FAIRCHILD FDD8796/FDU8796 Manual
Contents
1. ul 2 P PULSE DURATION 80s E g DUTY CYCLE 0 5 MAX o ul ul ac o ul zZz z N 2 ul 8 oc z b o Ee B z a 2 A 06 80 40 0 40 80 120 160 200 Ty JUNCTION TEMPERATURE C Vos GATE TO SOURCE VOLTAGE V Figure 3 Normalized On Resistance vs Junction Figure 4 On Resistance vs Gate to Source Temperature Voltage 100 PULSE DURATION 80s T Ves 0V T DUTY CYCLE 0 5 MAX E R3 Z 10 E uw Z g E Ty 175 C 4 2 E O 1 o Ez z 4 z A 0 1 W a B ee U 0 01 W 2 4 1E 3 0 0 0 3 0 6 0 9 1 2 Ves GATE TO SOURCE VOLTAGE V Vsp BODY DIODE FORWARD VOLTAGE V Figure 5 Transfer Characteristics Figure 6 Source to Drain Diode Forward Voltage vs Source Current FDD8796 FDU8796 Rev B 3 www fairchildsemi com LAASOW 49u91 L1 MOd JouUEU2 N 9678n03 9628003 Typical Characteristics T 25 C unless otherwise noted 50 4000 Ciss g H om o 5 2 1000 B J Coss S i 3 a o o z Crss i lt E S f 1Mkz 2 V OV o 2 100 0 10 20 30 40 0 1 1 10 30 Qg GATE CHARGE nC Vps DRAIN TO SOURCE VOLTAGE V Figure 7 Gate Charge Characteristics Figure 8 Capacitance vs Drain to S2. FAIRCHILD SEMICONDUCTOR FDD8796 FDU8796 N Channel PowerTrench MOSFET 25V 35A 5 7mO General Description This N Channel MOSFET has been designed specifically to improve the overall efficiency of DC DC converters using either synchronous or conventional switching PWM controllers It has been optimized for low gate charge low DS on and fast switching speed March 2006 Features W Max rps on 5 7mQ at Veg 10V Ip 35A W Max rps on 8 0mQ at Veg 4 5V Ip 35A m Low gate charge Qg 10 37nC Typ Vas 10V W Low gate resistance W Avalanche rated and 100 tested Application W Vcore DC DC for Desktop Computers and Servers E RoHS Compliant m VRM for Intermediate Bus Architecture D PAK TO 252 Il PAK TO 251AA Short Lead Il PAK MOSFET Maximum Ratings Tc 25 C unless otherwise noted Parameter Ratings Drain to Source Voltage 25 Gate to Source Voltage 20 Drain Current Continuous Package Limited 35 Continuous Die Limited 98 Pulsed Note 1 Single Pulse Avalanche Energy Note 2 91 Power Dissipation 88 55 to 175 Symbol Ty TsrG Operating and Storage Temperature Thermal Characteristics Rouc Thermal Resistance Junction to Case TO_252 TO_251 LAASOW 49u91 L1 MOd j UULYI N 9628NGA 96Z80d4S Roa Thermal Resistance Junction to Ambient TO 252 TO 251 RoJA Thermal Resistance Junction to Ambient TO 252 1in
3. Input Capacitance 1960 2610 pF Cz Output Capacitance ape as Ves 0V 455 605 pF Criss Reverse Transfer Capacitance 315 475 pF Re Gate Resistance f 1MHz 1 1 Q Switching Characteristics talon Turn On Delay Time 10 20 ns tr Rise Time Vpp 13V Ip 35A 24 39 ns ta off Turn Off Delay Time Ves 10V Reg 200 99 158 ns tr Fall Time 57 91 ns Qs Total Gate Charge Ves 0 to10V 37 52 nC Qg Total Gate Charge Vas 0 to 5V Lob Ses 19 27 nC Qgs Gate to Source Gate Charge M 4 0mA 6 nC Qoa Gate to Drain Charge 6 nC Drain Source Diode Characteristics mu Ves OV lg 35A 0 9 1 25 V Vsp Source to Drain Diode Voltage Ves OV lg 15A 0 8 1 0 V trr Reverse Recovery Time lp 35A di dt 100A us 30 45 ns Qrr Reverse Recovery Charge Ip 35A di dt 100A us 23 35 nC Notes LAASOW 49u91 L1 MOd JouUEU2 N 9678n03 9628003 1 Pulse time lt 300us Duty cycle 296 2 Starting Ty 25 C L 0 3mH las 24 7A Vpp 23V Veg 10V FDD8796 FDU8796 Rev B 2 www fairchildsemi com Typical Characteristics T 25 C unless otherwise noted PULSE DURATION 80s DUTY CYCLE 0 5 MAX Fs on nee PULSE DURATION 80us 10V DUTY CYCLE 0 5 MAX Ip DRAIN CURRENT A NORMALIZED DRAIN TO SOURCE ON RESISTANCE Vps DRAIN TO SOURCE VOLTAGE V Ip DRAIN CURRENT A Figure 1 On Region Characteristics Figure 2 Normalized On Resistance vs Drain Current and Gate Voltage
