FAIRCHILD FCP4N60 Manual
Contents
1. 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Farichild s Anti Counterfeiting Policy is also stated on our external website www fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page2. C 4 Pulse Test Pulse width lt 300us Duty Cycle lt 2 5 Essentially Independent of Operating Temperature Typical Characteristics 2 www fairchildsemi com FCP4N60 Rev A LAASOW INUUEUO N A009 09Ntd2J Typical Performance Characteristics Figure 1 On Region Characteristics Bottom V 15 0V E 100 V EZ 80V 7 75M 70V 65V id l TR BBV sig Drain Current A 1 250us Pulse Test 2 T 25 C 1 10 Vps Drain Source Voltage V Figure 3 On Resistance Variation vs Drain Current and Gate Voltage Roson 9 Drain Source On Resistance 2 5 Vas 20V Note T 25 C 5 0 7 5 10 0 12 5 Drain Current A Figure 5 Capacitance Characteristics 1200 C7 Ce Cy C shorted Cs Oy Cy 1000 RN ip hte ca en pe ang Nomen al Gm MEE raiado is pegs Te ra yey C x Cy BOO pasmo cats ete BRR RR Taste mie eon Capacitance pF FCP4N60 Rev A1 Vos Drain Source Voltage V Figure 2 Transfer Characteristics Drain Current A Note 1 V 40V 2 250us Pulse Test Vag Gate Source Voltage V Figure 4 Body Diode Forward Voltage l r Reverse Drain Current A Variation vs Source Current and Temperatue Notes 1 V4 0V 2 250us Pulse Test 04 0 6 0 8 1 0 1 2 Vop Source Drain Voltage V Figure 6 Gate Charge Characteristics Vs Gate Source Voltage V Note
3. ISOPLANAR o TM eee EfficentMax MegaBuck Saving our world 1mW AN kW at atime Sal EZSWITCH MICROCOUPLER SmartMax Ti w n MicroFET SMART START A MicroPak SPM Ege MillerDrive STEALTH MM MotionMax M SuperFET Des Fairchild Motion SPMTM SuperSOTTM 3 UHC Fairchild Semiconductor OPTOLOGIC SuperSOT M 6 Ultra FRFET FACT Quiet Series OPTOPLANAR SuperSOT 8 UniFET FACT SupreMOSTM VCX FAST SyncFET VisualMax FlashWriter PDP SPM SYSTEM P EPSTM Power SPMTM GENERAL F PESTM PowerTrench The Power Franchise PowerXS EZSWITCH and FlashWriter are trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein
4. Not In Production Semiconductor The datasheet is for reference information only 8 www fairchildsemi com Rev 137 FCP4N60 Rev A1
5. 1 3 9A 5 10 15 Q Total Gate Charge nC www fairchildsemi com LAASOW INUUEUO N A009 09Ntd2J Typical Performance Characteristics continued Figure 7 Breakdown Voltage Variation Figure 8 On Resistance Variation vs Temperature vs Temperature 3 0 m c m o Pisoni Normalized Drain Source On Resistance 0 5 Vbss Normalized Drain Source Breakdown Voltage 100 50 0 50 100 150 200 ae 00 50 0 50 100 150 200 T Junction Temperature C T Junction Temperature C Figure 9 Maximum Safe Operating Area Figure 10 Maximum Drain Current vs Case Temperature Operation in This Area is Limited by R Bie Drain Current A PO Notes 1 7 25 C O HET sew 2 T 150 C 3 Single Pulse Drain Current A 10 10 10 10 25 50 75 100 125 150 Vg Drain Source Voltage V T Case Temperature C Figure 11 1 Transient Thermal Response Curve Notes 1 Z ol 2 5 C W Max 2 Duty Factor D t 4 3 Tims Tc Pou Zost rot PLO t4 lo t Thermal Response 6JC single pulse 10 10 10 10 10 10 10 t Square Wave Pulse Duration sec 4 www fairchildsemi com FCP4N60 Rev A LAASOW INUUEUO N A009 09Ntd2J Rig ity tov le o FCP4N60 Rev A Gate Charge Test Circuit amp Waveform Same Type as DUT Charge Resistive Switching Test Circuit amp Waveforms Fi Vos
