MOTOROLA MAC08BT1 series handbook
Contents
1. D amp 10 22210 a z 150 TYPICAL a ML C 140 MAXIMUM Pid 130 5 DEVICE MOUNTED 21 10 aS FIGURE 1 AREA L 4 22 B PCB WITH TAB AREA tp x 100r 7 AS SHOW ES 2 2 Wry 123 5 01 j nH z 1 lt TYPICALATTy 110 C 2 60 SERIE ES E MAX AT TJ 110 C lt MINIMUM ee 9 MAXATTy 25 C 2 40 FOOTPRINT 0 076 cm 1 0010 15 20 30 10 50 30 20 40 60 82 10 INSTANTANEOUS ON STATE VOLTAGE VOLTS FOIL AREA cm2 Figure 2 On State Characteristics Figure 3 Junction to Ambient Thermal Resistance versus Copper Tab Area 110 110 la la 100 Bv 100 B 150 5 90 60 90 CONDUCTION E 90 gt 80 ANGLE gt 80 SE Sk dc 5 70 70 a 180 gt 60 60 120 gt x lt zEs Sg 50 1 0 om2 FOIL AREA os lt 2 MINIMUM FOOTPRINT 4o 50 OR 60 Hz MN aa lt 50 OR 60 Hz 30 30 ot CONDUCTION ANGLE 0 0 1 0 2 0 3 0 4 0 5 205 0 1 0 2 0 3 0 4 0 5 0 6 0 7 T RMS RMS ON STATE CURRENT AMPS Ir RMS RMS ON STATE CURRENT AMPS Figure 4 Current Derating Minimum Pad Size Fi2. 0 50 lt amp 40 MAIN TERMINAL 2 amp POSITIVE 2 3 0 9 d 2 0 9 MAIN TERMINAL 1 E POSITIVE 1 0 9 20 0 20 40 60 80 100 TJ JUNCTION TEMPERATURE Figure 15 Typical Holding Current Variation 3 44 GATE TRIGGER VOLTAGE VOLTS 10 t 1013 E 2 IGT2 o IGT4 m lari 10 tc 04 40 220 0 20 40 60 80 100 TJ JUNCTION TEMPERATURE C Figure 14 Typical Gate Trigger Current Variation VGT4 VGT2 1 0 3 40 00 0 20 40 60 80 100 JUNCTION TEMPERATURE Figure 16 Gate Trigger Voltage Variation Motorola Thyristor Device Data
3. 0 MOTOROLAJ TECHNICAL DATA SOT 223 Triac Silicon Bidirectional Thyristors Designed for use in solid state relays MPU interface TTL logic and other light industrial or consumer applications Supplied in surface mount package for use in automated manufacturing e Sensitive Gate Trigger Current in Four Trigger Modes e Blocking Voltage to 600 Volts e Glass Passivated Surface for Reliability and Uniformity e Surface Mount Package e Devices Supplied on 1 K Reel MAXIMUM RATINGS T 25 C unless otherwise noted Peak Repetitive Blocking Voltage 1 1 2 Sine Wave Gate Open Ty 25 to 110 C MACO8BT1 MACO8DT1 MACO8MT1 1 Series Motorola preferred devices TRIAC 0 8 AMPERE RMS 200 thru 600 Volts CASE 318E 04 SOT 223 STYLE 11 200 400 600 Peak Non repetitive Surge Current One Full Cycle 60 Hz Tc 25 Circuit Fusing Considerations t 8 3 ms LI ee UN 7 Average Gate Power 80 t 8 3 ms THERMAL CHARACTERISTICS Thermal Resistance Junction to Ambient RJA 156 C W PCB Mounted per Figure 1 Thermal Resistance Junction to Tab ReJT 25 C W Measured on Anode Tab Adjacent to Epoxy 1 VDRM for all types can be applied on a continuous basis Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded Preferred devices are Motorola recommended choices for future use and best overall v
