FAIRCHILD FDMA1029PZ Manual
Contents
1. Rosa T Rosa 173 C W wW Z E z 0 2 4 m u o mo 0 1 P pk u 05 H ax uz Ng J Wi lt I Sh Y O 2 0 01 bo l l Wee E 0 0001 0 001 0 01 0 1 1 10 100 1000 t TIME sec Figure 11 Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design FDMA1029PZ Rev B3 W LAASOW QY9USILISMOd JUUEY O d ENC Zd6c0LVINGA Dimensional Outline and Pad Layout KO 0 10 C 2X 1 80 0 80 PT A YAW 50 1 non LAY 2 25 Z i hk 0 42 0 10 RECOMMENDED LAND PATTERN SEATING SIDE VIEW 1 64 0 10 BOTTOM VIEW NOTES A CONFORMS TO JEDEC REGISTRATION MO 229 VARIATION VCCC EXCEPT AS NOTED B DIMENSIONS ARE IN MILLIMETERS C DIMENSIONS AND TOLERANCES PER ASME Y14 5M 1994 NON JEDEC DUAL DAP E DRAWING FILE NAME MLPO6J rev3 FDMA1029PZ Rev B3 W LAASOW QY9USILISMOd Jouueu g IENA Zd6c0LVINGSA haa FAIRCHILD EE CT SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks Auto SPM F PFS PowerTrench The Power Franchise Build it Now2. lp DRAIN CURRENT A Ves GATE SOURCE VOLTAGE V LL 0 02 NEN Ern a Ty Ta P Roa Duty Cycle D t t e INGLE PULSE 1000 f 1MHz Ves 0V 800 T amp E 600 2 dq gt Q 400 o 4 o 200 0 fi L 0 2 4 6 8 10 12 14 0 4 8 12 16 20 Q GATE CHARGE nC Vps DRAIN TO SOURCE VOLTAGE V Figure 7 Gate Charge Characteristics Figure 8 Capacitance Characteristics 100 50 FTH c SINGLE PULSE 15515 Roya 173 C W c Rps oy LIMIT t 100us m 40 Ta 25 C 1 z TIN 10ms S Q ple BREN lina Eu 10s E DC z u lt Ves 4 5V 20 0 1 SINGLE PULSE x Rej 173 C W ui E Ta 25 C 10 a 0 01 0 1 1 10 100 LL Vps DRAIN SOURCE VOLTAGE V 9 0 0001 0 001 0 01 0 1 1 10 100 1000 Figure 9 Maximum Safe Operating Area Figure 10 Single Pulse Maximum Power Dissipation 1 a w o k E peo Rosa t r t
3. Forward Ves 7 OV la 2 1 1A Note 2 V Voltage iode Reverse Recovery Charge dle dt 100 A us nC FDMA1029PZ Rev B3 W LAASOW QY9USILASMOd JUUEYO d IENA Zd6c0LVINGA Notes 1 Roya is determined with the device mounted on a 1 in oz copper pad on a 1 5 x 1 5 in board of FR 4 material Rgjc is guaranteed by design while Rgja is determined by the user s board design a Raya 86 C W when mounted on a 1 in pad of 2 oz copper 1 5 x 1 5 x 0 062 thick PCB For single operation b c Roja 173 C W when mounted on a minimum pad of 2 oz copper For single operation Rega 69 C W when mounted on a 1 in pad of 2 oz copper 1 5 x 1 5 x 0 062 thick PCB For dual operation d Raya 151 C W when mounted on a minimum pad of 2 oz copper For dual operation a 86 C W when Lr b 173 C W when c 69 C W when d 151 C W when mounted on a 1 mounted on a mounted on a 1 in mounted on a in pad of 2 oz minimum pad of 2 FR pad of 2 oz copper minimum pad of 2 oz copper OZ copper copper ooooOo 00000 00000 00000 00000 oooSo ooooo OGOOGO 2 Pulse Test Pulse Width lt 300 us Duty Cycle lt 2 0 3 The diode connected between the gate and source serves only as protection against ESD No gate overvoltage rating is implied FDMA1029PZ Rev B3 W Typical Characteristics ZO 2 0V Ip DRAIN CURRENT A 99 1 5V 0 0 4 0 8 1 2 1 6 2 Vps DR
4. AIN SOURCE VOLTAGE V Figure 1 On Region Characteristics 1 5 Ip 3 1A 1 4 7 Ves 4 5V Roson NORMALIZED DRAIN SOURCE ON RESISTANCE 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure 3 On Resistance Variation with Temperature lp DRAIN CURRENT A po 0 0 5 1 1 5 2 2 5 Ves GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics Roson NORMALIZED DRAIN SOURCE ON RESISTANCE 0 6 2 3 4 Ibp DRAIN CURRENT A Figure 2 On Resistance Variation with Drain Current and Gate Voltage 0 2 Roson ON RESISTANCE OHM 0 04 0 2 4 6 8 10 Nos GATE TO SOURCE VOLTAGE V Figure 4 On Resistance Variation with Gate to Source Voltage 100 Ves OV x 10 Z tr 1 23 o z Ta 125 C g 0 1 a Lu 25 C 2 001 S 55 C gt C 0 001 O 0 0001 0 0 2 0 4 0 6 0 8 1 1 2 1 4 1 6 Vsp BODY DIODE FORWARD VOLTAGE V Figure 6 Body Diode Forward Voltage Variation with Source Current and Temperature FDMA1029PZ Rev B3 W LAASOW QY9USILISMOd JUUBY O d IENA Zd6c0LVINGA Typical Characteristics
5. ATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed applic
