FAIRCHILD FDD86110 Manual
Contents
1. D t t PEAK T Ppy X Zouc X Rouc Tc 0 01 LE ILI ti 10 10 10 10 10 1 t RECTANGULAR PULSE DURATION sec Figure 13 Junction to Case Transient Thermal Response Curve 2011 Fairchild Semiconductor Corporation FDD86110 Rev C www fairchildsemi com LAASOW 4 U9u91119MOg JSUUBYD N 01198003 Eee aera FAIRCHILD CE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks LAASOW 4 U9u91119MOg UUEY I N 0LL98AAA 2Cool FPS PDP SPM The Power Franchise AccuPower F PFS Power SPM the Auto SPM FRFET PowerTrench p wer AX CAP Global Power ResourceS PowerXS M v iiranrhise y Bitsic Green FPS Programmable Active Droop E Build it Now Green FPS e Series QFET M ipd CorePLUS Gmax QSM e CorePOWER GTO M Quiet Series EX D CUN CROSSVOLT IntelliMAX RapidConfigure mid CTL ISOPLANAR eM ur Current Transfer Logic Marking Small Speakers Sound Louder 7 LL si DEUXPEED and Better Saving our world 1mW W kW at a time Te eco Dual Cool MegaBuck SignalWise TriFault Detect EcoSPARK MICROCOUPLER SmartMax TBUECURBENT EfficentMax MicroFET SMART START SerDes ESBC MicroPak Solutions for Your Success S MicroPak2 SPM2. Forward Voltage vs Source Current www fairchildsemi com LAASOW 4 U9u91119MOg UUEY I N 01198003 Tl 2 z Typical Characteristics 1 25 c unless otherwise noted m o 5000 e S i e lt Ciss H g 1000 gt 9 amp z LLI 5 E Coss oO s D amp 100 Oo Lr X z Lu O d fz1MHz Y E Ves 0V Ciss 10 D 0 5 10 15 20 25 0 1 1 10 100 Qg GATE CHARGE nC Vps DRAIN TO SOURCE VOLTAGE V zi Figure 7 Gate Charge Characteristics Figure8 Capacitance vs Drain to Source Voltage y Tl m 100 80 T e Se 60 7 T 1 nx LLI
3. Reen 6 Q 19 35 ns lr Fall Time 3 9 10 ns Qg Total Gate Charge Vas 0 Vto 10V 25 35 nC Qgs Gate to Source Charge m ea 7 1 nC Qaod Gate to Drain Miller Charge 5 2 nC Drain Source Diode Characteristics m Vas20V las212 5A Note 2 0 80 1 3 V V Source Drain Diode Forward Voltage SD i Vas 0V lg 2 6A Note 2 072 12 t Reverse Recovery Time 52 83 ns fr Y Ie 12 5 A di dt 100 A us Qu Reverse Recovery Charge 60 96 nC Notes 1 Roya is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins Roc is guaranteed by design while Rey is determined by the user s board design 8 40 C W when mounted on a 1 in pad of 2 oz copper b 96 C W when mounted on a minimum pad LAASOW 4 U9u91119MOg UUEY I N 01198003 2 Pulse Test Pulse Width 300us Duty cycle lt 2 0 3 Starting Tj 25 C L 0 3 mH las 30A Vpp 90 V Veg 10 V 2011 Fairchild Semiconductor Corporation 2 www fairchildsemi com FDD86110 Rev C Typical Characteristics r7 25 c unless otherwise noted 60 gs 5 5 V T 45 PULSE DURATION 80 us ui DUTY CYCLE 0 5 MAX C 30 O z S Q 15 8 0 0 1 2 3 4 5 Vps DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 2 0 Lu Z 18 E d Vas 10 V V o 1 6 Lu oe
4. A FAIRCHILD C SEMICONDUCTOR FDD86110 N Channel PowerTrench MOSFET 100 V 50 A 10 2 mQ Features m Max rps on 10 2 MQ at Veg 10 V Ip 12 5 A W Max rps on 16 MQ at Veg 6 V Ip 9 8A B 100 UIL tested B RoHS Compliant October 2011 General Description This N Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance Application B DC DC Conversion LAASOW 4 U9u91119MOg UUEY I N 01198003 D G G D PAK TO 252 S MOSFET Maximum Ratings 1 25 C unless otherwise noted Symbol Parameter Ratings Units Vos Drain to Source Voltage 100 V Ves Gate to Source Voltage 20 V Drain Current Continuous Package limited Tes25 C 50 Continuous Silicon limited Tc 225 C 80 A Continuous TA 25 C Note 1a 12 5 Pulsed 60 EAS Single Pulse Avalanche Energy Note 3 135 mJ p Power Dissipation Tg 225 C 127 W j Power Dissipation Tas 250 Note 1a 3 1 Ty TsTG Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Rouc Thermal Resistance Junction to Case 0 98 CN Roa Thermal Resistance Junction to Ambient Note 1a 40 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86110 F
