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International Rectifier IR2128 handbook

1. INTEGRATED CIRCUIT DESIGNERS MANUAL International IOR Rectifier IR2128 Dynamic Electrical Characteristics Veias Vcc VBs 15V CL 1000 pF andT 25 C unless otherwise specified The dynamic electrical characteristics are measured using the test circuit shown in Figure 3 Parameter Definition in Test Conditions Turn On Propagation Delay Vs 0V Turn Off Propagation Delay Vs 600V Turn On Rise Time C 1000 pF Turn Off Fall Time C 1000 pF Start Up Blanking Time CS Shutdown Propagation Delay CS to FAULT Pull Up Propagation Delay Static Electrical Characteristics VBIAS Vcc VBS 15V and Ta 25 C unless otherwise specified The Vin VTH and lin parameters are referenced to COM The Vo and Io parameters are referenced to Vs Parameter Definition in i Test Conditions Logic 0 Input Voltage OUT LO Vec 10V to 20V Logic 1 Input Voltage OUT HI Voc 10V to 20V CS Input Positive Going Threshold Voc 10V to 20V High Level Output Voltage Vgias VO lO 0A Low Level Output Voltage VO IO 0A Offset Supply Leakage Current Vs Vs 600V Quiescent Vgs Supply Current Vin OV or 5V Quiescent Vcc Supply Current Vin OV or 5V Logic 1 Input Bias Current Vin OV Logic 0 Input Bias Current Vin 9V High CS Bias Current i Vcs 3V High CS Bias Curre
2. Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur All voltage param eters are absolute voltages referenced to COM The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions Parameter Definition High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage FAULT Output Voltage Current Sense Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation Ta lt 25 C 8 Lead DIP 8 Lead SOIC Thermal Resistance Junction to Ambient 8 Lead DIP 8 Lead SOIC Junction Temperature Storage Temperature Lead Temperature Soldering 10 seconds Recommended Operating Conditions The Input Output logic timing diagram is shown in Figure 1 For proper operation the device should be used within the recommended conditions The Vs offset rating is tested with all supplies biased at 15V differential Parameter Definition High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage FAULT Output Voltage Current Sense Signal Voltage Ambient Temperature Note 1 Logic operational for Vs of 5 to 600V Logic state held for Vs of 5V to VBs B 130 CONTROL
3. UO es U L International TER Rectifier Data Sheet No PD 6 042D IR2128 CURRENT SENSING SINGLE CHANNEL DRIVER Features E Floating channel designed for bootstrap operation Fully operational to 600V Tolerant to negative transient voltage dV dt immune E Gate drive supply range from 10 to 20V E Undervoltage lockout E 5V Schmitt triggered input logic m FAULT lead indicates shutdown has occured E Output out of phase with input Description The IR2128 is a high voltage high speed power MOSFET and IGBT driver Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction The logic input is compatible with standard CMOS or LSTTL outputs The protection circuity detects over current in the driven power transistor and terminates the gate drive voltage An open drain FAULT signal is pro vided to indicate that an over current shutdown has occurred The output driver features a high pulse current buffer stage designed for minimum cross conduction The floating channel can be used to drive an N channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts Typical Connection Product Summary 600V max 200 mA 420 mA 10 20V 250 mV 150 amp 100 ns VOFFSET lo VOUT VCSth ton off typ Packages CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B 129 International IR2128 IOR Rectifier Absolute
4. nt Vcs OV Vgs Supply Undervoltage Positive Going Threshold Vgs Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Vo OV Vin OV PW lt 10 us Output Low Short Circuit Pulsed Current Vo 15V Vin 5V PW lt 10 us CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B 131 International IR2128 IOR Rectifier Functional Block Diagram Vec hg DETECT 5V HV R g ULSE BUFFER HO LTER S LEVEL UP P R SHIFTERS SHEL FI IN lt 7 4 PULSE _ V v GEN m F DELAY 4 PULSE 4 GEN Q R 4 RS DOWN S i SHIFTER PULSE al gt Q R FILTER Description Logic and gate drive supply Logic input for gate driver output HO out of phase with HO Indicates over current shutdown has occurred negative logic Logic ground High side floating supply High side gate drive output High side floating supply return Current sense input to current sense comparator B 132 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL International ISR Rectifier IR2128 Device Information Process amp Design Rule HVDCMOS 4 0 um Transistor Coun
5. t 206 Die Size Die Outline 77 X 85 X 26 mil Thickness of Gate Oxide Connections First Layer Material Poly Silicon Width 4 um Spacing 6 um Thickness 5000 Second Layer Material Width Al Si Si 1 0 0 1 6 um Spacing 7 um Thickness 20 000A Contact Hole Dimension 8 um X 8 um Insulation Layer Passivation Material PSG SiO2 Thickness Material 1 5 um PSG SiOz Thickness 1 5 um Method of Saw Full Cut Method of Die Bond Ablebond 84 1 Wire Bond Leadframe Method Thermo Sonic Material Material Au 1 0 mil 1 3 mil Cu Die Area Ag Lead Plating Pb Sn 37 63 Package Types 8 Lead PDIP SO 8 Materials EME6300 MP150 MP190 Remarks CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B 133 International IR2128 IOR Rectifier Figure 1 Input Output Timing Diagram Figure 2 Switching Time Waveform Definition IN 50 to CS VcsTH 90 cs HO tes HO 90 FAULT Figure3 Start up Blanking Time Waveform Definitions Figure 4 CS Shutdown Waveform Definitions Figure 5 CS to FAULT Waveform Definitions B 134 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL

International Rectifier IR2128 handbook

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