6. FRFET PowerxS the 5 CorePLUS Global Power Resource M Programmable Active Droop wer CorePOWER Green FPS QFET franchise CROSSVOLT Green FPS e Series DS TM TinyBoost CTL Gmax Quiet Series TinyBuck Current Transfer Logic V GTO RapidConfigure TinyLogic EcoSPARK IntelliMAX c TINYOPTO EfficentMax ISOPLANAR pag TinyPower EZSWITCH MegaBuck Saving our world 1mW W kW atatime TinyPWM idi MICROCOUPLER SmartMax TinyWire MicroFET SMART START TriFault Detect MicroPak SPM TRUECURRENT MillerDrive STEALTH uSerDes Fairchild MotionMax SuperFET NG Fairchild Semiconductor Motion SPM SuperSOT 3 Des FACT Quiet Series OPTOLOGIC SuperSOT 6 UHC FACT OPTOPLANAR SuperSOT 8 Ultra FRFET FAST SupreMos UniFET FastvCore SyncFET VCX M FETBench Sync Lock VisualMax FlashWriter ere Nu xs FPS Power SPM SYSTEM GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFIC
7. ation and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later Preliminary First Production date Fairchild Semiconductor reserves the rig
8. emiconductor Corporation FDMA1029PZ Rev B3 W lp LAASOW 4 U9U94 J19Mog JPUUEYD d IENA Zd6cOLVINGSA Electrical C haracte ristics T 25 C unless otherwise noted Symbol Test Conditions min Typ wes vni Off Characteristics BVpss Drain Source Breakdown Voltage Vos 0 V lp 250 uA ol ie V ABVbss Breakdown Voltage Temperature lp 250 uA Referenced to 25 C 49 mvV C AT Coefficient Ipss Zero Gate Voltage Drain Current Vos 16 V Ves 0V ke uA lass Gate Body Leakage Vos 2 12V Vps 0V 30 uA On Characteristics Note 2 Vasti Gate Threshold Voltage Vos Ves lp 250 uA 0 6 1 0 15 v AVGstth Gate Threshold Voltage lb 250 uA Referenced to 25 C A mvV C AT Temperature Coefficient Roson Static Drain Source Ves 4 5 V Ip 3 1A 60 95 ma On Resistance Ves2 2 5V Ip 2 5A 88 141 Vas 4 5 V lp 2 3 1 A Ty 125 C 87 140 Ors Forward Transconductance Vps 10V Ip 3 1A 3 S Dynamic Characteristics Input Capacitance Vos 8 10 V Output Capacitance f 1 0 MHz Reverse Transfer Capacitance Switching Characteristics Note 2 tion Turn On Delay Time Voo 10 V lp 14A ns jn Turn On Rise Time Ves 4 5 V Ree 6 Q ns lator Turn Off Delay Time ns t Turn Off Fall Time ns Qg Total Gate Charge Vps 10 V l nC Qu Gate Source Charge Ves 4 5 V nC Qaa Gate Drain Charge nC Maximum Continuous Source Drain Diode Forward Current A Source Drain Diode
9. ht to make changes at any time without notice to improve design se ati Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed FUIEPTOGUONOR make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Notin Proauction Semiconductor The datasheet is for reference information only Rev 140 FDMA1029PZ Rev B3 W LAASOWN U2Uu984 J49MOog JOUULYD d IENA Zd6Z01 VINOA
10. ss FAIRCHILD EE SEMICONDUCTOR May 2009 FDMA1029PZ Dual P Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package m 3 1 A 20V Roson 95 MA Ves 4 5V solution for the battery charge switch in cellular handset Roson 141 MQ Ves 2 5V and other ultra portable applications It features two independent P Channel MOSFETs with low on state resistance for minimum conduction losses When B Low profile 0 8 mm maximum in the new package MicroFET 2x2 mm B HBM ESD protection level 2 5kV Note 3 d fo connected in the typical common source configuration bi directional current flow is possible m RoHS Compliant The MicroFET 2x2 package offers exceptional thermal E Free from halogenated compounds and antimony performance for its physical size and is well suited to oxides linear mode applications PIN 1 1 G1 D2 a si EM EM G1 G2 D1 G2 S2 D2 S2 MicroFET 2x2 Absol ute Maxi mum Rati ngs Taz25 C unless otherwise noted Symbol Parameter Ratings Units Drain Current Continuous Note 1a A Pp Power Dissipation for Single Operation Note 1a W Note 1b 0 7 Ty Tere Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Rosa Thermal Resistance Junction to Ambient Note 1c Package Marking and Ordering Information 029 FDMA1029PZ 8mm 3000 units 2009 Fairchild S
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FAIRCHILD FDMA1029PZ Manual