Central CMPTH10 NPN SILICON RF TRANSISTOR handbook
Contents
1. LEAD CODE 1 BASE 2 EMITTER 3 COLLECTOR 2092. Central CMPTH10 Semiconductor Corp NPN SILICON RF TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process epoxy molded in a surface mount package designed for low noise UHF VHF amplifier and high output oscillator applications Marking code is C3E SOT 23 CASE MAXIMUM RATINGS TA 259C SYMBOL UNITS Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 0 V Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ stg 65 to 150 oc Thermal Resistance OJA 357 C W ELECTRICAL CHARACTERISTICS TA 259C unless otherwise noted SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO Vcp 25V 100 nA IEBO VEp 2 0V 100 nA BVcBO Ic 100uA 30 V BVcEO Ic 1 0mA 25 V BVEBO Ig 104A 3 0 V VCE SAT Ic 4 0mA Ip 0 4mA 0 50 V VBE ON VcE 10V Ip 4 0mA 0 95 V hFE VcE 10V Ic 4 0mA 60 fT VcE 10V Ic 4 0mA f 100MHz 650 MHz Ceb VcB 10V lg 0 f 1 0MHz 0 70 pF Crp Vcpg 10V lg 0 f21 0MHz 0 65 pF rb Cc VcB 10V Ic 4 0mA f231 8MHz 9 0 ps 208 All dimensions in inches mm 110 2 80 Ri 118 3 00 R 003 0 08 083 2 10 006 0 15 041 1 05 NOMINAL NOMINAL 106 2 70 j 047 1 19 c MAXIMUM 063 1 60 1 005 0 13 3 MAXIMUM l 014 0 35 037 0 94 020 0 50 EM 050 1 28
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Central CMPTH10 NPN SILICON RF TRANSISTOR handbook