5. DD86110 D PAK TO 252 13 12 mm 2500 units 2011 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDD86110 Rev C Electrical Characteristics Tj 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250 HA Veg O V 100 V ABVpss Breakdown Voltage Temperature Ip 250 uA referenced to 25 C 72 mvV C ATy Coefficient Ipss Zero Gate Voltage Drain Current Vps 80 V Veg 0 V 1 LA lass Gate to Source Leakage Current Ves 20 V Vps 0V 100 nA On Characteristics Vasith Gate to Source Threshold Voltage Ves Vps lp 250 HA 2 2 8 4 V Arom ARO EEEa vole Ip 250 uA referenced to 25 C 10 mV C AT j Temperature Coefficient Vas 10 V Ip 12 5 A 8 5 10 2 DS on Static Drain to Source On Resistance Ves 6 V Ip 9 8 A 11 3 16 mQ Vas 10 V Ip 12 5A Ty 125 C 15 18 Jes Forward Transconductance Vps 10 V Ip 12 5 A 38 S Dynamic Characteristics Gigs Input Capacitance T BuU a 1702 2265 pF Oois Output Capacitance i a T E 379 505 pF Greg Reverse Transfer Capacitance 17 30 pF Rg Gate Resistance 0 5 Q Switching Characteristics ta on Turn On Delay Time 12 20 ns i Rise Time Vpp 50 V lp 12 5 A 5 4 10 ns la off Turn Off Delay Time Ves 10 V
6. H ree mie a z s ss S Ty 25 C o 40 T i Tj 100 C z u z lt Limited by Package Ves 2 6 V a l m s Tj 125 C een j Rouc 0 98 C W 1 0 0 001 0 1 1 10 100 25 50 75 100 125 150 tay TIME IN AVALANCHE ms Tc CASE TEMPERATURE C Figure9 Unclamped Inductive Figure 10 Maximum Continous Drain Current Switching Capability vs Case Temperature 10000 ee s SINGLE PULSE c Rouc 0 98 C W T Te 25 C E o 100 us tc 1000 o THIS AREA IS ERA 9 z LIMITED BY roson VIN 5 SINGLE PULSE MIN 9 Ty MAX RATED ss tms lt o y am 1 Ryc 0 98 C W ee 100 Tc 225 C hl Q Epc 0 5 jd l fee Esp pep i 50 z 0 1 1 10 100 400 10 10 10 10 10 1 Vps DRAIN to SOURCE VOLTAGE V t PULSE WIDTH sec Figure 11 Forward Bias Safe Figure 12 Single Pulse Maximum Operating Area Power Dissipation 2011 Fairchild Semiconductor Corporation 4 www fairchildsemi com FDD86110 Rev C Typical Characteristics 1 25 c unless otherwise noted 2 DUTY CYCLE DESCENDING ORDER 1 EN ES 5 D 0 5 cc 3 E 0 2 Y a 9 L us jen Lu NS OT 002 g 0 01 t4 o BA SINGLE PULSE to za o R jc 0 98 C W NOTES DUTY FACTOR
7. HE 3 o MillerDrive STEALTH apes Fairchild MotionMax SuperFET UHC Fairchild Semiconductor Motion SPM SuperSOT 3 Male SNe FACT Quiet Series mWSaver SuperSOT 6 UniFET FACT OptoHiT SuperSOT 8 VOX FAST OPTOLOGIC SupreMOS VisualMax FastvCore OPTOPLANAR SyncFET VoltagePlus FETBench j Sync Lock xs FlashWriter SYSTEM GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with i
8. N 1 4 lt q LL g 12 O 2 20 O 1 0 O LT 08 tc a 0 6 75 50 25 0 25 50 100 125 150 Ty JUNCTION TEMPERATURE C Figure 3 Normalized On Resistance vs Junction Temperature 60 PULSE DURATION 80 us DUTY CYCLE 0 5 MAX z 45 za Lu tc C 30 O Z Ty 25 C A 15 n Ty 2 55 C 0 2 3 4 5 6 7 Vas GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics 2011 Fairchild Semiconductor Corporation FDD86110 Rev C NORMALIZED DRAIN TO SOURCE ON RESISTANCE Is REVERSE DRAIN CURRENT A DS on DRAIN TO SOURCE ON RESISTANCE mo PULSE DURATION 80 us DUTY CYCLE 0 5 MAX 0 15 30 45 60 Ip DRAIN CURRENT A Figure2 Normalized On Resistance 50 40 30 20 10 vs Drain Current and Gate Voltage B PULSE DURATION 80 us Ip2 125A DUTY CYCLE 0 5 MAX Ty 2 259C 4 5 6 7 8 9 10 Ves GATE TO SOURCE VOLTAGE V Figure 4 On Resistance vs Gate to 100 0 1 0 01 0 001 Source Voltage Ves 0V Ty 150 C 0 0 0 2 0 4 Vsp BODY DIODE FORWARD VOLTAGE V 0 6 0 8 1 0 1 2 Figure6 Sourceto Drain Diode
9. ess to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design M Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete INDETDTPTOGUGHOR Semiconductor The datasheet is for reference information only Rev 158 6 www fairchildsemi com First Production 2011 Fairchild Semiconductor Corporation FDD86110 Rev C
10. nstructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide acc
Download Pdf Manuals
Related Search
FAIRCHILD FDD86110 Manual