FAIRCHILD FDMA7628 Manual
Contents
1. 4 5 5000 O 36 Ciss 4 gt esse ee ee a 1000 LL o Ww 2 7 a fc Z Coss 2 OQ 18 O O q 100 LT Ciss lu O 09 o fz1MHz Qo A Vas 0V gt 0 0 10 0 3 6 9 12 15 18 0 1 1 10 20 Qy GATE CHARGE nC Vps DRAIN TO SOURCE VOLTAGE V Figure 7 Gate Charge Characteristics Figure8 Capacitancevs Drain to Source Voltage 100 1000 s A UL P ng SU TS ui SINGLE PULSE S 10 fo tel st 100 us Rega 180 CIW Fim z T hJ N ou o Ww w S LS x 4 Fr TA E 25 C oc NNI bi SL 1 ms gt 2 4 Pris Polis p 10 z 7 THIS AREA IS ST ctt 10 ms z z LIMITED BY sys ts H lt Ds on 3 SMS i d 100 ms a SINGLE PULSE NNUS 4 6 0 1 T MAX RATED lis Roya 180 C W s 10s E mE TA 25 C ii 0 1 0 01 0 01 0 1 1 10 100 10 10 10 10 1 10 100 1000 Vps DRAIN to SOURCE VOLTAGE V t PULSE WIDTH sec Figure 9 Forward Bias Safe Figure 10 Single Pulse Maximum2. TriFault Detect EfficentMax MICROCOUPLER Solutions for Your Success 8 ESBC MicroFET SPM inl MicroPak STEALTH rm MicroPak2 SuperFET9 Fairchild MillerDrive M SuperSOT M 3 Qu Fairchild Semiconductor MotionMax SuperSOT 6 eue FACT Quiet Series Motion SPM SuperSOT 8 Ultra FRFET T FACT mWSaver SupreMOS UniFET FAST OptoHiT SyncFET VCX FastvCorgiM OPTOLOGIC Sync Lock VisualMax FETBench OPTOPLANAR syste pe ais ts FlashWriter GENERAL SS FPS Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 intended f
3. 2012 Fairchild Semiconductor Corporation 3 www fairchildsemi com FDMA7628 Rev C Typical Characteristics 1 25 c unless otherwise noted NORMALIZED DRAIN TO SOURCE ON RESISTANCE Ip DRAIN CURRENT A lp DRAIN CURRENT A 54 I Vas 4 5 V Vas 1 8 V 45 36 27 18 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 0 0 5 1 0 1 5 2 0 2 5 3 0 Vps DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 1 6 Ip 29 4A Vas 4 5 V 1 4 1 2 1 0 0 8 0 6 75 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure 3 Normalized On Resistance vs Junction Temperature 54 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX Vps 5V Ty 55 C 0 5 1 0 1 5 2 0 2 5 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 2012 Fairchild Semiconductor Corporation FDMA7628 Rev C NORMALIZED DRAIN TO SOURCE ON RESISTANCE l DS on DRAIN TO SOURCE ON RESISTANCE mo Is REVERSE DRAIN CURRENT A 100 Ves 0V 10 Ty 125 C 1 Ty 25 C 0 1 0 01 Ty 55 C 0 001 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 0 9 18 27 36 45 54 Ip DRAIN CURRENT A Figure2 Normalized On Resistance vs Drain Current and Gate Voltage PULSE DURATION 80 us ID 9 4A DUTY C
4. Cres Reverse Transfer Capacitance 122 185 pF Rg Gate Resistance 1 9 Q Switching Characteristics ta on Turn On Delay Time 9 17 ns t Rise Time Vpp 10 V Ip 9 4 A 6 11 ns ta off Turn Off Delay Time Ves 4 5 V Reen 6 O 37 58 ns lr Fall Time 6 11 ns Total Gate Charge Vas20Vto4 5V 17 5 nC Q Total Gate Charge Vas 0 V to 2 5 V 10 0 nC 9 Total Gate Charge Vas 0 V to 1 8 V Vpp 10 V 7 4 nC Total Gate Charge Vas 0 Vto 1 5 V lp 9 4 A 6 2 nC Qgs Gate to Source Charge 1 7 nC Qod Gate to Drain Miller Charge 2 nC Drain Source Diode Characteristics Is