Home

FAIRCHILD PN/MPS/FTSO3638 PN/MPS/FTSO3638A handbook

1. 1 0 V 20 lc 300 mA Voce 2 0 V Vceotsus Collector to Emitter Sustaining 25 25 V lc 10 mA ls O Voltage Notes 4 amp 5 VcEtsat Collector to Emitter Saturation 0 25 0 25 V lc 50 mA la 2 5 mA1 Voltage Pulsed Note 5 1 0 1 0 V lc 300 mA ls 30 mA Veeisat Base to Emitter Saturation 1 1 Shi V lo 50 mA lg 2 5 mA Voltage Note 5 2 0 0 8 2 0 V Ic 300 mA ls 30 mA Cob Common Base Open Circuit 10 pF Vcs 10V le 0 f 140 kHz Output Capacitance Cib Common Base Open Circuit Input Capacitance PN3638A 35 pF Ves 0 5 V lc 0 f 140 kHz MPS3638A 25 pF Ves 0 5 V lc 0 f 140 kHz Nie Magnitude of Small Signal 1 0 1 5 lc 50 mA Vce 3 0 V Current Gain f 100 MHz hte Small Signal Current Gain PN3638 lc 10 mA Vce 10 V f 1 0 kHz MPS3638 180 lo 10 mA Vc 10 V f 1 0 kHz 100 lc 10 mA Vce 10 V f 1 0 kHz 00 ee hie Input Resistance 2000 Q lc 10 mA Vce 10 V MPS3638 1500 NQ f 1 0 kHz Noe Output Conductance 1200 1200 umhos fc 10 MA Vce 10 V f 1 0 kHz hire Voltage Feedback Ratio 2600 1500 X10 6 2 10 mA Voe 10 V f 1 0 kHz ton Turn On Time 75 75 ns lc 300 mA la1 30 mA test circuit no 536 Vcc 10V tot Turn Off Time 170 170 NE lo 300 mA Is ls2 30 mA test circuit no 536 Vcc 10 V Y E tur PEU AI PD e FAIRCHILD SEMICONDUCTOR ES Ir imt 1 EE
2. DC Pulse Current Gain Note 5 Vcetsat Collector to Emitter Saturation Voltage Note 5 Output Capacitance Magnitude of Common Emitter 1 5 Short Circuit Small Signal Current Gain lc 150 mA Vce 10V lc 500 mA Voe 10 V a B DE 50 nA Vce 50 V Vee 0 1 0 pA Voe 50 V Vse 0 Ta 65 C 40 15 lc 150 mA ls 2 15 m Ves 10 V le 0 f 140 kHz lc 50 mA Vc 5 0 V f 100 MHz Gie Amplifier Power Gain test circuit no 238 d Collector Efficiency Zero Signal Vce 15 V lc 0 Ra 140 0 Re 260 Q f 30 MHz Pin 40 mW Ic 300 mA ts 30 mA test circuit no 238 ak eo Cc O ton Turn On Time test circuit no 241 Turn Off Time test circuit no 242 lu MN Zero Signal Vce 15 V lc 0 Ra 140 0 R 260 Q f 30 MHz Pin 40 mW NELJG lc 300 mA la la2 30 MA E 3643 SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS BVceotsus Collector to Emitter Breakdown 30 V Ic 10 mA lg 0 Voltage Notes 4 amp 5 BVces Collector to Emitter Breakdown V lc 10 pA Vee O Voltage BVcso Collector to Base Breakdown V lc 10 pA le O Voltage BVeso Emitter to Base Breakdown Voltage le 10 pA lc O Ices Collector Cutoff Current Note 5 50 nA Vce 50 V Vee O 1 0 BA se 50 V Vse 0 Ta 66 C hre DC Pulse Current Gain Note 5 100 150 mA V 10 V 25 poe mA Vee 10V VcEtsau Collector t
3. Dz SEMICONDUCTOR au pE M 349696714 D027H4ce 3 l 3469674 FAIRCHILD SEMICONDUCTOR 84D 27422 D m a e a m a a m o PN MPS FTSO3638 37 1 PN MPS FTSO3638A PNP Small Signal General Purpose Amplifiers amp Switches FAIRCHILD A Schlumberger Company Vceo 25 V Min PACKAGE hre 30 Min PN MPS FTSO3638 PN3638 TO 92 100 Min PN MPS FTSO3638A 50 mA PN3638A TO 92 ton 75ns Max Q 300 mA tor 170 ns Max 300 mA MPS3638 TO 92 e Complements PN3641 PN3643 MPS3638A TO 92 i FTSO3638 TO 236AA AB ABSOLUTE MAXIMUM RATINGS Note 1 FTSO3638A TO 236AA AB Temperatures Storage Temperature 55 C to 150 C Operating Junction Temperature 150 C Power Dissipation Notes 2 amp 3 Total Dissipation at PN MPS FTSO 25 C Ambient Temperature 0 625 W 0 350 W 25 C Case Temperature 1 0W Voltages amp Currents Vceo Collector to Emitter Voltage 25 V Note 4 Vcso Collector to Base Voltage 25V Vces Collector to Emitter Voltage 25 V Veso Emitter to Base Voltage 4 0 V Ic Collector Current Note 2 500 mA ELECTRICAL CHARACTERISTICS 25 C Ambient Temperature unless otherwise noted Note 6 3638 3638A SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown 25 25 V lc 100 uA Ve 0 Voltage BVeso Emitter to Base Breakdown 4 0 4 0 V lg 100 pA lc 0 Voltage Ices Collector Reverse Curre
