FAIRCHILD FCH47N60NF Manual
Contents
1. On Characteristics Vas h Gate Threshold Voltage Vas Vos Ip 250uA 2 E 4 V Rpsvon Static Drain to Source On Resistance Ves 10V Ip 23 5A 57 5 65 0 mQ JES Forward Transconductance Vps 40V Ip 23 5A 52 100 S Dynamic Characteristics Giss Input Capacitance y ET Bs 4600 6120 pF Coo Output Capacitance ee ne ax E 195 260 pF Cree Reverse Transfer Capacitance 3 0 5 0 pF Gase Output Capacitance Vps 380V Ves OV f 1MHz 108 pF Coss eff Effective Output Capacitance Vps OV to 380V Ves OV 492 pF Qa tot Total Gate Charge at 10V 121 157 nC Qi Gate to Source Gate Charge Vps 380V Ip 23 5A 23 nC Vas 10V Qd Gate to Drain Miller Charge um 47 nC ESR Equivalent Series Resistance G S Drain Open 0 9 Q Switching Characteristics ta on Turn On Delay Time 34 78 ns tr Turn On Rise Time Vpp 380V Ip 23 5A 22 54 ns laoff Turn Off Delay Time Reen 4 70 117 244 ns ti Turn Off Fall Time Note 4 4 18 ns Drain Source Diode Characteristics ls Maximum Continuous Drain to Source Diode Forward Current 47 A lon Maximum Pulsed Drain to Source Diode Forward Current 141 A Vsp Drain to Source Diode Forward Voltage Vas OV Isp 23 5A 1 2 V ly Reverse Recovery Time Ves OV lap 23 5A 169 ns Q Reverse Recovery Charge dlg dt 100A us 1 3 1 uC Notes 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 Ing 15 3A Re 250 Starting Ty 25 C 3 Isp x2. 4 B DIMENSIONS ARE EXCLUSIVE OF BURRS MOLD FLASH AND TIE BAR EXTRUSIONS C ALL DIMENSIONS ARE IN MILLIMETERS D DRAWING CONFORMS TO ASME Y 14 5 1994 JA DOES NOT COMPLY JEDEC STANDARD VALUE A NOTCH MAY BE SQUARE G DRAWING FILENAME MKT TO247A03 REVO02 Dimensions in Millimeters FCH47N60NF Rev A1 7 www fairchildsemi com 134444 L34SON Jeuueu2 N A009 3N09NZEHOJ3 aE as FAIRCHILD m a SNP NE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidiaries and is not intended to be an exhaustive list of all such trademarks AccuPower F PFS PowerTrench The Power Franchise Auto SPM FRFET PowerXxS The Right Technology for Your Success Build it Now Global Power Resource M Programmable Active Droop wie CorePLUS Green FPS EEIS p wer CorePOWER Green FPS e Series cou EL Se CROSSVOLT Gmax Quiet Series PAM Sen CTL GTO RapidConfigure D ont Current Transfer Logic IntelliMAX c TM Tinio jc DEUXPEED ISOPLANAR RS ee Dual Cool MegaBuck Saving our world 1mW W KkW at atime Tin Power EcoSPARK MICROCOUPLER SignalWise Rte EfficentMax MicroFET SmartMax wl ESBC MicroPak SMART START M MicroPak2 SPM TriFault Detect E T MillerDrive STEALTH a Fairchild MotionMax SuperFET PB im Fairchild Semiconductor Mot
3. 45 8 A di dt lt 1200A us Vpp x 380V Starting Ty 25 C 4 Essentially Independent of Operating Temperature Typical Characteristics FCH47N60NF Rev A1 2 www fairchildsemi com 14444 L34SONW Jeuueu N A009 ANOONZVHOS Typical Performance Characteristics Roson mo Drain Source On Resistance Figure 1 On Region Characteristics 300 100 10 Ip Drain Current A 1 250us Pulse Test 2 Tc 25 C Vps Drain Source Voltage V Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 140 N e e e co e 80 120 160 Ip Drain Current A Figure 5 Capacitance Characteristics 10 no EE I us l ae a 10 o lt b O foo po c S ai E a S 03 9 10 Note Q lt 1 Vas OV uu um O 2 f 1MHz piu aa iss Cgs Cgd Cds shorted Coss Cds Cgd T E l Crss Cgd Er I 1 E i n ae ae ee 0 1 1 10 100 600 Vps Drain Source Voltage V FCH47N60NF Rev A1 Is Reverse Drain Current A Figure 2 Transfer Characteristics 500 1 00 5 O E 10 a 55 C Notes 1 Vps 20V 2 250us Pulse Test 1 2 4 6 8 Ves Gate Source Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature 400 100 2 250s Pulse Test 1 j 0 4 0 6 0 8 1 0 1 2 1 4 Vsp Body Diode Forward Voltage V Figure 6 Gate Charge Cha