Maximum Continuous Drain Source Diode Forward Current 2 0 A Vsp Source to Drain Diode Forward Voltage Ves 0 V l s 2 0 A Note 2 0 63 1 2 V t Reverse Recovery Time 16 29 ns fr Ed lc 9 4 A di dt 100 A us Qr Reverse Recovery Charge 5 10 nC 2012 Fairchild Semiconductor Corporation FDMA7628 Rev C www fairchildsemi com LIASON gU9U3ILMOd p o d s A G jouueua2 N ejPurs 8z9ZVINGS NOTES 1 Roya is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1 5 x 1 5 in board of FR 4 material Rojc is guaranteed by design while Roja is determined by the user s board design a 65 C W when mounted b 180 C W when mounted on a on a 1 in pad of 2 oz copper minimum pad of 2 oz copper ooooQ oo o ono 2 Pulse Test Pulse Width 300 us Duty cycle 2 096 LAASOW 4 U2U91L19MOd payloads A F jauUeYD N erDurs 8297 VINO
5. Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications may change in any manner without notice Advance Information Formative In Design Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TEM Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete NOE in Progucthon Semiconductor The datasheet is for reference information only
6. Preliminary First Production Rev 161 www fairchildsemi com LAASOW gu2ue1LIemod peuroeds A G jaouueu2 N ejPBurs ez9 vINd3
7. 1 05 R EE i S 2 1 35 0 50 Y 0 95 1 05 SS ee 0 66 nm i NA S RO K el yo E S 24 E 20 35 6X 0 48 KK es 0 65 0 25 i 1 5 0 05 C BOTTOM VIEW RECOMMENDED LAND PATTERN OPT 2 NOTES A DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO 229 DATED AUG 2003 B DIMENSIONS ARE IN MILLIMETERS C DIMENSIONS AND TOLERANCES PER ASME Y 14 5M 1994 2012 Fairchild Semiconductor Corporation 6 www fairchildsemi com FDMA7628 Rev C LIASON 4 u2ueL1emod peuroeds A G jouueua2 N ejPurs 8z9ZVINGS 2012 Fairchild Semiconductor Corporation FDMA7628 Rev C ai wares nse it FAIRCHILD TE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool F PFS PowerTrench The Power Franchise AccuPower FRFET PowerxS the e AX CAP Global Power Resources Programmable Active Droop wer BitSic Green Bridge QFET rirapehise Build it Now Green FPS QS cH CorePLUS Green FPS e Series Quiet Series a AY plica Gmax RapidConfigure TinyLogic R V L M TM TM GT Intel MAX C i AM Current Transfer Logic M ISOPLANAR Saving our wuriu 1MW W kW at a time eG DEUXPEED Marking Small Speakers Sound Louder SignalWise SOM Dual Cool and Better SmartMax Taco EcoSPARK MegaBuck SMART START
8. Operating Area Power Dissipation 2 1 DUTY CYCLE DESCENDING ORDER E D 0 5 E 0 2 z3 I 0 1 DS 0d 0 05 E o 0 02 a2 0 01 Noa c c SINGLE PULSE NOTES Sro z o DUTY FACTOR D ti t RJA 180 CW PEAK T Ppy X Zoya X Roja TA 0 001 10 10 10 10 1 10 100 1000 t RECTANGULAR PULSE DURATION sec Figure 11 Junction to Ambient Transient Thermal Response Curve 2012 Fairchild Semiconductor Corporation FDMA7628 Rev C www fairchildSemi com LIASON guU LMOd p o d s A G jouueua2 N ejPBurs ez9 vINd3 Dimensional Outline and Pad Layout j L 0 20 amp x0 15 C ERE cauto 1 00 No Traces or Vias 2X B 6 4 Allowed in this Area 3 1 1 35 1 05 Z 2 00 i SS J 230 ff PS e ee cc AS ri x 0 15 C i o PIN 1 LOCATION TOP VIEW X 0 68 TYP ei 0 40 TYP RECOMMENDED LAND PATTERN OPT 1 0 8 MAX 0 10 C i Tak 1 1 I E 0 08 C oo iy 000 C SEATING SIDE VIEW PLANE mi a 0 15 lt 00 0 45 agit 0 30 ja 0 20 PIN 1 IDENT 100 _ N on 100 BE N 0 66 eX ND 0 56 m i