4. O Voltage Collector Reverse Current 10 Voe 3 0 V Vse O A Vce 6 0 V Vee O 1 0 pA Vece 7 3 0V Vee 0 Ta 65 C 1 0 pA Vee 6 0V Vee 0 Ta 65 C lt lt lt lt lt Ices 3 145 FAIRCHILD SEMICONDUCTOR 84 DENM 34691674 0027426 D i SYMBOL CHARACTERISTIC hfe PN MPS FTSO3639 PN MPS FTSO3640 7 37 5 MPS3639 MPS3640 MIN MAX IMIN MAX UNITS TEST CONDITIONS DC Pulse Current Gain 120 lc 10 MA Vee 0 3 V Note 5 20 lc 50 mA Vce 1 0 V Vceosus Collector to Emitter Sustaining 6 0 12 lc 10 mA lp 0 Voltage Note 5 VcEtsat lc 10 mA lg 1 0 mA lc 50 mA ls 5 0 mA vs lc 10 mA lp 1 0 mA Ta 65 C Collector to Emitter Saturation Voltage Note 5 Vattsati Base to Emitter Saturation 0 75 0 95 0 75 0 95 V lc 10 mA lg 0 5 mA Voltage Note 5 0 8 1 0 0 8 ae V lc 10 mA ls 1 0 mA 1 5 V lc 50 mA fs 5 0 mA Cov ton Sip Sais E fo Vac 6 0V le 0 f 140K as es pF Veo 05V lon 0 f 140KHe High Frequency Current NEM lc 10 mA Vce 0 f 100 MHz lc 10 mA Vo 5 0 f 100 MHz lo 50 mA lg 5 0 mA Vec 6 0 V lc 10 mA Is 0 5 MA Veo 1 5 V 35 lc 50 mA ls 1g2 5 0 mA Vec 6 0 V 75 lc 10 mA lg lB2 0 5 mA Veo 1 5 V Turn On Time test circuit no 235 test circuit no 219 Turn Off Time test circuit n
5. Voltage BVcao Collector to Base Breakdown 6 0 12 0 V lc 100 pA lg O Voltage BVeeo Emitter to Base Breakdown 4 0 4 0 le 100 pA lc 0 Voltage l lces Collector Reverse Current Vce 3 0 V Vee O i Voce 6 0 V Vse 0 uA Vee 3 0 V Vee 0 TA 65 C pA Vee 6 0 V Vee 0 Ta 65 C hfe DC Pulse Current Gain 30 lc 10 mA Vee 0 3 V Note 5 20 lc 50 MA Vce 1 0 V NOTES 1 These ratings are limiting values above which the serviceability of any individua semiconductor device may be impaired 2 These are steady state limits The factory shouid be consulted on applications involving pulsed or low duty cycle operations 3 These ratings give a maximum junction temperature of 150 C and TO 92 junction to case thermal resistance ot 125 C W derating factor of 8 0 mW C junction to ambient thermal resistance of 200 C W derating factor of 5 0 mW C TO 236 junction to ambient thermal resistance of 357 C W derating factor of 2 8 mW C Rating refers to a high current point where collector to emitter voltage is lowest Pulse conditions length 300 us duty cycle 1 For product family characteristic curves refer to Curve Set T292 Package mounted on 99 5 alumina 8 mm x 8 mm x 0 6 mm oom ZEE 3 144 FAIRCHILD SEMICONDUCTOR ay DE 34696794 0027425 3 I 3469674 FAIRCHILD SEMICONDUCTOR 84D 27425 D m m PN MPS FTSO3639 PN MPS FTSO3640 1 32 4 ELECTRICA
6. E KENN OCA CICER IR 04 CPU ERRARE pam it ELE YES DOE GE I AA OMM GE CE ES OC HORE AMISSO TET AS LIAUE SLEE Te eae eee EE em Reva TRE ATE SCAT AE reed ies te We USE Oe ae G AAUCSUUSEIun 4e ISIVUCTUWU v Me IO FTE s EET To t ec n EU GA oA Ze YT Sir neris tT au DEM 3469674 0027424 7 TO 3469674 FAIRCHILD SEMICONDUCTOR 84D 27424 D m PN MPS FTSO3639 PN MPS FTSO3640 PNP High Speed Saturated Logic Switches T 5 7 1 5 o m m m Vceo 12 V Min PN MPS3640 PACKAGE tn 25 ns Max 50 mA 60 ns Max 10 mA PN3639 TO 92 tor 35 ns Max 50 mA 75 ns Max 10 mA PN3640 TO 92 Complements PN4274 2N5769 MPS3639 TO 92 