4. SSS FAIRCHILD ee SEMICONDUCTOR FCH47N60NF N Channel MOSFET FRFET 600V 47A 65mO January 2011 SupreMOS Features Description e Hps on 57 5mQ Typ Ves 10V Ip 23 5A Ultra Low Gate Charge Typ Q 121nC Low Effective Output Capacitance e 100 Avalanche Tested e RoHS Compliant The SupreMOS MOSFET Fairchild s next generation of high voltage super junction MOSFETs employs a deep trench filling process that differentiates it from preceding multi epi based technologies By utilizing this advanced technology and precise process control SupreMOS provides world class Rsp superior switching performance and ruggedness This SupreMOS MOSFET fits the industry s AC DC SMPS requirements for PFC server telecom power FPD TV power ATX power and industrial power applications D G TO 247 G p S S MOSFET Maximum Ratings 1 25 C unless otherwise noted Symbol Parameter Ratings Units Voss Drain to Source Voltage 600 V Vass Gate to Source Voltage 30 V Continuous Tc 25 C 45 8 Ip Drain Current Io z A Continuous Tc 100 C 28 9 lpm Drain Current Pulsed Note 1 137 4 A Eas Single Pulsed Avalanche Energy Note 2 2926 mJ lAR Avalanche Current 15 3 A Ear Repetitive Avalanche Energy 3 7 mJ A MOSFET dv dt Ruggedness 100 V ns Peak Diode Recovery dv dt Note 3 50 V ns NECS Tc 25 C 368 W P Power Dissipation a an Derate above 25 C 2 94
5. W C Ty TsTG Operating and Storage Temperature Range 55 to 150 1G 1 Maximum Lead Temperature for Soldering Purpose 300 oc L 1 8 from Case for 5 Seconds Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Ratings Units Rouc Thermal Resistance Junction to Case 0 34 Rocs Thermal Resistance Case to Heat Sink Typical 0 24 C W Roya Thermal Resistance Junction to Ambient 40 2011 Fairchild Semiconductor Corporation FCH47N60NF Rev A1 www fairchildsemi com 133U3 L34SONW Jeuueu N A009 ANOONZVHOS Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCH47N60NF FCH47N60NF TO 247 30 Electrical Characteristics Tc 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain to Source Breakdown Voltage Ib 1mA Vas OV Te 25 C 600 V ABVpss reso ieee pers Ip 1mA Referenced to 25 C 0 78 V C AT Coefficient Vps 480V Ves OV 10 Zero Gate Voltage Drain Current A DSS 1 Vps 480V Ves OV Te 125 C 7 100 less Gate to Body Leakage Current Ves 30V Vos 0V r 100 nA
6. e LL B p mee a e e a E c HO CAMERE S ue a PM RE q d eX TES HD E ERI e o 9 osm x 0 T gt t x mE to T a E 0 01 0 017 Notes E zb cm e 1 Zyc 0 34 C W Max ies B uci o a 2 Duty Factor D ty tg 3 Tum Tc Pom Zouc t 10 10 10 10 10 10 10 Rectangular Pulse Duration sec FCH47N60NF Rev A1 4 www fairchildsemi com Gate Charge Test Circuit amp Waveform Resistive Switching Test Circuit amp Waveforms R Vos V05 v 10 Vie ed tj Unclamped Inductive Switching Test Circuit amp Waveforms z E HL t Tire FCH47N60NF Rev A1 5 www fairchildsemi com 134444 L34SON Jeuueu N A009 ANOONZVHOS FCH47N60NF Rev A1 Vas Driver sp DUT Peak Diode Recovery dv dt Test Circuit amp Waveforms Driver Re f Same Type as DUT JUL Vas e dv dt controlled by Re e la controlled by pulse period Gate Pulse Width Gate Pulse Period l y Body Diode Forward Current di dt Ig Body Diode Reverse Current Body Diode Recovery dv dt Body Diode Forward Voltage Drop Vpp www fairchildsemi com 134444 L34SONW J9euueu2 N A009 ANOONZVHOS Mechanical Dimensions TO 247 3L 2 65 A 3 2 75 51 B 12 81 MIN 90 254 60 B Aw A B 4 5B On 13 08 MIN 1 17 D e0 254 6 B AG NOTES UNLESS OTHERWISE SPECIFIED A PACKAGE REFERENCE JEDEC TO 247 ISSUE E VARIATION AB DATED JUNE 200