9. YCLE 0 5 MAX T 25 C 0 9 1 8 2 7 3 6 4 5 Ves GATE TO SOURCE VOLTAGE V Figure 4 On Resistance vs Gate to Source Voltage 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Current www fairchildsemi com LIASON 4 u2ueL1emog peiuroeds A G jouueu2 N ejPurs 8z9ZVINGS Typical Characteristics 1 25 c unless otherwise noted
10. dth Quantity 104 FDMA7628 MicroFET 2X2 7 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDMA7628 Rev C LIASON guU LMOd Ppaijideds A G jouueu2 N ejPurs 8z9ZVINGS Electrical Characteristics r7 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250 HA Veg O V 20 V BEMbSs jevesnoown Vonage temperate Ip 250 pA referenced to 25 C 15 mV C ATy Coefficient loss Zero Gate Voltage Drain Current Vps 16 V Ves 0V 1 uA less Gate to Source Leakage Current Ves 8 V Vps 0 V 100 nA On Characteristics Vasith Gate to Source Threshold Voltage Vas Vps lp 250 uA 0 4 0 6 1 0 V AV sith Gate to Source Threshold Voltage 7 E TATUS Temperature Coeficient Ip 250 LA referenced to 25 C 3 mV C Vas 4 5 V lp29 4A 11 3 14 5 Vas 2 5 V lp2 83A 12 7 18 2 DS on Static Drain to Source On Resistance tes A ADEA E mQ Vas 1 5 V Ip 6 2A 18 3 32 3 Vas 4 5 V Ip 2 9 4 A T 125 C 14 7 18 3 JFS Forward Transconductance Vpp 5V Ip 2 9 4 A 56 S Dynamic Characteristics Ciss Input Capacitance T EY ay 1260 1680 pF Cre Output Capacitance E RE VISIT E D 180 240 pF
11. ea are FAIRCHILD e a a l SEMICONDUCTOR May 2012 FDMA7628 Single N Channel 1 5 V Specified PowerTrench MOSFET 20 V 9 4 A 14 5 mO Features General Description B Max rps on 14 5 MO at Veg 4 5 V Ip 2 9 4 A This Single N Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to aM 18 2 mO at Veg 2 5 V Ip 8 3 A ee ES DS on Mn VOS p optimize the DS ON Ves 1 5 V on special MicroFET B Max DS on 23 3 mO at Ves 1 8 V Ip 7 3A leadframe B Max DS on 32 3 mQ at Ves 1 5 V Ip 6 2A B Low Profile 0 8 mm maximum in the new package MicroFET Applications 2x2 mm B Li lon Battery Pack B DC DC Buck Converters B RoHS Compliant Bottom Drain Contact Source D D S MicroFET 2X2 Bottom View MOSFET Maximum Ratings T 25 c unless otherwise noted Symbol Parameter Ratings Units Vos Drain to Source Voltage 20 V Ves Gate to Source Voltage 8 V Io Continuous Ta 25 C Note 1a 9 4 Pulsed 54 p Power Dissipation TA225 C Note 1a 1 9 W B Power Dissipation Ta 25 C Note 1b 0 7 Ty Terc Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Roa Thermal Resistance Junction to Ambient Note 1a 65 oC AN Roya Thermal Resistance Junction to Ambient Note 1b 180 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Wi
12. or surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized
Download Pdf Manuals
Related Search
FAIRCHILD FDMA7628 Manual