FAIRCHILD FDA38N30 Manual
Contents
1. ae FAIRCHILD ere eewres ere SEMICONDUCTOR FDA38N30 N Channel MOSFET 300V 38A 0 0850 Features Rps on 20 070 Typ Ves 10V lp 19A Low gate charge typical 60 nC e Low C typical 60 pF Fast switching 100 avalanche tested Improved dv dt capability ESD Improved capability RoHS Compliant January 2012 UniFET Description These N Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary planar stripe DMOS technology This advanced technology has been especially tailored to mini mize on state resistance provide superior switching perfor mance and withstand high energy pulse in the avalanche and commutation mode These devices are well suited for high effi cient switched mode power supplies and active power factor correction D m p M x G g TO 3PN GDS FDA Series 9 MOSFET Maximum Ratings Tc 25 C unless otherwise noted Symbol Parameter FDA38N30 Unit Voss Drain to Source Voltage 300 V Voss Gate to Source Voltage 30 V Continuous Tc 25 C 38 Ip Drain Current 7 A Continuous Tc 100 C 22 IDM Drain Current Pulsed Note 1 150 A Eas Single Pulsed Avalanche Energy Note 2 1200 mJ lar Avalanche Current Note 1 38 A Ear Repetitive Avalanche Energy Note 1 31 mJ dv dt Peak Diode Recovery dv dt Note 3 4 5 V ns Tc 25 C2. 3 Single Pulse 10 100 500 Vps Drain Source Voltage V Ros on Normalized Drain Source On Resistance Ip Drain Current A Figure 8 On Resistance Variation vs Temperature 3 0 2 5 2 0 1 5 1 0 0 5 0 0 100 50 0 Notes 1 Ves 10V 2 Ip 19A 100 150 Ty Junction Temperature c Figure 10 Maximum Drain Current vs Case Temperature 40 30 20 10 0 25 50 75 100 125 150 Tc Case Temperature C Figure 11 Transient Thermal Response Curve N gt 01 o c o o o o ir T E O S 001 1 Zuc t 0 4 CW Max F FE 2 Duty Factor D t4 tz 3 Tym Tc Pom Zoucl t Rectangular Pulse Duration sec FDA38N30 Rev CO www fairchildsemi com LAASOW euueYuD N 0 N8 VQJ Gate Charge Test Circuit amp Waveform Charge 90 10 GS s t ton Unclamped Inductive Switching Test Circuit amp Waveforms tom UM tor FDA38N30 Rev CO www fairchildsemi com LAASOW euueYyD N 0 N8 VQJH Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT e dv dt controlled by Ro lg controlled by pulse period _ Gate Pulse Width V Mi Gate Pulse Period Driver lg Body Diode Forward Current Isp DUT di dt I Body Diode Reverse Current Vos
3. from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development Specifications Formative In Design may change in any manner without notice Advance Information Datasheet contains preliminary data supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design Preliminary First Production Datasheet contains final specifications Fairchild Semiconductor reserves the right to Full Production make changes at any time without notice to improve the design No Identification Needed Datasheet contains specifications on a product that is discontinued by Fairchild Not In Production Semiconductor The datasheet is for reference information only Obsolete Rev 161 FDA38N30 Rev CO 8 www fairchildsemi com LAASOW euueYyD N 0 N8 VQJ
4. 312 w Pp Power Dissipation Derate above 25 C 2 5 wc Ty Tsrc Operating and Storage Temperature Range 55 to 150 C TL Maximum Lead Temperature for Soldering Purpose 300 C 1 8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min Max Unit Roc Thermal Resistance Junction to Case 0 4 C W Rocs Thermal Resistance Case to Sink 0 24 C W Rosa Thermal Resistance Junction to Ambient 40 C W 2011 Fairchild Semiconductor Corporation FDA38N30 Rev CO www fairchildsemi com LAASOW euueYyD N 0 N8 VQJ Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDA38N30 FDA38N30 TO 3PN 30 Electrical Characteristics v 25 c uniess otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ip 250uA Veg OV Tc 25 C 300 V Wap EA UPPER Ip 250A Referenced to 25 C 0 3 vec Vps 300V Veg OV 1 Ipss Zero Gate Voltage Drain Current pA Vps 240V Tc 125 C 5 10 less Gate Body Leakage Current Ves 30V Vps OV 100 nA On Characteristics Vesith Gate Threshold Voltage Vos Ves lp 2504A 3 0 5 0 V i LM a ee Veg 10V Ip 19A 007 0 085 grs Forward Transcon
