PHILIPS 1PS70SB40 series handbook
Contents
1. UNIT A D 1 1 mm 08 0 1 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT323 SC 70 Eg 97 02 28 ISSUE DATE 1999 Apr 26 5 Philips Semiconductors Product specification Schottky barrier double diodes 1PS70SB40 series DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using2. Philips Semiconductors Date of release 1999 Apr 26 Document order number 9397 750 05792 Lets make things better S PHILIPS
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6. F HA mA a 1 10 10 f 0 20 63 4 2 1 107 10 1 3 4 102 102 0 0 2 0 4 0 6 0 8 1 0 0 10 20 M pp de Ve V 1 Tamb 150 C 2 Tamb 85 C 1 Tamb 150 C 3 Tamb 25 C 2 Tamb 85 C 4 Tamb 40 C 3 Tamb 25 C Fig 7 Reverse current as a function of reverse voltage typical values Fig 6 Forward current as a function of forward voltage typical values MLC364 MLC363 108 5 Cd diff PF Q 4 102 3 2 10 1 0 10 20 30 40 71 2 10 1 10 mA 10 VR V f 10 KHz f 1 MHZ Tamb 25 C Fig 8 Differential forward resistance as a function Fig 9 Diode capacitance as a function of reverse of forward current typical values voltage typical values 1999 Apr 26 4 Philips Semiconductors Product specification Schottky barrier double diodes 1PS70SB40 series PACKAGE OUTLINE Plastic surface mounted package 3 leads SOT323 1 L detail X 0 1 2mm ese pe se Pee Le pe ah Se E E scale DIMENSIONS mm are the original dimensions A1 max bp 0 4 2 2 0 3 1 8
7. O O 1PS 0SB40 series O O DISCRETE SEMICONDUCTORS DATA SHEET 1PS70SB40 series Schottky barrier double diodes Product specification 1999 Apr 26 Supersedes data of 1997 Oct 28 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification Schottky barrier double diodes 1PS70SB40 series FEATURES e Low forward voltage e Guard ring protected e Very small SMD package e Low diode capacitance APPLICATIONS e Ultra high speed switching e Voltage clamping e Protection circuits e Blocking diodes DESCRIPTION Planar Schottky barrier diodes encapsulated in an SC 70 very small plastic SMD package Single diodes and double diodes with different pinning are available MARKING MARKING TYPE NUMBER CODE 1 1PS70SB40 1PS70SB44 1PS70SB45 1PS70SB46 Note 1 Made in Hong Kong t Made in Malaysia 1999 Apr 26 PINNING 2 3 ky a2 E ai a2 Fig 1 Fig 2 Top view MGD765 Simplified outline SC 70 and pin configuration 3 n c MLC357 1PS70SB40 single diode configuration symbol Fig 3 1PS70SB44 diode configuration symbol 3 MLC359 Fig 4 1PS70SB45 diode configuration symbol MLC360 Fig 5 1PS70SB46 diode configuration symbol Philips Semiconductors Product specification Schottky barrier double diodes 1PS70SB40 series LIMITING VALUES In accordance
8. or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1999 Apr 26 6 Philips Semiconductors Product specification Schottky barrier double diodes 1PS70SB40 series NOTES 1999 Apr 26 7 Philips Semiconductors Argentina see South America Australia 34 Waterloo Road NORTH RYDE NSW 2113 Tel 61 2 9805 4455 Fax 61 2 9805 4466 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 1 60 101 1248 Fax 43 1 60 101 1210 Belarus Hotel Minsk Business Center Bld 3 r 1211 Volodarski Str 6 220050 MINSK Tel 375 172 20 0733 Fax 375 172 20 0773 Belgium see The Netherlands Brazil see South America Bulgaria Philips Bulgaria Ltd Energoproject 15th floor 51 James Bourchier Blvd 1407 SOFIA Tel 359 2 68 9211 Fax 359 2 68 9102 Canada PHILIPS SEMICONDUCTORS COMPONENTS Tel 1 800 234 7381 Fax 1 800 943 0087 China Hong Kong 501 Hong Kong Industrial Technology Centre 72 Tat Chee Avenue Kowloon Tong HONG KONG Tel 852 2319 7888 Fax 852 2319 7700 Colombia see South America Czech Republic see Austria Denmark Sydhavnsgade 23 1780 COPENHAGEN V Tel 45 33 29 3333 Fax 45 33 29 3905 Finland Sinikalliontie 3 FIN 02630 ESPOO Tel 358 9 615 800 Fax 358 9 6158 0920 France 51 Rue Carnot BP317 92156 SURESNES Cedex Tel 33 1 4099 6161 Fax 33 1 409
9. with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS MIN AX UNIT continuous forward current repetitive peak forward current non repetitive peak forward current storage temperature junction temperature Tamb operating ambient temperature 65 150 C ELECTRICAL CHARACTERISTICS Tamb 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MAX UNIT Per diode VE continuous forward voltage see Fig 6 IF 1 mA 380 mV le 10 mA 500 mV IF 40 mA 1 V IR continuous reverse current VR 30V note 1 see Fig 7 1 LA Vr 40 V note 1 see Fig 7 charge carrier life time IF 5 mA Krakauer method diode capacitance Vpr 0 f 1 MHz see Fig 9 Note 1 Pulse test to 300 us 0 02 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient note 1 625 K W Note 1 Refer to SC70 standard mounting conditions 1999 Apr 26 3 Philips Semiconductors Product specification Schottky barrier double diodes 1PS70SB40 series GRAPHICAL DATA MLC362 102 MLC361 1 103 E
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PHILIPS 1PS70SB40 series handbook