PHILIPS 1PS181 handbook
Contents
1. 1996 Sep 03 62. 0 0 1PS1819 0 0 DISCRETE SEMICONDUCTORS DATA SHEET 1PS181 High speed double diode Product specification 1996 Sep 03 Supersedes data of April 1996 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification High speed double diode 1PS181 FEATURES DESCRIPTION PINNING e Small plastic SMD package The 1PS181 consists of two PIN DESCRIPTION Hahi high speed switching diodes with e High switching speed max 4 ns gn Sp g l a ane common anodes fabricated in planar l calhods IKI y a reversevo tage technology and encapsulated in the 2 cathode k2 Max small plastic SMD SC59 package 3 common anode e Repetitive peak reverse voltage max 85 V Repetitive peak forward current max 500 mA A APPLICATIONS 2 1 e High speed switching in e g surface mounted circuits Il 3 Top view MAMO82 Marking code A3T Fig 1 Simplified outline SC59 and symbol LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS Per diode repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded see Fig 2 note 1 double diode loaded see Fig 2 note 1 repetitive peak forward current non repetitive peak forward current square wave Tj 25 C prior to surge t 1 us t 1s total power dissipation Tamb 25 C note 1 storage temper
3. ature Tj junction temperature 150 C Note 1 Device mounted on an FRA printed circuit board 1996 Sep 03 2 Philips Semiconductors Product specification High speed double diode 1PS181 ELECTRICAL CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Per diode forward voltage see Fig 3 le 1mA IF 10mA IF 50mA le 100 mA reverse current see Fig 4 VR 25V Vpr 80 V Vr 25 V Tj 150 C Vpr 80 V Tj 150 C diode capacitance f 1 MHz Vp 0 see Fig 5 reverse recovery time when switched from lp 10 mA to IR 10 mA R 100 Q measured at IR 1 mA see Fig 6 Vir forward recovery voltage when switched from lp 10 mA 1 75 V tr 20 ns see Fig 7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j tp thermal resistance from junction to tie point 250 K W Rih ja thermal resistance from junction to ambient note 1 500 K W Note 1 Device mounted on an FRA printed circuit board 1996 Sep 03 3 Philips Semiconductors Product specification High speed double diode 1PS181 GRAPHICAL DATA MBD033 MBG382 300 300 IF Ir mA mA 3 200 200 single diode loaded double diode loaded 100 100 0 0 0 100 Famb C 200 0 Ve V 2 Device mounted
4. de 1PS181 PACKAGE OUTLINE Dimensions in mm Fig 8 SC59 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale
5. on an FR4 printed circuit board Fig 2 Maximum permissible continuous forward current as a function of ambient temperature 1 T 150 C typical values 2 Tj 25 C typical values 3 Tj 25 C maximum values Fig 3 Forward current as a function of forward voltage MBG380 0 100 T C 200 1 VR 80 V maximum values 2 Vpr 80 V typical values 3 Vr 25 V typical values Fig 4 Reverse current as a function of junction temperature MBH191 1 5 1 0 0 5 f 1 MHz Tj 25 C Fig 5 Diode capacitance as a function of reverse voltage typical values 1996 Sep 03 Philips Semiconductors Product specification High speed double diode 1PS181 Rg 50 Q SAMPLING l OSCILLOSCOPE V VptlexRg R 50 Q 90 1 MGA881 input signal output signal 1 IR 1 mA Fig 6 Reverse recovery voltage test circuit and waveforms 1kQ 450 Q l y 90 OSCILLOSCOPE Vir D U T R 50 Q 10 MGA882 LL i t t tr tp input output signal signal Fig 7 Forward recovery voltage test circuit and waveforms 1996 Sep 03 5 Philips Semiconductors Product specification High speed double dio
Download Pdf Manuals
Related Search
PHILIPS 1PS181 handbook