IXYS HiPerFAST IGBT ISOPLUS247 Lightspeed 2 Series (Electrically Isolated Back Surface) IXGR 60N60C2 IXGR 60N60C2D1 handbook
Contents
1. EX Ys HiPerFAST IGBT IXGR 60N60C2 V 600 V ISOPLUS247 aa quo ua Lightspeed 2 Series CE sat 35 n Electrically Isolated Back Surface fi typ C Preliminary Data Sheet G G E E IXGR C2 IXGR C2D1 Symbol Test Conditions Maximum Ratings MM ISOPLUS247 Vos T 25 C to 150 C 600 V IXGR 9 Veer T 25 C to 150 C R 1 MQ 600 V p G Voes Continuous 20 V c t ISOLATED TAB V agli Transient 30 V G Gate C Collector m T 25 C limited by leads 75 A FEN lento Tg 110 C 48 A Feat i T 110 C IXGR60NG0C2D1 39 gp REM lcu T 25 C 1ms 300 A DCB Isolated mounting tab Meets TO 247AD package Outline SSOA Ve 15V Ty 125 C R 100 lon 100 A High current handling capability RBSOA Clamped inductive load V lt 600 V Latest generation HDMOS process MOS Gate turn on P T 25 250 W drive simplicity T 55 150 C I T 150 C Applications Tous 55 150 C Uninterruptible power supplies UPS Viso 50 60 Hz RMS t 1m 2500 y Switched mode and resonant mode power supplies Weight 5 g AC motor speed control DC servo and robot drives Maximum lead temperature for soldering 300 C DC choppers 1 6 mm 0 062 in from case for 10 s Advantages Symbol TestConditions Characteristic Values Easy assembly T 25 C unless otherwise specified High2. Vor Volts T 125 C 25 C 40 C 5 6 7 8 9 0 n 2 B H 6 Veg Volts 2004 IXYS All rights reserved EX YS IXGR 60N60C2 IXGR 60N60C2D1 Fig 7 Transconductance n o oO 5 3 g o Ka 2 a E E ly D Ww 0 25 50 75 00 25 7150 15 200 I o Amperes Fig 9 Dependence of Eo on le 5 4 3 23 3 s 23 E 52 Ww 5 Ww 1 0 20 30 40 50 60 70 80 90 100 o Amperes Fig 11 Gate Charge Capacitance pF 0 20 40 60 80 100 20 140 Q 5 nanoCoulombs IXYS reserves the right to change limits test conditions and dimensions Fig 8 Dependence of E on Rg T Degrees Centigrade Fig 12 Capacitance LilXYS IXGR 60N60C2 IXGR 60N60C2D1 Ritn se C1W 0 55 0 45 0 35 0 25 Fig 13 Maximum Transient Thermal Resistance Pulse Width milliseconds 1000 2004 IXYS All rights reserved EX YS IXGR 60N60C2 IXGR_60N60C2D1 160 A 140 120 100 Fig 14 2 0 0 5 0 0 F
3. T 100 C 83 A V 7 100 V l 1 A di dt 200 A ms V 30 V 35 ns Rinsc 0 85 KW Note 1 Pulse test t lt 300 us duty cycle lt 2 2 Ry pcs IS the thermal resistance junction to internal side of DCB substrate 3 Ruc is the thermal resistance junction to external side of DCB substrate IXYS reserves the right to change limits test conditions and dimensions IXYS MOSFETs and IGBTs are covered byoneormore 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 381 025 6 404 065B1 6 162 665 6 534 343 6 583 505 ofthefollowing U S patents 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 5 486 715 6 306 728B1 6 259 123B1 6 306 728B1 6 683 344 LiIXYS IXGR GONGOC2D Fig 1 Output Characteristics Fig 2 Extended Output Characteristics 25 Deg C 25 deg C 200 Vee 15V 75 13V 1N 9v 150 8 8 v5 8 E 100 o 35 ov 50 25 mv 0 1 15 2 25 3 3 5 4 4 5 Veg Volts Fig 3 Output Characteristics Fia 4 T ture D d FV ig 4 Temperature Dependence o 125 Deg C g p p CE sat 12 11 3 Vee 15V lc 100A N 1 8 E o 3 0 9 amp 208 c7 50A x u gt 07 c7 25A 0 6 0 5 25 50 75 100 125 150 Veg Volts T Degrees Centigrade Fig 5 Collector to Emitter Voltage Fig 6 Input Admittance vs Gate to Emiiter voltage
4. ig 17 Dynamic parameters Q I Forward current I versus V 40 80 120 C 160 Ty RM 1000 0 100 A us 1000 di dt Fig 15 Reverse recovery charge Q versus di dt T 100 C ns V 300V 130 t 120 120A l 60A 110 I 30A 7 100 90 80 0 200 400 600 Aus 1000 di dt Fig 18 Recovery time t versus di_ dt 40 20 0 O 200 400 600 Aps 1000 di dt Fig 16 Peak reverse current I versus di dt 0 8 0 4 0 O 200 400 600 Aus 1000 di dt Fig 19 Peak forward voltage V and versus T t versus di dt 1 Constants for Zc Calculation K W i Rn K W t s e 1 0 3073 0 0055 Zw 2 0 3533 0 0092 3 0 0887 0 0007 0 01 4 0 1008 0 0399 0 001 0 0001 IDSEP 2x61 06A 0 00001 0 0001 0 001 0 01 0 1 S 1 t Fig 20 Transient thermal resistance junction to case IXYS reserves the right to change limits test conditions and dimensions
5. power density Min Typ Max Very fast switching speeds for high frequency applications BV ccs 1mA V 0V 600 Vann I 250 uA V 3 0 5 0 V lcs Voe Voes GR60N60C2 50 uA Vg OV GR60N60C2D1 650 uA logs Voge OV Vy 20 V 100 nA Vg 50A V 15V T 25 C 2 3 27 V Note 1 T 125 C 2 0 V 2004 IXYS All rights reserved DS99051D 05 04 IXGR 60N60C2 UHIXYS IXGR 60N60C2D1 Symbol Test Conditions Characteristic Values ISOPLUS 247 Outline T 25 C unless otherwise specified Min Typ Max 9 l 250A V 10 V 40 55 S Note 1 3900 pF oe Vo 25 V Vee 20V f 1 MHz 60N60C2 280 pF 60N60C2D 1 320 pF Ces 97 pF Q 140 nC Qp lp 50 A Va 15 V Voe 0 5 Voes 28 nC Q 35 nc INE TERS o Inductive load T 25 C 18 ns S t gt 15 50A V 15V 25 ns lor J Vo 400 V Re Ry 2 0 Q 951150 ns t 35 ns E 0 49 0 8 mJ em Inductive load T 125 C i ns ns r 1 50A V 15V Fo v we VR R 2 0 Q s iua tom f E HE JE 130 ns t 80 ns E 0 92 mJ 2 P pcs Note 2 0 25 K W o This draw ng 1 a a aimen ons Rne Note 3 0 50 KW except screw hole Rcs 0 15 KW Reverse Diode FRED Characteristic Values T 25 C unless otherwise specified Symbol Test Conditions min typ max V I 60A V 2 O V 20 V Note 1 T 150 C 1 39 ls I 60 A Vy 0 V di dt 100 A u
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