4. T GlobalOptoisolator MicroPak QT Optoelectronics TinyLogic CROSSVOLT GTO MICROWIRE Quiet Series TINYOPTO DOME HiSeC MSX RapidConfigure TruTranslation EcoSPARK I c MSXPro RapidConnect UHC E CMOS i Lo OCX yuSerDes UltraFET EnSigna ImpliedDisconnect OCXPro ScalarPump UniFET FACT IntelliMAX OPTOLOGIC SILENT SWITCHER VCX FACT Quiet Series OPTOPLANAR SMART START Wire PACMAN SPM Across the board Around the world POP Stealth The Power Franchise Power247 SuperFET Programmable Active Droop PowerEdge SuperSOT 3 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accorda
5. copper pad area Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8796 FDD8796 TO 252AA 13 12mm 2500 units FDU8796 FDU8796 TO 251AA N A Tube N A 75 units FDU8796 FDU8796 F071 TO 251AA N A Tube N A 75 units 2006 Fairchild Semiconductor Corporation FDD8796 FDU8796 Rev B www fairchildsemi com Electrical Characteristics 1 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics Bypss Drain to Source Breakdown Voltage Ip 250A Ves OV 25 V ABypss Breakdown Voltage Temperature Ip 250uA referenced to 7 mV C AT Coefficient 25 C Ipss Zero Gate Voltage Drain Current us t d T 150 C 558 uA lass Gate to Source Leakage Current Ves 20V 100 nA On Characteristics Vos th Gate to Source Threshold Voltage Ves Vps lp 2500A 1 2 1 8 2 5 V AVGs th Gate to Source Threshold Voltage lp 7 250p4A referenced to 67 mV C ATj Temperature Coefficient 25 C Ves 10V Ip 35A 4 5 5 7 DS on Drain to Source On Resistance Vos 749V dure do 99 29 mQ Vps 10V Ip 35A 6 9 95 Ty 175 C Dynamic Characteristics Ciss
6. gure 12 Single Pulse Maximum Power Dissipation FDD8796 FDU8796 Rev B 4 www fairchildsemi com LAASOW 4 U2u8J149 0od JouUEU2 N 9678n03 96280043 Typical Characteristics T 25 C unless otherwise noted 2 T T i aeas T T i tls 1 DUTY CYCLE DESENDING ORDER 4 ED 0 5 0 2 z s 01 u N 0 1 0 05 W ba ae iu E 0 02 a 0 01 N 28 a 0 01 o NOTES s DUTY FACTOR D ty t SINGLE PULSE PEAK T Ppp X Zojc X Rouc Tc 1E 3 LLLI LIIIN 10 10 10 10 10 10 t RECTANGULAR PULSE DURATION s Figure 13 Transient Thermal Response Curve FDD8796 FDU8796 Rev B 5 www fairchildsemi com LAASOW 49u91 L1 MOd JouUEU2 N 9678n03 96280043 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FAST ISOPLANAR PowerSaver SuperSOT 6 ActiveArray FASTr LittleFET PowerTrench SuperSOT 8 Bottomless FPS MICROCOUPLER QFET SyncFET Build it Now FRFET MicroFET QS TCM CoolFE
7. nce with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Obsolete Full Production Not In Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev 118 FDD8796 FDU8796 Rev B www fairchildsemi com LAASOW 4 U2u8J119 0gd JouuEu2 N 9678n03 9678003
8. ource Voltage Ip DRAIN CURRENT A las AVALANCHE CURRENT A N 0 0 01 0 1 1 10 100 300 25 50 75 100 125 150 175 tay TIME IN AVALANCHE ms Tc CASE TEMPERATURE C Figure 9 Unclamped Inductive Switching Figure 10 Maximum Continuous Drain Current vs Capability Case Temperature 1000 10000 pn en Ves 10V tt Te 25 C x FOR TEMPERATURES 5 100 z ABOVE 25 C DERATE PEAK u z 9 CURRENT AS FOLLOWS 2 us am s r A T 5 e c S alse I ai 1000 I bs 25055 z E LIMITED BY PACKAGE NC ame E b m 1c gt s 10ms3 x E OPERATION IN THIS SINGLE PULSE j m AREA MAY BE Ty MAX RATED DC a 100 t SINGLE PULSE LIMITED BY rps on Tc 25 C 0 1 ooroo 59 oa Vps DRAIN TO SOURCE VOLTAGE V us LL EE MEO ig n ps v t PULSE WIDTH s Figure 11 Forward Bias Safe Operating Area Fi
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FAIRCHILD FDD8796/FDU8796 Manual