general semiconductor MPS2907A SMALL SIGNAL TRANSISTORS (PNP) handbook
Contents
1. Ic 10 pA le 0 PCBO ve Collector Emitter Breakdown Voltage Volt at Ic 10 mA IB 0 RIES oe Emitter Base Breakdown Voltage Volt at lE 10 uA Ic 0 BEES a Collector Emitter Saturation Voltage at lc 150 mA lB 15 mA VCEsat Volts at Ic 500 mA lB 50 mA VCEsat Volts Base Emitter Saturation Voltage at Ic 150 mA lB 15 mA VBEsat Volts at lc 500 mA lB 50 mA VBEsat Volts Collector Cutoff Current I nA at VeB 0 5 V VcE 30 V ca Collector Cutoff Current ICBO uA at Vcs 50 V lE 0 0 01 at VcB 50 V le 0 Ta 150 C 10 Base Cutoff Current nA at VeB 0 5 V VcE 30 V BL DC Current Gain at VceE 10 V lc 0 1 mA at VcE 10 V lc 1 mA at VcE 10 V lc 10 mA at VcE 10 V Ic 150 mA at VceE 10 V lc 500 mA Gain Bandwidth Product MHz at VcE 20 V lc 50 mA f 100 MHz Output Capacitance Emitter Base Capacitance GENERAL 6 SEMICONDUCTOR MPS2907A ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Turn On Time at lB1 15 mA lc 150 mA Vcc 30 V Delay Time See Fig 1 at IB1 15 mA lc 150 mA Vcc 30 V Rise Time See Fig 1 at IB1 15 mA lc 150 mA Vcc 30 V Turn Off Time at lB1 IB2 15 mA lc 150 mA Vcc 6 V Storage Time See Fig 2 at IB1 IB2 15 mA Ic 150 mA Vcc 6 V Fall Time See Fig 2 a2. PREM RRNARY O PRELIMINARY PRELIMINARY MPS2907A SMALL SIGNAL TRANSISTORS PNP ee FEATURES 0 181 4 6 0 142 3 6 PNP Silicon Epitaxial Planar Transistor for ar niie switching and amplifier applications amp z On special request this transistor is also at manufactured in the pin configuration TO 18 This transistor is also available in the E SOT 23 case with the type designation MMBT2907A max 0 022 0 55 ler 0 098 2 5 1 I T MECHANICAL DATA B Case TO 92 Plastic Package Dimensions in inches and millimeters Weight approx 0 1 8g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Collector Base Voltage Owe o o Volts Collector Emitter Voltage Oow fw Volts Emitter Base Voltage Volts Collector Current lc Ooo ww mA Power Dissipation at Ta 25 C Prot 625 mW Derate above 25 C 2 5 0 mW C Power Dissipation at Tc 25 C Prot 1 5 mW Derate above 25 C S 12 mW C Thermal Resistance Junction to Ambient Air 200 C W Thermal Resistance Junction Case 83 3 C W Junction Temperature 150 C Storage Temperature Range Ts 500 to 150 C NOTES 1 Valid provided that leads are kept at ambient temperature A GENERAL 12 16 98 6 SEMICONDUCTOR MPS2907A ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Collector Base Breakdown Voltage Volt at
3. t IB1 IB2 15 mA lc 150 mA Vcc 6 V SYMBOL MIN MAX UNIT SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 DELAY AND RISE TIME TEST CIRCUIT 30V INPUT Zo 502 PRF 150 PPS Rise Time lt 2 0 ns P W lt 200 ns 0 sev 200ns To Oscilloscope Rise Time lt 5 0 ns FIGURE 2 STORAGE AND FALL TIME TEST CIRCUIT 15 V 6 0V INPUT Zo 502 PRF 150 PPS Rise Time lt 2 0 ns P W lt 200 ns 0 sov 200ns To Oscilloscope Rise Time lt 5 0 ns
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general semiconductor MPS2907A SMALL SIGNAL TRANSISTORS (PNP) handbook