FAIRCHILD BC807/BC808 Manual
Contents
1. 47 SuperSOT 3 CoolFET FASTr MicroFET PowerTrench SuperSOT 6 CROSSVOLT FRFET MicroPak QFET SuperSOT 8 DOME GlobalOptoisolator MICROWIRE Qs SyncFET EcoSPARK GTO MSX QT Optoelectronics TinyLogic E CMOS HiSeCTM MSXPro Quiet Series TruTranslation EnSigna 2CTM OCX RapidConfigure UHC Across the board Around the world OCXPro RapidConnect UltraFET The Power Franchise OPTOLOGIC SILENT SWITCHER VCX Programmable Active Droop OPTOPLANAR SMART START DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems 2 A critical component is any component of a life support which a are intended for surgical implant into the body device or system whose failure to perform can be or b support or sustain life or c whose failure to perform reasonably expected to caus2. O BC80718 O au L FAIRCHILD SEMICONDUCTOR BC807 BC808 Switching and Amplifier Applications Suitable for AF Driver stages and low power output stages Complement to BC817 BC818 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T 25 C unless otherwise noted 7 SOT 23 1 Base 2 Emitter 3 Collector Symbol Parameter Value Units Voces Collector Emitter Voltage BC807 50 V BC808 30 V VcEo Collector Emitter Voltage BC807 45 V BC808 25 V VEBO Emitter Base Voltage 5 V lc Collector Current DC 800 mA Pc Collector Power Dissipation 310 mW Tj Junction Temperature 150 C TSTG Storage Temperature 65 gt 150 C Electrical Characteristics 1 25 c unless otherwise noted Symbol Parameter Test Condition Min Typ Max Units BVcEO Collector Emitter Breakdown Voltage Ic 10mA Ip 0 BC807 45 V BC808 25 V BVces Collector Emitter Breakdown Voltage Ic 0 1mA Vge 0 BC807 50 V BC808 30 V BVeBo Emitter Base Breakdown Voltage le 0 1mA Ic 0 5 V Ices Collector Cut off Current Vcg 25V Vae 0 100 nA lEBo Emitter Cut off Current Vep 4V Ic 0 100 nA hre4 DC Current Gain Vce 1V Ic 100mA 100 630 Nee Vce 1V lc 300mA 60 Voce sat Collector Emitter Saturation Voltage lc 500mA lg 50mA 0 7 V VBE on Base Emitter On Voltage Vcg 1V Ic 300mA 1 2 V fr Current Gain Bandwi
3. dth Product Vcg 5V lg 10mA 100 MHz f 50MHz Cob Output Capacitance Vcg 10V f 1MHz 12 pF 2002 Fairchild Semiconductor Corporation Rev A2 August 2002 80899 210899 hfe Classification Classification 16 25 40 hee 100 250 160 400 250 630 hFE2 60 100 170 Marking Code Type 807 16 807 25 807 40 808 16 808 25 808 40 Marking 9FA 9FB 9FC 9GA 9GB 9GC 2002 Fairchild Semiconductor Corporation Rev A2 August 2002 80899 210894 Typical Characteristics E Z W tc tc 2 o tc O E o Ww Q o E Vor V COLLECTOR EMITTER VOLTAGE Figure 1 Static Characteristic 1000 PULSE z Oo 100 ud Zz LL tc tc 2 o o 10 a E 1 0 1 1 10 100 1000 I mA COLLECTOR CURRENT Figure 3 DC current Gain 1000 Vor 1V 5 PULSE W a 100 a 2 o cc o 5 10 LL l o o T A E 0 1 0 4 0 5 0 6 0 7 0 8 Vee V BASE EMITTER VOLTAGE Figure 5 Base Emitter On Voltage Vee sat Voe sat V SATURATION VOLTAGE Ci Co pF CAPACITANCE 20 P Ve 499 v z 16 od GN wW e7 609 id IN my T eov v o iJ oc 12 N MV p MT in A 2 30 8 e 8 yo 209 X e E EL Ex I 108A 1 0 0 10 20 30 40 50 Vog V COLLECTOR EMITTER VOLTAGE Figure 2 Static Characteris
4. e the failure of the life support when properly used in accordance with instructions for use device or system or to affect its safety or effectiveness provided in the labeling can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or In This datasheet contains the design specifications for Design product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only 2002 Fairchild Semiconductor Corporation Rev 11
5. tic 0 1 1 10 100 1000 Ic mA COLLECTOR CURRENT Figure 4 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage 100 f 1 0MHz 10 0 1 1 10 Vce V COLLECTOR BASE VOLTAGE Vee V EMITTER BASE VOLTAGE Figure 6 Input Output Capacitance 2002 Fairchild Semiconductor Corporation Rev A2 August 2002 80894 2 0894 Typical Characteristics Continued 1000 Vor 5 0V 100 fi MHz GAIN BANDWIDTH PRODUCT 1 10 Ic mA COLLECTOR CURRENT Figure 7 Current Gain Bandwidth Product 2002 Fairchild Semiconductor Corporation Rev A2 August 2002 80899 210899 Package Dimensions 0 40 0 03 2 90 0 10 FEN SOT 23 0 45 0 60 0 40 0 03 0 95 0 08 0 95 0 03 1 90 0 03 0 97REF 0 508REF rm z 2 o N o PIE 9 o H 019 010 N 0 38 REF 04235 0 96 1 14 Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation Rev A2 August 2002 80894 2 0894 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACExTM FACTTM ImpliedDisconnect PACMAN SPM ActiveArray FACT Quiet series ISOPLANAR POP Stealth Bottomless FAST LittleFET Power2
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FAIRCHILD BC807/BC808 Manual