MPS3640 TO 92 ABSOLUTE MAXIMUM RATINGS Note 1 FTSO3639 TO 236AA AB FTSO3640 TO 236AA AB Temperatures Storage Temperature 55 C to 150 C Operating Junction Temperature 150 C Power Dissipation Notes 2 amp 3 Total Dissipation at PN MPS FTSO 25 C Ambient Temperature 0 625 W 0 350 W 25 C Case Temperature 1 0 W Voltages amp Currents 3639 3640 Vceo Collector to Emitter Voltage 6 V 12V Note 4 Vceo Collector to Base Voltage 6 V 12 V Veso Emitter to Base Voltage 4 0 V 4 0 V lc Collector Current 80 mA 80 mA ELECTRICAL CHARACTERISTICS 25 C Ambient Temperature unless otherwise noted Note 6 PN3639 PN3640 SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown 6 0 12 0 V lc 100 pA Vse O
7. L CHARACTERISTICS 25 C Ambient Temperature unless otherwise noted Note 6 PN3639 PN3640 SYMBOL CHARACTERISTIC MIN MAX MIN MAX S TEST CONDITIONS VcEotues Collector to Emitter Sustaining 6 0 lc 10 mA Il 0 Voltage Note 5 VcEisan Collector to Emitter Saturation Voltage Note 4 lc 10 mA lg 1 0 mA ic 50 mA ls 5 0 mA lc 10 mA Ip 0 5 mA lc 10 mA lg 1 0 mA Ta 65 C VaEtsat Base to Emitter Saturation 0 75 0 95 0 75 0 95 lc 10 mA ls 0 5 mA Voltage Note 5 0 8 2 0 8 a A V lc 10 mA ls 1 0 mA V lc 50 mA lg 5 0 mA Cob Output Capacitance Vcs 5 0 V le 0 f 2 140 kHz a Vcs 0 lg 0 f 140 kHz a ss es pF We 05V b 01 140Rz hte lo 10 mA Vcg 0 f 100 MHz lc 10 mA Voce 5 0 V f 100 MHz lc 10 mA lg 1g2 10 mA Vec 3 0 V lon Turn On Time lc 50 mA le 5 0 mA test circuit no 235 Vec 6 0 V test circuit no 219 lc 10 mA ls 0 5 mA Veco 1 5 V toti Turn Off Time lc 50 mA ls1 Ip2 cz 5 0 mA test circuit no 235 Vcc 6 0 V test circuit no 219 lc 10 mA lai lez 0 5 mA Vee 1 5 V MPS3639 MPS3640 SYMBOL CHARACTERISTIC MIN MAX MIN MAX TS TEST CONDITIONS BVces Collector to Emitter Breakdown 6 0 12 0 lc 100 uA Vee O Voltage BVceo Collector to Base Breakdown 6 0 12 0 lc 100 pA le 0 Voltage BVeso Emitter to Base Breakdown 4 0 le 100 uA lc
8. akdown V Voltage Collector to Base Breakdown lc Voltage moe B Vces BVcso BVeso Emitter to Base Breakdown Voltage NOTES lc 10 mA ls O lc 10 pA Vee O 10 pA le 0 1 These ratings are limiting values above which the serviceability of any Individual semiconductor device may be impaired 2 These are steady state limits The factory should be consulted on applications involving pulsed or low duty cycle operations 3 These ratings give a maximum junction temperature of 150 C and TO 92 junction to case thermal resistance of 125 C W derating factor of 8 0 mW C junction to ambient thermal resistance of 200 C W derating factor of 5 0 mW C TO 236 junction to ambient thermal resistance of 357 C W derating factor of 2 8 mW C gt 5 Pulse conditions length 300 us duty cycle 1 6 For product family characteristic curves refer to Curve Set T145 Package mounted on 99 5 alumina 8 mm x 8 mm x 0 6 mm Rating refers to a high current point where collector to emitter voltage is lowest 3 147 FAIRCHILD SEMICONDUCTOR J3969674 0027424 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 27428 ENA D ma PN3641 FTSO3641 PN3642 FTSO3642 T 24 23 PN3643 FTS03643 ELECTRICAL CHARACTERISTICS 25 C Ambient Temperature unless otherwise noted Note 6 3641 3642 n SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS TEST CONDITIONS _ 50 1 0 Ices Collector Cutoff Current Note 5