4. 5204 22 25 e 0 a 180 60 E gt F 0 3 de m 2 gt 455 02 i a 0 1 0 0 01 0 0 1 0 2 03 04 0 5 0 6 0 7 0 8 0 0001 0 001 0 01 0 1 1 0 10 100 IT RMS RMS ON STATE CURRENT AMPS t TIME SECONDS Figure 8 Power Dissipation Figure 9 Thermal Response Device Mounted on Figure 1 Printed Circuit Board 1N4007 MEASURE 75 VRMS ADJUST FOR CHARGE a 60 Hz Vac TRIGGER CONTROL T Ky 5 0 047 T o ADJUST FOR CHARGE if 5yF NON POLAR oc CL Component values are for verification of rated dv dt c See AN1048 for additional information Figure 10 Simplified Q4 dv dt c Test Circuit 10 10 80 60 5 5 5 5 9 1109 E 3S Ped 5 00 5 VpRM 200 V gej 8 8 fet 2ty 6f liy oL DRM i d 00 10 710 10 60 70 80 90 100 110 T A mS TJ JUNCTION TEMPERATURE Figure 12 Typical Commutating dv dt versus Junction Temperature at 0 8 Amps RMS 3 43 Series 60 600 Vp TJ 110 C 50 MAIN TERMINAL 42 T POSITIVE i gt 5 40 3 e 30 4 MAIN TERMINAL POSITIVE 2010 100 1000 10 000 RG MAIN TERMINAL 1 RESISTANCE OHMS Figure 13 Exponential Static dv dt versus Gate Main Terminal 1 Resistance 6
5. alue REV 1 3 40 Motorola Thyristor Device Data Series ELECTRICAL CHARACTERISTICS 25 unless otherwise noted 22 Symbol Mm Mex Unt Peak Repetitive Blocking Current IDRM Vp Rated VpnM Gate Open Ty 25 C 10 Ty 110 C 200 Maximum On State Voltage Either Direction 1 9 Volts IT 1 1 A Peak TA 25 C Gate Trigger Current Continuous dc All Quadrants Vp 7 0 RL 100 Q Holding Current Either Direction Vp 7 0 Vdc Gate Open Initiating Current 20 mA Gate Open Gate Trigger Voltage Continuous dc All Quadrants Vp 7 0 RL 100 Critical Rate of Rise of Commutation Voltage f 250 Hz ITM 1 0 A Commutating di dt 1 5 A mS On State Current Duration 2 0 mS VpRm 200 V Gate Unenergized 110 C Gate Source Resistance 150 Q See Figure 10 Critical Rate of Rise of Off State Voltage Vpk Rated Vprm 110 C Gate Open Exponential Method Ld BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR BOARD THICKNESS 65 MIL FOIL THICKNESS 2 5 MIL MATERIAL G10 FIBERGLASS BASE EPOXY Figure 1 PCB for Thermal Impedance and Power Testing of SOT 223 Motorola Thyristor Device Data 3 41 Series
6. gure 5 Current Derating 1 0 cm Square Pad Reference Ambient Temperature Reference Ambient Temperature 110 110 gt 0 be 6100 30 wu 105 60 a conpuction Eo 90 ANGLE 52 100 OE 909 2 5 E 56 a 180 o 25 9 90 z 120 z a 120 Se lt x 5 80 utm REFERENCE elle cz 4 0 cm2 FOIL AREA FIGURE 1 60 85 CONDUCTION 50 80 ANGLE 0 0 1 0 2 03 04 05 06 07 08 0 0 1 0 2 03 04 05 06 07 08 IT RMS RMS ON STATE CURRENT AMPS IT RMS ON STATE CURRENT AMPS Figure 6 Current Derating 2 0 cm Square Pad Figure 7 Current Derating Reference Ambient Temperature Reference MT2 Tab 3 42 Motorola Thyristor Device Data Series di dtc RATE OF CHANGE OF COMMUTATING CURRE Figure 11 Typical Commutating dv dt versus Current Crossing Rate and Junction Temperature Motorola Thyristor Device Data 1 0 1 0 09 4 E g 08 a2 H 07 __ CONDUCTION N gs ANGLE c lt r 120 bo 5 05 T 8
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MOTOROLA MAC08BT1 series handbook