7. ion SPM SuperSOT 3 y FACT Quiet Series OptiHi T TM SuperSOT 6 e FACT OPTOLOGIC SuperSOT 8 UHC FAST OPTOPLANAR SupreMOS Ultra FRFET FastvCore M SyncFET SALE FETBench Sync Lock YEA 5 VisualMax FlashWriter PDP SPM SYSTEM XS1M Fps Power SPM GENERAL Trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used here in 1 Life support devices or systems are devices or systems which a are 2 A critical component in any component of a life support device or intended for surgical implant into the body or b support or sustain life system whose failure to perform can be reasonably expected to cause and c whose failure to perform when
8. properly used in accordance with the failure of the life support device or system or to affect its safety or instructions for use provided in the labeling can be reasonably effectiveness expected to result in a significant injury of the user ANTI COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti Counterfeiting Policy Fairchild s Anti Counterfeiting Policy is also stated on our external website www Fairchildsemi com under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry All manufactures of semiconductor products are experiencing counterfeiting of their parts Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation substandard performance failed application and increased cost of production and manufacturing delays Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts have full traceability meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up to date technical and product information Fairchild and our Authori
9. racteristics 10 Vps 120V Vps 300V Vps 480V Ves Gate Source Voltage V Note Ip 23 5A 0 20 40 60 80 100 120 140 Q Total Gate Charge nC www fairchildsemi com 14444 L34SON Jeuueu N A009 ANOONZVHOS O Typical Performance Characteristics Continued I A y Figure 7 Breakdown Voltage Variation Figure 8 On Resistance Variation lt vs Temperature vs Temperature O 1 2 3 0 S o Oo 9 2 5 e o c e gt 1 1 0 a FE N 3 N v 2 0 35 Q lt E x E c P 9 9 190 S O 15 o Zg 22 5 F 5 1 0 tc 0 9 s D T a Notes a 1 Vas 10V 2 lp 1mA 2 Ip 23 5A S 0 8 0 0 100 50 0 50 100 150 200 100 50 0 50 100 150 200 o T Junction Temperature C T Junction Temperature C m Figure 9 Maximum Safe Operating Area Figure 10 Maximum Drain Current e vs Case Temperature TI SU E S 50 jum MES L rH ITI 100 lt wf A pet Z mei dp c 10 L _ nA SUN Kd c 3 z vi i D ENA P P 5 Operation in This Area o a 1 is Limited by R ps on 5 i3 m 0 1 1 Tc 25 C 2 Ty 150 C Zr 3 Single Pulse Porgiii k ETE i i 0 1 1 10 100 1000 25 50 75 100 125 150 Vps Drain Source Voltage V Tc Case Temperature C Figure 11 Transient Thermal Response Curve 1 S E ona S N NEN Wr HE i o 0 1 A er ee
10. zed Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Datasheet contains the design specifications for product development Specifications Advance Information Formative In Design may change in any manner without notice Datasheet contains preliminary data supplementary data will be published at a later Preliminary First Production date Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design anti Datasheet contains final specifications Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design i Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete NOL IR OUCHOR Semiconductor The datasheet is for reference information only Rev 151 FCH47N60NF Rev A1 8 www fairchildsemi com 14444 L34SON J9euueu N A009 ANOONZVHOS
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FAIRCHILD FCH47N60NF Manual