9. nt 35 35 nA Vce 15 V Vee 0 2 0 2 0 pA Vcg 15 V Vee 0 Ta 65 C NOTES 1 These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired 2 These are steady state limits The factory should be consuited on applications involving pulsed or low duty cycle operations 3 These ratings give a maximum junction temperature of 150 C and TO 92 junction to case thermal resistance of 125 C W derating factor of 80 mW C junction to ambient thermal resistance of 200 C W derating factor of 5 0 mW C TO 236 junction to ambient thermal resistance of 357 C W derating factor of 2 8 mW C 4 Rating refers to a high current point where collector to emitter voltage Is lowest 5 Pulse conditions length 300 us duty cycle 1 6 For product family characteristic curves refer to Curve Set T212 Package mounted on 99 5 alumina 8 mm x 8 mm x 0 6 mm Be mter eS v FAIRCHILD SEMICONDUCTOR a4 DE 3969674 0027923 5 ff 3469674 FAIRCHILD SEMICONDUCTOR 84D 27423 D PN MPS FTSO3638 PN MPS FTSO3638A T 32 157 w ELECTRICAL CHARACTERISTICS 25 C Ambient Temperature unless otherwise noted Note 6 3638 3638A SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS TEST CONDITIONS hee DC Pulse Current Gain Note 5 MPS3638 lc 10 mA Vee 10 V 100 lc 10 mA Vee 10 V 80 lc 1 0 MA Vce 10 V 100 lc 50 mA Vee
10. o 235 test circuit no 219 pY 3 146 HFAIRCHILD SEMICONDUCTOR 3469674 FA IRCHILD SEMICONDUCTOR FAI IRCH ILD A Schlumberger SFE T 13969674 0027427 e 84D 27427 D PN3641 FTSO3641 T 7 PN3642 FTSO3642 PN3643 FTSO3643 NPN General Purpose Small Signal o Vceo 45 V Min PN FTSO3642 PN FTS03643 Po 400 mW RF Power Out at 30 MHz fi 250 MHz Min PN3643 ton 60 ns Max 300 mA tor Complements MPS3638 A PN3644 o009 9 ABSOLUTE MAXIMUM RATINGS Note 1 Temperatures Storage Temperature Operating Junction Temperature 55 C to 150 C 450 C Power Dissipation Notes 2 amp 3 Total Dissipation at PN 25 C Ambient Temperature 0 625 W 25 C Case Temperature 1 0 W Voltages amp Currents 3641 3 Vceo Collector to Emitter Voltage 30 V Note 4 Vceo Collector to Base Voltage 60 V Vego Emitter to Base Voltage 5 0 V lc Collector Current 500 mA 30 V Min PN FTSO3641 PN FTSO3643 fre 100 Min 150 mA 25 Min 500 mA 150 ns Max 300 mA Amplifiers PACKAGE PN3641 TO 92 PN3642 TO 92 PN3643 TO 92 FTSO3641 TO 236AA AB FTSO3642 TO 236AA AB FTSO3643 TO 236AA AB FTSO 0 350 W 3642 45 V 60 V 5 0V 500 mA ELECTRICAL CHARACTERISTICS 25 C Ambient Temperature unless otherwise noted Note 6 SYMBOL CHARACTERISTIC BVceorsus Collector to Emitter Breakdown 45 Voltage Notes 4 amp 5 Collector to Emitter Bre
11. o Emitter Saturation lc 150 mA la 15 mA Voltage Note 5 3 148 23469674 00274279 b FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 84D 27429 D PN3641 FTSO23641 PN3642 FTSO3642 T 249 43 PN3643 FTSO3643 ELECTRICAL CHARACTERISTICS 25 C Ambient Temperature unless otherwise noted Note 6 7 3643 SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS Cob Output Capacitance Jao pF Vcs 10V le 0 f 140 kHz hie Magnitude of Common Emitter lc 50 mA Vce 5 0 V Short Circuit Small Signal f 100 MHz i Current Gain Gre Amplifier Power Gain dB Zero Signal Vce 15 V test circuit no 238 lc 0 Re 140 0 Ru 260 N f 30 MHz Pin 40 mW Collector Efficiency Zero Signal Vce 15 V 7 test circuit no 238 lc 0 Ra 140 0 Ri 260 0 f 30 MHz Pin 40 mW ton Turn On Time lc 300 mA lg1 30 mA test circuit no 241 tofi Turn Off Time ns lc 300 mA Isi Ino 30 MA test circuit no 242 3 149

FAIRCHILD PN/MPS/FTSO3638 PN/MPS/FTSO3638A handbook

Contents

Download Pdf Manuals

Related Search

Related Contents