6. FAIRCHILD December 2008 EHE SuperFET FCP4N60 600V N Channel MOSFET Features Description 650V OT 150 C SuperFET M is Fairchild s proprietary new generation of high Typ Hps on 1 00 Ultra low gate charge typ Og 12 8nC lower gate charge performance Low effective output capacitance typ Coss eff 32pF This advanced technology has been tailored 100 avalanche tested e RoHS Compliant miniaturization and higher efficiency G TO 220 GDS FCP Series Absolute Maximum Ratings Drain Current Continuous Tc 25 C 3 9 Continuous Tc 100 C 2 5 Drain Current Pulsed Note 1 Gate Source voltage Eas Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Peak Diode Recovery dv dt 4 5 Power Dissipation To 25 C 50 Derate above 25 C 0 4 Operating and Storage Temperature Range 55 to 150 TL Maximum Lead Temperature for Soldering Purpose 300 1 8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCP4N60 25 Thermal Resistance Junction to Ambient voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and to minimize conduction loss provide superior switching performance and withstand extreme dv dt rate and higher avalanche energy Consequently SuperFET is very suitable for various AC DC power conversion in switching mode o
7. Vos gt 10 Wee OA eke Unclamped Inductive Switching Test Circuit amp Waveforms ko RUNE quem PY oss aa n a 2 BY nes x V np BY nes ln AS F Von o t DUT Uu Vos b pa t Tire 5 www fairchildsemi com LAASOW INUUEUO N A009 09Ntd2J FCP4N60 Rev A1 Peak Diode Recovery dv dt Test Circuit amp Waveforms DUT 4 ES o a N Isp P L n i Driver Fig i Same Type as OUT JUL Ves m dv dt controlled by Ra controlled by puke period e DUT E Gate Puke Width Gate Pube Period le Body Diode Fonuard Current Body Diode Reverse Current Body Diode Recovery du dt Vs D Body Diode Forvard Voltage Drop www fairchildsemi com LAASOW INUUEUO N A009 09Ntd2J Mechanical Dimensions FCP4N60 Rev A1 Dimensions in Millimeters www fairchildsemi com LAASOW INULUEUO N A009 09Ntd2J EE SS SER FAIRCHILD SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks LAASOW SUULYD N A009 09Ntd2J Build it Now FRFET Programmable Active Droop CorePLUS Global Power Resource M QFET CorePOWER Green FPS QSTM ee CROSSVOLT Green FPS e Series Quiet Series SE CTLTM GTO RapidConfigure TinyLogic Current Transfer Logic IntelliMAX M EcoSPARK
8. cited above Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design TM i Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed FUI Production make changes at any time without notice to improve the design Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete
9. peration for system 2008 Fairchild Semiconductor Corporation 1 FCP4N60 Rev A www fairchildsemi com LAASOW INUUEUO N A009 09Ntd2J Package Marking and Ordering Information i 1 ee Femo Forno tom Electrical Characteristics Tc 25 C unless otherwise noted Symboi Parameter Conditions Win Typ Max Units Off Characteristics BVoss Drain Source Breakdown Voltage Vos 0V p 2504A T 2560 600 v m Vesto boma noe 9 v_ ABVpss Breakdown Voltage Temperature B B 5 Coefficient Ip 250uA Referenced to 25 C V C Ipss Zero Gate Voltage Drain Current Vps 600V Ves OV 1 LA Vos 480V Tc 125 C 10 uA Gate Body Leakage Current Forward Vas 30V Vps OV 100 m Gate Body Leakage Current Reverse Ves 30V Vps OV 400 nA On Characteristics Poon Ginemed v0 2 foes Forward Transconductance Voss los20A mea 32 8 Dynamic Characteristics Turn On Delay Time Vpp 300V Ip 3 9A Turn On Rise Time OE oO s xe 8 12 8 n NS ELS NN RENI NN ES ECT E Lados ES E E Es EN EN ld on lr la off tf Drain Source Diode Characteristics and Maximum Ratings s Qr dlg dt 2100A us Note 4 Notes 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 las 1 9A Vpp 50V Re 256 Starting Tj 25 C 3 Isp lt 3 9A di dt lt 200A us Vpp lt BVpss Starting Ty 25
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FAIRCHILD FCP4N60 Manual