PHILIPS BCV64B handbook
Contents
1. Re Re 1e R1 o 4 2 V ree s re 3e Ra 3 77 b 77 Vi MGD828 77 Fig 2 Schmitt trigger application 1999 May 21 4 Product specification BCV64B Philips Semiconductors Product specification PNP general purpose double transistor BCV64B PACKAGE OUTLINE Plastic surface mounted package 4 leads SOT143B detail X 0 1 Ennn scale DIMENSIONS mm are the original dimensions UNIT A mm OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT143B Ed 97 02 28 1999 May 21 5 Philips Semiconductors Product specification PNP general purpose double transistor BCV64B DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings o2. South Africa S A PHILIPS Pty Ltd 195 215 Main Road Martindale 2092 JOHANNESBURG P O Box 58088 Newville 2114 Tel 27 11 471 5401 Fax 27 11 471 5398 South America Al Vicente Pinzon 173 6th floor 04547 130 SAO PAULO SP Brazil Tel 55 11 821 2333 Fax 55 11 821 2382 Spain Balmes 22 08007 BARCELONA Tel 34 93 301 6312 Fax 34 93 301 4107 Sweden Kottbygatan 7 Akalla S 16485 STOCKHOLM Tel 46 8 5985 2000 Fax 46 8 5985 2745 Switzerland Allmendstrasse 140 CH 8027 Z RICH Tel 41 1 488 2741 Fax 41 1 488 3263 Taiwan Philips Semiconductors 6F No 96 Chien Kuo N Rd Sec 1 TAIPEI Taiwan Tel 886 2 2134 2886 Fax 886 2 2134 2874 Thailand PHILIPS ELECTRONICS THAILAND Ltd 209 2 Sanpavuth Bangna Road Prakanong BANGKOK 10260 Tel 66 2 745 4090 Fax 66 2 398 0793 Turkey Yukari Dudullu Org San Blg 2 Cad Nr 28 81260 Umraniye ISTANBUL Tel 90 216 522 1500 Fax 90 216 522 1813 Ukraine PHILIPS UKRAINE 4 Patrice Lumumba str Building B Floor 7 252042 KIEV Tel 380 44 264 2776 Fax 380 44 268 0461 United Kingdom Philips Semiconductors Ltd 276 Bath Road Hayes MIDDLESEX UB3 5BX Tel 44 181 730 5000 Fax 44 181 754 8421 United States 811 East Arques Avenue SUNNYVALE CA 94088 3409 Tel 1 800 234 7381 Fax 1 800 943 0087 Uruguay see South America Vietnam see Singapore Yugoslavia PHILIPS Trg N Pasica 5 v 11000 BEOGRAD Tel 381 11 62 5344 Fax
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4. 381 11 63 5777 Internet http www semiconductors philips com SCA65 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 115002 00 03 pp8 Philips Semiconductors Date of release 1999 May 21 Document order number 9397 750 05831 Lef make things better S PHILIPS
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6. ETER CONDITIONS VALUE UNIT Rin ja thermal resistance from junction to ambient note 1 500 K W Note 1 Transistor mounted on a printed circuit board CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER IcBo collector cut off current hee DC current gain TR1 TR2 CONDITIONS le 0 Vos 30 V MIN MAX UNIT le 0 Vcg 30 V Tj 150 C Ic 2 mA Voce 5V le 2 mA Vce 700 mV note 1 Ic 10 mA IB 0 5 mA VcEsat collector emitter saturation voltage collector emitter saturation voltage TRI TR2 VBEsat base emitter saturation voltage Ic 100 mA IB 5 mA Ice 10 mA IB 0 5 mA note 2 base emitter saturation voltage TR1 Ic 100 mA Ig 5 mA note 2 base emitter voltage TR1 TR1 TR2 Ge collector capacitance transition frequency TRI Notes lc 2 MA Voe 5 V note 3 lc 10 mA Vce 5 V note 3 Ic 2 MA Vce 700 mV note 3 le ie 0 Vcg 10 V f 1 MHz Ic 10 mA Voe 5 V f 100 MHz 1 Group selection will be done on TR1 Due to matched dies hre values for TR2 are the same as for TR1 2 VpEsa decreases by approximately 1 7 mV K with increasing temperature 3 Ve decreases by approximately 2 mV K with increasing temperature 1999 May 21 Philips Semiconductors PNP general purpose double transistor APPLICATION INFORMATION
7. OO Beveg OO DISCRETE SEMICONDUCTORS DATA SHEET BCV64B PNP general purpose double transistor Product specification 1999 May 21 Supersedes data of 1997 Mar 10 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification PNP general purpose double transistor BCV64B FEATURES PINNING e Low current max 100 mA DESCRIPTION PIN 1 collector TR2 and base TR1 3 emitter TR1 and TR2 e Low voltage max 30 and 6 V APPLICATIONS e General purpose switching and amplification e For use in Schmitt trigger applications DESCRIPTION 4 3 2 1 PNP double transistor in a SOT143B plastic package NPN complement BCV63B F MARKING TYPE NUMBER MARKING CODE f i 3 4 BCV64B C96 Top view MAM291 Fig 1 Simplified outline SOT143B and symbol LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS VcBo collector base voltage open emitter TR1 collector emitter voltage open base emitter base voltage open collector collector current DC peak collector current base current DC total power dissipation junction temperature operating ambient temperature Note 1 Transistor mounted on a printed circuit board 1999 May 21 2 Philips Semiconductors Product specification PNP general purpose double transistor BCV64B THERMAL CHARACTERISTICS SYMBOL PARAM
8. nly and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1999 May 21 6 Philips Semiconductors Product specification PNP general purpose double transistor BCV64B NOTES 1999 May 21 7 Philips Semiconductors Argentina see South America Australia 34 Waterloo Road NORTH RYDE NSW 2113 Tel 61 2 9805 4455 Fax 61 2 9805 4466 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 1 60 101 1248 Fax 43 1 60 101 1210 Belarus Hotel Minsk Business Center Bld 3 r 1211 Volodarski Str 6 220050 MINSK Tel 375 172 20 0733 Fax 375 172 20 0773 Belgium see The Netherlands Brazil see South America Bulgaria Philips Bulgaria Ltd Energoproject 15th floor 51 James Bourchier Blvd 1407 SOFIA Tel 359 2
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PHILIPS BCV64B handbook