Infineon BCV61 handbook
Contents
1. 10 103 104 10 10 s 107 5 Jul 10 20012. cutoff current Vop 30 V E 0 15 n Collector cutoff current Vop 30 V E 0 Ta 150 C DC current gain 1 k 0 1 mA Vog 5 V DC current gain 1 Ic 2 mA Vce 5 V BCV61A BCV61B BCV61C Collector emitter saturation voltage1 Ic 10 mA Ip 0 5 mA c 100 mA Ig 5 mA Base emitter saturation voltage 1 c 10 mA Ip 0 5 mA c 100 mA lg 5 mA Base emitter voltage 1 c 2 mA Vce 5 V c 10 mA Vog 5 V 1 Pulse test t lt 300us D 2 VBE ON 200 420 CO CH 700 900 mV Jul 10 2001 e Infineon technologies Electrical Characteristics at 7 25 C unless otherwise specified BCV61 Parameter Characteristics Symbol min typ max Values Unit Base emitter forward voltage lE 10 uA lg 250 mA Matching of transistor T1 and transistor T2 at lg2 0 5mA and Vor 5V Ta 25 C Ta 150 C 0 7 0 7 1 3 Thermal coupling of transistor T1 and transistor T2 0 T1 Vog 5V Maximum current of thermal stability of k mA AC characteristics for transistor T1 Transition frequency c 10 mA Vog 5 V f 100 MHz 250 MHz Collector base capacitance Vcg 10 V f 1 MHz pF Emitter base capacitance Veg 0 5 V f 1 MHz Noise figure Io 200 pA Veg 5 V Ag 2 kQ f 1 kHz Af 200 Hz Short circuit input impedance c 1 mA Veg 10 V f 1 kHz dB kQ Op
3. 0o Bcva oo 0 0 Beveg D 0 Infineon technologies BCV61 NPN Silicon Double Transistor e To be used as a current mirror e Good thermal coupling and Ver matching e High current gain e Low collector emitter saturation voltage C1 2 C2 1 VPS05178 E1 3 E2 4 Type Marking Pin Configuration Package BCV61A 1Js 1 C2 2 C1 3 E1 4 E2 SOT143 BCV61B 1Ks 1 C2 2 C1 3 E1 4 E2 SOT143 BCV61C 1Ls 1 C2 2 C1 3 E1 4 E2 SOT143 Maximum Ratings Parameter Symbol Value Unit Collector emitter voltage VcEO 30 V transistor T1 Collector base voltage open emitter VcBo 30 transistor T1 Emitter base voltage VEBS 6 DC collector current Io 100 mA Peak collector current lom 200 Base peak current transistor T1 ku 200 Total power dissipation Tg 99 C Prot 300 mW Junction temperature Tj 150 C Storage temperature Tstg 65 150 Thermal Resistance Junction soldering point Rings lt 170 K W 1For calculation of Ringa please refer to Application Note Thermal Resistance 1 Jul 10 2001 ev Infineon technologies Electrical Characteristics at T 25 C unless otherwise specified Parameter Symbol Values BCV61 Unit min typ max DC Characteristics of T1 Collector emitter breakdown voltage c 10 mA Ip 0 lt Collector base breakdown voltage Ic 10 pA Ip 0 Emitter base breakdown voltage lE 10 PA Ilo 0 Collector
4. en circuit reverse voltage transf ratio Ic 1 mA Vce 10 V f 1 kHz 10 4 Short circuit forward current transf ratio c 1 mA Veg 10 V f 1 kHz Open circuit output admittance c 1 mA Veg 10 V f 1 kHz hope 900 30 us 1 Witout emitter resistor Device mounted on alumina 15mm x 16 5mm x 0 7mm Jul 10 2001 BCV61 technologies Test circuit for current matching o Jo Je 9 EHNO0001 Note Voltage drop at contacts Voo lt 2 3 Vy 16mV Characteristic for determination of Me at specified Re range with lg2 as parameter under condition of 4 IE2 1 3 Jo Me EHN00002 Note BCV61 with emitter resistors 4 Jul 10 2001 Total power dissipation Rot ATs Infineon technologies 350 250 50 9 15 30 45 60 75 90 105 120 C Ts 150 BCV61 Permissible pulse load Protmax PiotDC f tp 103 BCV 61 EHP00942 Protmax 5 t to Lg Potne D F M i Lag T 102 LUNA D oS 0 005 5 TIN Tm 0 01 TIM 0 02 TA 0 05 D 0 1 0 2 10 0 5 5 10
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Infineon BCV61 handbook