IXYS IXGR 40N60C IXGR 40N60CD1 HiPerFAST IGBT ISOPLUS247 (Electrically Isolated Backside) handbook
Contents
1. T 125 C l Il Vg 2 15V 40N60C Vae 0 8 Vors Re Ror 4 7 Q 40N60CD1 CES Remarks Switching ae may increase for ce Clamp gt 0 8 V ee Ro higher T or CES Ruc m 0 15 K W Reverse Diode FRED IXGH40N60CD1 only Characteristic Values T 25 C unless otherwise specified Symbol Test Conditions min typ max V l le Vee 0V T Note 1 T T lt lt l l I Vee 0 V V 100 V di dt 100 A us A II o o WW O1 4 O1 gt t 1 A di dt 100 A us V 30V R 0 90 K W Note 1 Pulse test ps 300 ms duty cycle d lt 2 2 40A IXYS reserves the right to change limits test conditions and dimensions IXYS MOSFETS and IGBTs are covered by one or more of the following U S patents 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 5 486 715 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 381 0252. LLLI TXGRAON 060 nIXYS HiPerFAST IGBT ISOPLUS247 Advanced Technical Information IXGR 40N60C IXGR 40N60CD1 Electrically Isolated Backside C C G G E E D1 Symbol TestConditions Maximum Ratings More T 25 C to 150 C 600 V Veen T 25 C to 150 C Ra 1 MO 600 V V aes Continuous 20 V M GEN Transient 30 V baa Te 25 C 15 A Iun T 110 C 35 A lon T 25 C 1 ms 150 A SSOA Ve 7 15V Ty 125 C R 100 lon 80 A RBSOA Clamped inductive load 0 8 V E To 9295 200 W T 55 150 ue Lu 150 C pm 55 150 ue Maximum lead temperature for soldering 300 G 1 6 mm 0 062 in from case for 10 s M Mounting torque M3 Weight Symbol TestConditions BV 5 l 250yA V 0V IL 750 pA Vti lc 250 HA Vo Ve I 500 pA lees V 0 8 Voes T 25 C Vg 70V note 1T 25 C T 125 C T 125 C Lc Ve 0 V Vo 20 V V okies lc ls Vac 15V 1 13 10N m Ib in 5 g Characteristic Values T 25 C unless otherwise specified Min Typ Max 40N60C 600 V 40N60CD1 600 40N60C 2 5 5 0 V 40N60CD1 2 5 5 0 V 40N60C 200 LA 40N60CD1 650 LA 40N60C 1 mA 40N60CD1 3 mA m 100 nA 25 V V 600 V I 75A CE sat B 2 5 V Cayo 7 75ns ISOPLUS 247 WM 53432 2 E Isolated Backside G Gate E Emitter C Collector Patent pending Features DCB Isolated mounting tab Meets TO 247AD package Outline High current handling capa
3. bility Latest generation HDMOS process MOS Gate turn on drive simplicity Applications Uninterruptible power supplies UPS Switched mode and resonant mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications 2001 IXYS All rights reserved 98803 01 01 IXGR 40N60C IXGR 40N60CD1 Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified min typ max 9 lL h Ve s 10V 30 40 S Pulse test t lt 300 us duty cycle lt 2 3300 pF 40N60C 310 pF 25 V V 0 V f 1 MHz 40N60CD1 370 pF 116 nC bi Sel be M 2 L l l Vok 15 V Voe 0 5 Nofs a s n 59 nC 1 Gate 2 Drain Collector 25 PAPEN 247 CS Ne 3 Source Emitter Lion Inductive load T 25 C NS 4 no connection t I I V 15V 30 ns GE Dim Millimeter Inches Lor Vee 0 8 N ets Re Roi 4 7 Q 100 150 ns Min Max Min Max Feier Switching M may increase 75 150 ns T i a es for V Clamp gt 0 8 V ccs higher T or 191 246 075 085 inereaced Ro i 1 14 1 40 045 055 1 91 2 13 075 084 2 92 3 12 115 123 0 60 0 80 024 031 20 80 21 34 819 840 15 75 16 13 620 635 5 45 BSC 215 BSC 19 81 20 32 780 800 3 81 4 32 150 170 5 59 620 220 244 4 32 483 170 190 Inductive load
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