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ON Semiconductor MAC16HCD/MAC16HCM/MAC16HCN handbook

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1. MACIGHCDI MAC16HCD MAC16HCM MAC16HCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full wave ac control applications such as motor controls heating controls or dimmers or wherever full wave silicon gate controlled devices are needed High Commutating di dt and High Immunity to dv dt 125 C Uniform Gate Trigger Currents in Three Quadrants Q1 Q2 and Q3 Blocking Voltage to 800 Volts ON Semiconductor http onsemi com TRIACS 16 AMPERES RMS 400 thru 800 VOLTS On State Current Rating of 16 Amperes RMS at 80 C High Surge Current Capability 150 Amperes Industry Standard TO 220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Device Marking Logo Device Type e g MAC16HCD Date Code MT2 HR MT1 G MAXIMUM RATINGS T 25 C unless otherwise noted ating Peak Repetitive Off State Voltage 1 VDRM Volts TJ 40 to 125 C Sine Wave VRRM 50 to 60 Hz Gate Open MAC16HCD 400 MAC16HCM 600 MAC16HCN 800 On State RMS Current Full Cycle Sine Wave 50 to 60 Hz i IT RMS 16 A ie TO 220AB Peak Non Repetitive Surge Current 150 221 One Full Cycle 60 Hz Ty 125 C STYLE 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Circuit Fusing Consideration 2 121 93 A2sec t 8 33 ms Peak Gate Power PGM 20 Watts Pulse Width lt 1 0 us 80 C Avera
2. customer application by customer s technical experts SCILLC does not convey any license under its patent rights nor the rights of others SCILLC products are not designed intended or authorized for use as components in systems intended for surgical implant into the body or other applications intended to support or sustain life or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application Buyer shall indemnify and hold SCILLC and its officers employees subsidiaries affiliates and distributors harmless against all claims costs damages and expenses and reasonable attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized use even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part SCILLC is an Equal Opportunity Affirmative Action Employer PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment Literature Distribution Center for ON Semiconductor P O Box 5163 Denver Colorado 80217 USA Phone 303 675 2175 or 800 344 3860 Toll Free USA Canada Fax 303 675 2176 or 800 344 3867 Toll Free USA Canada Email ONlit hibbertco com CENTRAL SOUTH AMERICA Spanish Phone 303 308 7143 Mon Fri 8 00am to 5 00pm MST Email ONlit spanish h
3. 380 0405 966 10 28 C 0160 0 190 407 482 D 0 025 0 035 064 088 0142 0 147 361 373 G 0095 0 105 242 266 0 155 280 393 J 0018 0 025 046 064 0500 0562 1270 1427 L 0045 0 060 115 152 N 0190 0210 483 533 J 0100 0 120 254 304 0080 204 279 S 0045 0 055 1 15 139 T 0235 0255 597 647 u 0000 0 050 000 127 0045 118 z 000 1 20 STYLE 4 PIN 1 MAIN TERMINAL 1 2 MAIN TERMINAL 2 3 GATE 4 MAIN TERMINAL 2 http onsemi com 6 MAC16HCD MAC16HCM MAC16HCN Notes http onsemi com 7 MAC16HCD MAC16HCM MAC16HCN ON Semiconductor and trademarks Semiconductor Components Industries LLC SCILLC SCILLC reserves the right to make changes without further notice to any products herein SCILLC makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does SCILLC assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation special consequential or incidental damages Typical parameters which may be provided in SCILLC data sheets and or specifications can and do vary in different applications and actual performance may vary over time All operating parameters including Typicals must be validated for each
4. ge Gate Power PG AV Main Terminal 2 ORDERING INFORMATION MET MAC16HCD TO220AB 50 Units Rail 8 3 ms 80 C Operating Junction Temperature Range TJ 40 to C 125 Storage Temperature Range Tstg 40 to 150 1 VDRM and for all types can be applied on a continuous basis Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded MAC16HCM TO220AB 50 Units Rail MAC16HCN TO220AB 50 Units Rail Preferred devices are recommended choices for future use and best overall value Publication Order Number MAC16HC D O Semiconductor Components Industries LLC 1999 1 February 2000 Rev 0 MAC16HCD MAC16HCM MAC16HCN THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1 8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS as 25 C unless otherwise noted Electricals apply in both directions IT we ww OFF CHARACTERISTICS Peak Repetitive Blocking Current Vp Rated VDRM VRRM Gate Open ON CHARACTERISTICS Gate Trigger Current T dc Vp 12 V 100 9 MT2 G MT2 G MT2 G Holding Current Vp 12 V Gate Open Initiating Current 150 mA App pa Latch Current Vp 12 V Ig 50 mA MT2 G MT2 G MT2 G VGT Gate Trigger Voltage Continuou