5. Current A 8 Notes 1 250s Pulse Test DSST STEE ZTe 2 10 0 10 V Drain Source Voltage V Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 0 13 Roson o Drain Source On Resistance e Es 0 25 50 75 100 125 6000 B Capacitances pF Ij Drain Current A lbp Reverse Drain Current A Ves Gate Source Voltage V Figure 2 Transfer Characteristics a V Gate Source Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperatue a e 02 04 06 08 10 12 14 16 18 V4 Source Drain voltage V Figure 6 Gate Charge Characteristics 12 0 i n fi 1 0 10 20 30 40 50 60 Q Total Gate Charge nC FDA38N30 Rev CO www fairchildsemi com LAASOW euueYyD N 0 N8 VQJ Typical Performance Characteristics continuea Figure 7 Breakdown Voltage Variation vs Temperature 1 2 1 1 1 0 BVpss Normalized 0 9 Drain Source Breakdown Voltage Notes 1 Ves 0V 2 lp 250uA 0 8 100 50 0 50 100 150 T Junction Temperature C Figure 9 Maximum Safe Operating Area 1000 100 10 Ip Drain Current A 0 1 0 01 1 is Limited by R ps on Operation in This Area _ Notes 1 Tc 25 C 2 Ty 150 C
6. DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop FDA38N30 Rev CO www fairchildsemi com LAASOW euueYyD N O N8EVCS Mechanical Dimensions TO 3PN R0 50 Dimensions in Millimeters FDA38N30 Rev CO www fairchildsemi com LAASOW euueYyD N 0 N8 VQJ rmi FAIRCHILD gt SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks 2Cool F PFS PowerTrench The Power Franchise AccuPower FRFET PowerXS M the e AX CAP Global Power Resource M Programmable Active Droop wer BitSic Green Bridge QFET x iepthise oy Build it Now Green FPS as TinyBuck CorePLUS Green FPS e Series Quiet Series TinyCalc CorePOWER Gmax RapidConfigure TinyLogic TM TM TM cr intel MAX C TINYOPTO Current Transfer Logic ISOPLANAR Saving our world 1mW W kW at a time i Lead DEUXPEED Marking Small Speakers Sound Louder SignalWise xin Mr Dual Cool and Better SmartMax TaSi EcoSPARK MegaBuck SMART START rS i Detect EfficentMax MICROCOUPLER Solutions for Your Success MEE anal st ESBC MicroFET SPM Pee s MicroPak STEALTH yp MicroPak2 SuperFET bss Fairchild MillerDrive SuperSOT 3 Fair
7. child Semiconductor MotionMax SuperSOT 6 ae FACT Quiet Series Motion SPM SuperSOT 8 Ultra FRFET FAC mWSaver SupreMOs UniFET FAST OptoHiT SyncFET VOX FastvCore OPTOLOGIC Sync Lock VisualMax FETBench OPTOPLANAR system VEEGER FlashWriter GENERAL i FPS Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 intended for surgical implant into the body or b support or sustain life and c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to res
8. ductance Vps 20V Ip 19A Note 4 6 3 S Dynamic Characteristics Ciss Input Capacitance 2600 pF Coss Output Capacitance 205 nad Ves OV 500 pF Cres Reverse Transfer Capacitance 60 pF Qattot Total Gate Charge at 10V 5 60 B nc Vps 240V Ip 38A Qgs Gate to Source Gate Charge Ves 10V 2 d 2 nc Qoa Gate to Drain Miller Charge D 7 28 7 nC Switching Characteristics la on Turn On Delay Time 53 69 ns t Turn On Rise Time Map z i 3 10 143 ms la ofr Turn Off Delay Time 118 153 ns ty Turn Off Fall Time Nole S 32 54 70 ns Drain Source Diode Characteristics Is Maximum Continuous Drain to Source Diode Forward Current 38 A ISM Maximum Pulsed Drain Source Diode Forward Current 150 A Vsp Drain to Source Diode Forward Voltage Ves OV Isp 38A 1 4 V trr Reverse Recovery Time Ves OV Isp 38A 315 ns Qr Reverse Recovery Charge dlp dt 100A us Note 4 z 4 0 uC NOTES 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 1 7mH las 38A Vpp 50V Rg 259 Starting Ty 25 C 3 Isp lt 38A di dt lt 200A us Vpp lt BVpss Starting Ty 25 C 4 Pulse Test Pulse width lt 300us Duty Cycle lt 2 5 Essentially Independent of Operating Temperature Typical Characteristics FDA38N30 Rev CO www fairchildsemi com LAASOW UULYI N 0 N8 VQJ Typical Performance Characteristics Figure 1 On Region Characteristics Drain
9. ult in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought
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FAIRCHILD FDA38N30 Manual