FAIRCHILD FGL40N120AND Manual
Contents
1. ra ee February 2008 FAIRCHILD ESS SEMICONDUCTOR Features Description e High speed switching Employing NPT technology Fairchild s AND series of IGBTs r 8 z provides low conduction and switching losses The AND series Low saturation voltage Veiga 2 6 V lc 40A offers an solution for application such as induction heating IH e High input impedance motor control general purpose inverters and uninterruptible CO PAK IGBT with ERD t 75ns typ power supplies UPS Applications Induction Heating UPS AC amp DC motor controls and general purpose inverters ae c G TO 264 G C E E Absolute Maximum Ratings Symbol Parameter FGL40N120AND Units Voces Collector Emitter Voltage 1200 V Votre Gate Emitter Voltage 25 V l Collector Current Tc 25 C 64 A S Collector Current Tc 100 C 40 A low Pulsed Collector Current 160 A Ir Diode Continuous Forward Current Tc 100 C 40 A lem Diode Maximum Forward Current 240 A R Maximum Power Dissipation T 25 C 500 W S Maximum Power Dissipation Tc 100 C 200 W Short Circuit Withstand Time SGWT Voge 600V Voge 15V To 125 C 9 ps Ty Operating Junction Temperature 55 to 150 C TsTG Storage Temperature Range 55 to 150 C T Maximum Lead Temp for Soldering 300 C S Purposes 1 8 from Case for 5 seconds Notes 1 Pulse width limited by max junction temperature Thermal Characterist2. 1000 Typical Performance Characteristics continueo Figure 14 Gate Charge Characteristics R 150 Common Emitter T 25 C Gate Emitter Voltage V V 100 Collector Current A 50 100 150 200 Gate Charge Q nC Figure 16 Turn Off SOA 250 Safe Operating Area Voge 15V T 125 C 10 100 Collector Emitter Voltage VM V 1000 Figure 18 Reverse Recovery Current 10 FGL40N120AND Rev A2 www fairchildsemi com 189I LdN A002 GNVOZCLNOV 154 Figure 19 Stored Charge 100 90 tr di dt 200A us 80 70 di dt 100A ps 60 Reverse Recovery Time t_ ns 0 10 20 30 40 50 60 70 Forward Current A Typical Performance Characteristics continues Figure 20 Reverse Recovery Time 400 rr wo Q Ei di dt 200A us 200 100 di dt 100A us Stored Recovery Charge O nC 0 10 20 30 40 50 Forward Current A Figure 21 Transient Thermal Impedance of IGBT 0 01 Thermal Response Zthjc 1E 3 1E 5 a ingle pulse 1E 4 1E 3 0 01 0 1 Rectangular Pulse Duration sec Duty factor D t1 t2 Peak Tj Pdm x Zthjc To 60 70 FGL40N120AND Rev A2 www fairchilds
3. OV f 1MHz 5000 T 25 C _ 4000 T iL 2 o Q E 2 3000 E bai D bai A 2 2000 p 2 Common Emitter E Veg 600V Na 15V I 40A 1000 T 25 C i T 125 C A i 1 10 0 10 20 30 40 50 60 70 Collector Emitter Voltage VM V Gate Resistance R 9 Figure 9 Turn Off Characteristics vs Figure 10 Switching Loss vs Gate Resistance Gate Resistance Common Emitter Common Emitter 4000 Veo 800V Veg 15V I 40A Vao 600V Veg ie hopp T 25 C 40A T 125 C T 20 03 z as ep z T 125 C v a E E 2 100 2 SE SE 2 S A A 10 e 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 Gate Resistance PR 2 Gate Resistance R Figure 11 Turn On Characteristics vs Figure 12 Turn Off Characteristics vs Collector Current Collector Current 20 30 40 50 60 70 80 5 www fairchildsemi com FGL40N120AND Rev A2 189I LdN A002 GNVOZCLNOV 154 Common Emitter V 15V R 50 T 25 C Figure 13 Switching Loss vs Collector Current T 125 C Switching Loss mJ 20 30 40 50 60 70 Collector Current A Figure 15 SOA Characteristics 80 X Continuous Single Nonrepetitive Collector Current Ic A Pulse Tc 25 C Curves must be derated linearly with increase in temperature 0 1 1 10 100 Collector Emitter Voltage V V Figure 17 Forward Characteristics
4. ECIFICALLY THE WARRANTY THEREIN WHICH COVERS THESE PRODUCTS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which 2 Accritical component in any component of a life support device a are intended for surgical implant into the body or b or system whose failure to perform can be reasonably support or sustain life and c whose failure to perform when expected to cause the failure of the life support device or properly used in accordance with instructions for use provided system or to affect its safety or effectiveness in the labeling can be reasonably expected to result in a significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Rev 133 9 www fairchildsemi com FGL40N120AND Rev A2 189I LdN AO GNVO2LNOV 154
