor Corporation FDMC8884 Rev E3 3 30 0 10 3 0 10 C 2X 1 QUADRANT TOP VIEW 3 20 SIDE VIEW OPTIONAL DRAFT ANGLE MAY APPEAR ON ALL 4 SIDES OF OPTIONAL TIE BARS THE PACKAGE MAY APPEAR IN THESE AREAS o 3 00 ALL DIMENSIONS AS PER OPTION A UNLESS SPECIFIED BOTTOM VIEW OPTION B NOTES PACKAGE DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO 240 DIMENSIONS ARE IN MILLIMETERS DIMENSIONS AND TOLERANCES PER ASME Y 14 5M 1994 DIMENSIONS DOES NOT INCLUDE BURRS OR MOLD FLASH BURRS OR MOLD FLASH SHALL NOT EXCEED 0 10MM LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY m 6 www fairchildsemi com 134S0MW 429911 J9MOd 9UUEU N 7888DIAQJ sS tam FAIRCHILD EEE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool F PFS PowerTrench The Power Franchise AccuPower FRFET PowerXxS the AX CAP7M Global Power Resource M Programmable Active p wer BitSiC Green Bridge QFET virapehise Build it Now Green FPSTV QS CorePLUS M Green FPS e Ser
6. Ruc Thermal Resistance Junction to Case 6 6 C W HJA Thermal Resistance Junction to Ambient Note 1a 53 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMC8884 FDMC8884 MLP 3 3x3 3 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation FDMC8884 Rev E3 Www fairchildsemi com 134S0MW 5429911 J9MOd 9UUEU N 78880IAQJ Electrical Characteristics 25 unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage 250 uA Vas 20V 30 V ABVpss ee Ip 250 uA referenced to 25 22 mV C AT Coefficient Vps 24 V Ves 0 V 1 Zero Gate Voltage Drain Current A DSS 9 Tj 125 250 E less Gate to Source Leakage Current Ves 20 V Vps 0 V 100 nA On Characteristics VGS th Gate to Source Threshold Voltage Ves Vps lp 250 uA 1 4 1 9 2 5 V AVGs h Gate to Source Threshold Voltage 250 pA referenced to 25 C 6 AT Temperature Coefficient Ves 10 V 1 8 0 16 19 DS on Static Drain to Source On Resistance Vas 4 5 V 1 7 2 22 30 Vas 10V Ip 9 0 A Tj 125 22 30 JFS Forward Transconductance Vpp 5V lp 9 0A 24 S Dynamic Characteristics
7. A FAIRCHILD a SEMICONDUCTOR FDMC8884 N Channel Power Trench MOSFET 30 V 15 A 19 Features B Max DS on 19 at Ves 10 V lp 9 0A This B Max DS on 30 at Vas 4 5 V Ip 7 2 High performance technology for extremely low rps on B Termination is Lead free and RoHS Compliant MOSFET Maximum Ratings 25 unless otherwise noted General Description B oad switch in Notebook Top Bottom Pin 1 MLP 3 3x3 3 N Channel Application B High side in DC DC Buck Converters MOSFET B Notebook battery power management April 2012 is produced using Fairchild Semiconductor s advanced Power Trench process that has been especially tailored to minimize the on state resistance This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs Symbol Parameter Ratings Units Vps Drain to Source Voltage 30 V Vas Gate to Source Voltage 20 V Drain Current Continuous Package limited 25 15 Continuous Silicon limited 25 24 7 Continuous 25 Note 1 9 0 Pulsed 40 EAS Single Pulse Avalanche Energy Note 3 24 mJ p Power Dissipation Tc 25 18 W j Power Dissipation TA 25 Note 1a 2 3 Tj TsTG Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics
8. IN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to pro
9. hen mounted on a minimum pad of 2 oz copper 00000 eo 2 www fairchildsemi com 134S0W 5429911 J9MOd 9UUEU N 7L8880IAQJ Typical Characteristics 25 unless otherwise noted 40 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 30 20 10 Ip DRAIN CURRENT A 0 1 2 3 Vps DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 1 6 Ip 29 0A Ves 10 V 1 4 1 2 1 0 0 8 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 0 6 75 50 25 0 25 50 75 100 125 150 TJ JUNCTION TEMPERATURE Figure3 Normalized On Resistance vs Junction Temperature 40 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 30 2 O Z lt T 150 Ty 2 25 10 Tj 55 C 0 1 2 3 4 5 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 2012 Fairchild Semiconductor Corporation FDMC8884 Rev E3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 80 l DS on DRAIN TO SOURCE ON RESISTANCE 10 70 60 50 40 30 20 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 10 Ip DRAIN CURRENT A 20 Figure2 Normalized On Resistance vs Drain Current and Gate Voltage 9 0A PULSE DURATION 80 us DUTY CYCLE 0 5 MAX _ 25
10. ies Quiet Series EI CorePOWER M Gmax M RapidConfigure V TinyLogic M TM TM cup M c Lisa Current Transfer Logic M ISOPLANAR M saving our world 1mW W kW at a time E DEUXPEED Marking Small Speakers Sound Louder SignalWise Tin Aire Dual Cool and Better SmartMax M T EcoSPARK SMART START EfficentMax M MICROCOUPLER M Solutions for Your Success Se GRENT MicroFET SPM SerDes R STEALTH M FP MicroPak2 M SuperFET 4 Fairchild MillerDrive M SuperSOT M 3 E Fairchild Semiconductor MotionMax SuperSOT 6 s FACT Quiet Series Motion SPM M SuperSOT 8 Ultra FRFET M FACT mWSaver M SupreMOs UniFET FAST OptoHiT SyncFET VCX FastvCore OPTOLOGIC Sync Lock M EUN FETBench M OPTOPLANAR SYSTEM amp OU us FlashWriter GENERAL FPSIM Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THERE
11. ins final specifications Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete NOPARHTODBOHOR Semiconductor The datasheet is for reference information only First Production Rev 161 2012 Fairchild Semiconductor Corporation FDMC8884 Rev E3 www fairchildsemi com 134S0IN 5499911 1 J9uUEU N 7 8882IAQJ
12. tect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design M Datasheet conta
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FAIRCHILD FDMC8884 Manual