SIEMENS BFT 92W handbook
Contents
1. Power Gain Gma Gms Vce Intermodulation Intercept Point P3 f c So4 H Vog 3rd order Output Zg Z 50Q f Parameter Vce Parameter f 900MHz 16 35 p 15mA 0 9GHz dBm IP 0 9GHz i SY f 25 3V 2V 20 1 8GHz 1V 1 8GHz 1 gt 10 5 0 V 12 0 5 10 15 20 mA 30 Voe e Power Gain Gma Gms ff Power Gain S21 2 f A Voge Parameter Vce Parameter 35 30 I 15mA 15mA dB dB G Sz j 25 f 20 20 15 15 10 10 5 10V 10V 5 2V 2V 0 1V 1V 0 7V 0 0 7V 5 00 05 10 15 20 25 GHz 35 00 05 10 15 20 25 GHz 35 Semiconductor Group 7 Dec 11 19962. Permissible Pulse Load Fins f tp Permissible Pulse Load Piotmax Ptotbc f fp 108 102 Rrus K W Protmax Protp D 0 0 005 0 1 0 02 di 0 05 102 S i 101 0 1 MS 0 2 0 8 e 0 5 0 1 0 05 H 0 02 HW nr0 01 0005 D 0 107 7 6 5 4 3 2 1 0 109 7 6 5 4 3 2 1 0 107 10 10 107 107 107 10 s 10 107 10 10 107 107 107 10 s 10 h Semiconductor Group 5 Dec 11 1996 SIEMENS B Collector base capacitance Cop f VcB Transition frequency fr f lc VBE Vbe 0 f 1MHz Voge Parameter 12 6 0 E es 10V Co 1 4 f 50 ey 4 5 5V 4 0 1 0 0 8 3 0 ov 0 6 2 5 1V 0 4 S 0 7V 0 2 dg 0 0 1 0 0 2 4 6 8 10 12 14 16 V 20 0 5 10 15 20 mA 30 Vp Io Power Gain Gma Gms flo Power Gain Gma Gms A c f 0 9GHz f 1 8GHz Voge Parameter Voce Parameter 16 10 0 dB dB 10V 10V 14 0 e og j 18 5V f 7 0 3V 12 3V 6 0 2V 11 x 5 0 10 4 0 1V r 3 0 2 0 7 0 7V 6 0 7V 1 0 5 0 0 0 5 10 15 20 mA 30 0 5 10 15 20 mA 30 be be Semiconductor Group 6 Dec 11 1996 SIEMENS BEL
3. 2 Dec 11 1996 SIEMENS BFT 92W Electrical Characteristics at T 25 C unless otherwise specified Parameter Symbol Values Unit min typ Max AC Characteristics Transition frequency Ic 15 mA Vce 8 V f 500 MHz T 3 5 GHz Collector base capacitance Vop 10 V f 1 MHz 0 58 0 9 pF Collector emitter capacitance Vce 10 V f 1 MHz 0 3 Emitter base capacitance VEB 0 5 V f 1 MHz 0 77 Noise figure Ic 2 mA VcE 8 V Zs Zsopt f 900 MHz f 1 8 GHz dB Power gain 2 lc 15 MA Vor 8 V Zs Zsopt ZL lt Z opt f 900 MHz f 1 8 GHz Gma 14 8 5 Transducer gain Ic 15 mA Vce 8 V Zs 4 50 Q f 900 MHz f 1 8 GHz IS21el 11 5 2 Gma 1S21 S12 k k2 1 12 Semiconductor Group Dec 11 1996 SIEMENS EFSER SPICE Parameters Gummel Poon Model Berkeley SPICE 2G 6 Syntax Transistor Chip Data IS 4 5354 fA BF 98 533 S NF 0 90551 VAF 10 983 V IKF 0 016123 A ISE 12 196 fA NE 1 1172 S BR 10 297 NR 1 2703 VAR 47 577 V IKR 0 019729 A ISC 0 024709 fA NC 1 206 S RB 7 9562 Q IRB 0 79584 mA RBM 1 5939 Q RE 1 5119 Q RC 0 66749 Q CJE 1 7785 fF VJE 0 79082 V MJE 0 32167 TF 32 171 ps XTF 0 30227 VTF 0 21451 V ITF 0 013277 mA PTF 0 deg CJC 922 07 fF VJC 1 2 V MJC 0 3 XCJ
4. C 0 3 S TR lt 2 0779 ns CJS 0 fF VJS 0 75 V MJS 0 XTB 0 EG 1 11 eV XII 3 FC 0 75167 TNOM 300 K All parameters are ready to use no scalling is necessary Extracted on behalf of SIEMENS Small Signal Semiconductors by Institut f r Mobil und Satellitenfunktechnik IMST 1996 SIEMENS AG Package Equivalent Circuit LBI 0 57 nH Lo LBO 0 4 nH LEI DA nH o Jeck ALA i Ip LCO 0 41 nH T H Ta CBE e fF CCB 101 fF CCE 175 fF i EHA07222 Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD ROM or see Internet http www siemens de Semiconductor products 35 35 htm Semiconductor Group 4 Dec 11 1996 SIEMENS BEL aa Total power dissipation Pot f TA Ts Package mounted on epoxy 300 mW 0 20 40 60 80 100 120 C 150 Trl
5. U U BFT 92WII OO SIEMENS BFT 92W PNP Silicon RF Transistor e For broadband amplifiers up to 2GHz at collector currents up to 20mA e Complementary type BFR 92W NPN VS005561 ESD Electrostatic discharge sensitive device observe handling precaution Type Marking Ordering Code Pin Configuration Package BET OOW Wis Q62702 F1681 1 B 2 E 3 C SOT 323 Maximum Ratings Parameter Symbol Values Unit Collector emitter voltage VcEO 15 V Collector base voltage VoBo 20 Emitter base voltage VERO 2 Collector current Ic 25 mA Base current R 3 Total power dissipation Prot mW Tg lt 105 C 200 Junction temperature T 150 C Ambient temperature TA 65 150 Storage temperature Tstg 65 150 Thermal Resistance Junction soldering point 1 Rings lt 225 K W 1 Ts is measured on the collector lead at the soldering point to the pcb Semiconductor Group 1 Dec 11 1996 SIEMENS BETSAN Electrical Characteristics at T 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC Characteristics Collector emitter breakdown voltage ViBR CEO V Ig 1mMA Ip 0 15 z Collector base cutoff current lcBo nA Vcg 10 V le 0 100 Emitter base cutoff current lEBO uA Vep 2V c 0 10 DC current gain hfg lc 15 mA Weg 8 V 15 50 Semiconductor Group
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