FAIRCHILD FDB8447L Manual
Contents
1. 3000 Ciss T 1000 o i Coss o E E o c 2 rss 100 f 1MHz Ves 0V 50 0 1 1 10 40 Vps DRAIN TO SOURCE VOLTAGE V Figure8 Capacitance vs Drain to Source Voltage 80 Le E 60 M LM z mee ws H B Ves 10V 40 z il E Limited by Package a Ves 4 5V A 20 a Rosc 2 1 C W 0 25 50 75 100 125 150 T CASE TEMPERATURE C Figure 10 Maximum Continuous Drain Current vs Case Temperature 1000 ose ren a rain Ves 10V FOR TEMPERATURES Lo ABOVE 25 C DERATE PEAK z CURRENT AS FOLLOWS 9 150 T z its e ul E Te 225 C 4 X m 100 ul D 4 SINGLE PULSE d 50 10 10 10 10 10 10 t PULSE WIDTH s Figure 12 Single Pulse Maximum Power Dissipation FDB8447L Rev C 4 www fairchildsemi com LAASOW U u81119 Mod UULYI N AOF LUFFogO Typical Characteristics 7 25 C unless otherwise noted 2 T f T Pot EA T T DUTY CYCLE DESCENDING ORDER 1 d a D 20 5 9 0 2 EN o I ui 0 05 u A 9 0 02 Hz L o mI si Es o Zz 0 1 NOTES DUTY FACTOR D ty t SINGLE PULSE PEAK T Pp X Zoe X Roc Tc 0 05 l2. W Fast Switching W RoHS Compliant aa FAIRCHILD EEE SEMICONDUCTOR FDB8447L 40V N Channel PowerTrench MOSFET 40V 50A 8 5mO Features E Max fDS on 8 5mQ at Ves 10V Ip 14A B Max fps on 11M9 at Vas 4 5V Ip 11A February 2007 General Description This N Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to deliver low rps oy and optimized BVpss capability to offer superior performance benefit in the application Application W Inverter W Power Supplies D O GJ Wi G Fed S TO 263AB Q FDB Series MOSFET Maximum Ratings Tc 25 C unless otherwise noted Symbol Parameter Ratings Units Vps Drain to Source Voltage 40 V Ves Gate to Source Voltage 20 V Drain Current Continuous Package limited Tc 25 C 50 i Continuous Silicon limited Tc 25 C Note 1 66 A g Continuous Ta 25 C Note 1a 15 Pulsed 100 Eas Drain Source Avalanche Energy Note 3 153 mJ P Power Dissipation Tc 25 C 60 w p Power Dissipation Note 1a 3 1 Ty TsTG Operating and Storage Junction Temperature Range 55 to 150 C Thermal Characteristics Roc Thermal Resistance Junction to Case Note 1 2 1 CW Roja Thermal Resistance Junction to Ambient Note 1a 40 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB844
3. IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are 2 A critical component is any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance the failure of the life support device or system or to affect its safety or with instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product develop ment Specifications may change in any manner without
4. Ves 10V RGEN 60 la ofr Turn Off Delay Time 28 45 ns tr Fall Time 4 10 ns Hamon Total Gate Charge Vas 10V 37 52 nC Q T Vpp 20V Ip 14A g TOT otal Gate Charge Vas 5V Vae 10V 20 28 nC Qgs Gate to Source Gate Charge n 6 nC Qoa Gate to Drain Miller Charge 7 nC Drain Source Diode Characteristics Vsp Source to Drain Diode Forward Voltage Ves 0V Ilas 2 14A Note 2 0 8 1 2 V m Reverse Recovery Time 28 42 ns Ip 14A di dt 100A us Qr Reverse Recovery Charge 24 36 nC Notes 1 Roya is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins Roc is guaranteed by design while Rain is determined by the user s board design a 40 C W when mounted on a 1 in pad of 2 oz copper b 62 5 C W when mounted on a minimum pad 2 Pulse Test Pulse Width lt 3001s Duty cycle lt 2 0 3 Starting Tj 25 C L ImH Las 17 5A Vpp 40V Vag 10V FDB8447L Rev C 2 www fairchildsemi com LAASOW U u81119 Mod UULYI N ADP 12v v8804 Typical Characteristics 7 25 C unless otherwise noted 100 PULSE DURATION 80us DUTY CYCLE 0 5 MAX Ves 10V Ves 4 5V 80 K Ww O zZz z 5 E F X E 60 Ves 7 4V Ws 20 2 590 o l z i5 SG 40 ee 15 E 23 F N on H 10 z Ves 10V PULSE DURATION 80s R E DUTY C
5. notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be pub lished at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontin ued by Fairchild Semiconductor The datasheet is printed for reference infor mation only Rev 23 2007 Fairchild Semiconductor Corporation www fairchildsemi com LAASOW 4U u8111e od UULYI N ADV 12vv8804
