Infineon BCV62 handbook
Contents
1. 10 107 s A0 Jul 11 20012. ff current Vop 30 V 0 15 n Collector cutoff current Vop 30 V k 0 Ta 150 C DC current gain 1 k 0 1 mA VE 5V DC current gain 1 k 2 mA VE 5V BCV62A BCV62B BCV62C Collector emitter saturation voltage lk 10 mA B 0 5 mA k 100 mA Ig 5 mA Base emitter saturation voltage 1 lk 10 mA B 0 5 mA k 100 mA lg 5 mA Base emitter voltage 1 k 2 mA VE 5V k 10 mA KE 5 V 1 Pulse test t lt 300us D 2 220 420 wech CO CH 290 mV Jul 11 2001 o Infineon technologies PUNGE Electrical Characteristics at 7 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC Characteristics Base emitter forward voltage V le 10 pA lg 250 mA 1 8 Matching of transistor T1 and transistor T2 Io1 k2 at eo 0 5mA and Vog 5V Ta 25 C 0 7 1 3 Ta 150 C 0 7 1 3 Thermal coupling of transistor T1 and leo 5 MA transistor T2 1 T1 Ver 5V Maximum current of thermal stability of oy AC characteristics of transistor T1 Transition frequency fr 250 MHz k 10 mA VE 5 V f 100 MHz Collector base capacitance Cob 3 pF Vcg 10 V f 1 MHz Emitter base capacitance Ceb 8 Veg 0 5 V f 1 MHz Noise figure F 2 dB Io 200 PA Veg 5 V Ag 2 kQ f 1 kHz Af 200 Hz Short circuit input impedance Nite 4 5 3 kQ k 1 mA Veg 10 V f 1 kHz Open circuit rever
3. oo Bcvex oo 00 Beven 10 Infineon technologies BCV62 PNP Silicon Double Transistor e To be used as a current mirror e Good thermal coupling and VRE matching e High current gain e Low collector emitter saturation voltage C1 2 C2 1 VPS05178 E1 3 E2 4 Type Marking Pin Configuration Package BCV62A 3Js 1 C2 2 C1 3 E1 4 E2 SOT143 BCV62B 3Ks 1 C2 2 C1 3 E1 4 E2 SOT143 BCV62C 3Ls 1 C2 2 C1 3 E1 4 E2 SOT143 Maximum Ratings Parameter Symbol Value Unit Collector emitter voltage VcEo 30 V transistor T1 Collector base voltage open emitter Wope 30 transistor T1 Emitter base voltage VEBs 6 DC collector current Io 100 mA Peak collector current om 200 Base peak current transistor T1 ku 200 Total power dissipation Ts 99 C Prot 300 mW Junction temperature Tj 150 C Storage temperature T tq 65 150 Thermal Resistance Junction soldering point Rings lt 170 K W 1For calculation of Ringa please refer to Application Note Thermal Resistance 1 Jul 11 2001 o Infineon technologies Electrical Characteristics at T 25 C unless otherwise specified Parameter Symbol Values BCV62 Unit min typ max DC Characteristics of T1 Collector emitter breakdown voltage k 10 mA Ip 0 lt Collector base breakdown voltage k 10 pA Ip 0 Emitter base breakdown voltage le 10 PA KG 0 Collector cuto
4. se voltage transf ratio Du ze 2 10 4 k 1 mA Vce 10 V f 1 kHz Short circuit forward current transf ratio Mie 100 900 lo 1 mA VE 10 V f 1 kHz Open circuit output admittance hove S 30 uS lo 1 mA Veg 10 V f 1 kHz 1 Witout emitter resistor Device mounted on alumina 15mm x 16 5mm x 0 7mm 3 Jul 11 2001 BCV62 technologies Test circuit for current matching loi Www Ti T2 O lez constant 3 4 i U Veo Voo Ems Note Voltage drop at contacts Vo lt 2 3 Vr 16mV Characteristic for determination of Voge at specified RE range with 2 as parameter under condition of li 1 2 1 3 Te Ne O Je constant 4 fo re In Note BCV62 with emitter resistors EHN00004 4 Jul 11 2001 Infineon technologies Total power dissipation Rot f 7s 350 250 50 9 _ gt 15 30 45 60 75 90 105 120 C Ts 150 BCV62 Permissible pulse load Protmax Protbc f tp 3 BCV 62 EHP00941 10 P totmax 5 Pot DC
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Infineon BCV62 handbook