5. Ig 40A 110 e ns ti Fall Time Re 59 Veg 15V 40 80 ns Eon Turn On Switching Loss Inductive Load T 25 C S 23 3 45 md Eoff Turn Off Switching Loss 1 1 1 65 mJ Ets Total Switching Loss e 3 4 5 1 mJ ta on Turn On Delay Time Ge 20 ns ty Rise Time 25 ns Loan Turn Off Delay Time Voc 600V Ig 40A 120 ns t Fall Time Re 59 Veg 15V 45 ns Eon Turn On Switching Loss Ind tive ee 2 5 g mJ Eoff Turn Off Switching Loss 1 8 mJ Ets Total Switching Loss ee 4 3 Ze mJ Qg Total Gate charge 220 330 nC Be Gate Emitter Charge D SE le 40A 25 38 nC Qgc Gate Collector Charge 130 195 nC 2 www fairchildsemi com FGL40N120AND Rev A2 189I LdN A002 GNVOCLNOV154 Electrical Characteristics of DIODE 5 25 c uniess otherwise noted Symbol Parameter Test Conditions Min Typ Max Units lF 40A To 25 C es 3 2 4 0 Vem Diode Forward Voltage V To 125 C 2 7 To 25 C 75 112 trr Diode Reverse Recovery Time nS Tc 125 C 130 i Diode Peak Reverse Recovery Ir 40A To 25 C S 8 12 d Current di dt 200A us To 125 C ae 13 S Te 25 C 300 450 Qrr Diode Reverse Recovery Charge nc To 125 C 845 3 www fairchildsemi com FGL40N120AND Rev A2 189I LdN A002 GNVOCLNOV 154 Typical Performance Characteristics Figure 1 Typical Output Characteristics Collector Curr
6. emi com 189I LdN A002 GNVOCLNOV 154 Mechanical Dimensions F F a gu J nO 1991 LdN A002 GNVOCILNOV154 8 www fairchildsemi com FGL40N120AND Rev A2 pee El FAIRCHILD eae a EEC ERE SEMICONDUCTOR TRADEMARKS The following includes registered and unregistered trademarks and service marks owned by Fairchild Semiconductor and or its global subsidianries and is not intended to be an exhaustive list of all such trademarks ACEx FPS Build it Now FRFET CorePLUS Global Power Resources CROSSVOLT Green FPS CTL Green FPS e Series Current Transfer Logic GTO EcoSPARK i Lo EZSWITCH IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter EZSWITCH and FlashWriter are trademarks of System General Corporation used under license by Fairchild Semiconductor DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS SP
7. ent A Collector Emitter Voltage VM V Figure 3 Saturation Voltage vs Case Temperature at Variant Current Level Common Emitter V 15V Collector Emitter Voltage V V 25 50 75 100 125 Case Temperature T C Figure 5 Saturation Voltage vs Vor Collector Emitter Voltage V V 0 4 8 12 16 20 Gate Emitter Voltage V V Figure 2 Typical Saturation Voltage Characteristics Common Emitter V 15V T 25 C T 125 C Collector Current A 0 2 4 6 Collector Emitter Voltage V V Figure 4 Load Current vs Frequency IV 600V Load Current peak of square wave Load Current A Duty cycle 50 T 100 C Power Dissipation 100W 0 1 1 10 100 1000 Frequency kHz Figure 6 Saturation Voltage vs Vor Common Emitter T 125 C Collector Emitter Voltage VI 0 4 8 12 16 20 Gate Emitter Voltage V V FGL40N120AND Rev A2 www fairchildsemi com 189I LdN A002 GNVOZCLNOV 154 Typical Performance Characteristics continues Figure 7 Capacitance Characteristics Figure 8 Turn On Characteristics vs Gate Resistance 6000 Common Emitter i iia aes a a Voge
8. ics Symbol Parameter Typ Max Units Royc IGBT Thermal Resistance Junction to Case Ge 0 25 C W Regc DIODE Thermal Resistance Junction to Case 0 7 C W Dau Thermal Resistance Junction to Ambient a 25 C W 2008 Fairchild Semiconductor Corporation FGL40N120AND Rev A2 www fairchildsemi com 189I LdN A00Z GNVO2LNOV15S Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGL40N120AND FGL40N120AND TO 264 x 25 Electrical Characteristics of the IGBT _ v 25 c uniess otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVcES Collector Emitter Breakdown Voltage Vge OV I 1mA 1200 V E ee Coefficient of Breakdown Vee OV lc 1mA 8 06 E Viet IcES Collector Cut Off Current Voce Vees Vee OV 1 mA IGES G E Leakage Current Vee Vees Vece OV 250 nA On Characteristics VGE th G E Threshold Voltage Io 250A Voce Vee 3 5 5 5 7 5 V Io 40A Vee 15V 2 6 3 2 V Voe Collector to Emitter Io 40A Vee 15V x 29 V sat Saturation Voltage To 125 C Io 64A Vor 15V 3 15 V Dynamic Characteristics Cies Input Capacitance 3200 pF Gas Output Capacitance dE eer VaE SOY 370 pF Cres Reverse Transfer Capacitance 125 pF Switching Characteristics ta on Turn On Delay Time 15 Ge ns tr Rise Time 20 ns Joe Turn Off Delay Time Voc 600V
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FAIRCHILD FGL40N120AND Manual