6. 7L FDB8447L TO 263AB 330mm 24mm 800 units 2007 Fairchild Semiconductor Corporation FDB8447L Rev C www fairchildsemi com LAASOW 49u31 L13MOd UULYI N ADV 1Z778aqs Electrical Characteristics 1 25 c unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250A Veg OV 40 V ABVpss Breakdown Voltage Temperature s DAP Coefficient Ip 250uA referenced to 25 C 35 mV C Ipss Zero Gate Voltage Drain Current Vps 32V Ves OV 1 pA lass Gate to Source Leakage Current Ves 20V Veg 0V 100 nA On Characteristics Note 2 Vesith Gate to Source Threshold Voltage Ves Vps lp 250uA 1 1 9 3 V EG E Voltage Ip 250pA referenced to 25 C 5 mV C Ves 10V Ip 14A 7 4 8 5 TDS on Static Drain to Source On Resistance Ves 4 5V lp 11A 8 7 11 0 mQ Ves 10V Ip 14A Ty 125 C 10 8 12 4 ZFS Forward Transconductance Vps 5V lp 14A 58 S Dynamic Characteristics Ciss Input Capacitance AMT 1970 2620 pF Cos Output Capacitance EAM DIOSA nd 250 335 pF Cres Reverse Transfer Capacitance 150 225 pF Rg Gate Resistance f 1MHz 1 0 Q Switching Characteristics ta on Turn On Delay Time 11 20 ns t Rise Time Vpop 20V Ins 14A 6 12 ns
7. YCLE 0 5 MAX o 05 0 1 2 3 4 0 20 40 60 80 100 Vps DRAIN TO SOURCE VOLTAGE V Figure 1 On Region Characteristics 1 6 T Ip 7 14A Vos 10V 14 1 2 1 0 rDS on DRAIN TO SOURCE ON RESISTANCE mo 0 8 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 0 6 75 50 25 0 25 50 75 100 125 150 Ty JUNCTION TEMPERATURE C Figure3 Normalized On Resistance vs Junction Temperature 100 PULSE DURATION 80us DUTY CYCLE 0 5 MAX 80 Vpp 5V Ip DRAIN CURRENT A Ves GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics bed o N a Ip DRAIN CURRENT A Figure2 Normalized On Resistance vs Drain Current and Gate Voltage N a ID 7A PULSE DURATION 80s DUTY CYCLE 0 5 MAX N e a eo 3 4 5 6 7 8 9 10 Ves GATE TO SOURCE VOLTAGE V Figure 4 On Resistance vs Gate to Source Voltage _ 100 lt E Ves 0V 5 w 10 7a 2 2 O l SC E Ty 25 C a w 01 T 1259 2 Ty 55 C S gj 0 01 2 E 0 001 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Vsp BODY DIODE FORWARD VOLTAGE V Figure6 Sourceto Drain Diode Forward Voltage vs Source Cur
8. l page 10 10 107 10 10 10 t RECTANGULAR PULSE DURATION s Figure 13 Transient Thermal Response Curve FDB8447L Rev C 5 www fairchildsemi com LAASOW Y9U31143MOd UULYI N AOF 12v v8804 EH FAIRCHILD Saas SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx GTO PowerSaver TinyBuck Across the board Around the world HiSeC PowerTrench TinyLogic ActiveArray i Lo Programmable Active Droop TINYOPTO Bottomless ImpliedDisconnect QFET TinyPower Build it Now IntelliMAX QSTM TinyWire CoolFET ISOPLANAR QT Optoelectronics TruTranslation CROSSVOLT MICROCOUPLER Quiet Series uSerDes CTL MicroPak RapidConfigure UHC Current Transfer Logic MICROWIRE RapidConnect UniFET DOME MSX ScalarPump VCX E2CMOS MSXPro SMART START Wire EcoSPARK OCcxX SPM EnSigna OCXPro SuperFET FACT Quiet Series OPTOLOGIC SuperSOT 3 FACT OPTOPLANAR SuperSOT 6 FAST PACMAN SuperSOT 8 FASTr POP TCM FPS Power220 The Power Franchise FRFET Power247 IM GlobalOptoisolator PowerEdge TinyBoost DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
9. rent FDB8447L Rev C 3 www fairchildsemi com LAASOW U u81119 Mod UULYI N AOT 12v v8804 Typical Characteristics 7 25 C unless otherwise noted _ 10 8 amp al Q u 6 o D o 9 4 o E B2 o 0 gt 0 10 20 30 40 Qg GATE CHARGE nC Figure 7 Gate Charge Characteristics 20 T 5 10 W D E D TJ 25 C W rI 9 Ty 1259C lt z gt lt 7 E 1 0 01 0 1 1 10 100 tay TIME IN AVALANCHE ms Figure 9 UnclampedlInductive Switching Capability 300 100 4 2 lt IE E 4 BES Sha Tei a SS LLL sl 100us D ai ke ke klal Mm eebe 10 T Y 2 SC x o SCC m z 4 EIN N E wid D NL A 4 LSJ f ims E OPERATION IN THIS SINGLE PULSE 10ms 4 AREA MAY BE Ty MAX RATED 100ms L LIMITED BY roso Tc 25 C 0 1 0 1 1 10 100 Vos DRAIN to SOURCE VOLTAGE V Figure 11 Forward Bias Safe Operating Area
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FAIRCHILD FDB8447L Manual