5. ibbertco com ASIA PACIFIC LDC for ON Semiconductor Asia Support Phone 303 675 2121 Tue Fri 9 00am to 1 00pm Hong Kong Time Fax Response Line 303 675 2167 or 800 344 3810 Toll Free USA Canada N American Technical Support 800 282 9855 Toll Free USA Canada EUROPE LDC for ON Semiconductor European Support German Phone 1 303 308 7140 M F 1 00pm to 5 00pm Munich Time Email ONlit german hibbertco com French Phone 1 303 308 7141 M F 1 00pm to 5 00pm Toulouse Time Email ONlit french hibbertco com English Phone 1 303 308 7142 M F 12 00pm to 5 00pm UK Time Email ONlit hibbertco com EUROPEAN TOLL FREE ACCESS 00 800 4422 3781 Available from Germany France Italy England Ireland Toll Free from Hong Kong amp Singapore 001 800 4422 3781 Email ONlit asia hibbertco com JAPAN ON Semiconductor Japan Customer Focus Center 4 32 1 Nishi Gotanda Shinagawa ku Tokyo Japan 141 8549 Phone 81 3 5740 2745 Email r14525 onsemi com ON Semiconductor Website http onsemi com For additional information please contact your local Sales Representative MAC16HC D
6. l Latching Current versus Junction Temperature 4 6 8 10 IT Av AVERAGE ON STATE CURRENT AMP Figure 6 On State Power Dissipation http onsemi com 4 e IT INSTANTANEOUS ON STATE CURRENT AMP 00 10 0 1 MAC16HCD MAC16HCM MAC16HCN MAXIMUM Ty 125 C 7 MAXIMUM Ty 25 C r t TRANSIENT THERMAL RESISTANCE 0 0 5 1 1 5 2 2 5 3 3 5 VT INSTANTANEOUS ON STATE VOLTAGE VOLTS Figure 7 Typical On State Characteristics 0 1 NORMALIZED 0 01 http onsemi com 5 1 10 100 1000 10000 t TIME ms Figure 8 Typical Thermal Response MAC16HCD MAC16HCM MAC16HCN PACKAGE DIMENSIONS TO 220AB CASE 221A 09 ISSUE Z NOTES NS 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH 3 DIMENSION 2 DEFINES A ZONE WHERE ALL S BODY AND LEAD IRREGULARITIES ARE ALLOWED co INCHES MILLIMETERS i DIM MIN MAX MIN MAX A A 0570 0 620 1448 15 75 u 0
7. mi com 3 HOLDING CURRENT mA IGT GATE TRIGGER CURRENT mA Tc CASE TEMPERATURE C 100 MT2 NEGATIVE 10 MT2 POSITIVE MAC16HCD MAC16HCM MAC16HCN 1 40 25 10 5 TJ JUNCTION TEMPERATURE C 20 35 50 65 80 95 110 125 Figure 1 Typical Gate Trigger Current versus Junction Temperature 1 40 25 10 5 20 35 50 65 80 95 110 125 TJ JUNCTION TEMPERATURE C Figure 3 Typical Holding Current versus Junction Temperature 125 120 115 110 105 100 95 90 85 80 75 70 60 30 90 120 180 DC 4 6 8 10 12 IT rms RMS ON STATE CURRENT AMP Figure 5 Typical RMS Current Derating 1 10 VGT GATE TRIGGER VOLTAGE VOLT 0 40 40 25 10 5 100 E Q2 5 Qt T T Q3 2 10 3r o 3 Pray AVERAGE POWER DISSIPATION WATTS 1 00 0 90 0 80 0 70 0 60 0 50 20 35 50 65 80 TJ JUNCTION TEMPERATURE C 95 110 125 Figure 2 Typical Gate Trigger Voltage versus Junction Temperature 1 40 25 10 5 20 35 50 65 80 9 110 125 TJ JUNCTION TEMPERATURE C Figure 4 Typica
8. s dc Vp 12 V RL 100 MT2 G 0 5 MT2 G 0 5 MT2 G 0 5 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current Vp 400 V ITM 6A Commutating dv dt 20 V us CL 10 uF Gate Open Ty 125 C f 250 Hz with Snubber LL 40 mH Critical Rate of Rise of Off State Voltage dv dt V us Vp Rated Exponential Waveform Gate Open Ty 125 C Repetitive Critical Rate of Rise of On State Current IPK 50 A PW 40 usec diG dt 200 mA usec f 60 Hz 1 Pulse Test Pulse Width lt 2 0 ms Duty Cycle lt 2 http onsemi com 2 MAC16HCD MAC16HCM MAC16HCN Voltage Current Characteristic of Triacs Bidirectional Device Current Quadrant 1 Symbol Parameter yn MainTerminal 2 VDRM Peak Repetitive Forward Off State Voltage una Pad IDRM Peak Forward Blocking Current IH VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM OR IRRM Peak Reverse Blocking Current lt gt lt gt VTM Maximum On State Voltage fT off state Voltage IH Holding Current H7 IDRM at VDRM Quadrant 3 VIM MainTerminal 2 Quadrant Definitions for a Triac MT2 POSITIVE Positive Half Cycle Quadrant Il Quadrant 1 Quadrant Ill Quadrant IV MT2 NEGATIVE Negative Half Cycle All polarities are referenced to MT1 With in phase signals using standard AC lines quadrants and Ill are used http onse

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